PECVD.APCVD,LPCVD

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Chemical Vapor Deposition Variants - 다우코닝
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1. Chemical Vapor Deposition Tutorial
2. Basics of CVD
3. CVD Variants
4. Various Uses of CVD Layers
5. Benefits of Various Composition Coatings
6. Precursors Already Commercialized
Chemical Vapor Deposition Variants - 다우Байду номын сангаас닝
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CVD (Chemical Vapor Deposition)
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CVD Variants
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APCVD (Atmospheric Pressure)
기술 자료
This is a relatively simple system that can operate with wafers on a horizontal conveyor belt. Deposition rate is fast and at low temperatures. The use of this method with ozone and TEOS is common in the industry, especially for shallow trench and pre-metal deposition layers.
ALD (Atomic Layer Deposition) Relatively new as a commercially available technique, ALD utilizes sequential precursor gas pulses to deposit a film one layer at a time. The first precursor gas is introduced into the process chamber and produces a monolayer of gas on the substrate. A second precursor gas is then introduced into the chamber and reacts with the monolayer produced from the first gas. Since each pair of gas pulses (which is one cycle) produces exactly one monolayer of the desired film, the thickness of the final film is precisely controlled by the number of deposition cycles.
PECVD (Plasma Enhanced)
In this process, radio frequency (RF) is used to induce plasma in the deposition gas. This results in a higher deposition rate at relatively low temperatures. Step coverage is good.
7. Drawbacks of Traditional Silicon Source Materials
8. More Benefits of Working with Dow Corning
LPCVD (Low Pressure)
This technique permits either horizontal or vertical loading of the wafers into the furnace and accommodates large numbers of wafers for processing. It gives good conformal-step coverage with excellent purity and uniformity (typically better than APCVD and PECVD). There is less dependence of the resulting layer on gas flow. However, the process requires higher temperatures and the deposition rate is low. Pressures required can be from 0.1 to 2 torr.