TSL251中文资料

D Monolithic Silicon IC Containing Photodiode, Operational Amplifier, and Feedback ComponentsD Converts Light Intensity to a Voltage DHigh Irradiance Responsivity, Typically − 64 mV/(m W/cm 2) at l p = 640 nm (TSL250RD)− 58 mV/(m W/cm 2) at l p = 940 nm (TSL260RD)D Single Voltage Supply OperationD Low Dark (Offset) Voltage ...10 mV Max D Low Supply Current ...1.1 mA TypicalD Wide Supply-Voltage Range ...2.7 V to 5.5 V DLow-Profile Surface-Mount Package:− Clear Plastic for TSL250RD and TSL251RD− Visible Light-Cutoff Filter Plastic for TSL260RD and TSL261RDDLead (Pb) Free and RoHS Compliant PackageDescriptionThe TSL250RD, TSL251RD, TSL260RD, and TSL261RD are light-to-voltage optical sensors, each combining a photodiode and a transimpedance amplifier on a single monolithic IC. The TSL250RD and TSL260RD have an equivalent feedback resistance of 16 M Ω and a photodiode measuring 1 square mm. The TSL251RD and TSL261RD have an equivalent feedback resistance of 8 M Ω and a photodiode measuring 0.5 square mm.8 NC 7 OUT 6 V DD 5 NCPACKAGE D 8-LEAD SOIC (TOP VIEW)NC 1NC 2NC 3GND 4TSL250RD, TSL251RD, TSL260RD, TSL261RD LIGHT-TO-VOLTAGE OPTICAL SENSORSAbsolute Maximum Ratings over operating free-air temperature range (unless otherwise noted)†Supply voltage, V DD (see Note 1) 6 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Output current, I O ±10 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Duration of short-circuit current at (or below) 25°C (see Note 2) 5 s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating free-air temperature range, T A −25°C to 85°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Storage temperature range, T stg −25°C to 85°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Solder conditions in accordance with JEDEC J −STD −020A, maximum temperature (see Note 3) 260°C. . . †Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.NOTES: 1.All voltages are with respect to GND.2.Output may be shorted to supply.3.The device may be hand soldered provided that heat is applied only to the solder pad and no contact is made between the tip ofthe solder iron and the device lead. The maximum time heat should be applied to the device is 5 seconds.Recommended Operating ConditionsMINNOMMAX UNIT Supply voltage, V DD2.7 5.5V Operating free-air temperature, T A70°CElectrical Characteristics at V DD = 5 V, T A = 25°C, R L = 10 k Ω (unless otherwise noted) (see Notes 3, 4, 5, and 6)Sλp = 640 nmλp = 940 nmTEST CONDITIONS TSL250RD TSL251RDTSL260RDTSL261RDPARAMETERMIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX UNITV D Dark voltage E e = 00510051005100510mV V OMMaximum output voltageV DD = 4.5 V 3 3.333.333.333.3V E e = 31 μW/cm 21.522.5Output E e = 124 μW/cm 2 1.522.5V OvoltageE e = 34 μW/cm 2123VE e = 132 μW/cm 2123R eIrradiance responsivitySee Note 764165815mV/(μW/cm 2)Temperature V O = 2 V @ 25°C, 0°C to 702288mV/°C coefficient ofoutput voltage (V O )T A = 0°C (see Note 8)0.10.10.40.4%/°C E e = 31 μW/cm 21.11.7Supply E e = 124 μW/cm 2 1.11.7I DDcurrentE e = 34 μW/cm 2 1.11.7mAE e = 132 μW/cm 21.11.7NOTES: 4.Measurements are made with R L = 10 k Ω between output and ground.5.Optical measurements are made using small-angle incident radiation from an LED optical source.6.The 640 nm input irradiance E e is supplied by an Al I nGaP LED with peak wavelength λp = 640 nm.7.The 940 nm input irradiance E e is supplied by a GaAs LED with peak wavelength λp = 940 nm.8.Irradiance responsivity is characterized over the range V O = V D to 3 V. The best-fit straight line of Output Voltage V O versus irradiance E e over this range will typically have a positive extrapolated V O value for E e = 0.9.The temperature coefficient of output voltage measurement is made by adjusting irradiance such that V O is approximately 2 V at25°C and then with irradiance held constant, measuring V O while varying the temperature between 0°C and 70°C.TSL250RD, TSL251RD, TSL260RD, TSL261RDLIGHT-TO-VOLTAGE OPTICAL SENSORSTAOS050K − OCTOBER 2007Dynamic Characteristics at V DD = 5 V , T A = 25°C, R L = 10 k Ω (unless otherwise noted) (see Figure 1)Sλp = 640 nmλp = 940 nmTEST TSL250RD TSL251RDTSL260RDTSL261RDPARAMETERCONDITIONSMINTYP MAXMINTYP MAXMINTYP MAXMINTYP MAXUNITt r Output pulse rise time V O(peak) = 2 V2607026070μs tf Output pulse fall time VO(peak) = 2 V 2607026070μsV nOutput noise voltageE e = 0, f = 1000 Hz0.80.70.80.7μV/(√(Hz))VOLTAGE WAVEFORMTEST CIRCUITOutput (see Note B)V OutputfNOTES: A.The input irradiance is supplied by a pulsed light-emitting diode with t r < 1 μs, t f < 1 μs.B.The output waveform is monitored on an oscilloscope with the following characteristics: t r < 100 ns, Z i ≥ 1 M Ω, C i ≤ 20 pF.Figure 1. Switching TimesTSL250RD, TSL251RD, TSL260RD, TSL261RD LIGHT-TO-VOLTAGE OPTICAL SENSORSTAOS050K − OCTOBER 2007TYPICAL CHARACTERISTICSOUTPUT VOLTAGEvsIRRADIANCEFigure 20.11101001000O u t p u t V o l t a g e (V O − V D ) — VE e — Irradiance — m W/cm 20.010.1110OUTPUT VOLTAGEvsIRRADIANCEFigure 30.11101001000E e — Irradiance — m W/cm 20.010.1110O u t p u t V o l t a g e (V O − V D ) —VFigure 430040050060070010008009001100λ − Wavelength − nmR e l a t i v e R e s p o n s i v i t y00.20.40.60.81.01.2PHOTODIODE SPECTRAL RESPONSIVITYFigure 5PHOTODIODE SPECTRAL RESPONSIVITYλ − Wavelength − nm7008009001000110060000.20.40.60.81R e l a t i v e R e s p o n s i v i t yTSL250RD, TSL251RD, TSL260RD, TSL261RDLIGHT-TO-VOLTAGE OPTICAL SENSORSTAOS050K − OCTOBER 2007TYPICAL CHARACTERISTICSFigure 6MAXIMUM OUTPUT VOLTAGEvsSUPPLY VOLTAGEV DD − Supply Voltage − V0123452.533.544.555.5V O M — Ma x i m u m O u t p u t V o l t a g e — VFigure 701234V O − Output Voltage − VSUPPLY CURRENTvsOUTPUT VOLTAGEI D D — S u p p l y C u r r e n t — m A0.40.60.811.21.4Figure 8NORMALIZED OUTPUT VOLTAGEvs.ANGULAR DISPLACEMENTQ − Angular Displacement − °V O — O ut p u t V o l t a g e — N o r m a l i z e d00.20.40.60.81−90−60−300306090TSL250RD, TSL251RD, TSL260RD, TSL261RD LIGHT-TO-VOLTAGE OPTICAL SENSORSTAOS050K − OCTOBER 2007APPLICATION INFORMATIONPower Supply ConsiderationsFor optimum device performance, power-supply lines should be decoupled by a 0.01-μF to 0.1-μF capacitor with short leads connected between VDD and GND mounted close to the device package.Device Operational DetailsThe voltage developed at the output pin (OUT) is given by:V O = V D + (R e ) (E e )where:V O is the output voltageV D is the output voltage for dark condition (E e = 0)R e is the device responsivity for a given wavelength of light given in mV/(μW/cm 2)E eis the incident irradiance in μW/cm 2V D is a fixed offset voltage resulting primarily from the input offset voltage of the internal op amp. As shown in the equation above, this voltage represents a constant, light-independent term in the total output voltage V O .At low light levels, this offset voltage can be a significant percentage of V O . For optimum performance of any given device over the full output range, the value of V D should be measured (in the absence of light) and later subtracted from all subsequent light measurements (see Figures 2 and 3).PCB Pad LayoutSuggested PCB pad layout guidelines for the D package is shown in Figure 9.NOTES: A.All linear dimensions are in millimeters.B.This drawing is subject to change without notice.Figure 9. Suggested D Package PCB LayoutTSL250RD, TSL251RD, TSL260RD, TSL261RDLIGHT-TO-VOLTAGE OPTICAL SENSORSTAOS050K − OCTOBER 2007MECHANICAL DATAThis SOIC package consists of an integrated circuit mounted on a lead frame and encapsulated with an electrically nonconductive clear plastic compound. The photodiode area is typically 1.02 mm 2 for the TSL250RD and TSL260RD,and is typically 0.514 mm 2 for the TSL251RD and TSL261RD.PACKAGE DPLASTIC SMALL-OUTLINENOTES: A.All linear dimensions are in millimeters.B.The center of the photo-active area is referenced to the upper left corner tip of the lead frame (Pin 1).C.Package is molded with an electrically nonconductive clear plastic compound having an index of refraction of 1.55.D.This drawing is subject to change without notice.Figure 10. Package D — Plastic Small Outline IC Packaging ConfigurationTSL250RD, TSL251RD, TSL260RD, TSL261RD LIGHT-TO-VOLTAGE OPTICAL SENSORSTAOS050K − OCTOBER 2007MECHANICAL DATASIDE VIEWDETAIL B6.45 + 0.10[0.254 + 0.004]5.13 + 0.10[0.202 + 0.004]DETAIL A NOTES: A.All linear dimensions are in millimeters [inches].B.The dimensions on this drawing are for illustrative purposes only. Dimensions of an actual carrier may vary slightly.C.Symbols on drawing A o , B o , and K o are defined in ANSI EIA Standard 481−B 2001.D.Each reel is 178 millimeters in diameter and contains 1000 parts.E.TAOS packaging tape and reel conform to the requirements of EIA Standard 481−B.F.This drawing is subject to change without notice.Figure 11. Package D Carrier TapeTSL250RD, TSL251RD, TSL260RD, TSL261RDLIGHT-TO-VOLTAGE OPTICAL SENSORSTAOS050K − OCTOBER 2007MANUFACTURING INFORMATIONThe Plastic Small Outline IC package (D) has been tested and has demonstrated an ability to be reflow soldered to a PCB substrate.The solder reflow profile describes the expected maximum heat exposure of components during the solder reflow process of product on a PCB. Temperature is measured on top of component. The component should be limited to a maximum of three passes through this solder reflow profile.Table 1. TSL2xxRD Solder Reflow ProfilePARAMETERREFERENCETSL2xxRD Average temperature gradient in preheating 2.5°C/sec Soak time t soak 2 to 3 minutes Time above 217°C t 1Max 60 sec Time above 230°C t 2Max 50 sec Time above T peak −10°C t 3Max 10 sec Peak temperature in reflow T peak 260° C (−0°C/+5°C)Temperature gradient in coolingMax −5°C/secT Figure 12. TSL2xxRD Solder Reflow Profile GraphTSL250RD, TSL251RD, TSL260RD, TSL261RD LIGHT-TO-VOLTAGE OPTICAL SENSORSTAOS050K − OCTOBER 2007Moisture SensitivityOptical characteristics of the device can be adversely affected during the soldering process by the release and vaporization of moisture that has been previously absorbed into the package molding compound. To prevent these adverse conditions, all devices shipped in carrier tape have been pre-baked and shipped in a sealed moisture-barrier bag. No further action is necessary if these devices are processed through solder reflow within 24 hours of the seal being broken on the moisture-barrier bag.However, for all devices shipped in tubes or if the seal on the moisture barrier bag has been broken for 24 hours or longer, it is recommended that the following procedures be used to ensure the package molding compound contains the smallest amount of absorbed moisture possible.For devices shipped in tubes:1.Remove devices from tubes2.Bake devices for 4 hours, at 90°C3.After cooling, load devices back into tubes4.Perform solder reflow within 24 hours after bakeBake only a quantity of devices that can be processed through solder reflow in 24 hours. Devices can be re-baked for 4 hours, at 90°C for a cumulative total of 12 hours (3 bakes for 4 hours at 90°C).For devices shipped in carrier tape:1.Bake devices for 4 hours, at 90°C in the tape2.Perform solder reflow within 24 hours after bakeBake only a quantity of devices that can be processed through solder reflow in 24 hours. Devices can be re −baked for 4 hours in tape, at 90°C for a cumulative total of 12 hours (3 bakes for 4 hours at 90°C).TSL250RD, TSL251RD, TSL260RD, TSL261RD LIGHT-TO-VOLTAGE OPTICAL SENSORSTAOS050K − OCTOBER 2007PRODUCTION DATA — information in this document is current at publication date. Products conform to specifications in accordance with the terms of Texas Advanced Optoelectronic Solutions, Inc. standard warranty. Production processing does not necessarily include testing of all parameters.LEAD-FREE (Pb-FREE) and GREEN STATEMENTPb-Free (RoHS) TAOS’ terms Lead-Free or Pb-Free mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TAOS Pb-Free products are suitable for use in specified lead-free processes.Green (RoHS & no Sb/Br) TAOS defines Green to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material).Important Information and Disclaimer The information provided in this statement represents TAOS’ knowledge and belief as of the date that it is provided. TAOS bases its knowledge and belief on information provided by third parties,and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TAOS has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. TAOS and TAOS suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.NOTICETexas Advanced Optoelectronic Solutions, Inc. (TAOS) reserves the right to make changes to the products contained in this document to improve performance or for any other purpose, or to discontinue them without notice. Customers are advised to contact TAOS to obtain the latest product information before placing orders or designing TAOS products into systems.TAOS assumes no responsibility for the use of any products or circuits described in this document or customer product design, conveys no license, either expressed or implied, under any patent or other right, and makes no representation that the circuits are free of patent infringement. TAOS further makes no claim as to the suitability of its products for any particular purpose, nor does TAOS assume any liability arising out of the use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages.TEXAS ADVANCED OPTOELECTRONIC SOLUTIONS, INC. PRODUCTS ARE NOT DESIGNED OR INTENDED FOR USE IN CRITICAL APPLICATIONS IN WHICH THE FAILURE OR MALFUNCTION OF THE TAOS PRODUCT MAY RESULT IN PERSONAL INJURY OR DEATH. USE OF TAOS PRODUCTS IN LIFE SUPPORT SYSTEMS IS EXPRESSLY UNAUTHORIZED AND ANY SUCH USE BY A CUSTOMER IS COMPLETELY AT THE CUSTOMER’S RISK.LUMENOLOGY, TAOS, the TAOS logo, and Texas Advanced Optoelectronic Solutions are registered trademarks of Texas Advanced Optoelectronic Solutions Incorporated.TSL250RD, TSL251RD, TSL260RD, TSL261RD LIGHT-TO-VOLTAGE OPTICAL SENSORSTAOS050K − OCTOBER 2007。

D Monolithic Silicon IC Containing Photodiode, Operational Amplifier, and Feedback ComponentsD Converts Light Intensity to a Voltage D High Irradiance Responsivity, Typically 137 mV/(m W/cm 2) at l p = 635 nm (TSL250R)D Compact 3-Lead Clear Plastic Package D Single Voltage Supply OperationD Low Dark (Offset) Voltage....10 mV Max D Low Supply Current......1.1 mA TypicalD Wide Supply-Voltage Range.... 2.7 V to 5.5 V D Replacements for TSL250, TSL251, and TSL252DRoHS Compliant (−LF Package Only)DescriptionThe TSL250R, TSL251R, and TSL252R are light-to-voltage optical sensors, each combining a photodiode and a transimpedance amplifier (feedback resistor = 16 M Ω, 8 M Ω, and 2.8 M Ω respectively) on a single monolithic IC. Output voltage is directly proportional to the light intensity (irradiance) on the photodiode. These devices have improved amplifier offset-voltage stability and low power consumption and are supplied in a 3-lead clear plastic sidelooker package with an integral lens. When supplied in the lead (Pb) free package, the device is RoHS compliant.Functional Block DiagramPACKAGE S SIDELOOKER (FRONT VIEW)1GND2V DD3OUTPACKAGE SM SURFACE MOUNT SIDELOOKER (FRONT VIEW)1GND2V DD3OUTTSL250R, TSL251R, TSL252RLIGHT-TO-VOLTAGE OPTICAL SENSORSTerminal FunctionsTERMINAL NAME NO.DESCRIPTIONGND 1Ground (substrate). All voltages are referenced to GND.OUT 3Output voltage V DD2Supply voltageAbsolute Maximum Ratings over operating free-air temperature range (unless otherwise noted)†Supply voltage, V DD (see Note 1) 6 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Output current, I O ±10 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Duration of short-circuit current at (or below) 25°C (see Note 2) 5 s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating free-air temperature range, T A −25°C to 85°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Storage temperature range, T stg −25°C to 85°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds (S Package) 260°C . . . . . . . . . . . . . . . . . . . . Reflow solder, in accordance with J-STD-020C or J-STD-020D (SM Package) 260°C. . . . . . . . . . . . . . . . . . . †Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.NOTES: 1.All voltages are with respect to GND.2.Output may be shorted to supply.Recommended Operating ConditionsMINNOMMAX UNIT Supply voltage, V DD2.7 5.5V Operating free-air temperature, T A70°CTSL250R, TSL251R, TSL252RLIGHT-TO-VOLTAGE OPTICAL SENSORSTAOS028H − SEPTEMBER 2007Electrical Characteristics at V DD = 5 V , T A = 25°C, λp = 635 nm, R L = 10 k Ω (unless otherwise noted)(see Notes 3, 4, and 5)TEST TSL250R TSL251RTSL252RPARAMETER CONDITIONS MIN TYP MAX MIN TYP MAX MIN TYP MAX UNIT V D Dark voltage E e = 0041004100410mV V OMMaximum output voltage V DD = 4.5 V 3.0 3.3 3.03.33.03.3VE e = 14.6 μW/cm 21.522.5E e = 38.5 μW/cm 2 1.522.5V OOutput voltageE e = 196 μW/cm 2 1.522.5VE 2 1.6mV/°C Temperature e = 14.6 μW/cm ,T A = 0°C to 70°C 0.08%/°C E 2 1.6mV/°C αvocoefficient of output voltage )e = 38.5 μW/cm ,T A = 0°C to 70°C 0.08%/°C p g (V O E 2 1.6mV/°C e = 196 μW/cm ,T A = 0°C to 70°C 0.08%/°C Irradiance λp = 635 nm,See Notes 5 and 71375210.2N eresponsivityλp = 880 nm,See Notes 6 and 7127489.4mV/(μW/cm 2)E e = 14.6 μW/cm 21.11.7I Supply current E e = 38.5 μW/cm 2 1.11.7mADDpp yE e = 196 μW/cm 21.11.7NOTES: 3.Measurements are made with R L = 10 k Ω between output and ground.4.Optical measurements are made using small-angle incident radiation from an LED optical source.5.The input irradiance E e is supplied by an Al I nGaP LED with peak wavelength λp = 635 nm6.The input irradiance E e is supplied by a GaAlAs LED with peak wavelength λp = 880 nm7.Irradiance responsivity is characterized over the range V O = 0.05 to 2.9 V. The best-fit straight line of Output Voltage V O versus irradiance E e over this range will typically have a positive extrapolated V O value for E e = 0.Dynamic Characteristics at T A = 25°C (see Figure 1)TSL250R TSL251R TSL252R PARAMETERTEST CONDITIONS MINTYP MAXMINTYP MAXMINTYP MAXUNIT t r Output pulse rise time V DD = 5 V,λp = 635 nm 260707μs t f Output pulse fall time V DD = 5 V,λp = 635 nm 260707μs V nOutput noise voltageV DD = 5 V,f = 1000 HzE e = 0,0.80.70.6μV/√TSL250R, TSL251R, TSL252RLIGHT-TO-VOLTAGE OPTICAL SENSORSTAOS028H − SEPTEMBER 2007PARAMETER MEASUREMENT INFORMATIONVOLTAGE WAVEFORMTEST CIRCUITOutput (see Note B)OutputfNOTES: A.The input irradiance is supplied by a pulsed Al I nGaP light-emitting diode with the following characteristics: λp = 635 nm,t r < 1 μs, t f < 1 μs.B.The output waveform is monitored on an oscilloscope with the following characteristics: t r < 100 ns, Z i ≥ 1 M Ω, C i ≤20 pF.Figure 1. Switching Times0.4N o r m a l i z e d O u t p u t V o l t a g e 10.80.60.2θ − Angular Displacement80°60°40°20°0°80°60°40°20°NORMALIZED OUTPUT VOLTAGEvsANGULAR DISPLACEMENTV −OFigure 2TSL250R, TSL251R, TSL252RLIGHT-TO-VOLTAGE OPTICAL SENSORSTAOS028H − SEPTEMBER 2007TYPICAL CHARACTERISTICS0.010.1110100− O u t pu t V o l t a g e − VOUTPUT VOLTAGEvsIRRADIANCE0.1110O V E e − Irradiance − μW/cm 2Figure 3Figure 430040050060070010008009001100λ − Wavelength − nmR e l a t i v e R e s p o n s i v i t y00.20.40.60.81.01.2PHOTODIODE SPECTRAL RESPONSIVITYFigure 542105MAXIMUM OUTPUT VOLTAGEvsSUPPLY VOLTAGE− M a x i m u m O u t p u t V o l t a g e − VV O M 3V DD − Supply Voltage − VFigure 610.601231.641.41.20.8V O − Output Voltage − V− S u p p l y C u r r e n t − m AI D D SUPPLY CURRENTvsOUTPUT VOLTAGETSL250R, TSL251R, TSL252RLIGHT-TO-VOLTAGE OPTICAL SENSORSTAOS028H − SEPTEMBER 2007APPLICATION INFORMATIONPCB Pad LayoutSuggested PCB pad layout guidelines for the SM surface mount package are shown in Figure 7.NOTES: A.All linear dimensions are in millimeters.B.This drawing is subject to change without notice.Figure 7. Suggested SM Package PCB LayoutTSL250R, TSL251R, TSL252RLIGHT-TO-VOLTAGE OPTICAL SENSORSTAOS028H − SEPTEMBER 2007MECHANICAL INFORMATIONThe devices are supplied in a clear plastic three-lead package (S). The integrated photodiode active area istypically 1,0 mm 2 (0.0016 in 2) for TSL250R, 0,5 mm 2 (0.00078 in 2) for the TSL251R, and 0,26 mm 2 (0.0004 in 2)for the TSL252R.PACKAGE S PLASTIC SINGLE-IN-LINE SIDE-LOOKER PACKAGE0.422TOP VIEWSIDE VIEWFRONT VIEWLead Free AvailablePbNOTES: A.All linear dimensions are in millimeters; tolerance is ± 0.25 mm unless otherwise stated.B.Dimension is to center of lens arc, which is located below the package face.C.The integrated photodiode active area is typically located in the center of the lens and 0.97 mm below the top of the lens surface.D.Index of refraction of clear plastic is 1.55.E.Lead finish for TSL25xR: solder dipped, 63% Sn/37% Pb. Lead finish for TSL25xR −LF: solder dipped, 100% Sn.F.This drawing is subject to change without notice.Figure 8. Package ConfigurationTSL250R, TSL251R, TSL252RLIGHT-TO-VOLTAGE OPTICAL SENSORSTAOS028H − SEPTEMBER 2007MECHANICAL DATAPACKAGE SM PLASTIC SURFACE MOUNT SIDE-LOOKER PACKAGETOP VIEWSIDE VIEWFRONT VIEWNOTES: A.All linear dimensions are in millimeters; tolerance is ± 0.25 mm unless otherwise stated.B.Dimension is to center of lens arc, which is located below the package face.C.The integrated photodiode active area is typically located in the center of the lens and 0.97 mm below the top of the lens surface.D.Index of refraction of clear plastic is 1.55.E.Lead finish for TSL25xRSM −LF: solder dipped, 100% Sn.F.This drawing is subject to change without notice.Figure 9. Package SM — Surface Mount Side-Looker Package ConfigurationTSL250R, TSL251R, TSL252RLIGHT-TO-VOLTAGE OPTICAL SENSORSTAOS028H − SEPTEMBER 2007PRODUCTION DATA — information in this document is current at publication date. Products conform to specifications in accordance with the terms of Texas Advanced Optoelectronic Solutions, Inc. standard warranty. Production processing does not necessarily include testing of all parameters.LEAD-FREE (Pb-FREE) and GREEN STATEMENTPb-Free (RoHS) TAOS’ terms Lead-Free or Pb-Free mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TAOS Pb-Free products are suitable for use in specified lead-free processes.Green (RoHS & no Sb/Br) TAOS defines Green to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material).Important Information and Disclaimer The information provided in this statement represents TAOS’ knowledge and belief as of the date that it is provided. TAOS bases its knowledge and belief on information provided by third parties,and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TAOS has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. TAOS and TAOS suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.NOTICETexas Advanced Optoelectronic Solutions, Inc. (TAOS) reserves the right to make changes to the products contained in this document to improve performance or for any other purpose, or to discontinue them without notice. Customers are advised to contact TAOS to obtain the latest product information before placing orders or designing TAOS products into systems.TAOS assumes no responsibility for the use of any products or circuits described in this document or customer product design, conveys no license, either expressed or implied, under any patent or other right, and makes no representation that the circuits are free of patent infringement. TAOS further makes no claim as to the suitability of its products for any particular purpose, nor does TAOS assume any liability arising out of the use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages.TEXAS ADVANCED OPTOELECTRONIC SOLUTIONS, INC. PRODUCTS ARE NOT DESIGNED OR INTENDED FOR USE IN CRITICAL APPLICATIONS IN WHICH THE FAILURE OR MALFUNCTION OF THE TAOS PRODUCT MAY RESULT IN PERSONAL INJURY OR DEATH. USE OF TAOS PRODUCTS IN LIFE SUPPORT SYSTEMS IS EXPRESSLY UNAUTHORIZED AND ANY SUCH USE BY A CUSTOMER IS COMPLETELY AT THE CUSTOMER’S RISK.LUMENOLOGY, TAOS, the TAOS logo, and Texas Advanced Optoelectronic Solutions are registered trademarks of Texas Advanced Optoelectronic Solutions Incorporated.TSL250R, TSL251R, TSL252RLIGHT-TO-VOLTAGE OPTICAL SENSORS TAOS028H − SEPTEMBER 2007。

D Monolithic Silicon IC Containing Photodiode, Operational Amplifier, and Feedback ComponentsD Converts Light Intensity to a Voltage D High Irradiance Responsivity, Typically 137 mV/(m W/cm 2) at l p = 635 nm (TSL250R)D Compact 3-Lead Clear Plastic Package D Single Voltage Supply OperationD Low Dark (Offset) Voltage....10 mV Max D Low Supply Current......1.1 mA TypicalD Wide Supply-Voltage Range.... 2.7 V to 5.5 V D Replacements for TSL250, TSL251, and TSL252DRoHS Compliant (−LF Package Only)DescriptionThe TSL250R, TSL251R, and TSL252R are light-to-voltage optical sensors, each combining a photodiode and a transimpedance amplifier (feedback resistor = 16 M Ω, 8 M Ω, and 2.8 M Ω respectively) on a single monolithic IC. Output voltage is directly proportional to the light intensity (irradiance) on the photodiode. These devices have improved amplifier offset-voltage stability and low power consumption and are supplied in a 3-lead clear plastic sidelooker package with an integral lens. When supplied in the lead (Pb) free package, the device is RoHS compliant.Functional Block DiagramPACKAGE S SIDELOOKER (FRONT VIEW)1GND2V DD3OUTPACKAGE SM SURFACE MOUNT SIDELOOKER (FRONT VIEW)1GND2V DD3OUTTSL250R, TSL251R, TSL252RLIGHT-TO-VOLTAGE OPTICAL SENSORSTerminal FunctionsTERMINAL NAME NO.DESCRIPTIONGND 1Ground (substrate). All voltages are referenced to GND.OUT 3Output voltage V DD2Supply voltageAbsolute Maximum Ratings over operating free-air temperature range (unless otherwise noted)†Supply voltage, V DD (see Note 1) 6 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Output current, I O ±10 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Duration of short-circuit current at (or below) 25°C (see Note 2) 5 s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating free-air temperature range, T A −25°C to 85°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Storage temperature range, T stg −25°C to 85°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds (S Package) 260°C . . . . . . . . . . . . . . . . . . . . Reflow solder, in accordance with J-STD-020C or J-STD-020D (SM Package) 260°C. . . . . . . . . . . . . . . . . . . †Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.NOTES: 1.All voltages are with respect to GND.2.Output may be shorted to supply.Recommended Operating ConditionsMINNOMMAX UNIT Supply voltage, V DD2.7 5.5V Operating free-air temperature, T A70°CTSL250R, TSL251R, TSL252RLIGHT-TO-VOLTAGE OPTICAL SENSORSTAOS028H − SEPTEMBER 2007Electrical Characteristics at V DD = 5 V , T A = 25°C, λp = 635 nm, R L = 10 k Ω (unless otherwise noted)(see Notes 3, 4, and 5)TEST TSL250R TSL251RTSL252RPARAMETER CONDITIONS MIN TYP MAX MIN TYP MAX MIN TYP MAX UNIT V D Dark voltage E e = 0041004100410mV V OMMaximum output voltage V DD = 4.5 V 3.0 3.3 3.03.33.03.3VE e = 14.6 μW/cm 21.522.5E e = 38.5 μW/cm 2 1.522.5V OOutput voltageE e = 196 μW/cm 2 1.522.5VE 2 1.6mV/°C Temperature e = 14.6 μW/cm ,T A = 0°C to 70°C 0.08%/°C E 2 1.6mV/°C αvocoefficient of output voltage )e = 38.5 μW/cm ,T A = 0°C to 70°C 0.08%/°C p g (V O E 2 1.6mV/°C e = 196 μW/cm ,T A = 0°C to 70°C 0.08%/°C Irradiance λp = 635 nm,See Notes 5 and 71375210.2N eresponsivityλp = 880 nm,See Notes 6 and 7127489.4mV/(μW/cm 2)E e = 14.6 μW/cm 21.11.7I Supply current E e = 38.5 μW/cm 2 1.11.7mADDpp yE e = 196 μW/cm 21.11.7NOTES: 3.Measurements are made with R L = 10 k Ω between output and ground.4.Optical measurements are made using small-angle incident radiation from an LED optical source.5.The input irradiance E e is supplied by an Al I nGaP LED with peak wavelength λp = 635 nm6.The input irradiance E e is supplied by a GaAlAs LED with peak wavelength λp = 880 nm7.Irradiance responsivity is characterized over the range V O = 0.05 to 2.9 V. The best-fit straight line of Output Voltage V O versus irradiance E e over this range will typically have a positive extrapolated V O value for E e = 0.Dynamic Characteristics at T A = 25°C (see Figure 1)TSL250R TSL251R TSL252R PARAMETERTEST CONDITIONS MINTYP MAXMINTYP MAXMINTYP MAXUNIT t r Output pulse rise time V DD = 5 V,λp = 635 nm 260707μs t f Output pulse fall time V DD = 5 V,λp = 635 nm 260707μs V nOutput noise voltageV DD = 5 V,f = 1000 HzE e = 0,0.80.70.6μV/√TSL250R, TSL251R, TSL252RLIGHT-TO-VOLTAGE OPTICAL SENSORSTAOS028H − SEPTEMBER 2007PARAMETER MEASUREMENT INFORMATIONVOLTAGE WAVEFORMTEST CIRCUITOutput (see Note B)OutputfNOTES: A.The input irradiance is supplied by a pulsed Al I nGaP light-emitting diode with the following characteristics: λp = 635 nm,t r < 1 μs, t f < 1 μs.B.The output waveform is monitored on an oscilloscope with the following characteristics: t r < 100 ns, Z i ≥ 1 M Ω, C i ≤20 pF.Figure 1. Switching Times0.4N o r m a l i z e d O u t p u t V o l t a g e 10.80.60.2θ − Angular Displacement80°60°40°20°0°80°60°40°20°NORMALIZED OUTPUT VOLTAGEvsANGULAR DISPLACEMENTV −OFigure 2TSL250R, TSL251R, TSL252RLIGHT-TO-VOLTAGE OPTICAL SENSORSTAOS028H − SEPTEMBER 2007TYPICAL CHARACTERISTICS0.010.1110100− O u t pu t V o l t a g e − VOUTPUT VOLTAGEvsIRRADIANCE0.1110O V E e − Irradiance − μW/cm 2Figure 3Figure 430040050060070010008009001100λ − Wavelength − nmR e l a t i v e R e s p o n s i v i t y00.20.40.60.81.01.2PHOTODIODE SPECTRAL RESPONSIVITYFigure 542105MAXIMUM OUTPUT VOLTAGEvsSUPPLY VOLTAGE− M a x i m u m O u t p u t V o l t a g e − VV O M 3V DD − Supply Voltage − VFigure 610.601231.641.41.20.8V O − Output Voltage − V− S u p p l y C u r r e n t − m AI D D SUPPLY CURRENTvsOUTPUT VOLTAGETSL250R, TSL251R, TSL252RLIGHT-TO-VOLTAGE OPTICAL SENSORSTAOS028H − SEPTEMBER 2007APPLICATION INFORMATIONPCB Pad LayoutSuggested PCB pad layout guidelines for the SM surface mount package are shown in Figure 7.NOTES: A.All linear dimensions are in millimeters.B.This drawing is subject to change without notice.Figure 7. Suggested SM Package PCB LayoutTSL250R, TSL251R, TSL252RLIGHT-TO-VOLTAGE OPTICAL SENSORSTAOS028H − SEPTEMBER 2007MECHANICAL INFORMATIONThe devices are supplied in a clear plastic three-lead package (S). The integrated photodiode active area istypically 1,0 mm 2 (0.0016 in 2) for TSL250R, 0,5 mm 2 (0.00078 in 2) for the TSL251R, and 0,26 mm 2 (0.0004 in 2)for the TSL252R.PACKAGE S PLASTIC SINGLE-IN-LINE SIDE-LOOKER PACKAGE0.422TOP VIEWSIDE VIEWFRONT VIEWLead Free AvailablePbNOTES: A.All linear dimensions are in millimeters; tolerance is ± 0.25 mm unless otherwise stated.B.Dimension is to center of lens arc, which is located below the package face.C.The integrated photodiode active area is typically located in the center of the lens and 0.97 mm below the top of the lens surface.D.Index of refraction of clear plastic is 1.55.E.Lead finish for TSL25xR: solder dipped, 63% Sn/37% Pb. Lead finish for TSL25xR −LF: solder dipped, 100% Sn.F.This drawing is subject to change without notice.Figure 8. Package ConfigurationTSL250R, TSL251R, TSL252RLIGHT-TO-VOLTAGE OPTICAL SENSORSTAOS028H − SEPTEMBER 2007MECHANICAL DATAPACKAGE SM PLASTIC SURFACE MOUNT SIDE-LOOKER PACKAGETOP VIEWSIDE VIEWFRONT VIEWNOTES: A.All linear dimensions are in millimeters; tolerance is ± 0.25 mm unless otherwise stated.B.Dimension is to center of lens arc, which is located below the package face.C.The integrated photodiode active area is typically located in the center of the lens and 0.97 mm below the top of the lens surface.D.Index of refraction of clear plastic is 1.55.E.Lead finish for TSL25xRSM −LF: solder dipped, 100% Sn.F.This drawing is subject to change without notice.Figure 9. Package SM — Surface Mount Side-Looker Package ConfigurationTSL250R, TSL251R, TSL252RLIGHT-TO-VOLTAGE OPTICAL SENSORSTAOS028H − SEPTEMBER 2007PRODUCTION DATA — information in this document is current at publication date. Products conform to specifications in accordance with the terms of Texas Advanced Optoelectronic Solutions, Inc. standard warranty. Production processing does not necessarily include testing of all parameters.LEAD-FREE (Pb-FREE) and GREEN STATEMENTPb-Free (RoHS) TAOS’ terms Lead-Free or Pb-Free mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TAOS Pb-Free products are suitable for use in specified lead-free processes.Green (RoHS & no Sb/Br) TAOS defines Green to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material).Important Information and Disclaimer The information provided in this statement represents TAOS’ knowledge and belief as of the date that it is provided. TAOS bases its knowledge and belief on information provided by third parties,and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TAOS has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. TAOS and TAOS suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.NOTICETexas Advanced Optoelectronic Solutions, Inc. (TAOS) reserves the right to make changes to the products contained in this document to improve performance or for any other purpose, or to discontinue them without notice. Customers are advised to contact TAOS to obtain the latest product information before placing orders or designing TAOS products into systems.TAOS assumes no responsibility for the use of any products or circuits described in this document or customer product design, conveys no license, either expressed or implied, under any patent or other right, and makes no representation that the circuits are free of patent infringement. TAOS further makes no claim as to the suitability of its products for any particular purpose, nor does TAOS assume any liability arising out of the use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages.TEXAS ADVANCED OPTOELECTRONIC SOLUTIONS, INC. PRODUCTS ARE NOT DESIGNED OR INTENDED FOR USE IN CRITICAL APPLICATIONS IN WHICH THE FAILURE OR MALFUNCTION OF THE TAOS PRODUCT MAY RESULT IN PERSONAL INJURY OR DEATH. USE OF TAOS PRODUCTS IN LIFE SUPPORT SYSTEMS IS EXPRESSLY UNAUTHORIZED AND ANY SUCH USE BY A CUSTOMER IS COMPLETELY AT THE CUSTOMER’S RISK.LUMENOLOGY, TAOS, the TAOS logo, and Texas Advanced Optoelectronic Solutions are registered trademarks of Texas Advanced Optoelectronic Solutions Incorporated.TSL250R, TSL251R, TSL252RLIGHT-TO-VOLTAGE OPTICAL SENSORS TAOS028H − SEPTEMBER 2007。

TSL2561是光-数字转换器，它将光强转换成数字信号输出，具有直接I2C接口或者SMBus接口。

每个设备都连接一个带宽的光敏二极管和在单独CMOS集成电路上的一个红外响应的光敏二极管，这个集成电路具有提供20bit动态范围的近-适光响应的能力。

两个集成的ADCs将光敏电流转换成一个数字输出，这个数字输出表示测量每一个通道的发光。

这个数字输出可以是一个微处理器的输入。

在这个微处理器里亮度（周围光的水平）使用试验化公式来得到。

TSL2560设备允许SNBTSL256x是TAOS公司推出的一种高速、低功耗、宽量程、可编程灵活配置的光强传感器芯片。

本文简要介绍了TSL256x的基本特点、引脚功能、内部结构和工作原理，给出了TSL2561的实用电路、软件设计流程连同核心程式。

关键词光强传感器 TSL256x I2C总线积分式A/D转换器1TSL256x简介TSL2560和TSL2561是TAOS公司推出的一种高速、低功耗、宽量程、可编程灵活配置的光强度数字转换芯片。

该芯片可广泛应用于各类显示屏的监控，目的是在多变的光照条件下，使得显示屏提供最好的显示亮度并尽可能降低电源功耗；还能够用于街道光照控制、安全照明等众多场合。

该芯片的主要特点如下：◇可编程配置许可的光强度上下阈值，当实际光照度超过该阈值时给出中断信号；◇数字输出符合标准的SMBus(TSL2560)和I2C(TSL2561)总线协议；◇模拟增益和数字输出时间可编程控制；◇1.25 mm×1.75 mm超小封装，在低功耗模式下，功耗仅为0.75 mW；◇自动抑制50 Hz/60 Hz的光照波动。

2TSL256x的引脚功能TSL256x有2种封装形式： 6LEAD CHIPSCALE和6LEAD TMB。

封装形式不同，相应的光照度计算公式也不同。

图1为这两种封装形式的引脚分布图。

图1TSL256x封装各引脚的功能如下：脚1和脚3：分别是电源引脚和信号地。

D Converts Light Intensity to Output Voltage D Monolithic Silicon IC Containing Photodiode, Operational Amplifier, and Feedback Components D High SensitivityD Single Voltage Supply Operation (2.7 V to 5.5 V)D Low Noise (200 μVrms Typ to 1 kHz)D Rail-to-Rail OutputD High Power-Supply Rejection (35 dB at 1 kHz)D Compact 3-Leaded Plastic Package DRoHS Compliant (−LF Package Only)DescriptionThe TSL257 is a high-sensitivity low-noise light-to-voltage optical converter that combines a photodiode and a transimpedance amplifier on a single monolithic CMOS integrated circuit. Output voltage is directly proportional to light intensity (irradiance) on the photodiode. The TSL257 has a transimpedance gain of 320 M Ω.The device has improved offset voltage stability and low power consumption and is supplied in a 3-lead clear plastic sidelooker package with an integral lens. When supplied in the lead (Pb) free package, the device is RoHS compliant.Functional Block DiagramPACKAGE S SIDELOOKER (FRONT VIEW)1GND2V DD3OUTPACKAGE SM SURFACE MOUNT SIDELOOKER (FRONT VIEW)1GND2V DD3OUTTSL257HIGH-SENSITIVITYLIGHT-TO-VOLTAGE CONVERTERAbsolute Maximum Ratings over operating free-air temperature range (unless otherwise noted)†Supply voltage, V DD (see Note 1) 6 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Output current, I O ±10 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Duration of short-circuit current at (or below) 25°C 5 s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating free-air temperature range, T A −25°C to 85°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Storage temperature range, T stg −25°C to 85°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds (S Package) 260°C . . . . . . . . . . . . . . . . . . . . Reflow solder, in accordance with J-STD-020C or J-STD-020D (SM Package) 260°C. . . . . . . . . . . . . . . . . . . †Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.NOTE 1:All voltages are with respect to GND.Recommended Operating ConditionsMINMAX UNIT Supply voltage, V DD2.7 5.5V Operating free-air temperature, T A70°CElectrical Characteristics at V DD = 5 V , T A = 25°C, λp = 470 nm, R L = 10 k Ω (unless otherwise noted)(see Notes 2 and 3)PARAMETERTEST CONDITIONSMIN TYPMAX UNIT V D Dark voltageE e = 0015mV V DD = 4.5 V,No Load 4.49V OM Maximum output voltage swing V DD = 4.5 V,R L = 10 k Ω4 4.2V V O Output voltageE e = 1.54 μW/cm 2, λp = 470 nm, Note 51.62 2.4V αVDTemperature coefficient of dark voltage (V D )T A = 0°C to 70°C−15μV/°Cλp = 428 nm, see Notes 4 and 81.18λp = 470 nm, see Notes 5 and 8 1.30N eIrradiance responsivityλp = 565 nm, see Notes 6 and 8 1.58V/(μW/cm 2)λp = 645 nm, see Notes 7 and 81.68PSRR Power supply rejection ratio f ac = 100 Hz, see Note 955dB pp y j f ac = 1 kHz, see Note 935dB I DDSupply currentE e = 1.54 μW/cm 2, λp = 470 nm, Note 51.93.5mA NOTES: 2.Measured with R L = 10 k Ω between output and ground.3.Optical measurements are made using small-angle incident radiation from a light-emitting diode (LED) optical source.4.The input irradiance is supplied by a GaN/SiC light-emitting diode with the following characteristics: peak wavelength λp = 428 nm,spectral halfwidth Δλ½ = 65 nm.5.The input irradiance is supplied by an InGaN light-emitting diode with the following characteristics: peak wavelength λp = 470 nm,spectral halfwidth Δλ½ = 35 nm.6.The input irradiance is supplied by a GaP light-emitting diode with the following characteristics: peak wavelength λp = 565 nm,spectral halfwidth Δλ½ = 28 nm.7.The input irradiance is supplied by an AlGaAs light-emitting diode with the following characteristics: peak wavelength λp = 645 nm,spectral halfwidth Δλ½ = 25 nm.8.Irradiance responsivity is characterized over the range V O = 0.1 V to 4.5 V. The best-fit straight line of Output Voltage V O versusIrradiance E e over this range will typically have a positive extrapolated V O value for E e = 0.9.Power supply rejection ratio PSRR is defined as 20 log (ΔV DD (f)/ΔV O (f)) with V DD (f = 0) = 5 V and V O (f = 0) = 2 V.TSL257HIGH-SENSITIVITYLIGHT-TO-VOLTAGE CONVERTERTAOS023E − SEPTEMBER 2007Switching Characteristics at V DD = 5 V , T A = 25°C, λp = 470 nm, R L = 10 k Ω (unless otherwise noted)PARAMETERTEST CONDITIONS MINTYP MAXUNIT t r Output pulse rise time, 10% to 90% of final value See Note 10 and Figure 1160250μs t f Output pulse fall time, 10% to 90% of final value See Note 10 and Figure 1150250μs t sOutput settling time to 1% of final value See Note 10 and Figure 1330μs Integrated noise voltage f = dc to 1 kHz E e = 0200μVrmsf = 10 Hz E e= 06V Output noise voltage, rms f = 100 Hz E e = 06V/√Hz rmsnp g ,f = 1 kHzE e = 07μ/NOTE 10:Switching characteristics apply over the range V O = 0.1 V to 4.5 V.VOLTAGE WAVEFORMTEST CIRCUITInputE e 10%90%Output (see Note B)t r Outputt f90%10%NOTES: A.The input irradiance is supplied by a pulsed InGaN light-emitting diode with the following characteristics: λp = 470 nm,t r < 1 μs, t f < 1 μs.B.The output waveform is monitored on an oscilloscope with the following characteristics: t r < 100 ns, Z i ≥ 1 M Ω, C i ≤ 20 pF.Figure 1. Switching TimesTSL257HIGH-SENSITIVITYLIGHT-TO-VOLTAGE CONVERTERTAOS023E − SEPTEMBER 2007TYPICAL CHARACTERISTICSFigure 20.60300500700900R e l a t i v e R e s p o n s i v i t y1.211001.00.80.4λ − Wavelength − nm0.21.41.6PHOTODIODE SPECTRAL RESPONSIVITYFigure 320080604010 f − Frequency − Hz10102106105104103P o w e r S u p p l y R e j e c t i o n R a ti o — d B307050POWER SUPPLY REJECTION RATIOvsFREQUENCYFigure 4421010DARK VOLTAGEvsFREE-AIR TEMPERATURE− D a r k V o l t a g e − m VV D 3T A − Free-Air Temperature − °C97658Figure 50NORMALIZED RESPONSEvsANGULAR DISPLACEMENT−90−70−50−3010305070900.10.20.30.40.50.60.70.80.91.0N o r m a l i z e d R e s p o n s e−10Angular Displacement − 5TSL257HIGH-SENSITIVITYLIGHT-TO-VOLTAGE CONVERTERTAOS023E − SEPTEMBER 2007APPLICATION INFORMATIONPCB Pad LayoutSuggested PCB pad layout guidelines for the SM surface mount package are shown in Figure 6.NOTES: A.All linear dimensions are in millimeters.B.This drawing is subject to change without notice.Figure 6. Suggested SM Package PCB LayoutTSL257HIGH-SENSITIVITYLIGHT-TO-VOLTAGE CONVERTERTAOS023E − SEPTEMBER 2007MECHANICAL DATAThe device is supplied in a clear plastic three-lead sidelooker through-hole package (S). PACKAGE S PLASTIC SINGLE-IN-LINE SIDE-LOOKER PACKAGE2TOP VIEWSIDE VIEWFRONT VIEWLead Free AvailablePbNOTES: A.All linear dimensions are in millimeters; tolerance is ± 0.25 mm unless otherwise stated.B.Dimension is to center of lens arc, which is located below the package face.C.The integrated photodiode active area is round with a typical diameter of 0.75 mm and is typically located in the center of the lensand 0.97 mm below the top of the lens surface.D.Index of refraction of clear plastic is 1.55.E.Lead finish for TSL257: solder dipped, 63% Sn/37% Pb. Lead finish for TSL257−LF: solder dipped, 100% Sn.F.This drawing is subject to change without notice.Figure 7. Package S — Single-In-Line Side-Looker Package ConfigurationTSL257HIGH-SENSITIVITYLIGHT-TO-VOLTAGE CONVERTERTAOS023E − SEPTEMBER 2007MECHANICAL DATAPACKAGE SM PLASTIC SURFACE MOUNT SIDE-LOOKER PACKAGETOP VIEWSIDE VIEWFRONT VIEWNOTES: A.All linear dimensions are in millimeters; tolerance is ± 0.25 mm unless otherwise stated.B.Dimension is to center of lens arc, which is located below the package face.C.The integrated photodiode active area is typically located in the center of the lens and 0.97 mm below the top of the lens surface.D.Index of refraction of clear plastic is 1.55.E.Lead finish for TSL257SM −LF: solder dipped, 100% Sn.F.This drawing is subject to change without notice.Figure 8. Package SM — Surface Mount Side-Looker Package ConfigurationTSL257HIGH-SENSITIVITYLIGHT-TO-VOLTAGE CONVERTERTAOS023E − SEPTEMBER 2007PRODUCTION DATA — information in this document is current at publication date. Products conform to specifications in accordance with the terms of Texas Advanced Optoelectronic Solutions, Inc. standard warranty. Production processing does not necessarily include testing of all parameters.LEAD-FREE (Pb-FREE) and GREEN STATEMENTPb-Free (RoHS) TAOS’ terms Lead-Free or Pb-Free mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TAOS Pb-Free products are suitable for use in specified lead-free processes.Green (RoHS & no Sb/Br) TAOS defines Green to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material).Important Information and Disclaimer The information provided in this statement represents TAOS’ knowledge and belief as of the date that it is provided. TAOS bases its knowledge and belief on information provided by third parties,and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TAOS has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. TAOS and TAOS suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.NOTICETexas Advanced Optoelectronic Solutions, Inc. (TAOS) reserves the right to make changes to the products contained in this document to improve performance or for any other purpose, or to discontinue them without notice. Customers are advised to contact TAOS to obtain the latest product information before placing orders or designing TAOS products into systems.TAOS assumes no responsibility for the use of any products or circuits described in this document or customer product design, conveys no license, either expressed or implied, under any patent or other right, and makes no representation that the circuits are free of patent infringement. TAOS further makes no claim as to the suitability of its products for any particular purpose, nor does TAOS assume any liability arising out of the use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages.TEXAS ADVANCED OPTOELECTRONIC SOLUTIONS, INC. PRODUCTS ARE NOT DESIGNED OR INTENDED FOR USE IN CRITICAL APPLICATIONS IN WHICH THE FAILURE OR MALFUNCTION OF THE TAOS PRODUCT MAY RESULT IN PERSONAL INJURY OR DEATH. 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TSPL2指令集中文肯定Revise History目錄表DOCUMENT CONVENTIONS................................................................................................. .................. I SETUP AND SYSTEM COMMANDS.. (1)SIZE (1)GAP (2)BLINE (4)OFFSET (5)SPEED (6)DENSITY (7)DIRECTION AND MIRROR IMAGE (8)REFERENCE (9)COUNTRY (10)CODEPAGE (11)CLS (12)FEED (13)BACKFEED (14)FORMFEED (15)HOME (16)PRINT (17)SOUND (18)CUT (19)LIMITFEED (20)SELFTEST (21)CONFIG (22)LABEL FORMATTING COMMANDS (23) BAR (23)BARCODE (24)BITMAP (28)BOX (30)DMATRIX (31)ERASE (32)MAXICODE (33)PDF417 (35)PUTBMP (39)PUTPCX (40)QRCODE (41)REVERSE (44)TEXT (45)STATUS POLLING COMMANDS (RS-232) (47) !? (47)!R (48)~!@ (49)~!A (50)~!C (51)~!D (52)~!F (53)~!I (54)~!T (55)MESSAGE TRANSLATION PROTOCOLS (56) ~# (56)COMMANDS FOR WINDOWS DRIVER (57) !B (57)!J (58)!N (59)FILE MANAGEMENT COMMANDS (60) EOP (62)FILES (63)KILL (64)MOVE (65)RUN (66)BASIC COMMANDS AND FUNCTIONS (67) ABS( ) (67)ASC( ) (68)CHR$( ) (69)END (70)EOF( ) (71)OPEN (72)READ (74)SEEK (76)LOF( ) (77)FREAD$( ) (78)FOR...NEXT .. (79)IF...THEN...ELSE...ENDIF. (80) GOSUB...RETURN .. (83)GOTO (84)INP$( ) (85)INPUT (86)REM (87)OUT (88)GETKEY( ) (89)INT( ) (90)LEFT$( ) (91)LEN( ) (92)MID$( ) (93)RIGHT$( ) (94)STR$( ) (95)VAL( ) (96)BEEP (97)DEVICE RECONFIGURATION COMMANDS (98) SET COUNTER (98)SET CUTTER (99)SET PARTIAL_CUTTER (100)SET BACK (101)SET KEY1, SET KEY2, SET KEY3 (102)SET LED1, SET LED2, SET LED3 (104)SET PEEL (105)SET TEAR (106)SET GAP (107)SET HEAD (109)SET RIBBON (110)SET COM1 (111)SET PRINTKEY (112)SET REPRINT (114)PEEL (115)LED1, LED2, LED3 (116)KEY1, KEY2, KEY3 (117)PRINTER GLOBAL VARIABLES (118)@LABEL (118)YEAR (119)MONTH (120)DATE (121)HOUR (123)MINUTE (124)SECOND (125)@YEAR (126)@MONTH (127)@DATE (128)@DAY (129)@HOUR (130)@MINUTE (131)@SECOND (132)文件中的习惯用法此手冊中出現的习惯用法。

■NEW COMER制动系统:轮胎规格:燃油箱容积:净质量:长X宽X高:轴距:最小离地间隙:车架鹹 悬挂系统:贝纳利发动缸径X 冲程:排量: 压缩比: 最大功率: 最大扭矩: 燃油供应方式:点火旗: 启动丑: 排气磁 变速系统:液冷，单缸 78.0mmx<249mL 12.0:12OkW （1O5 21N-m （90 电喷TU电启动 长效催化帛 世多片帝 越殆铤 2090mm x 1375mm 170mm 钢管编织丘（前）预载135nwn^^（后）中置60mm^（前）双2C +对触活（后）240! +单活塞V（前）112 （后）150/18L 160kgNEW COMER车海领航高离地间隙41mm和中器揺臂你即差路况从开启新世界仅从排量来看，称TRR251为“入门级”是正确的，但这款源于贝纳利的特色车型绝对不是一款简单的入门级多功能车，哪怕是大哥rRK502也无法遮蔽它的光芒。

此车搭载了源于"小黄龙”的单缸液冷DOHC4气门高压缩比发动机，设置了内置平衡轴，采用可靠的电喷系统、TLI点火，爆发力强、运转平稳，国四排放、往返式6挡变速，而最大功率20.0k\\(105()0r/min)、最大扭矩21.0N-m （9000r/min）极速超ill30km/h的性能表现，也让同级别对手无法骄傲。

52JANUARY2019《摩托车杂志》NEW COMER车海领航TRK251的车型定位是“轻量级”，厂家在车身规格、自重等方面掌握着尺度，尽可能地让这款面向新手的车型轻灵而易于掌控，2090m m的整车长度和1375m m的轴距设定显然是适中的。

在整体框架上，该车仍沿用已在之前车款上得到验证的钢管编织车架，整车的刚性值得信赖。

整体压铸的轻量化轮網配前11()7()-17＞后15060-17规格的真空胎，具有较强的路况适应能力。

在悬挂系统，前悬挂4limn的直径属于同级别之最了，再加上120mm的有效行程，完全能够胜任整车“全地形”的性能需求。