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v1.0可编写可改正半导体微电子专业词汇中英文比较Accelerated testing加快实验Acceptor受主Acceptor atom受主原子Accumulation累积、聚积Accumulating contact累积接触Accumulation region累积区Accumulation layer累积层Acoustic Surface Wave声表面波Active region有源区Active component 有源元Active device有源器件Activation激活Activation energy激活能Active region有源（放大）区A/D conversion模拟 - 数字变换Adhesives粘接剂Admittance导纳Aging老化Airborne空载Allowed band允带allowance容限，公差Alloy-junction device合金结器件Aluminum(Aluminum)铝Aluminum – oxide铝氧化物Aluminum Nitride氮化铝Aluminum passivation铝钝化Ambipolar 双极的Ambient temperature环境温度A M light振幅调制光，调幅光amplitude limiter限幅器Amorphous 无定形的，非晶体的Amplifier功放放大器Analogue(Analog) comparator模拟比较器Angstrom埃Anneal退火Anisotropic各向异性的Anode 阳极Antenna 天线Aperture孔径Arsenide (As)砷Array阵列Atomic原子的Atom Clock原子钟Attenuation衰减Audio 声频Auger 俄歇Automatic自动的Automotive汽车的Availability适用性Avalanche雪崩Avalanche breakdown雪崩击穿Avalanche excitation雪崩激发Background carrier本底载流子Background doping本底混杂Backward 反向Backward bias反向偏置Ball bond球形键合Band 能带Band gap能带空隙Bandwidth带宽Bar 巴条发光条Barrier势垒Barrier layer势垒层Barrier width势垒宽度Base 基极Base contact基区接触Base stretching基区扩展效应Base transit time基区渡越时间Base transport efficiency基区输运系数Base-width modulation基区宽度调制Batch批次Battery电池Beam 束光束电子束Bench 工作台Bias偏置Bilateral switch双向开关Binary code二进制代码Binary compound semiconductor二元化合物半导体Bipolar双极性的Bipolar Junction Transistor (BJT)双极晶体管Bit位比特Blocking band阻带Body - centered体心立方Body-centred cubic structure体立心构造Boltzmann波尔兹曼Bond 键、键合Bonding electron价电子Bonding pad键合点Boron 硼Borosilicate glass硼硅玻璃Bottom-up由下而上的Boundary condition界限条件Bound electron约束电子Bragg effect布拉格效应Breadboard模拟板、实验板Break down击穿Break over转折Brillouin布里渊 FBrillouin zone布里渊区Buffer缓冲器Built-in内建的Build-in electric field内建电场Bulk 体/ 体内Bulk absorption体汲取Bulk generation体产生Bulk recombination体复合Burn-in老化Burn out烧毁Buried channel埋沟Buried diffusion region隐埋扩散区Bus 总线Calibration校准，检定，定标、刻度，分度Capacitance电容Capture cross section俘获截面Capture carrier俘获载流子Carbon dioxide (CO2)二氧化碳Carrier载流子、载波Carry bit进位位Cascade 级联Case 管壳Cathode 阴极Cavity腔体Center中心Ceramic 陶瓷（的）Channel 沟道Channel breakdown沟道击穿Channel current沟道电流Channel doping沟道混杂Channel shortening沟道缩短Channel width沟道宽度Characteristic impedance特点阻抗Charge 电荷、充电Charge-compensation effects电荷赔偿效应Charge conservation电荷守恒Charge drive/exchange/sharing/transfer/storage电荷驱动 / 互换 / 共享 / 转移 / 储存Chemical etching化学腐化法Chemically-Polish化学抛光Chemically-Mechanically Polish (CMP)化学机械抛光Chemical vapor deposition (cvd)化学汽相淀积Chip 芯片Chip yield芯片成品率Circuit电路Clamped 箝位Clamping diode箝位二极管Cleavage plane解理面Clean 冲洗Clock rate 时钟频次Clock generator时钟发生器Clock flip-flop时钟触发器Close-loop gain闭环增益Coating涂覆涂层Coefficient of thermal expansion热膨胀系数Coherency相关性Collector集电极Collision碰撞Compensated OP-AMP 赔偿运放Common-base/collector/emitter connection共基极/集电极 / 发射极连结Common-gate/drain/source connection共栅/漏/源连结Common-mode gain 共模增益Common-mode input 共模输入Common-mode rejection ratio (CMRR)共模克制比Communication通讯Compact 致密的Compatibility兼容性Compensation赔偿Compensated impurities赔偿杂质Compensated semiconductor赔偿半导体Complementary Darlington circuit互补达林顿电路Complementary Metal-Oxide-SemiconductorField-Effect-Transistor(CMOS)互补金属氧化物半导体场效应晶体管Computer-aided design(CAD)/test(CAT)/manufacture(CAM)计算机协助设计/测试 / 制造Component 元件Compound Semiconductor化合物半导体Conductance电导Conduction band (edge)导带 ( 底 )Conduction level/state导带态Conductor 导体Conductivity电导率Configuration构造Conlomb 库仑Constants物理常数Constant energy surface等能面Constant-source diffusion恒定源扩散Contact接触Continuous wave连续波Continuity equation连续性方程Contact hole接触孔Contact potential接触电势Controlled受控的Converter变换器Conveyer传输器Cooling冷却Copper interconnection system铜互连系统Corrosion腐化Coupling耦合Covalent共阶的Crossover交错Critical临界的Cross-section横断面Crucible坩埚Cryogenic cooling system冷却系统Crystal defect/face/orientation/lattice晶体缺点 / 晶面 / 晶向 / 晶格Cubic crystal system立方晶系Current density电流密度Curvature曲率Current drift/drive/sharing电流漂移 / 驱动 / 共享Current Sense电流取样Curve曲线Custom integrated circuit定制集成电路Cut off截止Cylindrical柱面的Czochralshicrystal直立单晶Czochralski technique切克劳斯基技术（Cz 法直拉晶体J） )Dangling bonds悬挂键Dark current暗电流Dead time空载时间Decade 十进制Decibel (dB)分贝Decode 解码Deep acceptor level深受主能级Deep donor level深施主能级Deep energy level深能级Deep impurity level深度杂质能级Deep trap深圈套Defeat 缺点Degenerate semiconductor简并半导体Degeneracy简并度Degradation退化Degree Celsius(centigrade) /Kelvin摄氏 / 开氏温度Delay 延缓Density密度Density of states态密度Depletion耗尽Depletion approximation耗尽近似Depletion contact耗尽接触Depletion depth耗尽深度Depletion effect耗尽效应Depletion layer耗尽层Depletion MOS耗尽MOSDepletion region耗尽区Deposited film淀积薄膜Deposition process淀积工艺Design rules设计规则Detector探测器Developer显影剂Diamond 金刚石Die芯片（复数dice ）Diode二极管Dielectric Constant介电常数Dielectric isolation介质隔绝Difference-mode input差模输入Differential amplifier差分放大器Differential capacitance微分电容Diffraction衍射Diffusion 扩散Diffusion coefficient扩散系数Diffusion constant扩散常数Diffusivity扩散率Diffusion capacitance/barrier/current/furnace扩散电容 / 势垒 / 电流 / 炉Digital circuit数字电路Dimension (1)尺寸 (2)量钢 (3) 维，度Diode 二极管Dipole domain偶极畴Dipole layer偶极层Direct-coupling直接耦合Direct-gap semiconductor直接带隙半导体Direct transition直接跃迁Directional antenna定向天线Discharge放电Discrete component分立元件Disorder无序的Display显示器Dissipation耗散Dissolution溶解Distribution散布Distributed capacitance散布电容Distributed model散布模型Displacement位移Dislocation位错Domain 畴Donor 施主Donor exhaustion施主耗尽Dopant 混杂剂Doped semiconductor混杂半导体Doping concentration混杂浓度Dose 剂量Double-diffusive MOS(DMOS)双扩散MOS Drift漂移Drift field漂移电场Drift mobility迁徙率Dry etching干法腐化Dry/wet oxidation干/湿法氧化Dose 剂量Dual-polarization双偏振，双极化Duty cycle工作周期Dual-in-line package （DIP）双列直插式封装Dynamics 动向Dynamic characteristics动向属性Dynamic impedance动向阻抗Early effect厄利效应Early failure初期无效Effect效应Effective mass有效质量Electric Erase Programmable Read Only Memory(E2PROM)电可擦除只读储存器Electrode电极Electromigration电迁徙Electron affinity电子亲和势Electron-beam电子束Electroluminescence电致发光Electron gas电子气Electron trapping center电子俘获中心Electron Volt (eV)电子伏Electro-optical光电的Electrostatic静电的Element元素/元件/配件Elemental semiconductor元素半导体Ellipse椭圆Emitter发射极Emitter-coupled logic发射极耦合逻辑Emitter-coupled pair发射极耦合对Emitter follower射随器Empty band空带Emitter crowding effect发射极集边（拥堵）效应Endurance test =life test寿命测试Energy state能态Energy momentum diagram 能量 - 动量 (E-K) 图Enhancement mode 加强型模式 EnhancementMOS 加强性 MOS Enteric ( 低 ) 共溶的Environmental test环境测试Epitaxial外延的Epitaxial layer外延层Epitaxial slice外延片Epoxy 环氧的Equivalent circuit等效电路Equilibrium majority /minority carriers均衡多半/少数载流子Equipment设施Erasable Programmable ROM (EPROM) 可搽取（编程）储存器Erbium laser掺铒激光器Error function complement余偏差函数Etch刻蚀Etchant刻蚀剂Etching mask抗蚀剂掩模Excess carrier节余载流子Excitation energy激发能Excited state激发态Exciton激子Exponential指数的Extrapolation外推法Extrinsic非本征的Extrinsic semiconductor杂质半导体Fabry-Perot amplifier法布里 - 珀罗放大器Face - centered面心立方Fall time降落时间Fan-in扇入Fan-out扇出Fast recovery快恢复Fast surface states快表面态Feedback 反应Fermi level费米能级Femi potential费米势Fiber optic光纤Field effect transistor场效应晶体管Field oxide场氧化层Figure of merit质量因数Filter滤波器Filled band满带Film薄膜Fine pitch细节距Flash memory闪存储存器Flat band平带Flat pack扁平封装Flatness平坦度Flexible柔性的Flicker noise闪耀（变）噪声Flip-chip倒装芯片Flip- flop toggle触发器翻转Floating gate浮栅Fluoride etch氟化氢刻蚀Focal plane焦平面Forbidden band 禁带Formulation列式，表达Forward bias正向偏置Forward blocking /conducting正向阻断/导通Free electron自由电子Frequency deviation noise频次漂移噪声Frequency response频次响应Function函数Gain 增益Gallium-Arsenide(GaAs)砷化镓Gallium Nitride氮化镓Gate 门、栅、控制极Gate oxide栅氧化层Gate width栅宽Gauss（ian ）高斯Gaussian distribution profile高斯混杂散布Generation-recombination产生-复合Geometries几何尺寸Germanium(Ge) 锗Gold 金Graded 缓变的Graded (gradual) channel缓变沟道Graded junction缓变结Grain晶粒v1.0可编写可改正Gradient 梯度Graphene 石墨烯Grating 光栅Green laser绿光激光器Ground 接地Grown junction生长结Guard ring保护环Guide wave导波波导Gunn - effect狄氏效应Gyroscope陀螺仪Hardened device辐射加固器件Harmonics谐波Heat diffusion热扩散Heat sink散热器、热沉Heavy/light hole band重/ 轻空穴带Hell - effect霍尔效应Hertz 赫兹Heterojunction异质结Heterojunction structure异质结构造Heterojunction Bipolar Transistor（ HBT）异质结双极型晶体High field property高场特征High-performance MOS(H-MOS) 高性能 MOS器件High power大功率Hole 空穴Homojunction同质结Horizontal epitaxial reactor卧式外延反响器Hot carrier热载流子Hybrid integration混淆集成Illumination (1)照明 (2)照明学Image - force镜象力Impact ionization碰撞电离Impedance阻抗Imperfect structure不完好构造Implantation dose注入剂量Implanted ion注入离子Impurity 杂质Impurity scattering杂志散射Inch 英寸Incremental resistance电阻增量（微分电阻）In-contact mask接触式掩模Index of refraction折射率Indium 铟Indium tin oxide (ITO)铟锡氧化物Inductance电感Induced channel感觉沟道Infrared 红外的Injection注入Input power输入功率Insertion loss插入消耗Insulator绝缘体Insulated Gate FET(IGFET)绝缘栅 FET Integrated injection logic集成注入逻辑Integration集成、积分Integrated Circuit集成电路Interconnection互连Interconnection time delay互连延时Interdigitated structure交互式构造Interface界面Interference干预International system of unions国际单位制Internally scattering谷间散射Interpolation内插法Intrinsic本征的Intrinsic semiconductor本征半导体Inverse operation反向工作v1.0可编写可改正Inversion反型Inverter倒相器Ion 离子Ion beam离子束Ion etching离子刻蚀Ion implantation离子注入Ionization电离Ionization energy电离能Irradiation辐照Isolation land隔绝岛Isotropic各向同性Junction FET(JFET)结型场效应管Junction isolation结隔绝Junction spacing结间距Junction side-wall结侧壁Laser 激光器Laser diode激光二极管Latch up闭锁Lateral横向的Lattice晶格Layout疆域Lattice binding/cell/constant/defect/distortion晶格结协力 / 晶胞 / 晶格 / 晶格常熟 / 晶格缺点 / 晶格畸变Lead 铅Leakage current（泄）漏电流Life time寿命linearity线性度Linked bond共价键Liquid Nitrogen液氮Liquid －phase epitaxial growth technique液相外延生长技术Lithography光刻Light Emitting Diode(LED)发光二极管Linearity线性化Liquid液体Lock in锁定Longitudinal纵向的Long life长寿命Lumped model 集总模型Magnetic磁的Majority carrier多半载流子Mask 掩膜板，光刻板Mask level掩模序号Mask set掩模组Mass - action law质量守恒定律Master-slave D flip-flop主从 D 触发器Matching般配Material资料Maxwell麦克斯韦Mean free path均匀自由程Mean time before failure (MTBF)均匀工作时间Mechanical 机械的Membrane (1) 薄腊，膜片 (2)隔阂Megeto - resistance磁阻Mesa 台面MESFET-Metal Semiconductor金属半导体 FET Metalorganic Chemical Vapor Deposition MOCVD金属氧化物化学汽相淀积Metallization金属化Metal oxide semiconductor (MOS)金属氧化物半导体MeV 兆电子伏Microelectronic technique微电子技术Microelectronics微电子学Microelectromechanical System (MEMS)微电子机械系统Microwave微波v1.0可编写可改正Millimeterwave毫米波Minority carrier少量载流子Misfit失配Mismatching失配Mobility迁徙率Module 模块Modulate调制Molecular crystal分子晶体Monolithic IC单片MOSFET金属氧化物半导体场效应晶体管Mount 安装Multiplication倍增Modulator调制Multi-chip IC多芯片ICMulti-chip module(MCM)多芯片模块Multilayer多层Multiplication coefficient倍增因子Multiplexer复用器Multiplier倍增器Naked chip未封装的芯片（裸片）Nanometer 纳米Nanotechnology纳米技术Negative feedback负反应Negative resistance负阻Negative-temperature-coefficient负温度系数Nesting 套刻Noise figure噪声系数Nonequilibrium非均衡Nonvolatile非挥发（易失）性Normally off/on常闭 / 开Nuclear 核Numerical analysis数值剖析Occupied band满带Offset 偏移、失调On standby 待命状态Ohmic contact欧姆接触Open circuit开路Operating point工作点Operating bias工作偏置Operational amplifier (OPAMP)运算放大器Optical photon光子Optical quenching光猝灭Optical transition光跃迁Optical-coupled isolator光耦合隔绝器Organic semiconductor有机半导体Orientation晶向、定向Oscillator振荡器Outline外形Out-of-contact mask非接触式掩模Output characteristic输出特征Output power输出功率Output voltage swing输出电压摆幅Overcompensation 过赔偿Over-current protection过流保护Over shoot过冲Over-voltage protection过压保护Overlap交迭Overload过载Oscillator振荡器Oxide氧化物Oxidation氧化Oxide passivation氧化层钝化Package 封装Pad 压焊点Parameter参数Parasitic effect寄奏效应Parasitic oscillation寄生振荡Pass band 通带Passivation钝化Passive component无源元件Passive device无源器件Passive surface钝化界面Parasitic transistor寄生晶体管Pattern图形Payload有效载荷Peak-point voltage峰点电压Peak voltage峰值电压Permanent-storage circuit永远储存电路Period周期Permeable - base可浸透基区Phase-lock loop锁相环Phase drift相移Phonon spectra 声子谱Photo conduction光电导Photo diode光电二极管Photoelectric cell光电池Photoelectric effect光电效应Photonic devices光子器件v1.0可编写可改正Photolithographic process光刻工艺Photoluminescence光致发光Photo resist（光敏）抗腐化剂Photo mask光掩模Piezoelectric effect压电效应Pin 管脚Pinch off 夹断Pinning of Fermi level费米能级的钉扎（效应）Planar process平面工艺Planar transistor平面晶体管Plasma 等离子体Plane平面的Plasma 等离子体Plate板电路板P-N junction pn结Poisson equation泊松方程Point contact点接触Polarity极性Polycrystal多晶Polymer semiconductor聚合物半导体Poly-silicon多晶硅Positive正的Potential (电)势Potential barrier势垒Potential well势阱Power electronic devices电力电子器件Power dissipation功耗Power transistor功率晶体管Preamplifier前置放大器Primary flat主平面Print-circuit board(PCB)印制电路板Probability几率Probe 探针Procedure工艺Process工艺Projector投影仪Propagation delay传输延时Proton质子Proximity effect周边效应Pseudopotential method赝势法Pump 泵浦Punch through穿通Pulse triggering/modulating脉冲触发/调制Pulse Widen Modulator(PWM)脉冲宽度调制Punchthrough穿通Push-pull stage推挽级Q Q 值Quality factor质量因子Quantization量子化Quantum 量子Quantum efficiency量子效应Quantum mechanics量子力学Quasi– Fermi －level准费米能级Quartz石英Radar雷达Radiation conductivity辐射电导率Radiation damage 辐射损害Radiation flux density辐射通量密度Radiation hardening辐射加固Radiation protection辐射保护Radiative - recombination辐照复合Radio无线电射电射频Radio-frequency RF射频Raman 拉曼Random 随机Range 测距Radio比率系数Ray 射线Reactive sputtering source反响溅射源Real time及时Receiver接收机Recombination复合Recovery diode恢复二极管Record 记录Recovery time恢复时间Rectifier整流器（管）Rectifying contact整流接触Red light红光Reference基准点基准参照点Refractive index折射率Register存放器Regulate控制调整Relative相对的Relaxation驰豫Relaxation lifetime驰豫时间Relay中继Reliability靠谱性Remote 远程v1.0可编写可改正Repeatability可重复性Reproduction重复制造Residual current节余电流Resonance 谐振Resin树脂Resistance电阻Resistor电阻器Resistivity电阻率Regulator稳压管（器）Resolution分辨率Response time响应时间Return signal回波信号Reverse 反向的Reverse bias反向偏置Ribbon 光纤带Ridge waveguide脊形波导Ring laser环形激光器Rotary wave旋转波Run 运转Sampling circuit取样电路Sapphire 蓝宝石（ Al2O3）Satellite valley卫星谷Saturated current range电流饱和区Scan 扫描Scaled down按比率减小Scattering散射Schematic layout表示图，简图Schottky肖特基Schottky barrier肖特基势垒Schottky contact肖特基接触Screen 挑选Scribing grid划片格Secondary flat次平面Seed crystal籽晶Segregation分凝Selectivity选择性Self aligned自瞄准的Self diffusion自扩散Semiconductor半导体Semiconductor laser半导体激光器Semiconductor-controlled rectifier半导体可控硅Sensitivity敏捷度Sensor 传感器Serial 串行 / 串连Series inductance串连电感Settle time成即刻间Sheet resistance薄层电阻Shaping成型Shield障蔽Shifter移相器Short circuit短路Shot noise散粒噪声Shunt 分流Sidewall capacitance边墙电容Signal信号Silica glass石英玻璃Silicon硅Silicon carbide碳化硅Silicon dioxide (SiO2)二氧化硅Silicon Nitride(Si3N4)氮化硅Silicon On Insulator绝缘体上硅Silver whiskers银须Simple cubic简立方Simulation模拟Single crystal单晶Sink 热沉Sinter 烧结Skin effect趋肤效应Slot 槽隙Slow wave 慢波Smooth 圆滑的Subthreshold亚阈值的Solar battery/cell太阳能电池Solid circuit固体电路Solid Solubility固溶度Solution 溶液Sonband 子带Source 源极Source follower源随器Space charge空间电荷Space Craft宇宙飞翔器Spacing 间距Specific heat(PT)比热Spectral 光谱Spectrum光谱(复数)Speed-power product速度功耗乘积Spherical球面的Spin自旋v1.0可编写可改正Split分裂Spontaneous emission自觉发射Spot斑点Spray喷涂Spreading resistance扩展电阻Sputter 溅射Square root平方根Stability稳固性Stacking fault层错Standard标准的Standing wave驻波State-of-the-art最新技术Static characteristic静态特征Statistical analysis统计剖析Steady state稳态Step motor步进式电动机Stimulated emission受激发射Stimulated recombination受激复合Stopband阻带Storage time储存时间Stress 应力Stripline带状线Subband 次能带Sublimation升华Submillimeter亚毫米波Substrate衬底Substitutional替位式的Superconductor 超导 ( 电 ) 体Superlattice超晶格Supply电源Surface mound表面安装Surge capacity浪涌能力Switching time开关时间Switch开关Synchronizer同步器，同步装置Synthetic-aperture合成孔径System 系统Technical技术的，工艺的Telecommunication远距通讯，电信Telescope望远镜Terahertz太赫兹Terminal终端Template模板Temperature温度Tensor 张量Test 测试试验Thermal activation热激发Thermal conductivity热导率Thermal equilibrium热均衡Thermal Oxidation热氧化Thermal resistance热阻Thermal sink 热沉Thermal velocity热运动Thick- film technique厚膜技术Thin- film hybrid IC薄膜混淆集成电路Thin-Film Transistor(TFT)薄膜晶体Three dimension三维Threshold阈值Through Silicon Via硅通孔Thyistor 晶闸管Time resolution时间分辨率Tolerance公差T/R module发射 / 接收模块Transconductance跨导Transfer characteristic转移特征Transfer electron转移电子Transfer function传输函数Transient瞬态的Transistor aging(stress)晶体管老化Transit time渡越时间Transition跃迁Transition-metal silica过分金属硅化物Transition probability跃迁几率Transition region过渡区Transmissivity透射率Transmitter发射机Transceiver收发机Transport输运Transverse横向的Trap 圈套Trapping 俘获Trapped charge圈套电荷Travelling wave行波Trigger 触发Trim 分配调整Triple diffusion三重扩散Tolerance容差Tube 管子电子管Tuner调理器Tunnel(ing)地道（穿）Tunnel current地道电流Turn - off time关断时间Ultraviolet紫外的Ultrabright超亮的Ultrasonic超声的Underfilling下填补Undoped 无混杂Unijunction单结的Unipolar单极的Unit cell原（元）胞Unity- gain frequency单位增益频次Unilateral-switch单向开关Vacancy 空位Vacuum 真空Valence(value) band价带Value band edge 价带顶Valence bond价键Vapour phase汽相Varactor变容管Variable可变的v1.0可编写可改正Vector矢量Vertical垂直的Vibration振动Visible light可见光Voltage电压Volt伏特Wafer 晶片Watt瓦Wave guide波导Wavelength波长Wave-particle duality波粒二相性Wear-out烧毁Wetting浸润Wideband 宽禁带Wire引线Wire routing布线Work function功函数Worst-case device最坏状况器件X-ray X射线Yield成品率Zinc锌。
半导体微电子专业词汇中英文对照Accelerated testing 加速实验Acceptor 受主Acceptor atom 受主原子Accumulation 积累、堆积Accumulating contact 积累接触Accumulation region 积累区Accumulation layer 积累层Acoustic Surface Wave 声表面波Active region 有源区Active component 有源元Active device 有源器件Activation 激活Activation energy 激活能Active region 有源（放大）区A/D conversion 模拟-数字转换Adhesives 粘接剂Admittance 导纳Aging 老化Airborne 空载Allowed band 允带allowance 容限，公差Alloy-junction device合金结器件Aluminum(Aluminum) 铝Aluminum – oxide 铝氧化物Aluminum Nitride 氮化铝Aluminum passivation 铝钝化Ambipolar 双极的Ambient temperature 环境温度A M light 振幅调制光，调幅光amplitude limiter 限幅器Amorphous 无定形的，非晶体的Amplifier 功放放大器Analogue(Analog) comparator 模拟比较器Angstrom 埃Anneal 退火Anisotropic 各向异性的Anode 阳极Antenna 天线Aperture 孔径Arsenide (As) 砷Array 阵列Atomic 原子的Atom Clock 原子钟Attenuation 衰减Audio 声频Auger 俄歇Automatic 自动的Automotive 汽车的Availability 实用性Avalanche 雪崩Avalanche breakdown 雪崩击穿Avalanche excitation雪崩激发Background carrier 本底载流子Background doping 本底掺杂Backward 反向Backward bias 反向偏置Ball bond 球形键合Band 能带Band gap 能带间隙Bandwidth 带宽Bar 巴条发光条Barrier 势垒Barrier layer 势垒层Barrier width 势垒宽度Base 基极Base contact 基区接触Base stretching 基区扩展效应Base transit time 基区渡越时间Base transport efficiency基区输运系数Base-width modulation基区宽度调制Batch 批次Battery 电池Beam 束光束电子束Bench 工作台Bias 偏置Bilateral switch 双向开关Binary code 二进制代码Binary compound semiconductor 二元化合物半导体Bipolar 双极性的Bipolar Junction Transistor (BJT)双极晶体管Bit 位比特Blocking band 阻带Body - centered 体心立方Body-centred cubic structure 体立心结构Boltzmann 波尔兹曼Bond 键、键合Bonding electron 价电子Bonding pad 键合点Boron 硼Borosilicate glass 硼硅玻璃Bottom-up 由下而上的Boundary condition 边界条件Bound electron 束缚电子Bragg effect 布拉格效应Breadboard 模拟板、实验板Break down 击穿Break over 转折Brillouin 布里渊 FBrillouin zone 布里渊区Buffer 缓冲器Built-in 内建的Build-in electric field 内建电场Bulk 体/体内Bulk absorption 体吸收Bulk generation 体产生Bulk recombination 体复合Burn-in 老化Burn out 烧毁Buried channel 埋沟Buried diffusion region 隐埋扩散区Bus 总线Calibration 校准，检定，定标、刻度，分度Capacitance 电容Capture cross section 俘获截面Capture carrier 俘获载流子Carbon dioxide (CO2) 二氧化碳Carrier 载流子、载波Carry bit 进位位Cascade 级联Case 管壳Cathode 阴极Cavity 腔体Center 中心Ceramic 陶瓷（的）Channel 沟道Channel breakdown 沟道击穿Channel current 沟道电流Channel doping 沟道掺杂Channel shortening 沟道缩短Channel width 沟道宽度Characteristic impedance 特征阻抗Charge 电荷、充电Charge-compensation effects 电荷补偿效应Charge conservation 电荷守恒Charge drive/exchange/sharing/transfer/storage 电荷驱动/交换/共享/转移/存储Chemical etching 化学腐蚀法Chemically-Polish 化学抛光Chemically-Mechanically Polish (CMP) 化学机械抛光Chemical vapor deposition (cvd)化学汽相淀积Chip 芯片Chip yield 芯片成品率Circuit 电路Clamped 箝位Clamping diode 箝位二极管Cleavage plane 解理面Clean 清洗Clock rate 时钟频率Clock generator 时钟发生器Clock flip-flop 时钟触发器Close-loop gain 闭环增益Coating 涂覆涂层Coefficient of thermal expansion 热膨胀系数Coherency 相干性Collector 集电极Collision 碰撞Compensated OP-AMP 补偿运放Common-base/collector/emitter connection 共基极/集电极/发射极连接Common-gate/drain/source connection 共栅/漏/源连接Common-mode gain 共模增益Common-mode input 共模输入Common-mode rejection ratio (CMRR) 共模抑制比Communication 通信Compact 致密的Compatibility 兼容性Compensation 补偿Compensated impurities 补偿杂质Compensated semiconductor 补偿半导体Complementary Darlington circuit 互补达林顿电路Complementary Metal-Oxide-SemiconductorField-Effect-Transistor(CMOS) 互补金属氧化物半导体场效应晶体管Computer-aided design(CAD)/test(CAT)/manufacture(CAM) 计算机辅助设计/ 测试 /制造Component 元件Compound Semiconductor 化合物半导体Conductance 电导Conduction band (edge) 导带(底)Conduction level/state 导带态Conductor 导体Conductivity 电导率Configuration 结构Conlomb 库仑Constants 物理常数Constant energy surface 等能面Constant-source diffusion恒定源扩散Contact 接触Continuous wave 连续波Continuity equation 连续性方程Contact hole 接触孔Contact potential 接触电势Controlled 受控的Converter 转换器Conveyer 传输器Cooling 冷却Copper interconnection system 铜互连系统Corrosion 腐蚀Coupling 耦合Covalent 共阶的Crossover 交叉Critical 临界的Cross-section 横断面Crucible坩埚Cryogenic cooling system 冷却系统Crystal defect/face/orientation/lattice 晶体缺陷/晶面/晶向/晶格Cubic crystal system 立方晶系Current density 电流密度Curvature 曲率Current drift/drive/sharing 电流漂移/驱动/共享Current Sense 电流取样Curve 曲线Custom integrated circuit 定制集成电路Cut off 截止Cylindrical 柱面的Czochralshicrystal 直立单晶Czochralski technique 切克劳斯基技术（Cz法直拉晶体J）)Dangling bonds 悬挂键Dark current 暗电流Dead time 空载时间Decade 十进制Decibel (dB) 分贝Decode 解码Deep acceptor level 深受主能级Deep donor level 深施主能级Deep energy level 深能级Deep impurity level 深度杂质能级Deep trap 深陷阱Defeat 缺陷Degenerate semiconductor 简并半导体Degeneracy 简并度Degradation 退化Degree Celsius(centigrade) /Kelvin 摄氏/开氏温度Delay 延迟Density 密度Density of states 态密度Depletion 耗尽Depletion approximation 耗尽近似Depletion contact 耗尽接触Depletion depth 耗尽深度Depletion effect 耗尽效应Depletion layer 耗尽层Depletion MOS 耗尽MOS Depletion region 耗尽区Deposited film 淀积薄膜Deposition process 淀积工艺Design rules 设计规则Detector 探测器Developer 显影剂Diamond 金刚石Die 芯片（复数dice）Diode 二极管Dielectric Constant 介电常数Dielectric isolation 介质隔离Difference-mode input 差模输入Differential amplifier 差分放大器Differential capacitance 微分电容Diffraction 衍射Diffusion 扩散Diffusion coefficient 扩散系数Diffusion constant 扩散常数Diffusivity 扩散率Diffusion capacitance/barrier/current/furnace 扩散电容/势垒/电流/炉Digital circuit 数字电路Dimension (1)尺寸(2)量钢(3)维，度Diode 二极管Dipole domain 偶极畴Dipole layer 偶极层Direct-coupling 直接耦合Direct-gap semiconductor 直接带隙半导体Direct transition 直接跃迁Directional antenna 定向天线Discharge 放电Discrete component 分立元件Disorder 无序的Display 显示器Dissipation 耗散Dissolution 溶解Distribution 分布Distributed capacitance 分布电容Distributed model 分布模型Displacement 位移Dislocation 位错Domain 畴Donor 施主Donor exhaustion 施主耗尽Dopant 掺杂剂Doped semiconductor 掺杂半导体Doping concentration 掺杂浓度Dose 剂量Double-diffusive MOS(DMOS)双扩散MOS Drift 漂移Drift field 漂移电场Drift mobility 迁移率Dry etching 干法腐蚀Dry/wet oxidation 干/湿法氧化Dose 剂量Dual-polarization 双偏振，双极化Duty cycle 工作周期Dual-in-line package （DIP）双列直插式封装Dynamics 动态Dynamic characteristics 动态属性Dynamic impedance 动态阻抗Early effect 厄利效应Early failure 早期失效Effect 效应Effective mass 有效质量Electric Erase Programmable Read Only Memory(E2PROM) 电可擦除只读存储器Electrode 电极Electromigration 电迁移Electron affinity 电子亲和势Electron-beam 电子束Electroluminescence 电致发光Electron gas 电子气Electron trapping center 电子俘获中心Electron Volt (eV) 电子伏Electro-optical 光电的Electrostatic 静电的Element 元素/元件/配件Elemental semiconductor 元素半导体Ellipse 椭圆Emitter 发射极Emitter-coupled logic 发射极耦合逻辑Emitter-coupled pair 发射极耦合对Emitter follower 射随器Empty band 空带Emitter crowding effect 发射极集边（拥挤）效应Endurance test =life test 寿命测试Energy state 能态Energy momentum diagram 能量-动量(E-K)图Enhancement mode 增强型模式Enhancement MOS 增强性MOSEnteric (低)共溶的Environmental test 环境测试Epitaxial 外延的Epitaxial layer 外延层Epitaxial slice 外延片Epoxy 环氧的Equivalent circuit 等效电路Equilibrium majority /minority carriers 平衡多数/少数载流子Equipment 设备Erasable Programmable ROM (EPROM)可搽取（编程）存储器Erbium laser 掺铒激光器Error function complement 余误差函数Etch 刻蚀Etchant 刻蚀剂Etching mask 抗蚀剂掩模Excess carrier 过剩载流子Excitation energy 激发能Excited state 激发态Exciton 激子Exponential 指数的Extrapolation 外推法Extrinsic 非本征的Extrinsic semiconductor 杂质半导体Fabry-Perot amplifier 法布里-珀罗放大器Face - centered 面心立方Fall time 下降时间Fan-in 扇入Fan-out 扇出Fast recovery 快恢复Fast surface states 快表面态Feedback 反馈Fermi level 费米能级Femi potential 费米势Fiber optic 光纤Field effect transistor 场效应晶体管Field oxide 场氧化层Figure of merit 品质因数Filter 滤波器Filled band 满带Film 薄膜Fine pitch 细节距Flash memory 闪存存储器Flat band 平带Flat pack 扁平封装Flatness 平整度Flexible 柔性的Flicker noise 闪烁（变）噪声Flip-chip 倒装芯片Flip- flop toggle 触发器翻转Floating gate 浮栅Fluoride etch 氟化氢刻蚀Focal plane 焦平面Forbidden band 禁带Formulation 列式，表达Forward bias 正向偏置Forward blocking /conducting 正向阻断/导通Free electron 自由电子Frequency deviation noise 频率漂移噪声Frequency response 频率响应Function 函数Gain 增益Gallium-Arsenide(GaAs) 砷化镓Gallium Nitride 氮化镓Gate 门、栅、控制极Gate oxide 栅氧化层Gate width 栅宽Gauss（ian）高斯Gaussian distribution profile 高斯掺杂分布Generation-recombination 产生-复合Geometries 几何尺寸Germanium(Ge) 锗Gold 金Graded 缓变的Graded (gradual) channel 缓变沟道Graded junction 缓变结Grain 晶粒Gradient 梯度Graphene 石墨烯Grating 光栅Green laser 绿光激光器Ground 接地Grown junction 生长结Guard ring 保护环Guide wave 导波波导Gunn - effect 狄氏效应Gyroscope 陀螺仪Hardened device 辐射加固器件Harmonics 谐波Heat diffusion 热扩散Heat sink 散热器、热沉Heavy/light hole band 重/轻空穴带Hell - effect 霍尔效应Hertz 赫兹Heterojunction 异质结Heterojunction structure 异质结结构Heterojunction Bipolar Transistor（HBT）异质结双极型晶体High field property 高场特性High-performance MOS(H-MOS)高性能MOS器件High power 大功率Hole 空穴Homojunction 同质结Horizontal epitaxial reactor 卧式外延反应器Hot carrier 热载流子Hybrid integration 混合集成Illumination (1)照明(2)照明学Image - force 镜象力Impact ionization 碰撞电离Impedance 阻抗Imperfect structure 不完整结构Implantation dose 注入剂量Implanted ion 注入离子Impurity 杂质Impurity scattering 杂志散射Inch 英寸Incremental resistance 电阻增量（微分电阻）In-contact mask 接触式掩模Index of refraction 折射率Indium 铟Indium tin oxide (ITO) 铟锡氧化物Inductance 电感Induced channel 感应沟道Infrared 红外的Injection 注入Input power 输入功率Insertion loss 插入损耗Insulator 绝缘体Insulated Gate FET(IGFET) 绝缘栅FET Integrated injection logic 集成注入逻辑Integration 集成、积分Integrated Circuit 集成电路Interconnection 互连Interconnection time delay 互连延时Interdigitated structure 交互式结构Interface 界面Interference 干涉International system of unions 国际单位制Internally scattering 谷间散射Interpolation 内插法Intrinsic 本征的Intrinsic semiconductor 本征半导体Inverse operation 反向工作Inversion 反型Inverter 倒相器Ion 离子Ion beam 离子束Ion etching 离子刻蚀Ion implantation 离子注入Ionization 电离Ionization energy 电离能Irradiation 辐照Isolation land 隔离岛Isotropic 各向同性Junction FET(JFET) 结型场效应管Junction isolation 结隔离Junction spacing 结间距Junction side-wall 结侧壁Laser 激光器Laser diode 激光二极管Latch up 闭锁Lateral 横向的Lattice 晶格Layout 版图Lattice binding/cell/constant/defect/distortion 晶格结合力/晶胞/晶格/晶格常熟/晶格缺陷/晶格畸变Lead 铅Leakage current （泄）漏电流Life time 寿命linearity 线性度Linked bond 共价键Liquid Nitrogen 液氮Liquid－phase epitaxial growth technique 液相外延生长技术Lithography 光刻Light Emitting Diode(LED) 发光二极管Linearity 线性化Liquid 液体Lock in 锁定Longitudinal 纵向的Long life 长寿命Lumped model 集总模型Magnetic 磁的Majority carrier 多数载流子Mask 掩膜板，光刻板Mask level 掩模序号Mask set 掩模组Mass - action law 质量守恒定律Master-slave D flip-flop 主从D 触发器Matching 匹配Material 材料Maxwell 麦克斯韦Mean free path 平均自由程Mean time before failure (MTBF) 平均工作时间Mechanical 机械的Membrane (1)薄腊，膜片(2)隔膜Megeto - resistance 磁阻Mesa 台面MESFET-Metal Semiconductor 金属半导体FET Metalorganic Chemical Vapor Deposition MOCVD 金属氧化物化学汽相淀积Metallization 金属化Metal oxide semiconductor (MOS)金属氧化物半导体MeV 兆电子伏Microelectronic technique 微电子技术Microelectronics 微电子学Microelectromechanical System (MEMS) 微电子机械系统Microwave 微波Millimeterwave 毫米波Minority carrier 少数载流子Misfit 失配Mismatching 失配Mobility 迁移率Module 模块Modulate 调制Molecular crystal 分子晶体Monolithic IC 单片MOSFET 金属氧化物半导体场效应晶体管Mount 安装Multiplication 倍增Modulator 调制Multi-chip IC 多芯片ICMulti-chip module(MCM) 多芯片模块Multilayer 多层Multiplication coefficient 倍增因子Multiplexer 复用器Multiplier 倍增器Naked chip 未封装的芯片（裸片）Nanometer 纳米Nanotechnology 纳米技术Negative feedback 负反馈Negative resistance 负阻Negative-temperature-coefficient负温度系数Nesting 套刻Noise figure 噪声系数Nonequilibrium 非平衡Nonvolatile 非挥发（易失）性Normally off/on 常闭/开Nuclear 核Numerical analysis 数值分析Occupied band 满带Offset 偏移、失调On standby 待命状态Ohmic contact 欧姆接触Open circuit 开路Operating point 工作点Operating bias 工作偏置Operational amplifier (OPAMP)运算放大器Optical photon 光子Optical quenching 光猝灭Optical transition 光跃迁Optical-coupled isolator 光耦合隔离器Organic semiconductor 有机半导体Orientation 晶向、定向Oscillator 振荡器Outline 外形Out-of-contact mask 非接触式掩模Output characteristic 输出特性Output power 输出功率Output voltage swing 输出电压摆幅Overcompensation 过补偿Over-current protection 过流保护Over shoot 过冲Over-voltage protection 过压保护Overlap 交迭Overload 过载Oscillator 振荡器Oxide 氧化物Oxidation 氧化Oxide passivation 氧化层钝化Package 封装Pad 压焊点Parameter 参数Parasitic effect 寄生效应Parasitic oscillation 寄生振荡Pass band 通带Passivation 钝化Passive component 无源元件Passive device 无源器件Passive surface 钝化界面Parasitic transistor 寄生晶体管Pattern 图形Payload 有效载荷Peak-point voltage 峰点电压Peak voltage 峰值电压Permanent-storage circuit 永久存储电路Period 周期Permeable - base 可渗透基区Phase-lock loop 锁相环Phase drift 相移Phonon spectra 声子谱Photo conduction 光电导Photo diode 光电二极管Photoelectric cell 光电池Photoelectric effect 光电效应Photonic devices 光子器件Photolithographic process 光刻工艺Photoluminescence 光致发光Photo resist （光敏）抗腐蚀剂Photo mask 光掩模Piezoelectric effect 压电效应Pin 管脚Pinch off 夹断Pinning of Fermi level 费米能级的钉扎（效应）Planar process 平面工艺Planar transistor 平面晶体管Plasma 等离子体Plane 平面的Plasma 等离子体Plate 板电路板P-N junction pn结Poisson equation 泊松方程Point contact 点接触Polarity 极性Polycrystal 多晶Polymer semiconductor 聚合物半导体Poly-silicon 多晶硅Positive 正的Potential (电)势Potential barrier 势垒Potential well 势阱Power electronic devices电力电子器件Power dissipation 功耗Power transistor 功率晶体管Preamplifier 前置放大器Primary flat 主平面Print-circuit board(PCB) 印制电路板Probability 几率Probe 探针Procedure 工艺Process 工艺Projector 投影仪Propagation delay 传输延时Proton 质子Proximity effect 邻近效应Pseudopotential method 赝势法Pump 泵浦Punch through 穿通Pulse triggering/modulating 脉冲触发/调制Pulse Widen Modulator(PWM) 脉冲宽度调制Punchthrough 穿通Push-pull stage 推挽级Q Q值Quality factor 品质因子Quantization 量子化Quantum 量子Quantum efficiency 量子效应Quantum mechanics 量子力学Quasi – Fermi－level 准费米能级Quartz 石英Radar 雷达Radiation conductivity 辐射电导率Radiation damage 辐射损伤Radiation flux density 辐射通量密度Radiation hardening 辐射加固Radiation protection 辐射保护Radiative - recombination 辐照复合Radio 无线电射电射频Radio-frequency RF 射频Raman 拉曼Random 随机Range 测距Radio 比率系数Ray 射线Reactive sputtering source 反应溅射源Real time 实时Receiver 接收机Recombination 复合Recovery diode 恢复二极管Record 记录Recovery time 恢复时间Rectifier 整流器（管）Rectifying contact 整流接触Red light 红光Reference 基准点基准参考点Refractive index 折射率Register 寄存器Regulate 控制调整Relative 相对的Relaxation 驰豫Relaxation lifetime 驰豫时间Relay 中继Reliability 可靠性Remote 远程Repeatability 可重复性Reproduction 重复制造Residual current 剩余电流Resonance 谐振Resin 树脂Resistance 电阻Resistor 电阻器Resistivity 电阻率Regulator 稳压管（器）Resolution 分辨率Response time 响应时间Return signal 回波信号Reverse 反向的Reverse bias 反向偏置Ribbon 光纤带Ridge waveguide 脊形波导Ring laser 环形激光器Rotary wave 旋转波Run 运行Sampling circuit 取样电路Sapphire 蓝宝石（Al2O3）Satellite valley 卫星谷Saturated current range 电流饱和区Scan 扫描Scaled down 按比例缩小Scattering 散射Schematic layout 示意图，简图Schottky 肖特基Schottky barrier 肖特基势垒Schottky contact 肖特基接触Screen 筛选Scribing grid 划片格Secondary flat 次平面Seed crystal 籽晶Segregation 分凝Selectivity 选择性Self aligned 自对准的Self diffusion 自扩散Semiconductor 半导体Semiconductor laser半导体激光器Semiconductor-controlled rectifier 半导体可控硅Sensitivity 灵敏度Sensor 传感器Serial 串行/串联Series inductance 串联电感Settle time 建立时间Sheet resistance 薄层电阻Shaping 成型Shield 屏蔽Shifter 移相器Short circuit 短路Shot noise 散粒噪声Shunt 分流Sidewall capacitance 边墙电容Signal 信号Silica glass 石英玻璃Silicon 硅Silicon carbide 碳化硅Silicon dioxide (SiO2) 二氧化硅Silicon Nitride(Si3N4) 氮化硅Silicon On Insulator 绝缘体上硅Silver whiskers 银须Simple cubic 简立方Simulation 模拟Single crystal 单晶Sink 热沉Sinter 烧结Skin effect 趋肤效应Slot 槽隙Slow wave 慢波Smooth 光滑的Subthreshold 亚阈值的Solar battery/cell 太阳能电池Solid circuit 固体电路Solid Solubility 固溶度Solution 溶液Sonband 子带Source 源极Source follower 源随器Space charge 空间电荷Space Craft 宇宙飞行器Spacing 间距Specific heat(PT) 比热Spectral 光谱Spectrum 光谱(复数)Speed-power product 速度功耗乘积Spherical 球面的Spin 自旋Split 分裂Spontaneous emission 自发发射Spot 斑点Spray 喷涂Spreading resistance 扩展电阻Sputter 溅射Square root 平方根Stability 稳定性Stacking fault 层错Standard 标准的Standing wave 驻波State-of-the-art 最新技术Static characteristic 静态特性Statistical analysis 统计分析Steady state 稳态Step motor 步进式电动机Stimulated emission 受激发射Stimulated recombination 受激复合Stopband 阻带Storage time 存储时间Stress 应力Stripline 带状线Subband 次能带Sublimation 升华Submillimeter 亚毫米波Substrate 衬底Substitutional 替位式的Superconductor 超导(电)体Superlattice 超晶格Supply 电源Surface mound表面安装Surge capacity 浪涌能力Switching time 开关时间Switch 开关Synchronizer 同步器，同步装置Synthetic-aperture 合成孔径System 系统Technical 技术的，工艺的Telecommunication 远距通信，电信Telescope 望远镜Terahertz 太赫兹Terminal 终端Template 模板Temperature 温度Tensor 张量Test 测试试验Thermal activation 热激发Thermal conductivity 热导率Thermal equilibrium 热平衡Thermal Oxidation 热氧化Thermal resistance 热阻Thermal sink 热沉Thermal velocity 热运动Thick- film technique 厚膜技术Thin- film hybrid IC 薄膜混合集成电路Thin-Film Transistor(TFT) 薄膜晶体Three dimension 三维Threshold 阈值Through Silicon Via 硅通孔Thyistor 晶闸管Time resolution 时间分辨率Tolerance 公差T/R module 发射/接收模块Transconductance 跨导Transfer characteristic 转移特性Transfer electron 转移电子Transfer function 传输函数Transient 瞬态的Transistor aging(stress) 晶体管老化Transit time 渡越时间Transition 跃迁Transition-metal silica 过度金属硅化物Transition probability 跃迁几率Transition region 过渡区Transmissivity 透射率Transmitter 发射机Transceiver 收发机Transport 输运Transverse 横向的Trap 陷阱Trapping 俘获Trapped charge 陷阱电荷Travelling wave 行波Trigger 触发Trim 调配调整Triple diffusion 三重扩散Tolerance 容差Tube 管子电子管Tuner 调节器Tunnel(ing) 隧道（穿）Tunnel current 隧道电流Turn - off time 关断时间Ultraviolet 紫外的Ultrabright 超亮的Ultrasonic 超声的Underfilling 下填充Undoped 无掺杂Unijunction 单结的Unipolar 单极的Unit cell 原（元）胞Unity- gain frequency 单位增益频率Unilateral-switch 单向开关Vacancy 空位Vacuum 真空Valence(value) band 价带Value band edge 价带顶Valence bond 价键Vapour phase 汽相Varactor 变容管Variable 可变的Vector 矢量Vertical 垂直的Vibration 振动Visible light 可见光Voltage 电压Volt 伏特Wafer 晶片Watt 瓦Wave guide 波导Wavelength 波长Wave-particle duality 波粒二相性Wear-out 烧毁Wetting 浸润Wideband 宽禁带Wire 引线Wire routing 布线Work function 功函数Worst-case device 最坏情况器件X-ray X射线Yield 成品率Zinc 锌。
Anisotropic diffusionFrom Wikipedia, the free encyclopediaIn image processing and computer vision, anisotropic diffusion, also called Perona–Malik diffusion, is a technique aiming at reducing image noise without removing significant parts of the image content, typically edges, lines or other details that are important for the interpretation of the image.[1][2][3] Anisotropic diffusion resembles the process that creates a scale-space, where an image generates a parameterized family of successively more and more blurred images based on a diffusion process. Each of the resulting images in this family are given as a convolution between the image and a 2D isotropic Gaussian filter, where the width of the filter increases with the parameter. This diffusion process is a linear and space-invariant transformation of the original image. Anisotropic diffusion is a generalization of this diffusion process: it produces a family of parameterized images, but each resulting image is a combination between the original image and a filter that depends on the local content of the original image. As a consequence, anisotropic diffusion is a non-linear and space-variant transformation of the original image.In its original formulation, presented by Perona and Malik in 1987[1], the space-variant filter is in fact isotropic but depends on the image content such that it approximates an impulse function close to edges and other structures that should be preserved in the image over the different levels of the resulting scale-space. This formulation was referred to as anisotropic diffusion by Perona and Malik even though the locally adapted filter is isotropic, but it has also been referred to as inhomogeneous and nonlinear diffusion[4] or Perona-Malik diffusion[5] by other authors. A more general formulation allows the locally adapted filter to be truly anisotropic close to linear structures such as edges or lines: it has an orientation given by the structure such that it is elongated along the structure and narrow across. Such methods are referred to as shape-adapted smoothing[6][7] or coherence enhancing diffusion[8]. As a consequence, the resulting images preserve linear structures while at the same time smoothing is made along these structures. Both these cases can be described by a generalization of the usual diffusion equation where the diffusion coefficient, instead of being a constant scalar, is a function of image position and assumes a matrix (or tensor) value (see structure tensor).Although the resulting family of images can be described as a combination between the original image and space-variant filters, the locally adapted filter and its combination with the image do not have to be realized in practice. Anisotropic diffusion is normally implemented by means of an approximation of the generalized diffusion equation: each new image in the family is computed by applying this equation to the previous image. Consequently, anisotropic diffusion is an iterative process where a relatively simple set of computation are used to compute each successive image in the family and this process is continued until a sufficient degree of smoothing is obtained.Contents1 Formal definition2 Motivation3 Applications4 See also5 External links6 ReferencesFormal definitionFormally, let denote a subset of the plane and be a family of gray scale images, then anisotropic diffusion is defined aswhere ∆ denotes the Laplacian, denotes the gradient, is the divergence operator and c(x,y,t) is the diffusion coefficient. c(x,y,t) controls the rate of diffusion and is usually chosen as a function of the image gradient so as to preserve edges in the image. Pietro Perona and Jitendra Malik pioneered the idea of anisotropic diffusion in 1990 and proposed two functions for the diffusion coefficient:andthe constant K controls the sensitivity to edges and is usually chosen experimentally or as a function of the noise in the image.MotivationLet M denote the manifold of smooth images, then the diffusion equations presented above can be interpreted as the gradient descent equations for the minimization of the energy functional defined bywhere is a real-valued function which we will see is intimately related to the diffusion coefficient. Then for any compactly supported infinitely differentiable test function h, we havewhere the last line follow from multidimensional integration by parts. Letting denote the gradient of E with respect to the inner product evaluated at I, this givesTherefore, the gradient descent equations on the functional E are given byThus by letting c = g' we obtain the anisotropic diffusion equations.ApplicationsAnisotropic diffusion can be used to remove noise from digital images without blurring edges. With a constant diffusion coefficient, the anisotropic diffusion equations reduce to the heat equation which is equivalent to Gaussian blurring. This is ideal for removing noise but also indiscriminately blurs edges too. When the diffusion coefficient is chosen as an edge seeking function, such as in Perona () and Malik, the resulting equations encourage diffusion (hence smoothing) within regions and prohibit it across strong edges. Hence the edges can be preserved while removing noise from the image.Along the same lines as noise removal, anisotropic diffusion can be used in edge detection algorithms. By running the diffusion with an edge seeking diffusion coefficient for a certain number of iterations, the image can be evolved towards a piecewise constant image with the boundaries between the constant components being detected as edges.See alsoBilateral filterEdge detectionEdge-preserving smoothingHeat equationImage noiseNoise reductionScale spaceTotal variation denoisingExternal linksMathematica PeronaMalikFilter (/mathematica/ref/PeronaMalikFilter.html) function.IDL nonlinear anisotropic diffusion package(edge enhancing and coherence enhancing): [1](/fac/sci/physics/research/cfsa/people/yuan/studytracking/computation/idllib/)References^ a b Pietro Perona and Jitendra Malik (November 1987). "Scale-space and edge detection using anisotropic 1.diffusion". Proceedings of IEEE Computer Society Workshop on Computer Vision,. pp. 16–22.2.^ Pietro Perona and Jitendra Malik (July 1990). "Scale-space and edge detection using anisotropic diffusion"(/Xplore/login.jsp?url=http%3A%2F%%2Fiel1%2F34%2F2032%2F00056205.pdf%3Farnumber%3D56205&authDecision=-203) .IEEE Transactions on Pattern Analysis and Machine Intelligence,12 (7): 629–639. doi:10.1109/34.56205(/10.1109%2F34.56205) . /Xplore/login.jsp?url=http%3A%2F%%2Fiel1%2F34%2F2032%2F00056205.pdf%3Farnumber%3D56205&authDecision=-203.3.^ Guillermo Sapiro (2001). Geometric partial differential equations and image analysis ( /?id=4z5cCjFxIBoC&pg=PA223&dq=perona-malik+anisotropic-diffusion) . Cambridge University Press. p. 223.ISBN 9780521790758. /?id=4z5cCjFxIBoC&pg=PA223&dq=perona-malik+anisotropic-diffusion.4.^ Joachim Weickert (July 1997). "A Review of Nonlinear Diffusion Filtering". Scale-Space Theory in Computer Vision. Springer, LNCS 1252. pp. 1–28. doi:10.1007/3-540-63167-4 (/10.1007%2F3-540-63167-4) .^ Bernd Jähne and Horst Haußecker (2000). Computer Vision and Applications, A Guide for Students and 5.Practitioners. Academic Press. ISBN 0-13-085198-1.6.^ Lindeberg, T., Scale-Space Theory in Computer Vision, Kluwer Academic Publishers, 1994(http://www.csc.kth.se/~tony/book.html) , ISBN 0-7923-9418-6, (chapter 15).7.^ Andres Almansa and Tony Lindeberg (2000). "Fingerprint Enhancement by Shape Adaptation of Scale-Space Operators with Automatic Scale-Selection" (http://www.csc.kth.se/cvap/abstracts/cvap226.html) . IEEETransactions on Image Processing9 (12): 2027–2042. doi:10.1109/83.887971 (/10.1109%2F83.887971) . http://www.csc.kth.se/cvap/abstracts/cvap226.html.8.^ Weickert, J Anisotropic diffusion in image processing, Teuber V erlag, Stuttgart, 1998. (http://www.mia.uni-saarland.de/weickert/book.html)Retrieved from "/w/index.php?title=Anisotropic_diffusion&oldid=455706785" Categories: Image processing Computer visionThis page was last modified on 15 October 2011 at 16:22.Text is available under the Creative Commons Attribution-ShareAlike License; additional terms may apply. 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微电子专业英语词汇 IMB standardization office【IMB 5AB- IMBK 08- IMB 2C】Abrupt junction 突变结['brpt] 突然的；Accelerated testing 加速实验[k'selreitid]Acceptor 受主 Acceptor atom 受主原子['tm] n. 原子Accumulation [,kju:mju'lein]积累,堆积Accumulating contact(n. 接触，联系)积累接触Accumulation region['ri:dn]地区积累区 Accumulation layer['lei] 层积累层Active region 有源区['ktiv]积极的,有源的 Active component [km'punnt]元件有源元Active device 有源器件 Activation 激活Activation energy 激活能 Active region 有源（放大）区Admittance [d'mitns]导纳 Allowed band [b?nd]带允带Alloy-junction device ['l]合金结器件 Aluminum(Aluminium) ['lju:minm]铝Aluminum – oxide ['ksaid]铝氧化物 Aluminum passivation [psi'vein]钝化铝钝化Ambipolar [,mbi'pul]双极的 Ambient temperature ['mbint]环境温度Amorphous ['m:fs]无定形的，非晶体的 Amplifier ['mplifai]功放扩音器放大器Analogue(Analog) ['nlɡ] comparator ['kmpreit]模拟比较器 Angstrom ['strm]埃Anneal ['ni:l]退火 Anisotropic [n,aisu'trpik]各向异性的Anode ['nud]阳极 Arsenic ['ɑ:s?nik (AS) 砷Auger [':ɡ]俄歇 Auger process 俄歇过程Avalanche ['vlɑ:nt]雪崩 Avalanche breakdown(击穿) 雪崩击穿Avalanche excitation [,eksi'tei?n](激发)雪崩激发Background(背景,本底,基底) carrier 本底载流子 Background doping 本底掺杂Backward ['bkwd]反向 Backward bias ['bai?s](偏置,)偏爱反向偏置Ballasting ['blst] resistor 整流电阻 Ball bond [b?nd](结合)球形键合Band 能带 Band gap [ɡ?p](间隙)能带间隙Barrier 势垒 Barrier layer 势垒层Barrier ['bri] width 势垒宽度 Base 基极Base contact 基区接触 Base stretching 基区扩展效应Base transit(运输)time基区渡越时间 Base transport efficiency [i'fi?nsi](效率)基区输运系数Base-width modulation [,mdju'lein(调制)基区宽度调制 Basis vector ['vekt]矢量基矢Bias 偏置 Bilateral [,bai'ltrl] switch 双向开关Binary ['bain?ri]code(代码)二进制代码Binary compound semiconductor二元化合物半导体Bipolar [bai'pul]双极性的 Bipolar Junction Transistor (晶体管)(BJT)双极晶体管Bloch [bl?k]布洛赫 Blocking ['blki]（截止，阻塞） band 阻挡能带Blocking contact 阻挡接触 Body（身体，主题） - centered（居中的）体心立方Body-centred cubic ['kju:bik]立方体structure ['strkt]结构体立心结构 Boltzmann 波尔兹曼Bond 键、键合 Bonding electron 价电子Bonding pad 键合点 Bootstrap circuit ['s:kit]电路自举电路Bootstrapped emitter [i'mit]发射器 follower（追随者）自举射极跟随器 Boron ['b:rn]硼Borosilicate [,b:ru'silikit]硼硅酸盐 glass 硼硅玻璃 Boundary condition 边界条件Bound electron 束缚电子 Breadboard 模拟板、实验板Break down 击穿 Break over 转折Brillouin 布里渊 Brillouin zone 布里渊区Built-in 内建的 Build-in electric field 内建电场Bulk [b?lk]体/体内 Bulk absorption 体吸收Bulk generation 体产生 Bulk recombination [,ri:kmbi'nein]体复合Burn - in 老化 Burn out 烧毁Buried ['berid]埋葬的 channel埋沟 Buried diffusion扩散 region 隐埋扩散区Can 外壳 Capacitance[k'p?st()ns]电容Capture俘获 cross section 俘获截面 Capture carrier 俘获载流子Carrier 载流子、载波 Carry bit 进位位Carry-in bit 进位输入 Carry-out bit 进位输出Cascade [k?s'keid]级联，串联级联 Case 管壳Cathode['kθud]阴极 Center 中心Ceramic [si'r?mik]陶瓷（的） Channel['tnl] (频道)沟道Channel breakdown 沟道击穿 Channel current 沟道电流Channel doping 沟道掺杂 Channel shortening 沟道缩短Channel width 沟道宽度 Characteristic impedance[im'pi:d?ns]特征阻抗Charge (控告)电荷,充电 Charge-compensation[,kmpen'sein](补偿) effects 电荷补偿效应Charge conservation(保存,保持) 电荷守恒Charge neutrality[nju'trlt](中性) condition电中性条件Charge drive/exchange/sharing/transfer/storage 电荷驱动/交换/共享/转移/存储Chemmical etching[nju'trlt]化学腐蚀法 Chemically-Polish['pl]（磨光）化学抛光Chemmically-Mechanically [m'knkl]（机械地）Polish (CMP) 化学机械抛光 Chip 芯片Chip yield（产量）芯片成品率 Clamped 箝位Clamping diode 箝位二极管 Cleavage['klivd] plane（平面）解理面Clock rate（比率）时钟频率 Clock generator 时钟发生器Clock flip-flop（触发器）时钟触发器 Close-packed structure（构造）密堆积结构Close-loop（环） gain（获利，增加）闭环增益 Collector 集电极Collision[k'l()n]（冲突）碰撞 Compensated（补偿） OP-AMP 补偿运放Common-base/collector/emitter connection 共基极/集电极/发射极连接Common-gate/drain/source connection 共栅/漏/源连接Common-mode gain 共模增益 Common-mode input 共模输入Common-mode rejection（抑制，拒绝）ratio (CMRR) 共模抑制比Compatibility[km,pt'blt]兼容性 Compensation 补偿Compensated impurities（杂质）补偿杂质 Compensated semiconductor 补偿半导体Complementary（补足的） Darlington circuit（电路，回路）互补达林顿电路Complementary Metal-Oxide-Semiconductor Field-Effect-Transistor（晶体管）(CMOS) 互补金属氧化物半导体场效应晶体管Complementary error function（功能，函数）余误差函数Computer-aided【辅助的】design (CAD)/test(CAT)/manufacture(CAM)Compound['kmpand] Semiconductor 化合物半导体 Conductance[kn'dkt()ns]电导Conduction（传导band (edge) 导带(底) Conduction level/state 导带态Conductor 导体 Conductivity 电导率Configuration（配置）组态 Conlomb['kulm]库仑Conpled Configuration Devices 结构组态 Constants（常量，常数）物理常数Constant energy surface 等能面 Constant-source diffusion（扩散，传播）恒定源扩散Contact（联系，接触）接触 Contamination[kn,tm'nen]玷污Continuity[,knt'njut]（连续性）equation（方程式，等式）连续性方程Contact hole孔接触孔Contact potential（潜能，潜在的）接触电势 Continuity condition 连续性条件Contra['kntr]相反 doping 反掺杂 Controlled 受控的Converter[kn'vt]（converter转变，转换）转换器 Conveyer[kn've]传输器Copper（铜） interconnection[,ntk'nkn]（互联） system 铜互连系统 Couping 耦合Covalent[k'vel()nt]（共价的）共阶的 Crossover 跨交Critical （批评的）临界的 Crossunder 穿交Crucible['krusb()l]坩埚Crystal defect缺陷/face/orientation/lattice 晶体缺陷/晶面/晶向/晶格Current density（密度）电流密度 Curvature'kvt曲率Cut off 截止Current drift（漂移）/dirve/sharing电流漂移/驱动/共享Current Sense（感觉，检测）电流取样 Curvature 弯曲Custom（风俗，习惯，定制的integrated circuit 定制集成电路 Cylindrical 柱面的Czochralshicrystal 直立单晶crystal（晶体，单晶）Czochralski technique 切克劳斯基技术（Cz 法直拉晶体 J）Dangling ['d?g()l;bonds 悬挂键 Dark current 暗电流Dead time 空载时间 Debye length 德拜长度德布洛意 Decderate 减速Decibel ['des?bel] (dB) 分贝 Decode 译码Deep acceptor level 深受主能级 Deep donor['dn（捐赠者level 深施主能级Deep impurity（杂质，不存，不洁）level 深度杂质能级 Deep trap 深陷阱Defeat 缺陷Degenerate semiconductor 简并半导体 Degeneracy 简并度Degradation[,degr'de()n]退化 Degree Celsius(centigrade) /Kelvin 摄氏/开氏温度Delay 延迟 Density 密度Density of states 态密度 Depletion 耗尽Depletion approximation 耗尽近似 Depletion contact 耗尽接触Depletion depth 耗尽深度 Depletion effect 耗尽效应Depletion layer 耗尽层 Depletion MOS 耗尽 MOSDepletion region 耗尽区 Deposited film(电影，薄膜) 淀积薄膜Deposition process 淀积工艺 Design rules 设计规则Die 芯片（复数 dice） Diode 二极管Dielectric 介电的 Dielectric isolation（隔离。
附录A：外文文献An Effective Automatic Image Enhancement MethodABSTRACT Otsu method is proper to deal with two conditions: (1) two or more classes with distintive gray-values respectively; (2) classes without distinctive gray-values, but with similar areas. However, when the gray-value differences among classes are not so distinct, and the object is small relative to backgroud, the separabilities among classes are insufficient. In order to overcome the above problem, this paper presents an improved spatial low-pass filter with a parameter and presents an unsupervised method of automatic parameter selection for image enhancement based on Otsu method. This method combines image enhancement with image segmentation as one procedure through a discriminant criterion. The optimal parameter of the filter is selected by the discriminant criterion given to maximize the separability between object and background. The optimal threshold for image segmentation is computed simultaneously. The method is used to detect the surface defect of container. Experiments illustrate the validity of the method.KEYWORDS image processing; automated image enhancement; image segmentation; automated visual inspection1 IntroductionAutomated visual inspection of cracked container (A VICC) is a practical application of machine vision technology. To realize our goal, four essential operations must be dealt with –image preprocessing, object detection, feature description and final cracked object classification. Image enhancement is to provide a result more suitable than original image for specific applications. In this paper the objective of enhancement, followed by image segmentation, is to obtain an image with a higher content about the object interesting with less content about noise and background. Gonzalez [1] discusses that image enhancement approaches fall into two main categories, in that spatial domain and frequency domain methods. Burton [2] applies image averaging technique to face recognition system, making it able to recognise familiar faces easily across large variations in image quality. Centeno [3] proposes an adaptive image enhancement algorithm, which reverse the processing order of image enhancement and segmentation in order to avoid sharpening noise and blurring borders. Munteanu [4] applies artificial intelligence technology to image enhancement providing denoising function. In addition to spatial domain methods, frequency domain processing techniques are based on modifying the Fourier transform of an image. Bakir [5] discusses image enhancement used for medical image processing in frequency space. Besides, Wang [6] presents a global multiscale analysis of images based on Haar wavelet technique for image denoising. Recently, Agaian [7] proposes image enhancement methods based on the properties of the logarithmic transform domain histogram and histogram equalization. We apply spatial processing here in order to guarantee the real-time and sufficient accuracy property of the system.Segmentation is discussed in [8]. The most simplest, represented by Otsu [9], is method using only the gray level histogram analysis to maximize the separability ofthe resultant classes. Kuntimad [10] describes a method for segmenting digital images using pulse coupled neural networks (PCNN). Salzenstein [11] deals with a comparison of recent statistical models on fuzzy Markov random fields and chains for multispectral image segmentation. Due to ill-defined, there is no unique segmentation of an image. Evaluation of segmentation algorithms thus far has been largely subjective. Ranjith [12] demonstrates how a recently proposed measureof similarity can be used to perform a quantitative comparison among image segmentation algorithms.In this paper, we present an improved spatial low-pass filter with a tunable parameter in the mask making all elements no longer sum to unity. The optimal parameter for the filter can be determined by the improved discriminant criterion based on the one mentioned in [9]. Convolving images with this mask, the background uninteresting can be removed easily leaving the object intact to some extent. The remainder of the paper is organized as follows: Sect.2 presents how to enhance an input image in theory and presents the algorithm. Sect.3 illustrates the validity of the method in Sect.2. Finally, conclusion and discussion are presented in Sect.4.2Image Enhancement2.1 Analysis of Prior KnowledgeThe preprocessing quality influences the latter work directly, in that, feature description. Therefore, analysis for the characteristics related to input images should be presented. A standard image of cracked container is shown as Fig.1 (a). From the image, we see the cracked part occupies small region. Much noise, such as rust, shadow, smear etc, appears within the background. At a coarse glance, however, we find gray level of the hole is less than the other parts distinctly. Further study shows gray level of pixels, around the edge of the hole, is the minimal. Fig.1(b) displays the histogram of Fig.1(a) and edge of the hole is marked.Fig.1 (a) is a standard gray level image of a cracked container(b) is the histogram of Fig.1 (a), indicating gray level region of the hole’s edge.2.2 FormulationThis section discusses the principal content in the paper. Traditional spatial filter uses a 3×3 mask, the elements of which sum to unity, to convolve with the input image. This method can deal with some cases shown in equation (1):=+（1）(,)(,)(,)G x y I x y N x ywhere, I is image interested, N is Gaussian white noise, (x,y) denotes each pair ofcoordinates. N can be deliminated by blurring G . Our objective, however, is todeliminate not only white noise, but any other background uninteresting. Thusequation (1) is improved by equation (2):'(,)'(,)'(,)G x y I x y N x y =+ （2）where, I' is the object, N' consists of white noise and the other parts except I'.Fig.2 (c) displays an improved mask with a parameter Para. We will later illustratethat tuning Para properly is to facilitate object segmentation. The smoothing functionused is shown in equation (3):1111(,)'(,)(,)f m n I x y G x y F x m y n =-=-=++∑∑ （3）where, F(x,y) denotes the smoothing filter, in that, the mask shown as Fig.2 (c).Now, we only consider gray-level images, and define Mg as the maximum graylevel of an image. Then the following equations are set to distinguish the object ofinterest and the non-object :',,f f g fg f g I i f I M I M i f I M <⎧⎪=⎨ ≥⎪⎩ （4） In essence, convolution operator is a low-pass filtering process, which blurs animage by sliding a mask through the image and leaves the filtering response at theposition corresponding to central location of the mask. One question occurs that, whynot enhance value of each pixel by the same scale directly for the distinct gray levelsbetween the object and background. The reason is that it doesn’t consider therelationship of adjacent pixels. When individual noise point occur, enhancing its grayvalue directly will preserve the noise point. Experiments illustrate the latter methodwill leave lots of noise points can’t be removed, but the former method will not.Now, we will search the optimal parameter Para so as to maximize the separabilitybetween object and background. Let a given image be represented in L gray levels.The number of pixels at level i is denoted by ni and the total number of pixels by N.The probability of each level is denoted by Pi as follow [9]:1/,0,1li i i i i P n N P P ==≥=∑ （5）Suppose that we partition the pixels into two classes C0 and C1 (object andbackground) by a threshold at level k; C0 denotes pixels with levels [1, … , k], andC1 denotes pixels with levels [k+1, … , L]. Then the probabilities of classoccurrence w0,w1 and the class mean levels u0,u1 respectively,are given by01==ni i P k =ωω()∑ （6）11==1-ni i k P k =+ωω()∑ （7）001=()/=/k i i iP k k =μωμ()ω()∑ （8）111=()/=[/[1-Li i iP k k τ=μωμ-μ()]ω()]∑ （9）1=Li i iP τ=μ∑ （10）220001=[()]/K i i i p σ=-μω∑ （11） 221111=[()]/K i i i p σ=-μω∑ （12） The procedure of obtaining optimal para is based on obtaining optimal thresholdfor every filtered image. The optimal threshold is determined by maximizing theseparability between object and background using the following discriminant criterionmeasure as mentioned in [9] :22=/B T σση （13）where222200110110()()()B T T σ=ωμ-μ+ωμ-μ=ωωμ-μ （14）2B σand 2T σare the between class variance and the total variance of levels,respectively.221=()LTT i i i p σ=-μ∑ （15） The optimal threshold k* that maximizes n is selected in the following sequentialsearch by using equation (5)-(14):*1()max ()k Lk k ≤<η=η （16） Equation (16) is a discriminant criterion to select the gray level to maximize theseparability between object and background for a given picture. In this paper, aparameter Para is introduced, so the equations (6)~(9), (11)~(14), (16) isparameterized by Para and k and equations (10), (15) is parameterized by Para.Equation (13) can be rewritten as:22(,)/(,)B T para k para k σση= （17）Where 2T σ is not a constant any more and is not negligible, but somecomputation reduction can be operated on 2(,)Bpara k σand 2(,)T para k σ Here, what we want to acquire is the proper filtered picture including vividobject by searching parameter Para, the discriminant criterion used is improved asfollow :**1max()k Lk ≤<η= （18） In the above representation, parameter Para plays an important role, becauseoptimal Para makes the separability between object and background maximal, andmake Otsu segmentation method effective to segment small object from largebackground without distinctive gray-value between them, which can be observed laterfrom image histogram after image enhancement2.3 Existence Discussion of Para and k*The problem above is reduced to search for a threshold k* under the condition ofPara which maximizes the discriminant criterion in equation (18). The conditiondiscussed is the image with two class at least. Subsequently, the following two casesdon’t occur, in that,(1) w0 or w1 is zero originally without setting Para,in which thereis only one class;(2) w0 or w1 is zero with certain increasing Para,in which there isalso one class finally;The above two cases are decribed as:()()()()()A {Para,k |Para,k Para,k 0,1/2n 1*2n 1Para ,0k L 1}==++<<+<<-⎡⎤⎣⎦The case concerned is A,Thus,there is certain Para with proper k to makediscriminant criterion maximal.3 ExperimentsThis paper aims at monochrome images. First, the initial values are presented.Several values should be set: Para = 1/9 (beginning with an averaging filter for 3*3mask),Mg=L=256 (the range of gray-level, shown in equation (4) and (5)). Using thealgorithm above, we can compute each value of discriminant criterion (k*) computed,in that image I 'f that is most proper to be segmented is obtained. Here, we takeimages of cracked container for example. Fig.3 and Fig.4 show the experimentalprocess, in which the first rows show the filtered pictures, the second rows show thecorresponding histograms and the third rows show curves of correspondingdiscriminant criterion. The last columns are the optimal results of image enhancement,from which we can observe all the noise such as rust, shadow, smear, etc is almostremoved, leaving the cracked parts intact. Tab.1 and Tab.2 present the varying courseof corresponding to each parameter Para. Subsequently, the optimal Para is obtainby comparing all n(k*) computed, in that image I 'f that is most proper to besegmented is obtained. Here, we take images of cracked container for example. Fig.3and Fig.4 show the experimental process, in which the first rows show the filteredpictures, the second rows show the corresponding histograms and the third rows show curves of corresponding discriminant criterion. The last columns are the optimal results of image enhancement, from which we can observe all the noise such as rust, shadow, smear, etc is almost removed, leaving the cracked parts intact. Tab.1 and Tab.2 present the varying course of n(k*) along with Para respectively in terms of Fig.3 and Fig.4. When Para increases to 5/9 for both examples, n(k*) will reach their maximum and the most proper filtered image are obtained. When Para continue to increase, n(k*) will decrease and the integrity of the crack part will be destroyed seriously as last two columns in Fig.5.4ConclusionThis paper is to overcome the disadvantage of Otsu method in dealing with the condition: when the gray-value differences among classes are not so distinct, and the object is small relative to backgroud, the separabilities among classes are not sufficient. This paper proposes an effective image enhancement method in spatial domain. We define all the non-objects as noise, which urges us to design an effective filter to remove noise at one time. We propose an improved mask, according to the characteristic of gray level of cracked container, to make gray value of non-objectsabove a threshold and leave the object below it. The filtered image, most proper to be segmented, is computed automaticly by using the improved discriminant criterion in terms of the principle of maximize the separability between object interesting and background uninteresting. After the proposed image enhancement, subsequent operations can be carried on easily. Experiments illustrate the proposed method is valid and effective.译文：一种有效地自动图像增强方法1.简介基于集装箱裂纹的自动视觉检测(A VICC)是一个应用机器视觉技术。
半导体微电子专业词汇中英文对照Accelerated testing 加速实验Acceptor 受主Acceptor atom 受主原子Accumulation 积累、堆积Accumulating contact 积累接触Accumulation region 积累区Accumulation layer 积累层Acoustic Surface Wave 声表面波Active region 有源区Active component 有源元Active device 有源器件Activation 激活Activation energy 激活能Active region 有源（放大）区A/D conversion 模拟-数字转换Adhesives 粘接剂Admittance 导纳Aging 老化Airborne 空载Allowed band 允带allowance 容限，公差Alloy-junction device合金结器件Aluminum(Aluminum) 铝Aluminum – oxide 铝氧化物Aluminum Nitride 氮化铝Aluminum passivation 铝钝化Ambipolar 双极的Ambient temperature 环境温度A M light 振幅调制光，调幅光amplitude limiter 限幅器Amorphous 无定形的，非晶体的Amplifier 功放放大器Analogue(Analog) comparator 模拟比较器Angstrom 埃Anneal 退火Anisotropic 各向异性的Anode 阳极Antenna 天线Aperture 孔径Arsenide (As) 砷Array 阵列Atomic 原子的Atom Clock 原子钟Attenuation 衰减Audio 声频Auger 俄歇Automatic 自动的Automotive 汽车的Availability 实用性Avalanche 雪崩Avalanche breakdown 雪崩击穿Avalanche excitation雪崩激发Background carrier 本底载流子Background doping 本底掺杂Backward 反向Backward bias 反向偏置Ball bond 球形键合Band 能带Band gap 能带间隙Bandwidth 带宽Bar 巴条发光条Barrier 势垒Barrier layer 势垒层Barrier width 势垒宽度Base 基极Base contact 基区接触Base stretching 基区扩展效应Base transit time 基区渡越时间Base transport efficiency基区输运系数Base-width modulation基区宽度调制Batch 批次Battery 电池Beam 束光束电子束Bench 工作台Bias 偏置Bilateral switch 双向开关Binary code 二进制代码Binary compound semiconductor 二元化合物半导体Bipolar 双极性的Bipolar Junction Transistor (BJT)双极晶体管Bit 位比特Blocking band 阻带Body - centered 体心立方Body-centred cubic structure 体立心结构Boltzmann 波尔兹曼Bond 键、键合Bonding electron 价电子Bonding pad 键合点Boron 硼Borosilicate glass 硼硅玻璃Bottom-up 由下而上的Boundary condition 边界条件Bound electron 束缚电子Bragg effect 布拉格效应Breadboard 模拟板、实验板Break down 击穿Break over 转折Brillouin 布里渊 FBrillouin zone 布里渊区Buffer 缓冲器Built-in 内建的Build-in electric field 内建电场Bulk 体/体内Bulk absorption 体吸收Bulk generation 体产生Bulk recombination 体复合Burn-in 老化Burn out 烧毁Buried channel 埋沟Buried diffusion region 隐埋扩散区Bus 总线Calibration 校准，检定，定标、刻度，分度Capacitance 电容Capture cross section 俘获截面Capture carrier 俘获载流子Carbon dioxide (CO2) 二氧化碳Carrier 载流子、载波Carry bit 进位位Cascade 级联Case 管壳Cathode 阴极Cavity 腔体Center 中心Ceramic 陶瓷（的）Channel 沟道Channel breakdown 沟道击穿Channel current 沟道电流Channel doping 沟道掺杂Channel shortening 沟道缩短Channel width 沟道宽度Characteristic impedance 特征阻抗Charge 电荷、充电Charge-compensation effects 电荷补偿效应Charge conservation 电荷守恒Charge drive/exchange/sharing/transfer/storage 电荷驱动/交换/共享/转移/存储Chemical etching 化学腐蚀法Chemically-Polish 化学抛光Chemically-Mechanically Polish (CMP) 化学机械抛光Chemical vapor deposition (cvd)化学汽相淀积Chip 芯片Chip yield 芯片成品率Circuit 电路Clamped 箝位Clamping diode 箝位二极管Cleavage plane 解理面Clean 清洗Clock rate 时钟频率Clock generator 时钟发生器Clock flip-flop 时钟触发器Close-loop gain 闭环增益Coating 涂覆涂层Coefficient of thermal expansion 热膨胀系数Coherency 相干性Collector 集电极Collision 碰撞Compensated OP-AMP 补偿运放Common-base/collector/emitter connection 共基极/集电极/发射极连接Common-gate/drain/source connection 共栅/漏/源连接Common-mode gain 共模增益Common-mode input 共模输入Common-mode rejection ratio (CMRR) 共模抑制比Communication 通信Compact 致密的Compatibility 兼容性Compensation 补偿Compensated impurities 补偿杂质Compensated semiconductor 补偿半导体Complementary Darlington circuit 互补达林顿电路Complementary Metal-Oxide-SemiconductorField-Effect-Transistor(CMOS) 互补金属氧化物半导体场效应晶体管Computer-aided design(CAD)/test(CAT)/manufacture(CAM) 计算机辅助设计/ 测试 /制造Component 元件Compound Semiconductor 化合物半导体Conductance 电导Conduction band (edge) 导带(底)Conduction level/state 导带态Conductor 导体Conductivity 电导率Configuration 结构Conlomb 库仑Constants 物理常数Constant energy surface 等能面Constant-source diffusion恒定源扩散Contact 接触Continuous wave 连续波Continuity equation 连续性方程Contact hole 接触孔Contact potential 接触电势Controlled 受控的Converter 转换器Conveyer 传输器Cooling 冷却Copper interconnection system 铜互连系统Corrosion 腐蚀Coupling 耦合Covalent 共阶的Crossover 交叉Critical 临界的Cross-section 横断面Crucible坩埚Cryogenic cooling system 冷却系统Crystal defect/face/orientation/lattice 晶体缺陷/晶面/晶向/晶格Cubic crystal system 立方晶系Current density 电流密度Curvature 曲率Current drift/drive/sharing 电流漂移/驱动/共享Current Sense 电流取样Curve 曲线Custom integrated circuit 定制集成电路Cut off 截止Cylindrical 柱面的Czochralshicrystal 直立单晶Czochralski technique 切克劳斯基技术（Cz法直拉晶体J）)Dangling bonds 悬挂键Dark current 暗电流Dead time 空载时间Decade 十进制Decibel (dB) 分贝Decode 解码Deep acceptor level 深受主能级Deep donor level 深施主能级Deep energy level 深能级Deep impurity level 深度杂质能级Deep trap 深陷阱Defeat 缺陷Degenerate semiconductor 简并半导体Degeneracy 简并度Degradation 退化Degree Celsius(centigrade) /Kelvin 摄氏/开氏温度Delay 延迟Density 密度Density of states 态密度Depletion 耗尽Depletion approximation 耗尽近似Depletion contact 耗尽接触Depletion depth 耗尽深度Depletion effect 耗尽效应Depletion layer 耗尽层Depletion MOS 耗尽MOS Depletion region 耗尽区Deposited film 淀积薄膜Deposition process 淀积工艺Design rules 设计规则Detector 探测器Developer 显影剂Diamond 金刚石Die 芯片（复数dice）Diode 二极管Dielectric Constant 介电常数Dielectric isolation 介质隔离Difference-mode input 差模输入Differential amplifier 差分放大器Differential capacitance 微分电容Diffraction 衍射Diffusion 扩散Diffusion coefficient 扩散系数Diffusion constant 扩散常数Diffusivity 扩散率Diffusion capacitance/barrier/current/furnace 扩散电容/势垒/电流/炉Digital circuit 数字电路Dimension (1)尺寸(2)量钢(3)维，度Diode 二极管Dipole domain 偶极畴Dipole layer 偶极层Direct-coupling 直接耦合Direct-gap semiconductor 直接带隙半导体Direct transition 直接跃迁Directional antenna 定向天线Discharge 放电Discrete component 分立元件Disorder 无序的Display 显示器Dissipation 耗散Dissolution 溶解Distribution 分布Distributed capacitance 分布电容Distributed model 分布模型Displacement 位移Dislocation 位错Domain 畴Donor 施主Donor exhaustion 施主耗尽Dopant 掺杂剂Doped semiconductor 掺杂半导体Doping concentration 掺杂浓度Dose 剂量Double-diffusive MOS(DMOS)双扩散MOS Drift 漂移Drift field 漂移电场Drift mobility 迁移率Dry etching 干法腐蚀Dry/wet oxidation 干/湿法氧化Dose 剂量Dual-polarization 双偏振，双极化Duty cycle 工作周期Dual-in-line package （DIP）双列直插式封装Dynamics 动态Dynamic characteristics 动态属性Dynamic impedance 动态阻抗Early effect 厄利效应Early failure 早期失效Effect 效应Effective mass 有效质量Electric Erase Programmable Read Only Memory(E2PROM) 电可擦除只读存储器Electrode 电极Electromigration 电迁移Electron affinity 电子亲和势Electron-beam 电子束Electroluminescence 电致发光Electron gas 电子气Electron trapping center 电子俘获中心Electron Volt (eV) 电子伏Electro-optical 光电的Electrostatic 静电的Element 元素/元件/配件Elemental semiconductor 元素半导体Ellipse 椭圆Emitter 发射极Emitter-coupled logic 发射极耦合逻辑Emitter-coupled pair 发射极耦合对Emitter follower 射随器Empty band 空带Emitter crowding effect 发射极集边（拥挤）效应Endurance test =life test 寿命测试Energy state 能态Energy momentum diagram 能量-动量(E-K)图Enhancement mode 增强型模式Enhancement MOS 增强性MOSEnteric (低)共溶的Environmental test 环境测试Epitaxial 外延的Epitaxial layer 外延层Epitaxial slice 外延片Epoxy 环氧的Equivalent circuit 等效电路Equilibrium majority /minority carriers 平衡多数/少数载流子Equipment 设备Erasable Programmable ROM (EPROM)可搽取（编程）存储器Erbium laser 掺铒激光器Error function complement 余误差函数Etch 刻蚀Etchant 刻蚀剂Etching mask 抗蚀剂掩模Excess carrier 过剩载流子Excitation energy 激发能Excited state 激发态Exciton 激子Exponential 指数的Extrapolation 外推法Extrinsic 非本征的Extrinsic semiconductor 杂质半导体Fabry-Perot amplifier 法布里-珀罗放大器Face - centered 面心立方Fall time 下降时间Fan-in 扇入Fan-out 扇出Fast recovery 快恢复Fast surface states 快表面态Feedback 反馈Fermi level 费米能级Femi potential 费米势Fiber optic 光纤Field effect transistor 场效应晶体管Field oxide 场氧化层Figure of merit 品质因数Filter 滤波器Filled band 满带Film 薄膜Fine pitch 细节距Flash memory 闪存存储器Flat band 平带Flat pack 扁平封装Flatness 平整度Flexible 柔性的Flicker noise 闪烁（变）噪声Flip-chip 倒装芯片Flip- flop toggle 触发器翻转Floating gate 浮栅Fluoride etch 氟化氢刻蚀Focal plane 焦平面Forbidden band 禁带Formulation 列式，表达Forward bias 正向偏置Forward blocking /conducting 正向阻断/导通Free electron 自由电子Frequency deviation noise 频率漂移噪声Frequency response 频率响应Function 函数Gain 增益Gallium-Arsenide(GaAs) 砷化镓Gallium Nitride 氮化镓Gate 门、栅、控制极Gate oxide 栅氧化层Gate width 栅宽Gauss（ian）高斯Gaussian distribution profile 高斯掺杂分布Generation-recombination 产生-复合Geometries 几何尺寸Germanium(Ge) 锗Gold 金Graded 缓变的Graded (gradual) channel 缓变沟道Graded junction 缓变结Grain 晶粒Gradient 梯度Graphene 石墨烯Grating 光栅Green laser 绿光激光器Ground 接地Grown junction 生长结Guard ring 保护环Guide wave 导波波导Gunn - effect 狄氏效应Gyroscope 陀螺仪Hardened device 辐射加固器件Harmonics 谐波Heat diffusion 热扩散Heat sink 散热器、热沉Heavy/light hole band 重/轻空穴带Hell - effect 霍尔效应Hertz 赫兹Heterojunction 异质结Heterojunction structure 异质结结构Heterojunction Bipolar Transistor（HBT）异质结双极型晶体High field property 高场特性High-performance MOS(H-MOS)高性能MOS器件High power 大功率Hole 空穴Homojunction 同质结Horizontal epitaxial reactor 卧式外延反应器Hot carrier 热载流子Hybrid integration 混合集成Illumination (1)照明(2)照明学Image - force 镜象力Impact ionization 碰撞电离Impedance 阻抗Imperfect structure 不完整结构Implantation dose 注入剂量Implanted ion 注入离子Impurity 杂质Impurity scattering 杂志散射Inch 英寸Incremental resistance 电阻增量（微分电阻）In-contact mask 接触式掩模Index of refraction 折射率Indium 铟Indium tin oxide (ITO) 铟锡氧化物Inductance 电感Induced channel 感应沟道Infrared 红外的Injection 注入Input power 输入功率Insertion loss 插入损耗Insulator 绝缘体Insulated Gate FET(IGFET) 绝缘栅FET Integrated injection logic 集成注入逻辑Integration 集成、积分Integrated Circuit 集成电路Interconnection 互连Interconnection time delay 互连延时Interdigitated structure 交互式结构Interface 界面Interference 干涉International system of unions 国际单位制Internally scattering 谷间散射Interpolation 内插法Intrinsic 本征的Intrinsic semiconductor 本征半导体Inverse operation 反向工作Inversion 反型Inverter 倒相器Ion 离子Ion beam 离子束Ion etching 离子刻蚀Ion implantation 离子注入Ionization 电离Ionization energy 电离能Irradiation 辐照Isolation land 隔离岛Isotropic 各向同性Junction FET(JFET) 结型场效应管Junction isolation 结隔离Junction spacing 结间距Junction side-wall 结侧壁Laser 激光器Laser diode 激光二极管Latch up 闭锁Lateral 横向的Lattice 晶格Layout 版图Lattice binding/cell/constant/defect/distortion 晶格结合力/晶胞/晶格/晶格常熟/晶格缺陷/晶格畸变Lead 铅Leakage current （泄）漏电流Life time 寿命linearity 线性度Linked bond 共价键Liquid Nitrogen 液氮Liquid－phase epitaxial growth technique 液相外延生长技术Lithography 光刻Light Emitting Diode(LED) 发光二极管Linearity 线性化Liquid 液体Lock in 锁定Longitudinal 纵向的Long life 长寿命Lumped model 集总模型Magnetic 磁的Majority carrier 多数载流子Mask 掩膜板，光刻板Mask level 掩模序号Mask set 掩模组Mass - action law 质量守恒定律Master-slave D flip-flop 主从D 触发器Matching 匹配Material 材料Maxwell 麦克斯韦Mean free path 平均自由程Mean time before failure (MTBF) 平均工作时间Mechanical 机械的Membrane (1)薄腊，膜片(2)隔膜Megeto - resistance 磁阻Mesa 台面MESFET-Metal Semiconductor 金属半导体FET Metalorganic Chemical Vapor Deposition MOCVD 金属氧化物化学汽相淀积Metallization 金属化Metal oxide semiconductor (MOS)金属氧化物半导体MeV 兆电子伏Microelectronic technique 微电子技术Microelectronics 微电子学Microelectromechanical System (MEMS) 微电子机械系统Microwave 微波Millimeterwave 毫米波Minority carrier 少数载流子Misfit 失配Mismatching 失配Mobility 迁移率Module 模块Modulate 调制Molecular crystal 分子晶体Monolithic IC 单片MOSFET 金属氧化物半导体场效应晶体管Mount 安装Multiplication 倍增Modulator 调制Multi-chip IC 多芯片ICMulti-chip module(MCM) 多芯片模块Multilayer 多层Multiplication coefficient 倍增因子Multiplexer 复用器Multiplier 倍增器Naked chip 未封装的芯片（裸片）Nanometer 纳米Nanotechnology 纳米技术Negative feedback 负反馈Negative resistance 负阻Negative-temperature-coefficient负温度系数Nesting 套刻Noise figure 噪声系数Nonequilibrium 非平衡Nonvolatile 非挥发（易失）性Normally off/on 常闭/开Nuclear 核Numerical analysis 数值分析Occupied band 满带Offset 偏移、失调On standby 待命状态Ohmic contact 欧姆接触Open circuit 开路Operating point 工作点Operating bias 工作偏置Operational amplifier (OPAMP)运算放大器Optical photon 光子Optical quenching 光猝灭Optical transition 光跃迁Optical-coupled isolator 光耦合隔离器Organic semiconductor 有机半导体Orientation 晶向、定向Oscillator 振荡器Outline 外形Out-of-contact mask 非接触式掩模Output characteristic 输出特性Output power 输出功率Output voltage swing 输出电压摆幅Overcompensation 过补偿Over-current protection 过流保护Over shoot 过冲Over-voltage protection 过压保护Overlap 交迭Overload 过载Oscillator 振荡器Oxide 氧化物Oxidation 氧化Oxide passivation 氧化层钝化Package 封装Pad 压焊点Parameter 参数Parasitic effect 寄生效应Parasitic oscillation 寄生振荡Pass band 通带Passivation 钝化Passive component 无源元件Passive device 无源器件Passive surface 钝化界面Parasitic transistor 寄生晶体管Pattern 图形Payload 有效载荷Peak-point voltage 峰点电压Peak voltage 峰值电压Permanent-storage circuit 永久存储电路Period 周期Permeable - base 可渗透基区Phase-lock loop 锁相环Phase drift 相移Phonon spectra 声子谱Photo conduction 光电导Photo diode 光电二极管Photoelectric cell 光电池Photoelectric effect 光电效应Photonic devices 光子器件Photolithographic process 光刻工艺Photoluminescence 光致发光Photo resist （光敏）抗腐蚀剂Photo mask 光掩模Piezoelectric effect 压电效应Pin 管脚Pinch off 夹断Pinning of Fermi level 费米能级的钉扎（效应）Planar process 平面工艺Planar transistor 平面晶体管Plasma 等离子体Plane 平面的Plasma 等离子体Plate 板电路板P-N junction pn结Poisson equation 泊松方程Point contact 点接触Polarity 极性Polycrystal 多晶Polymer semiconductor 聚合物半导体Poly-silicon 多晶硅Positive 正的Potential (电)势Potential barrier 势垒Potential well 势阱Power electronic devices电力电子器件Power dissipation 功耗Power transistor 功率晶体管Preamplifier 前置放大器Primary flat 主平面Print-circuit board(PCB) 印制电路板Probability 几率Probe 探针Procedure 工艺Process 工艺Projector 投影仪Propagation delay 传输延时Proton 质子Proximity effect 邻近效应Pseudopotential method 赝势法Pump 泵浦Punch through 穿通Pulse triggering/modulating 脉冲触发/调制Pulse Widen Modulator(PWM) 脉冲宽度调制Punchthrough 穿通Push-pull stage 推挽级Q Q值Quality factor 品质因子Quantization 量子化Quantum 量子Quantum efficiency 量子效应Quantum mechanics 量子力学Quasi – Fermi－level 准费米能级Quartz 石英Radar 雷达Radiation conductivity 辐射电导率Radiation damage 辐射损伤Radiation flux density 辐射通量密度Radiation hardening 辐射加固Radiation protection 辐射保护Radiative - recombination 辐照复合Radio 无线电射电射频Radio-frequency RF 射频Raman 拉曼Random 随机Range 测距Radio 比率系数Ray 射线Reactive sputtering source 反应溅射源Real time 实时Receiver 接收机Recombination 复合Recovery diode 恢复二极管Record 记录Recovery time 恢复时间Rectifier 整流器（管）Rectifying contact 整流接触Red light 红光Reference 基准点基准参考点Refractive index 折射率Register 寄存器Regulate 控制调整Relative 相对的Relaxation 驰豫Relaxation lifetime 驰豫时间Relay 中继Reliability 可靠性Remote 远程Repeatability 可重复性Reproduction 重复制造Residual current 剩余电流Resonance 谐振Resin 树脂Resistance 电阻Resistor 电阻器Resistivity 电阻率Regulator 稳压管（器）Resolution 分辨率Response time 响应时间Return signal 回波信号Reverse 反向的Reverse bias 反向偏置Ribbon 光纤带Ridge waveguide 脊形波导Ring laser 环形激光器Rotary wave 旋转波Run 运行Sampling circuit 取样电路Sapphire 蓝宝石（Al2O3）Satellite valley 卫星谷Saturated current range 电流饱和区Scan 扫描Scaled down 按比例缩小Scattering 散射Schematic layout 示意图，简图Schottky 肖特基Schottky barrier 肖特基势垒Schottky contact 肖特基接触Screen 筛选Scribing grid 划片格Secondary flat 次平面Seed crystal 籽晶Segregation 分凝Selectivity 选择性Self aligned 自对准的Self diffusion 自扩散Semiconductor 半导体Semiconductor laser半导体激光器Semiconductor-controlled rectifier 半导体可控硅Sensitivity 灵敏度Sensor 传感器Serial 串行/串联Series inductance 串联电感Settle time 建立时间Sheet resistance 薄层电阻Shaping 成型Shield 屏蔽Shifter 移相器Short circuit 短路Shot noise 散粒噪声Shunt 分流Sidewall capacitance 边墙电容Signal 信号Silica glass 石英玻璃Silicon 硅Silicon carbide 碳化硅Silicon dioxide (SiO2) 二氧化硅Silicon Nitride(Si3N4) 氮化硅Silicon On Insulator 绝缘体上硅Silver whiskers 银须Simple cubic 简立方Simulation 模拟Single crystal 单晶Sink 热沉Sinter 烧结Skin effect 趋肤效应Slot 槽隙Slow wave 慢波Smooth 光滑的Subthreshold 亚阈值的Solar battery/cell 太阳能电池Solid circuit 固体电路Solid Solubility 固溶度Solution 溶液Sonband 子带Source 源极Source follower 源随器Space charge 空间电荷Space Craft 宇宙飞行器Spacing 间距Specific heat(PT) 比热Spectral 光谱Spectrum 光谱(复数)Speed-power product 速度功耗乘积Spherical 球面的Spin 自旋Split 分裂Spontaneous emission 自发发射Spot 斑点Spray 喷涂Spreading resistance 扩展电阻Sputter 溅射Square root 平方根Stability 稳定性Stacking fault 层错Standard 标准的Standing wave 驻波State-of-the-art 最新技术Static characteristic 静态特性Statistical analysis 统计分析Steady state 稳态Step motor 步进式电动机Stimulated emission 受激发射Stimulated recombination 受激复合Stopband 阻带Storage time 存储时间Stress 应力Stripline 带状线Subband 次能带Sublimation 升华Submillimeter 亚毫米波Substrate 衬底Substitutional 替位式的Superconductor 超导(电)体Superlattice 超晶格Supply 电源Surface mound表面安装Surge capacity 浪涌能力Switching time 开关时间Switch 开关Synchronizer 同步器，同步装置Synthetic-aperture 合成孔径System 系统Technical 技术的，工艺的Telecommunication 远距通信，电信Telescope 望远镜Terahertz 太赫兹Terminal 终端Template 模板Temperature 温度Tensor 张量Test 测试试验Thermal activation 热激发Thermal conductivity 热导率Thermal equilibrium 热平衡Thermal Oxidation 热氧化Thermal resistance 热阻Thermal sink 热沉Thermal velocity 热运动Thick- film technique 厚膜技术Thin- film hybrid IC 薄膜混合集成电路Thin-Film Transistor(TFT) 薄膜晶体Three dimension 三维Threshold 阈值Through Silicon Via 硅通孔Thyistor 晶闸管Time resolution 时间分辨率Tolerance 公差T/R module 发射/接收模块Transconductance 跨导Transfer characteristic 转移特性Transfer electron 转移电子Transfer function 传输函数Transient 瞬态的Transistor aging(stress) 晶体管老化Transit time 渡越时间Transition 跃迁Transition-metal silica 过度金属硅化物Transition probability 跃迁几率Transition region 过渡区Transmissivity 透射率Transmitter 发射机Transceiver 收发机Transport 输运Transverse 横向的Trap 陷阱Trapping 俘获Trapped charge 陷阱电荷Travelling wave 行波Trigger 触发Trim 调配调整Triple diffusion 三重扩散Tolerance 容差Tube 管子电子管Tuner 调节器Tunnel(ing) 隧道（穿）Tunnel current 隧道电流Turn - off time 关断时间Ultraviolet 紫外的Ultrabright 超亮的Ultrasonic 超声的Underfilling 下填充Undoped 无掺杂Unijunction 单结的Unipolar 单极的Unit cell 原（元）胞Unity- gain frequency 单位增益频率Unilateral-switch 单向开关Vacancy 空位Vacuum 真空Valence(value) band 价带Value band edge 价带顶Valence bond 价键Vapour phase 汽相Varactor 变容管Variable 可变的Vector 矢量Vertical 垂直的Vibration 振动Visible light 可见光Voltage 电压Volt 伏特Wafer 晶片Watt 瓦Wave guide 波导Wavelength 波长Wave-particle duality 波粒二相性Wear-out 烧毁Wetting 浸润Wideband 宽禁带Wire 引线Wire routing 布线Work function 功函数Worst-case device 最坏情况器件X-ray X射线Yield 成品率Zinc 锌欢迎您的下载，资料仅供参考！致力为企业和个人提供合同协议，策划案计划书，学习资料等等打造全网一站式需求。
半导体一些术语的中英文对照离子注入机ion implanterLSS理论Lindhand Scharff and Schiott theory 又称“林汉德-斯卡夫-斯高特理论”。
沟道效应channeling effect射程分布range distribution深度分布depth distribution投影射程projected range阻止距离stopping distance阻止本领stopping power标准阻止截面standard stopping cross section 退火annealing激活能activation energy等温退火isothermal annealing激光退火laser annealing应力感生缺陷stress-induced defect择优取向preferred orientation制版工艺mask-making technology图形畸变pattern distortion初缩first minification精缩final minification母版master mask铬版chromium plate干版dry plate乳胶版emulsion plate透明版see-through plate高分辨率版high resolution plate, HRP超微粒干版plate for ultra-microminiaturization 掩模mask掩模对准mask alignment对准精度alignment precision光刻胶photoresist又称“光致抗蚀剂”。
负性光刻胶negative photoresist正性光刻胶positive photoresist无机光刻胶inorganic resist多层光刻胶multilevel resist电子束光刻胶electron beam resistX射线光刻胶X-ray resist刷洗scrubbing甩胶spinning涂胶photoresist coating后烘postbaking光刻photolithographyX射线光刻X-ray lithography电子束光刻electron beam lithography离子束光刻ion beam lithography深紫外光刻deep-UV lithography光刻机mask aligner投影光刻机projection mask aligner曝光exposure接触式曝光法contact exposure method接近式曝光法proximity exposure method光学投影曝光法optical projection exposure method 电子束曝光系统electron beam exposure system分步重复系统step-and-repeat system显影development线宽linewidth去胶stripping of photoresist氧化去胶removing of photoresist by oxidation等离子［体］去胶removing of photoresist by plasma 刻蚀etching干法刻蚀dry etching反应离子刻蚀reactive ion etching, RIE各向同性刻蚀isotropic etching各向异性刻蚀anisotropic etching反应溅射刻蚀reactive sputter etching离子铣ion beam milling又称“离子磨削”。
半导体微电子专业词汇中英文对照Accelerated testing 加速实验Acceptor 受主Acceptor atom 受主原子Accumulation 积累、堆积Accumulating contact 积累接触Accumulation region 积累区Accumulation layer 积累层Acoustic Surface Wave 声表面波Active region 有源区Active component 有源元Active device 有源器件Activation 激活Activation energy 激活能Active region 有源（放大）区A/D conversion 模拟—数字转换Adhesives 粘接剂Admittance 导纳Aging 老化Airborne 空载Allowed band 允带allowance 容限，公差Alloy-junction device合金结器件Aluminum(Aluminum) 铝Aluminum – oxide 铝氧化物Aluminum Nitride 氮化铝Aluminum passivation 铝钝化Ambipolar 双极的Ambient temperature 环境温度A M light 振幅调制光，调幅光amplitude limiter 限幅器Amorphous 无定形的，非晶体的Amplifier 功放放大器Analogue（Analog）comparator 模拟比较器Angstrom 埃Anneal 退火Anisotropic 各向异性的Anode 阳极Antenna 天线Aperture 孔径Arsenide （As) 砷Array 阵列Atomic 原子的Atom Clock 原子钟Attenuation 衰减Audio 声频Auger 俄歇Automatic 自动的Automotive 汽车的Availability 实用性Avalanche 雪崩Avalanche breakdown 雪崩击穿Avalanche excitation雪崩激发Background carrier 本底载流子Background doping 本底掺杂Backward 反向Backward bias 反向偏置Ball bond 球形键合Band 能带Band gap 能带间隙Bandwidth 带宽Bar 巴条发光条Barrier 势垒Barrier layer 势垒层Barrier width 势垒宽度Base 基极Base contact 基区接触Base stretching 基区扩展效应Base transit time 基区渡越时间Base transport efficiency基区输运系数Base—width modulation基区宽度调制Batch 批次Battery 电池Beam 束光束电子束Bench 工作台Bias 偏置Bilateral switch 双向开关Binary code 二进制代码Binary compound semiconductor 二元化合物半导体Bipolar 双极性的Bipolar Junction Transistor （BJT）双极晶体管Bit 位比特Blocking band 阻带Body — centered 体心立方Body-centred cubic structure 体立心结构Boltzmann 波尔兹曼Bond 键、键合Bonding electron 价电子Bonding pad 键合点Boron 硼Borosilicate glass 硼硅玻璃Bottom-up 由下而上的Boundary condition 边界条件Bound electron 束缚电子Bragg effect 布拉格效应Breadboard 模拟板、实验板Break down 击穿Break over 转折Brillouin 布里渊FBrillouin zone 布里渊区Buffer 缓冲器Built-in 内建的Build-in electric field 内建电场Bulk 体/体内Bulk absorption 体吸收Bulk generation 体产生Bulk recombination 体复合Burn—in 老化Burn out 烧毁Buried channel 埋沟Buried diffusion region 隐埋扩散区Bus 总线Calibration 校准,检定，定标、刻度，分度Capacitance 电容Capture cross section 俘获截面Capture carrier 俘获载流子Carbon dioxide (CO2）二氧化碳Carrier 载流子、载波Carry bit 进位位Cascade 级联Case 管壳Cathode 阴极Cavity 腔体Center 中心Ceramic 陶瓷（的）Channel 沟道Channel breakdown 沟道击穿Channel current 沟道电流Channel doping 沟道掺杂Channel shortening 沟道缩短Channel width 沟道宽度Characteristic impedance 特征阻抗Charge 电荷、充电Charge-compensation effects 电荷补偿效应Charge conservation 电荷守恒Charge drive/exchange/sharing/transfer/storage 电荷驱动/交换/共享/转移/存储Chemical etching 化学腐蚀法Chemically—Polish 化学抛光Chemically—Mechanically Polish （CMP）化学机械抛光Chemical vapor deposition (cvd）化学汽相淀积Chip 芯片Chip yield 芯片成品率Circuit 电路Clamped 箝位Clamping diode 箝位二极管Cleavage plane 解理面Clean 清洗Clock rate 时钟频率Clock generator 时钟发生器Clock flip-flop 时钟触发器Close—loop gain 闭环增益Coating 涂覆涂层Coefficient of thermal expansion 热膨胀系数Coherency 相干性Collector 集电极Collision 碰撞Compensated OP-AMP 补偿运放Common-base/collector/emitter connection 共基极/集电极/发射极连接Common—gate/drain/source connection 共栅/漏/源连接Common-mode gain 共模增益Common-mode input 共模输入Common—mode rejection ratio (CMRR) 共模抑制比Communication 通信Compact 致密的Compatibility 兼容性Compensation 补偿Compensated impurities 补偿杂质Compensated semiconductor 补偿半导体Complementary Darlington circuit 互补达林顿电路Complementary Metal-Oxide-SemiconductorField-Effect—Transistor(CMOS) 互补金属氧化物半导体场效应晶体管Computer-aided design (CAD）/test(CAT）/manufacture（CAM) 计算机辅助设计/ 测试/制造Component 元件Compound Semiconductor 化合物半导体Conductance 电导Conduction band （edge）导带（底)Conduction level/state 导带态Conductor 导体Conductivity 电导率Configuration 结构Conlomb 库仑Constants 物理常数Constant energy surface 等能面Constant—source diffusion恒定源扩散Contact 接触Continuous wave 连续波Continuity equation 连续性方程Contact hole 接触孔Contact potential 接触电势Controlled 受控的Converter 转换器Conveyer 传输器Cooling 冷却Copper interconnection system 铜互连系统Corrosion 腐蚀Coupling 耦合Covalent 共阶的Crossover 交叉Critical 临界的Cross—section 横断面Crucible坩埚Cryogenic cooling system 冷却系统Crystal defect/face/orientation/lattice 晶体缺陷/晶面/晶向/晶格Cubic crystal system 立方晶系Current density 电流密度Curvature 曲率Current drift/drive/sharing 电流漂移/驱动/共享Current Sense 电流取样Curve 曲线Custom integrated circuit 定制集成电路Cut off 截止Cylindrical 柱面的Czochralshicrystal 直立单晶Czochralski technique 切克劳斯基技术（Cz法直拉晶体J）) Dangling bonds 悬挂键Dark current 暗电流Dead time 空载时间Decade 十进制Decibel （dB) 分贝Decode 解码Deep acceptor level 深受主能级Deep donor level 深施主能级Deep energy level 深能级Deep impurity level 深度杂质能级Deep trap 深陷阱Defeat 缺陷Degenerate semiconductor 简并半导体Degeneracy 简并度Degradation 退化Degree Celsius（centigrade) /Kelvin 摄氏/开氏温度Delay 延迟Density 密度Density of states 态密度Depletion 耗尽Depletion approximation 耗尽近似Depletion contact 耗尽接触Depletion depth 耗尽深度Depletion effect 耗尽效应Depletion layer 耗尽层Depletion MOS 耗尽MOS Depletion region 耗尽区Deposited film 淀积薄膜Deposition process 淀积工艺Design rules 设计规则Detector 探测器Developer 显影剂Diamond 金刚石Die 芯片（复数dice）Diode 二极管Dielectric Constant 介电常数Dielectric isolation 介质隔离Difference—mode input 差模输入Differential amplifier 差分放大器Differential capacitance 微分电容Diffusion 扩散Diffusion coefficient 扩散系数Diffusion constant 扩散常数Diffusivity 扩散率Diffusion capacitance/barrier/current/furnace 扩散电容/势垒/电流/炉Digital circuit 数字电路Dimension （1)尺寸（2）量钢（3)维,度Diode 二极管Dipole domain 偶极畴Dipole layer 偶极层Direct—coupling 直接耦合Direct-gap semiconductor 直接带隙半导体Direct transition 直接跃迁Directional antenna 定向天线Discharge 放电Discrete component 分立元件Disorder 无序的Display 显示器Dissipation 耗散Dissolution 溶解Distributed capacitance 分布电容Distributed model 分布模型Displacement 位移Dislocation 位错Domain 畴Donor 施主Donor exhaustion 施主耗尽Dopant 掺杂剂Doped semiconductor 掺杂半导体Doping concentration 掺杂浓度Dose 剂量Double-diffusive MOS(DMOS）双扩散MOS Drift 漂移Drift field 漂移电场Drift mobility 迁移率Dry etching 干法腐蚀Dry/wet oxidation 干/湿法氧化Dose 剂量Dual—polarization 双偏振,双极化Duty cycle 工作周期Dual-in—line package （DIP）双列直插式封装Dynamics 动态Dynamic characteristics 动态属性Dynamic impedance 动态阻抗Early effect 厄利效应Early failure 早期失效Effect 效应Effective mass 有效质量Electric Erase Programmable Read Only Memory（E2PROM）电可擦除只读存储器Electrode 电极Electromigration 电迁移Electron affinity 电子亲和势Electron—beam 电子束Electroluminescence 电致发光Electron gas 电子气Electron trapping center 电子俘获中心Electron Volt （eV）电子伏Electro—optical 光电的Electrostatic 静电的Element 元素/元件/配件Elemental semiconductor 元素半导体Ellipse 椭圆Emitter 发射极Emitter—coupled logic 发射极耦合逻辑Emitter-coupled pair 发射极耦合对Emitter follower 射随器Empty band 空带Emitter crowding effect 发射极集边（拥挤)效应Endurance test =life test 寿命测试Energy state 能态Energy momentum diagram 能量-动量（E—K)图Enhancement mode 增强型模式Enhancement MOS 增强性MOSEnteric （低)共溶的Environmental test 环境测试Epitaxial 外延的Epitaxial layer 外延层Epitaxial slice 外延片Epoxy 环氧的Equivalent circuit 等效电路Equilibrium majority /minority carriers 平衡多数/少数载流子Equipment 设备Erasable Programmable ROM （EPROM)可搽取（编程）存储器Erbium laser 掺铒激光器Error function complement 余误差函数Etch 刻蚀Etchant 刻蚀剂Etching mask 抗蚀剂掩模Excess carrier 过剩载流子Excitation energy 激发能Excited state 激发态Exciton 激子Exponential 指数的Extrapolation 外推法Extrinsic 非本征的Extrinsic semiconductor 杂质半导体Fabry—Perot amplifier 法布里-珀罗放大器Face - centered 面心立方Fall time 下降时间Fan-in 扇入Fan-out 扇出Fast recovery 快恢复Fast surface states 快表面态Feedback 反馈Fermi level 费米能级Femi potential 费米势Fiber optic 光纤Field effect transistor 场效应晶体管Field oxide 场氧化层Figure of merit 品质因数Filter 滤波器Filled band 满带Film 薄膜Fine pitch 细节距Flash memory 闪存存储器Flat band 平带Flat pack 扁平封装Flatness 平整度Flexible 柔性的Flicker noise 闪烁(变）噪声Flip-chip 倒装芯片Flip— flop toggle 触发器翻转Floating gate 浮栅Fluoride etch 氟化氢刻蚀Focal plane 焦平面Forbidden band 禁带Formulation 列式,表达Forward bias 正向偏置Forward blocking /conducting 正向阻断/导通Free electron 自由电子Frequency deviation noise 频率漂移噪声Frequency response 频率响应Function 函数Gain 增益Gallium-Arsenide(GaAs）砷化镓Gallium Nitride 氮化镓Gate 门、栅、控制极Gate oxide 栅氧化层Gate width 栅宽Gauss（ian）高斯Gaussian distribution profile 高斯掺杂分布Generation—recombination 产生—复合Geometries 几何尺寸Germanium(Ge）锗Gold 金Graded 缓变的Graded （gradual) channel 缓变沟道Graded junction 缓变结Grain 晶粒Gradient 梯度Graphene 石墨烯Grating 光栅Green laser 绿光激光器Ground 接地Grown junction 生长结Guard ring 保护环Guide wave 导波波导Gunn - effect 狄氏效应Gyroscope 陀螺仪Hardened device 辐射加固器件Harmonics 谐波Heat diffusion 热扩散Heat sink 散热器、热沉Heavy/light hole band 重/轻空穴带Hell - effect 霍尔效应Hertz 赫兹Heterojunction 异质结Heterojunction structure 异质结结构Heterojunction Bipolar Transistor（HBT）异质结双极型晶体High field property 高场特性High-performance MOS(H—MOS）高性能MOS器件High power 大功率Hole 空穴Homojunction 同质结Horizontal epitaxial reactor 卧式外延反应器Hot carrier 热载流子Hybrid integration 混合集成Illumination （1)照明(2）照明学Image - force 镜象力Impact ionization 碰撞电离Impedance 阻抗Imperfect structure 不完整结构Implantation dose 注入剂量Implanted ion 注入离子Impurity 杂质Impurity scattering 杂志散射Inch 英寸Incremental resistance 电阻增量(微分电阻）In—contact mask 接触式掩模Index of refraction 折射率Indium 铟Indium tin oxide (ITO) 铟锡氧化物Inductance 电感Induced channel 感应沟道Infrared 红外的Injection 注入Input power 输入功率Insertion loss 插入损耗Insulator 绝缘体Insulated Gate FET（IGFET）绝缘栅FET Integrated injection logic 集成注入逻辑Integration 集成、积分Integrated Circuit 集成电路Interconnection 互连Interconnection time delay 互连延时Interdigitated structure 交互式结构Interface 界面Interference 干涉International system of unions 国际单位制Internally scattering 谷间散射Interpolation 内插法Intrinsic 本征的Intrinsic semiconductor 本征半导体Inverse operation 反向工作Inversion 反型Inverter 倒相器Ion 离子Ion beam 离子束Ion etching 离子刻蚀Ion implantation 离子注入Ionization 电离Ionization energy 电离能Irradiation 辐照Isolation land 隔离岛Isotropic 各向同性Junction FET(JFET) 结型场效应管Junction isolation 结隔离Junction spacing 结间距Junction side—wall 结侧壁Laser 激光器Laser diode 激光二极管Latch up 闭锁Lateral 横向的Lattice 晶格Layout 版图Lattice binding/cell/constant/defect/distortion 晶格结合力/晶胞/晶格/晶格常熟/晶格缺陷/晶格畸变Lead 铅Leakage current （泄）漏电流Life time 寿命linearity 线性度Linked bond 共价键Liquid Nitrogen 液氮Liquid－phase epitaxial growth technique 液相外延生长技术Lithography 光刻Light Emitting Diode（LED) 发光二极管Linearity 线性化Liquid 液体Lock in 锁定Longitudinal 纵向的Long life 长寿命Lumped model 集总模型Magnetic 磁的Majority carrier 多数载流子Mask 掩膜板，光刻板Mask level 掩模序号Mask set 掩模组Mass - action law 质量守恒定律Master—slave D flip—flop 主从D 触发器Matching 匹配Material 材料Maxwell 麦克斯韦Mean free path 平均自由程Mean time before failure (MTBF) 平均工作时间Mechanical 机械的Membrane （1）薄腊，膜片（2）隔膜Megeto - resistance 磁阻Mesa 台面MESFET—Metal Semiconductor 金属半导体FET Metalorganic Chemical Vapor Deposition MOCVD 金属氧化物化学汽相淀积Metallization 金属化Metal oxide semiconductor (MOS）金属氧化物半导体MeV 兆电子伏Microelectronic technique 微电子技术Microelectronics 微电子学Microelectromechanical System (MEMS) 微电子机械系统Microwave 微波Millimeterwave 毫米波Minority carrier 少数载流子Misfit 失配Mismatching 失配Mobility 迁移率Module 模块Modulate 调制Molecular crystal 分子晶体Monolithic IC 单片MOSFET 金属氧化物半导体场效应晶体管Mount 安装Multiplication 倍增Modulator 调制Multi-chip IC 多芯片ICMulti-chip module(MCM）多芯片模块Multilayer 多层Multiplication coefficient 倍增因子Multiplexer 复用器Multiplier 倍增器Naked chip 未封装的芯片(裸片）Nanometer 纳米Nanotechnology 纳米技术Negative feedback 负反馈Negative resistance 负阻Negative—temperature—coefficient负温度系数Nesting 套刻Noise figure 噪声系数Nonequilibrium 非平衡Nonvolatile 非挥发（易失）性Normally off/on 常闭/开Nuclear 核Numerical analysis 数值分析Occupied band 满带Offset 偏移、失调On standby 待命状态Ohmic contact 欧姆接触Open circuit 开路Operating point 工作点Operating bias 工作偏置Operational amplifier (OPAMP）运算放大器Optical photon 光子Optical quenching 光猝灭Optical transition 光跃迁Optical-coupled isolator 光耦合隔离器Organic semiconductor 有机半导体Orientation 晶向、定向Oscillator 振荡器Outline 外形Out—of-contact mask 非接触式掩模Output characteristic 输出特性Output power 输出功率Output voltage swing 输出电压摆幅Overcompensation 过补偿Over—current protection 过流保护Over shoot 过冲Over-voltage protection 过压保护Overlap 交迭Overload 过载Oscillator 振荡器Oxide 氧化物Oxidation 氧化Oxide passivation 氧化层钝化Package 封装Pad 压焊点Parameter 参数Parasitic effect 寄生效应Parasitic oscillation 寄生振荡Pass band 通带Passivation 钝化Passive component 无源元件Passive device 无源器件Passive surface 钝化界面Parasitic transistor 寄生晶体管Pattern 图形Payload 有效载荷Peak—point voltage 峰点电压Peak voltage 峰值电压Permanent—storage circuit 永久存储电路Period 周期Permeable — base 可渗透基区Phase-lock loop 锁相环Phase drift 相移Phonon spectra 声子谱Photo conduction 光电导Photo diode 光电二极管Photoelectric cell 光电池Photoelectric effect 光电效应Photonic devices 光子器件Photolithographic process 光刻工艺Photoluminescence 光致发光Photo resist (光敏)抗腐蚀剂Photo mask 光掩模Piezoelectric effect 压电效应Pin 管脚Pinch off 夹断Pinning of Fermi level 费米能级的钉扎（效应）Planar process 平面工艺Planar transistor 平面晶体管Plasma 等离子体Plane 平面的Plasma 等离子体Plate 板电路板P—N junction pn结Poisson equation 泊松方程Point contact 点接触Polarity 极性Polycrystal 多晶Polymer semiconductor 聚合物半导体Poly—silicon 多晶硅Positive 正的Potential (电)势Potential barrier 势垒Potential well 势阱Power electronic devices电力电子器件Power dissipation 功耗Power transistor 功率晶体管Preamplifier 前置放大器Primary flat 主平面Print-circuit board（PCB) 印制电路板Probability 几率Probe 探针Procedure 工艺Process 工艺Projector 投影仪Propagation delay 传输延时Proton 质子Proximity effect 邻近效应Pseudopotential method 赝势法Pump 泵浦Punch through 穿通Pulse triggering/modulating 脉冲触发/调制Pulse Widen Modulator(PWM）脉冲宽度调制Punchthrough 穿通Push-pull stage 推挽级Q Q值Quality factor 品质因子Quantization 量子化Quantum 量子Quantum efficiency 量子效应Quantum mechanics 量子力学Quasi – Fermi－level 准费米能级Quartz 石英Radar 雷达Radiation conductivity 辐射电导率Radiation damage 辐射损伤Radiation flux density 辐射通量密度Radiation hardening 辐射加固Radiation protection 辐射保护Radiative - recombination 辐照复合Radio 无线电射电射频Radio—frequency RF 射频Raman 拉曼Random 随机Range 测距Radio 比率系数Ray 射线Reactive sputtering source 反应溅射源Real time 实时Receiver 接收机Recombination 复合Recovery diode 恢复二极管Record 记录Recovery time 恢复时间Rectifier 整流器（管）Rectifying contact 整流接触Red light 红光Reference 基准点基准参考点Refractive index 折射率Register 寄存器Regulate 控制调整Relative 相对的Relaxation 驰豫Relaxation lifetime 驰豫时间Relay 中继Reliability 可靠性Remote 远程Repeatability 可重复性Reproduction 重复制造Residual current 剩余电流Resonance 谐振Resin 树脂Resistance 电阻Resistor 电阻器Resistivity 电阻率Regulator 稳压管(器）Resolution 分辨率Response time 响应时间Return signal 回波信号Reverse 反向的Reverse bias 反向偏置Ribbon 光纤带Ridge waveguide 脊形波导Ring laser 环形激光器Rotary wave 旋转波Run 运行Sampling circuit 取样电路Sapphire 蓝宝石（Al2O3）Satellite valley 卫星谷Saturated current range 电流饱和区Scan 扫描Scaled down 按比例缩小Scattering 散射Schematic layout 示意图,简图Schottky 肖特基Schottky barrier 肖特基势垒Schottky contact 肖特基接触Screen 筛选Scribing grid 划片格Secondary flat 次平面Seed crystal 籽晶Segregation 分凝Selectivity 选择性Self aligned 自对准的Self diffusion 自扩散Semiconductor 半导体Semiconductor laser半导体激光器Semiconductor—controlled rectifier 半导体可控硅Sensitivity 灵敏度Sensor 传感器Serial 串行/串联Series inductance 串联电感Settle time 建立时间Sheet resistance 薄层电阻Shaping 成型Shield 屏蔽Shifter 移相器Short circuit 短路Shot noise 散粒噪声Shunt 分流Sidewall capacitance 边墙电容Signal 信号Silica glass 石英玻璃Silicon 硅Silicon carbide 碳化硅Silicon dioxide （SiO2）二氧化硅Silicon Nitride（Si3N4) 氮化硅Silicon On Insulator 绝缘体上硅Silver whiskers 银须Simple cubic 简立方Simulation 模拟Single crystal 单晶Sink 热沉Sinter 烧结Skin effect 趋肤效应Slot 槽隙Slow wave 慢波Smooth 光滑的Subthreshold 亚阈值的Solar battery/cell 太阳能电池Solid circuit 固体电路Solid Solubility 固溶度Solution 溶液Sonband 子带Source 源极Source follower 源随器Space charge 空间电荷Space Craft 宇宙飞行器Spacing 间距Specific heat（PT）比热Spectral 光谱Spectrum 光谱（复数）Speed—power product 速度功耗乘积Spherical 球面的Spin 自旋Split 分裂Spontaneous emission 自发发射Spot 斑点Spray 喷涂Spreading resistance 扩展电阻Sputter 溅射Square root 平方根Stability 稳定性Stacking fault 层错Standard 标准的Standing wave 驻波State-of-the—art 最新技术Static characteristic 静态特性Statistical analysis 统计分析Steady state 稳态Step motor 步进式电动机Stimulated emission 受激发射Stimulated recombination 受激复合Stopband 阻带Storage time 存储时间Stress 应力Stripline 带状线Subband 次能带Sublimation 升华Submillimeter 亚毫米波Substrate 衬底Substitutional 替位式的Superconductor 超导（电）体Superlattice 超晶格Supply 电源Surface mound表面安装Surge capacity 浪涌能力Switching time 开关时间Switch 开关Synchronizer 同步器，同步装置Synthetic-aperture 合成孔径System 系统Technical 技术的，工艺的Telecommunication 远距通信，电信Telescope 望远镜Terahertz 太赫兹Terminal 终端Template 模板Temperature 温度Tensor 张量Test 测试试验Thermal activation 热激发Thermal conductivity 热导率Thermal equilibrium 热平衡Thermal Oxidation 热氧化Thermal resistance 热阻Thermal sink 热沉Thermal velocity 热运动Thick- film technique 厚膜技术Thin- film hybrid IC 薄膜混合集成电路Thin—Film Transistor(TFT）薄膜晶体Three dimension 三维Threshold 阈值Through Silicon Via 硅通孔Thyistor 晶闸管Time resolution 时间分辨率Tolerance 公差T/R module 发射/接收模块Transconductance 跨导Transfer characteristic 转移特性Transfer electron 转移电子Transfer function 传输函数Transient 瞬态的Transistor aging(stress）晶体管老化Transit time 渡越时间Transition 跃迁Transition-metal silica 过度金属硅化物Transition probability 跃迁几率Transition region 过渡区Transmissivity 透射率Transmitter 发射机Transceiver 收发机Transport 输运Transverse 横向的Trap 陷阱Trapping 俘获Trapped charge 陷阱电荷Travelling wave 行波Trigger 触发Trim 调配调整Triple diffusion 三重扩散Tolerance 容差Tube 管子电子管Tuner 调节器Tunnel（ing）隧道（穿）Tunnel current 隧道电流Turn - off time 关断时间Ultraviolet 紫外的Ultrabright 超亮的Ultrasonic 超声的Underfilling 下填充Undoped 无掺杂Unijunction 单结的Unipolar 单极的Unit cell 原（元）胞Unity- gain frequency 单位增益频率Unilateral—switch 单向开关Vacancy 空位Vacuum 真空Valence(value）band 价带Value band edge 价带顶Valence bond 价键Vapour phase 汽相Varactor 变容管Variable 可变的Vector 矢量Vertical 垂直的Vibration 振动Visible light 可见光Voltage 电压Volt 伏特Wafer 晶片Watt 瓦Wave guide 波导Wavelength 波长Wave—particle duality 波粒二相性Wear-out 烧毁Wetting 浸润Wideband 宽禁带Wire 引线Wire routing 布线Work function 功函数Worst-case device 最坏情况器件X—ray X射线Yield 成品率Zinc 锌。
半导体微电子专业词汇中英文对照半导体微电子专业词汇中英文对照Accelerated testing 加速实验Acceptor 受主Acceptor atom 受主原子Accumulation 积累、堆积Accumulating contact 积累接触Accumulation region 积累区Accumulation layer 积累层Acoustic Surface Wave 声表面波Active region 有源区Active component 有源元Active device 有源器件Activation 激活Activation energy 激活能Active region 有源（放大）区A/D conversion 模拟-数字转换Adhesives 粘接剂Admittance 导纳Aging 老化Airborne 空载Allowed band 允带allowance 容限，公差Alloy-junction device合金结器件Aluminum(Aluminum) 铝Aluminum – oxide 铝氧化物Aluminum Nitride 氮化铝Aluminum passivation 铝钝化Ambipolar 双极的Ambient temperature 环境温度A M light 振幅调制光，调幅光amplitude limiter 限幅器Amorphous 无定形的，非晶体的Amplifier 功放放大器Analogue(Analog) comparator 模拟比较器Angstrom 埃Anneal 退火Anisotropic 各向异性的Anode 阳极Antenna 天线Aperture 孔径Arsenide (As) 砷Array 阵列Atomic 原子的Atom Clock 原子钟Attenuation 衰减Audio 声频Auger 俄歇Automatic 自动的Automotive 汽车的Availability 实用性Avalanche 雪崩Avalanche breakdown 雪崩击穿Avalanche excitation雪崩激发Background carrier 本底载流子Background doping 本底掺杂Backward 反向Backward bias 反向偏置Ball bond 球形键合Band 能带Band gap 能带间隙Bandwidth 带宽Bar 巴条发光条Barrier 势垒Barrier layer 势垒层Barrier width 势垒宽度Base 基极Base contact 基区接触Base stretching 基区扩展效应Base transit time 基区渡越时间Base transport efficiency基区输运系数Base-width modulation基区宽度调制Batch 批次Battery 电池Beam 束光束电子束Bench 工作台Bias 偏置Bilateral switch 双向开关Binary code 二进制代码Binary compound semiconductor 二元化合物半导体Bipolar 双极性的Bipolar Junction Transistor (BJT)双极晶体管Bit 位比特Blocking band 阻带Body - centered 体心立方Body-centred cubic structure 体立心结构Boltzmann 波尔兹曼Bond 键、键合Bonding electron 价电子Bonding pad 键合点Boron 硼Borosilicate glass 硼硅玻璃Bottom-up 由下而上的Boundary condition 边界条件Bound electron 束缚电子Bragg effect 布拉格效应Breadboard 模拟板、实验板Break down 击穿Break over 转折Brillouin 布里渊FBrillouin zone 布里渊区Buffer 缓冲器Built-in 内建的Build-in electric field 内建电场Bulk 体/体内Bulk absorption 体吸收Bulk generation 体产生Bulk recombination 体复合Burn-in 老化Burn out 烧毁Buried channel 埋沟Buried diffusion region 隐埋扩散区Bus 总线Calibration 校准，检定，定标、刻度，分度Capacitance 电容Capture cross section 俘获截面Capture carrier 俘获载流子Carbon dioxide (CO2) 二氧化碳Carrier 载流子、载波Carry bit 进位位Cascade 级联Case 管壳Cathode 阴极Cavity 腔体Center 中心Ceramic 陶瓷（的）Channel 沟道Channel breakdown 沟道击穿Channel current 沟道电流Channel doping 沟道掺杂Channel shortening 沟道缩短Channel width 沟道宽度Characteristic impedance 特征阻抗Charge 电荷、充电Charge-compensation effects 电荷补偿效应Charge conservation 电荷守恒Charge drive/exchange/sharing/transfer/storage 电荷驱动/交换/共享/转移/存储Chemical etching 化学腐蚀法Chemically-Polish 化学抛光Chemically-Mechanically Polish (CMP) 化学机械抛光Chemical vapor deposition (cvd)化学汽相淀积Chip 芯片Chip yield 芯片成品率Circuit 电路Clamped 箝位Clamping diode 箝位二极管Cleavage plane 解理面Clean 清洗Clock rate 时钟频率Clock generator 时钟发生器Clock flip-flop 时钟触发器Close-loop gain 闭环增益Coating 涂覆涂层Coefficient of thermal expansion 热膨胀系数Coherency 相干性Collector 集电极Collision 碰撞Compensated OP-AMP 补偿运放Common-base/collector/emitter connection 共基极/集电极/发射极连接Common-gate/drain/source connection 共栅/漏/源连接Common-mode gain 共模增益Common-mode input 共模输入Common-mode rejection ratio (CMRR) 共模抑制比Communication 通信Compact 致密的Compatibility 兼容性Compensation 补偿Compensated impurities 补偿杂质Compensated semiconductor 补偿半导体Complementary Darlington circuit 互补达林顿电路Complementary Metal-Oxide-SemiconductorField-Effect-Transistor(CMOS) 互补金属氧化物半导体场效应晶体管Computer-aided design(CAD)/test(CAT)/manufacture(CAM) 计算机辅助设计/ 测试/制造Component 元件Compound Semiconductor 化合物半导体Conductance 电导Conduction band (edge) 导带(底)Conduction level/state 导带态Conductor 导体Conductivity 电导率Configuration 结构Conlomb 库仑Constants 物理常数Constant energy surface 等能面Constant-source diffusion恒定源扩散Contact 接触Continuous wave 连续波Continuity equation 连续性方程Contact hole 接触孔Contact potential 接触电势Controlled 受控的Converter 转换器Conveyer 传输器Cooling 冷却Copper interconnection system 铜互连系统Corrosion 腐蚀Coupling 耦合Covalent 共阶的Crossover 交叉Critical 临界的Cross-section 横断面Crucible坩埚Cryogenic cooling system 冷却系统Crystal defect/face/orientation/lattice 晶体缺陷/晶面/晶向/晶格Cubic crystal system 立方晶系Current density 电流密度Curvature 曲率Current drift/drive/sharing 电流漂移/驱动/共享Current Sense 电流取样Curve 曲线Custom integrated circuit 定制集成电路Cut off 截止Cylindrical 柱面的Czochralshicrystal 直立单晶Czochralski technique 切克劳斯基技术（Cz法直拉晶体J）) Dangling bonds 悬挂键Dark current 暗电流Dead time 空载时间Decade 十进制Decibel (dB) 分贝Decode 解码Deep acceptor level 深受主能级Deep donor level 深施主能级Deep energy level 深能级Deep impurity level 深度杂质能级Deep trap 深陷阱Defeat 缺陷Degenerate semiconductor 简并半导体Degeneracy 简并度Degradation 退化Degree Celsius(centigrade) /Kelvin 摄氏/开氏温度Delay 延迟Density 密度Density of states 态密度Depletion 耗尽Depletion approximation 耗尽近似Depletion contact 耗尽接触Depletion depth 耗尽深度Depletion effect 耗尽效应Depletion layer 耗尽层Depletion MOS 耗尽MOS Depletion region 耗尽区Deposited film 淀积薄膜Deposition process 淀积工艺Design rules 设计规则Detector 探测器Developer 显影剂Diamond 金刚石Die 芯片（复数dice）Diode 二极管Dielectric Constant 介电常数Dielectric isolation 介质隔离Difference-mode input 差模输入Differential amplifier 差分放大器Differential capacitance 微分电容Diffraction 衍射Diffusion 扩散Diffusion coefficient 扩散系数Diffusion constant 扩散常数Diffusivity 扩散率Diffusion capacitance/barrier/current/furnace 扩散电容/势垒/电流/炉Digital circuit 数字电路Dimension (1)尺寸(2)量钢(3)维，度Diode 二极管Dipole domain 偶极畴Dipole layer 偶极层Direct-coupling 直接耦合Direct-gap semiconductor 直接带隙半导体Direct transition 直接跃迁Directional antenna 定向天线Discharge 放电Discrete component 分立元件Disorder 无序的Display 显示器Dissipation 耗散Dissolution 溶解Distribution 分布Distributed capacitance 分布电容Distributed model 分布模型Displacement 位移Dislocation 位错Domain 畴Donor 施主Donor exhaustion 施主耗尽Dopant 掺杂剂Doped semiconductor 掺杂半导体Doping concentration 掺杂浓度Dose 剂量Double-diffusive MOS(DMOS)双扩散MOS Drift 漂移Drift field 漂移电场Drift mobility 迁移率Dry etching 干法腐蚀Dry/wet oxidation 干/湿法氧化Dose 剂量Dual-polarization 双偏振，双极化Duty cycle 工作周期Dual-in-line package （DIP）双列直插式封装Dynamics 动态Dynamic characteristics 动态属性Dynamic impedance 动态阻抗Early effect 厄利效应Early failure 早期失效Effect 效应Effective mass 有效质量Electric Erase Programmable Read Only Memory(E2PROM) 电可擦除只读存储器Electrode 电极Electromigration 电迁移Electron affinity 电子亲和势Electron-beam 电子束Electroluminescence 电致发光Electron gas 电子气Electron trapping center 电子俘获中心Electron Volt (eV) 电子伏Electro-optical 光电的Electrostatic 静电的Element 元素/元件/配件Elemental semiconductor 元素半导体Ellipse 椭圆Emitter 发射极Emitter-coupled logic 发射极耦合逻辑Emitter-coupled pair 发射极耦合对Emitter follower 射随器Empty band 空带Emitter crowding effect 发射极集边（拥挤）效应Endurance test =life test 寿命测试Energy state 能态Energy momentum diagram 能量-动量(E-K)图Enhancement mode 增强型模式Enhancement MOS 增强性MOSEnteric (低)共溶的Environmental test 环境测试Epitaxial 外延的Epitaxial layer 外延层Epitaxial slice 外延片Epoxy 环氧的Equivalent circuit 等效电路Equilibrium majority /minority carriers 平衡多数/少数载流子Equipment 设备Erasable Programmable ROM (EPROM)可搽取（编程）存储器Erbium laser 掺铒激光器Error function complement 余误差函数Etch 刻蚀Etchant 刻蚀剂Etching mask 抗蚀剂掩模Excess carrier 过剩载流子Excitation energy 激发能Excited state 激发态Exciton 激子Exponential 指数的Extrapolation 外推法Extrinsic 非本征的Extrinsic semiconductor 杂质半导体Fabry-Perot amplifier 法布里-珀罗放大器Face - centered 面心立方Fall time 下降时间Fan-in 扇入Fan-out 扇出Fast recovery 快恢复Fast surface states 快表面态Feedback 反馈Fermi level 费米能级Femi potential 费米势Fiber optic 光纤Field effect transistor 场效应晶体管Field oxide 场氧化层Figure of merit 品质因数Filter 滤波器Filled band 满带Film 薄膜Fine pitch 细节距Flash memory 闪存存储器Flat band 平带Flat pack 扁平封装Flatness 平整度Flexible 柔性的Flicker noise 闪烁（变）噪声Flip-chip 倒装芯片Flip- flop toggle 触发器翻转Floating gate 浮栅Fluoride etch 氟化氢刻蚀Focal plane 焦平面Forbidden band 禁带Formulation 列式，表达Forward bias 正向偏置Forward blocking /conducting 正向阻断/导通Free electron 自由电子Frequency deviation noise 频率漂移噪声Frequency response 频率响应Function 函数Gain 增益Gallium-Arsenide(GaAs) 砷化镓Gallium Nitride 氮化镓Gate 门、栅、控制极Gate oxide 栅氧化层Gate width 栅宽Gauss（ian）高斯Gaussian distribution profile 高斯掺杂分布Generation-recombination 产生-复合Geometries 几何尺寸Germanium(Ge) 锗Gold 金Graded 缓变的Graded (gradual) channel 缓变沟道Graded junction 缓变结Grain 晶粒Gradient 梯度Graphene 石墨烯Grating 光栅Green laser 绿光激光器Ground 接地Grown junction 生长结Guard ring 保护环Guide wave 导波波导Gunn - effect 狄氏效应Gyroscope 陀螺仪Hardened device 辐射加固器件Harmonics 谐波Heat diffusion 热扩散Heat sink 散热器、热沉Heavy/light hole band 重/轻空穴带Hell - effect 霍尔效应Hertz 赫兹Heterojunction 异质结Heterojunction structure 异质结结构Heterojunction Bipolar Transistor（HBT）异质结双极型晶体High field property 高场特性High-performance MOS(H-MOS)高性能MOS器件High power 大功率Hole 空穴Homojunction 同质结Horizontal epitaxial reactor 卧式外延反应器Hot carrier 热载流子Hybrid integration 混合集成Illumination (1)照明(2)照明学Image - force 镜象力Impact ionization 碰撞电离Impedance 阻抗Imperfect structure 不完整结构Implantation dose 注入剂量Implanted ion 注入离子Impurity 杂质Impurity scattering 杂志散射Inch 英寸Incremental resistance 电阻增量（微分电阻）In-contact mask 接触式掩模Index of refraction 折射率Indium 铟Indium tin oxide (ITO) 铟锡氧化物Inductance 电感Induced channel 感应沟道Infrared 红外的Injection 注入Input power 输入功率Insertion loss 插入损耗Insulator 绝缘体Insulated Gate FET(IGFET) 绝缘栅FET Integrated injection logic 集成注入逻辑Integration 集成、积分Integrated Circuit 集成电路Interconnection 互连Interconnection time delay 互连延时Interdigitated structure 交互式结构Interface 界面Interference 干涉International system of unions 国际单位制Internally scattering 谷间散射Interpolation 内插法Intrinsic 本征的Intrinsic semiconductor 本征半导体Inverse operation 反向工作Inversion 反型Inverter 倒相器Ion 离子Ion beam 离子束Ion etching 离子刻蚀Ion implantation 离子注入Ionization 电离Ionization energy 电离能Irradiation 辐照Isolation land 隔离岛Isotropic 各向同性Junction FET(JFET) 结型场效应管Junction isolation 结隔离Junction spacing 结间距Junction side-wall 结侧壁Laser 激光器Laser diode 激光二极管Latch up 闭锁Lateral 横向的Lattice 晶格Layout 版图Lattice binding/cell/constant/defect/distortion 晶格结合力/晶胞/晶格/晶格常熟/晶格缺陷/晶格畸变Lead 铅Leakage current （泄）漏电流Life time 寿命linearity 线性度Linked bond 共价键Liquid Nitrogen 液氮Liquid－phase epitaxial growth technique 液相外延生长技术Lithography 光刻Light Emitting Diode(LED) 发光二极管Linearity 线性化Liquid 液体Lock in 锁定Longitudinal 纵向的Long life 长寿命Lumped model 集总模型Magnetic 磁的Majority carrier 多数载流子Mask 掩膜板，光刻板Mask level 掩模序号Mask set 掩模组Mass - action law 质量守恒定律Master-slave D flip-flop 主从D 触发器Matching 匹配Material 材料Maxwell 麦克斯韦Mean free path 平均自由程Mean time before failure (MTBF) 平均工作时间Mechanical 机械的Membrane (1)薄腊，膜片(2)隔膜Megeto - resistance 磁阻Mesa 台面MESFET-Metal Semiconductor 金属半导体FET Metalorganic Chemical Vapor Deposition MOCVD 金属氧化物化学汽相淀积Metallization 金属化Metal oxide semiconductor (MOS)金属氧化物半导体MeV 兆电子伏Microelectronic technique 微电子技术Microelectronics 微电子学Microelectromechanical System (MEMS) 微电子机械系统Microwave 微波Millimeterwave 毫米波Minority carrier 少数载流子Misfit 失配Mismatching 失配Mobility 迁移率Module 模块Modulate 调制Molecular crystal 分子晶体Monolithic IC 单片MOSFET 金属氧化物半导体场效应晶体管Mount 安装Multiplication 倍增Modulator 调制Multi-chip IC 多芯片ICMulti-chip module(MCM) 多芯片模块Multilayer 多层Multiplication coefficient 倍增因子Multiplexer 复用器Multiplier 倍增器Naked chip 未封装的芯片（裸片）Nanometer 纳米Nanotechnology 纳米技术Negative feedback 负反馈Negative resistance 负阻Negative-temperature-coefficient负温度系数Nesting 套刻Noise figure 噪声系数Nonequilibrium 非平衡Nonvolatile 非挥发（易失）性Normally off/on 常闭/开Nuclear 核Numerical analysis 数值分析Occupied band 满带Offset 偏移、失调On standby 待命状态Ohmic contact 欧姆接触Open circuit 开路Operating point 工作点Operating bias 工作偏置Operational amplifier (OPAMP)运算放大器Optical photon 光子Optical quenching 光猝灭Optical transition 光跃迁Optical-coupled isolator 光耦合隔离器Organic semiconductor 有机半导体Orientation 晶向、定向Oscillator 振荡器Outline 外形Out-of-contact mask 非接触式掩模Output characteristic 输出特性Output power 输出功率Output voltage swing 输出电压摆幅Overcompensation 过补偿Over-current protection 过流保护Over shoot 过冲Over-voltage protection 过压保护Overlap 交迭Overload 过载Oscillator 振荡器Oxide 氧化物Oxidation 氧化Oxide passivation 氧化层钝化Package 封装Pad 压焊点Parameter 参数Parasitic effect 寄生效应Parasitic oscillation 寄生振荡Pass band 通带Passivation 钝化Passive component 无源元件Passive device 无源器件Passive surface 钝化界面Parasitic transistor 寄生晶体管Pattern 图形Payload 有效载荷Peak-point voltage 峰点电压Peak voltage 峰值电压Permanent-storage circuit 永久存储电路Period 周期Permeable - base 可渗透基区Phase-lock loop 锁相环Phase drift 相移Phonon spectra 声子谱Photo conduction 光电导Photo diode 光电二极管Photoelectric cell 光电池Photoelectric effect 光电效应Photonic devices 光子器件Photolithographic process 光刻工艺Photoluminescence 光致发光Photo resist （光敏）抗腐蚀剂Photo mask 光掩模Piezoelectric effect 压电效应Pin 管脚Pinch off 夹断Pinning of Fermi level 费米能级的钉扎（效应）Planar process 平面工艺Planar transistor 平面晶体管Plasma 等离子体Plane 平面的Plasma 等离子体Plate 板电路板P-N junction pn结Poisson equation 泊松方程Point contact 点接触Polarity 极性Polycrystal 多晶Polymer semiconductor 聚合物半导体Poly-silicon 多晶硅Positive 正的Potential (电)势Potential barrier 势垒Potential well 势阱Power electronic devices电力电子器件Power dissipation 功耗Power transistor 功率晶体管Preamplifier 前置放大器Primary flat 主平面Print-circuit board(PCB) 印制电路板Probability 几率Probe 探针Procedure 工艺Process 工艺Projector 投影仪Propagation delay 传输延时Proton 质子Proximity effect 邻近效应Pseudopotential method 赝势法Pump 泵浦Punch through 穿通Pulse triggering/modulating 脉冲触发/调制Pulse Widen Modulator(PWM) 脉冲宽度调制Punchthrough 穿通Push-pull stage 推挽级Q Q值Quality factor 品质因子Quantization 量子化Quantum 量子Quantum efficiency 量子效应Quantum mechanics 量子力学Quasi – Fermi－level 准费米能级Quartz 石英Radar 雷达Radiation conductivity 辐射电导率Radiation damage 辐射损伤Radiation flux density 辐射通量密度Radiation hardening 辐射加固Radiation protection 辐射保护Radiative - recombination 辐照复合Radio 无线电射电射频Radio-frequency RF 射频Raman 拉曼Random 随机Range 测距Radio 比率系数Ray 射线Reactive sputtering source 反应溅射源Real time 实时Receiver 接收机Recombination 复合Recovery diode 恢复二极管Record 记录Recovery time 恢复时间Rectifier 整流器（管）Rectifying contact 整流接触Red light 红光Reference 基准点基准参考点Refractive index 折射率Register 寄存器Regulate 控制调整Relative 相对的Relaxation 驰豫Relaxation lifetime 驰豫时间Relay 中继Reliability 可靠性Remote 远程Repeatability 可重复性Reproduction 重复制造Residual current 剩余电流Resonance 谐振Resin 树脂Resistance 电阻Resistor 电阻器Resistivity 电阻率Regulator 稳压管（器）Resolution 分辨率Response time 响应时间Return signal 回波信号Reverse 反向的Reverse bias 反向偏置Ribbon 光纤带Ridge waveguide 脊形波导Ring laser 环形激光器Rotary wave 旋转波Run 运行Sampling circuit 取样电路Sapphire 蓝宝石（Al2O3）Satellite valley 卫星谷Saturated current range 电流饱和区Scan 扫描Scaled down 按比例缩小Scattering 散射Schematic layout 示意图，简图Schottky 肖特基Schottky barrier 肖特基势垒Schottky contact 肖特基接触Screen 筛选Scribing grid 划片格Secondary flat 次平面Seed crystal 籽晶Segregation 分凝Selectivity 选择性Self aligned 自对准的Self diffusion 自扩散Semiconductor 半导体Semiconductor laser半导体激光器Semiconductor-controlled rectifier 半导体可控硅Sensitivity 灵敏度Sensor 传感器Serial 串行/串联Series inductance 串联电感Settle time 建立时间Sheet resistance 薄层电阻Shaping 成型Shield 屏蔽Shifter 移相器Short circuit 短路Shot noise 散粒噪声Shunt 分流Sidewall capacitance 边墙电容Signal 信号Silica glass 石英玻璃Silicon 硅Silicon carbide 碳化硅Silicon dioxide (SiO2) 二氧化硅Silicon Nitride(Si3N4) 氮化硅Silicon On Insulator 绝缘体上硅Silver whiskers 银须Simple cubic 简立方Simulation 模拟Single crystal 单晶Sink 热沉Sinter 烧结Skin effect 趋肤效应Slot 槽隙Slow wave 慢波Smooth 光滑的Subthreshold 亚阈值的Solar battery/cell 太阳能电池Solid circuit 固体电路Solid Solubility 固溶度Solution 溶液Sonband 子带Source 源极Source follower 源随器Space charge 空间电荷Space Craft 宇宙飞行器Spacing 间距Specific heat(PT) 比热Spectral 光谱Spectrum 光谱(复数)Speed-power product 速度功耗乘积Spherical 球面的Spin 自旋Split 分裂Spontaneous emission 自发发射Spot 斑点Spray 喷涂Spreading resistance 扩展电阻Sputter 溅射Square root 平方根Stability 稳定性Stacking fault 层错Standard 标准的Standing wave 驻波State-of-the-art 最新技术Static characteristic 静态特性Statistical analysis 统计分析Steady state 稳态Step motor 步进式电动机Stimulated emission 受激发射Stimulated recombination 受激复合Stopband 阻带Storage time 存储时间Stress 应力Stripline 带状线Subband 次能带Sublimation 升华Submillimeter 亚毫米波Substrate 衬底Substitutional 替位式的Superconductor 超导(电)体Superlattice 超晶格Supply 电源Surface mound表面安装Surge capacity 浪涌能力Switching time 开关时间Switch 开关Synchronizer 同步器，同步装置Synthetic-aperture 合成孔径System 系统Technical 技术的，工艺的Telecommunication 远距通信，电信Telescope 望远镜Terahertz 太赫兹Terminal 终端Template 模板Temperature 温度Tensor 张量Test 测试试验Thermal activation 热激发Thermal conductivity 热导率Thermal equilibrium 热平衡Thermal Oxidation 热氧化Thermal resistance 热阻Thermal sink 热沉Thermal velocity 热运动Thick- film technique 厚膜技术Thin- film hybrid IC 薄膜混合集成电路Thin-Film Transistor(TFT) 薄膜晶体Three dimension 三维Threshold 阈值Through Silicon Via 硅通孔Thyistor 晶闸管Time resolution 时间分辨率Tolerance 公差T/R module 发射/接收模块Transconductance 跨导Transfer characteristic 转移特性Transfer electron 转移电子Transfer function 传输函数Transient 瞬态的Transistor aging(stress) 晶体管老化Transit time 渡越时间Transition 跃迁Transition-metal silica 过度金属硅化物Transition probability 跃迁几率Transition region 过渡区Transmissivity 透射率Transmitter 发射机Transceiver 收发机Transport 输运Transverse 横向的Trap 陷阱Trapping 俘获Trapped charge 陷阱电荷Travelling wave 行波Trigger 触发Trim 调配调整Triple diffusion 三重扩散Tolerance 容差Tube 管子电子管Tuner 调节器Tunnel(ing) 隧道（穿）Tunnel current 隧道电流Turn - off time 关断时间Ultraviolet 紫外的Ultrabright 超亮的Ultrasonic 超声的Underfilling 下填充Undoped 无掺杂Unijunction 单结的Unipolar 单极的Unit cell 原（元）胞Unity- gain frequency 单位增益频率Unilateral-switch 单向开关Vacancy 空位Vacuum 真空Valence(value) band 价带Value band edge 价带顶Valence bond 价键Vapour phase 汽相Varactor 变容管Variable 可变的Vector 矢量Vertical 垂直的Vibration 振动Visible light 可见光Voltage 电压Volt 伏特Wafer 晶片Watt 瓦Wave guide 波导Wavelength 波长Wave-particle duality 波粒二相性Wear-out 烧毁Wetting 浸润Wideband 宽禁带Wire 引线Wire routing 布线Work function 功函数Worst-case device 最坏情况器件X-ray X射线Yield 成品率Zinc 锌。
