IRF830AL中文资料

9011,9012,9013,9014,8050,8550三极管的区别9011 NPN 30V 30mA 400mW 150MHz 放大倍数20-809012 PNP 50V 500mA 600mW 低频管放大倍数30-909013 NPN 20V 625mA 500mW 低频管放大倍数40-1109014 NPN 45V 100mA 450mW 150MHz 放大倍数20-908050 NPN 25V 700mA 200mW 150MHz 放大倍数30-1008550 PNP 40V 1500mA 1000mW 200MHz 放大倍数40-140详情如下：90系列三极管参数90系列三极管大多是以90字为开头的，但也有以ST90、C或A90、S90、SS90、UTC90开头的，它们的特性及管脚排列都是一样的。

9011 结构：NPN集电极-发射极电压30V集电极-基电压50V射极-基极电压5V集电极电流0.03A耗散功率0.4W结温150℃特怔频率平均370MHZ放大倍数：D28-45 E39-60 F54-80 G72-108 H97-146 I132-1989012 结构：PNP集电极-发射极电压-30V集电极-基电压-40V射极-基极电压-5V集电极电流0.5A耗散功率0.625W结温150℃特怔频率最小150MHZ放大倍数：D64-91 E78-112 F96-135 G122-166 H144-220 I190-3009013 结构：NPN集电极-发射极电压25V集电极-基电压45V射极-基极电压5V集电极电流0.5A耗散功率0.625W结温150℃特怔频率最小150MHZ放大倍数：D64-91 E78-112 F96-135 G122-166 H144-220 I190-3009014 结构：NPN集电极-发射极电压45V集电极-基电压50V射极-基极电压5V集电极电流0.1A耗散功率0.4W结温150℃特怔频率最小150MHZ放大倍数：A60-150 B100-300 C200-600 D400-10009015 结构：PNP集电极-发射极电压-45V集电极-基电压-50V射极-基极电压-5V集电极电流0.1A耗散功率0.45W结温150℃特怔频率平均300MHZ放大倍数：A60-150 B100-300 C200-600 D400-10009016 结构：NPN集电极-发射极电压20V集电极-基电压30V射极-基极电压5V集电极电流0.025A耗散功率0.4W结温150℃特怔频率平均620MHZ放大倍数：D28-45 E39-60 F54-80 G72-108 H97-146 I132-1989018 结构：NPN集电极-发射极电压15V集电极-基电压30V射极-基极电压5V集电极电流0.05A耗散功率0.4W结温150℃特怔频率平均620MHZ放大倍数：D28-45 E39-60 F54-80 G72-108 H97-146 I132-198三极管85508550是一种常用的普通三极管。

部分分立元件库元件名称及中英对照AND ------------------------------------与门ANTENNA --------------------------------天线BA TTERY --------------------------------直流电源BELL -----------------------------------铃,钟BVC ------------------------------------同轴电缆接插件BRIDEG 1 -------------------------------整流桥(二极管) BRIDEG 2 -------------------------------整流桥(集成块) BUFFER--------------------------------- 缓冲器BUZZER----------------------------------蜂鸣器CAP ------------------------------------电容CAPACITOR ------------------------------电容CAPACITOR POL --------------------------有极性电容CAPV AR ---------------------------------可调电容CIRCUIT BREAKER ------------------------熔断丝COAX -----------------------------------同轴电缆CON ------------------------------------插口CRYSTAL --------------------------------晶体整荡器DB --------------------------------------并行插口DIODE ---------------------------------二极管DIODE SCHOTTKY ------------------------稳压二极管DIODE V ARACTOR ------------------------变容二极管DPY_3-SEG---------------------------- 3段LEDDPY_7-SEG---------------------------- 7段LEDDPY_7-SEG_DP -------------------------7段LED(带小数点) ELECTRO ------------------------------电解电容FUSE ----------------------------------熔断器INDUCTOR -----------------------------电感INDUCTOR IRON -------------------------带铁芯电感INDUCTOR3 -----------------------------可调电感JFET N -------------------------------N沟道场效应管JFET P --------------------------------P沟道场效应管LAMP ----------------------------------灯泡LAMP NEDN -----------------------------起辉器LED -----------------------------------发光二极管METER ---------------------------------仪表MICROPHONE ----------------------------麦克风MOSFET --------------------------------MOS管MOTOR AC -----------------------------交流电机MOTOR SERVO --------------------------伺服电机NAND ----------------------------------与非门NOR ----------------------------------或非门NOT -----------------------------------非门NPN -----------------------------------NPN----三极管NPN-PHOTO ------------------------------感光三极管OPAMP ----------------------------------运放OR ------------------------------------或门PHOTO ---------------------------------感光二极管PNP -----------------------------------三极管NPN DAR ----------------------------NPN三极管PNP DAR ----------------------------PNP三极管POT ----------------------------滑线变阻器PELAY-DPDT---------------------------- 双刀双掷继电器RES1.2 ----------------------------电阻RES3.4 ----------------------------可变电阻RESISTOR BRIDGE ? ----------------------------桥式电阻RESPACK ? ----------------------------电阻SCR ----------------------------晶闸管PLUG ?---------------------------- 插头PLUG AC FEMALE---------------------------- 三相交流插头SOCKET ? ----------------------------插座SOURCE CURRENT---------------------------- 电流源SOURCE VOLTAGE ----------------------------电压源SPEAKER ----------------------------扬声器SW ? ----------------------------开关SW-DPDY ?---------------------------- 双刀双掷开关SW-SPST ? ----------------------------单刀单掷开关SW-PB ----------------------------按钮THERMISTOR ----------------------------电热调节器TRANS1 ----------------------------变压器TRANS2 ----------------------------可调变压器TRIAC ?---------------------------- 三端双向可控硅TRIODE ? ----------------------------三极真空管V ARISTOR ----------------------------变阻器ZENER ? ----------------------------齐纳二极管DPY_7-SEG_D---------------------------- 数码管SW-PB ---------------------------- 开关7805----------------------------------LM7805CT。

Power MOSFETFEATURES•Dynamic dV/dt rating•Repetitive avalanche rated •Fast switching•Ease of paralleling•Simple drive requirements•Material categorization: for definitions of compliance please see /doc?99912Note*This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for detailsDESCRIPTIONThird generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry.Notesa.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)b.V DD = 50 V, starting T J = 25 °C, L = 24 mH, R g = 25 Ω, I AS = 4.5 A (see fig. 12)c.I SD ≤ 4.5 A, dI/dt ≤ 75 A/μs, V DD ≤ V DS , T J ≤ 150 °Cd. 1.6 mm from casePRODUCT SUMMARYV DS (V)500R DS(on) (Ω)V GS = 10 V1.5Q g max. (nC)38Q gs (nC) 5.0Q gd (nC)22ConfigurationSingle N-Channel MO S FETGSTO-220ABGDSAvailableAvailableORDERING INFORMATIONPackage TO-220AB Lead (Pb)-freeIRF830PbF Lead (Pb)-free and halogen-freeIRF830PbF-BE3ABSOLUTE MAXIMUM RATINGS (T C = 25 °C, unless otherwise noted)PARAMETER S YMBOL LIMIT UNIT Drain-source voltage V DS500VGate-source voltage V GS ± 20 Continuous drain current V GS at 10 VT C = 25 °C I D4.5A T C = 100 °C2.9Pulsed drain current a I DM 18Linear derating factor0.59W/°C Single pulse avalanche energy b E AS 280mJ Repetitive avalanche current a I AR 4.5 A Repetitive avalanche energy a E AR 7.4mJ Maximum power dissipation T C = 25 °CP D 74WPeak diode recovery dV/dt cdV/dt 3.5V/ns Operating junction and storage temperature range T J , T stg-55 to +150°C Soldering recommendations (peak temperature) d For 10 s 300Mounting torque6-32 or M3 screw10 lbf · in1.1N · mNotesa.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)b.Pulse width ≤ 300 μs; duty cycle ≤ 2 %THERMAL RESISTANCE RATINGSPARAMETER S YMBOL TYP.MAX.UNITMaximum junction-to-ambient R thJA -62°C/W Case-to-sink, flat, greased surface R thCS 0.50-Maximum junction-to-case (drain)R thJC- 1.7TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)Fig. 1 - Typical Output Characteristics, T C = 25 °CFig. 2 - Typical Output Characteristics, T C = 150 °CFig. 3 - Typical Transfer CharacteristicsFig. 4 - Normalized On-Resistance vs. TemperatureFig. 5 - Typical Capacitance vs. Drain-to-Source VoltageFig. 6 - Typical Gate Charge vs. Drain-to-Source Voltage91063_0110110010-1100101V DS , Drain-to-Source Voltage (V)I D , D r a i n C u r r e n t (A )91063_0210110010-1100101V DS , Drain-to-Source Voltage (V)I D , D r a i n C u r r e n t (A )91063_0310110010-1I D , D r a i n C u r r e n t (A )V GS , Gate-to-Source Voltage (V)5678910491063_043.00.00.51.01.52.02.5- 60- 40- 20020406080100120140160T J , Junction Temperature (°C)R D S (o n ), D r a i n -t o -S o u r c e O n R e s i s t a n c e (N o r m a l i z e d )91063_051500125010007500250500100101C a p a c i t a n c e (p F )V DS , Drain-to-Source Voltage (V)91063_06Q G , T otal Gate Charge (nC)V G S , G a t e -t o -S o u r c e V o l t a g e(V )201612804840322416Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 8 - Maximum Safe Operating AreaFig. 9 - Maximum Drain Current vs. Case TemperatureFig. 10a - Switching Time Test CircuitFig. 10b - Switching Time WaveformsFig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case91063_07101100V SD , Source-to-Drain Voltage (V)I S D , R e v e r s e D r a i n C u r r e n t (A )0.41.21.00.80.691063_08V DS , Drain-to-Source Voltage (V)I D , D r a i n C u r r e n t (A )10-21020.1250.125125102511010210310491063_09I D , D r a i n C u r r e n t (A )T C , Case T emperature (°C)0.01.02.03.04.05.0251501251007550RV DDV V d(on)rd(off)f1091063_1110.110-210-510-410-310-20.1110t 1, Rectangular Pulse Duration (S)T h e r m a l R e s p o n s e (Z t h J C )Fig. 12a - Unclamped Inductive Test CircuitFig. 12b - Unclamped Inductive WaveformsFig. 12c - Maximum Avalanche Energy vs. Drain CurrentFig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit+-V DDI ASV 91063_12c600100200300400500251501251007550Starting T J , Junction Temperature (°C)E A S , S i n g l e P u l s e E n e r g y (m J )V GCharge10 VV DSCurrent sampling resistorsFig. 14 - For N-ChannelVishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several q ualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see /ppg?91063.voltageReverDriver gate drivePeak Dio d e Recovery d V/d t Test CircuitV DDNotea. V GS = 5 V for logic level device sPackage InformationVishay SiliconixTO-220-1Note•M* = 0.052 inches to 0.064 inches (dimension including protrusion), heatsink hole for HVMLIMETERSINCHESMIN.MAX.MIN.MAX.A 4.24 4.650.1670.183b 0.69 1.020.0270.040b(1) 1.14 1.780.0450.070c 0.360.610.0140.024D 14.3315.850.5640.624E 9.9610.520.3920.414e 2.41 2.670.0950.105e(1) 4.88 5.280.1920.208F 1.14 1.400.0450.055H(1) 6.10 6.710.2400.264J(1) 2.41 2.920.0950.115L 13.3614.400.5260.567L(1) 3.33 4.040.1310.159Ø P 3.53 3.940.1390.155Q2.543.000.1000.118ECN: E21-0621-Rev. D, 04-Nov-2021 DWG: 6031Legal Disclaimer Notice VishayDisclaimerALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROV E RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.V ishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product.Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability.Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer's technical experts. Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein.Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of any of the products, services or opinions of the corporation, organization or individual associated with the third-party website. Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website or for that of subsequent links.Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.© 2022 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED。

Value Units A V mJ A mJ V/ns W W/A V TO-220F1.Gate2. Drain3. Source321oC5004.62.9326474.64.43.5440.3530TRADEMARKSACEx™CoolFET™CROSSVOLT™E 2CMOS TM FACT™FACT Quiet Series™FAST ®FASTr™GTO™HiSeC™The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.LIFE SUPPORT POLICYFAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORTDEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROV AL OF FAIRCHILD SEMICONDUCTOR CORPORA TION.As used herein:ISOPLANAR™MICROWIRE™POP™PowerTrench™QS™Quiet Series™SuperSOT™-3SuperSOT™-6SuperSOT™-8TinyLogic™1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant intothe body, or (b) support or sustain life, or (c) whosefailure to perform when properly used in accordancewith instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.2. A critical component is any component of a lifesupport device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status DefinitionAdvance InformationPreliminary No Identification Needed Obsolete This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.This datasheet contains preliminary data, andsupplementary data will be published at a later date.Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor.The datasheet is printed for reference information only.Formative or In DesignFirst ProductionFull ProductionNot In ProductionDISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY , FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.UHC™VCX™。

5004.5Value Units V TO-2201.Gate2. Drain3. Source321IRF8301 &+$11(/026)(7IRF8301 &+$11(/026)(7TRADEMARKSACEx™CoolFET™CROSSVOLT™E 2CMOS TM FACT™FACT Quiet Series™FAST ®FASTr™GTO™HiSeC™The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.LIFE SUPPORT POLICYFAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORTDEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROV AL OF FAIRCHILD SEMICONDUCTOR CORPORA TION.As used herein:ISOPLANAR™MICROWIRE™POP™PowerTrench™QS™Quiet Series™SuperSOT™-3SuperSOT™-6SuperSOT™-8TinyLogic™1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant intothe body, or (b) support or sustain life, or (c) whosefailure to perform when properly used in accordancewith instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.2. A critical component is any component of a lifesupport device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.PRODUCT STATUS DEFINITIONS Definition of TermsDatasheet Identification Product Status Definition Advance InformationPreliminary No Identification Needed Obsolete This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.This datasheet contains preliminary data, andsupplementary data will be published at a later date.Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor.The datasheet is printed for reference information only.Formative or In DesignFirst ProductionFull ProductionNot In ProductionDISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY , FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.。

irf830参数IRF830参数IRF830是一款N沟道MOSFET晶体管，属于TO-220封装，常用于开关电源、电机驱动等领域。

下面将对IRF830的参数进行详细介绍。

1. 电气特性1.1 静态特性静态特性是指在恒定条件下测量的特性。

以下是IRF830的静态特性：- 阈值电压：2V-4V- 最大漏极电流：4.5A- 最大漏极功率：75W- 漏极到源极电阻：0.77Ω- 端子电容：400pF1.2 动态特性动态特性是指在变化条件下测量的特性。

以下是IRF830的动态特性：- 输入电容：1800pF- 输出电容：270pF- 开通延迟时间：15ns- 关断延迟时间：50ns- 开通上升时间：20ns- 关断下降时间：55ns2. 尺寸参数以下是IRF830的尺寸参数：- TO220封装尺寸（mm）: 10 x 15 x 4.5 - 引脚间距（mm）: 2.543. 热学参数以下是IRF830的热学参数：- 热阻：62°C/W- 工作温度范围：-55°C ~ 175°C4. 应用IRF830常用于以下应用：- 电机驱动- 开关电源- 电子灯光控制器- 高速开关5. 注意事项使用IRF830时需要注意以下事项：- 静电保护：MOSFET晶体管非常敏感，需要注意静电保护。

- 热量散发：IRF830的热阻相对较高，需要注意热量散发问题。

- 正确接线：需要正确连接引脚，避免损坏晶体管。

结论IRF830是一款N沟道MOSFET晶体管，具有良好的静态和动态特性。

它广泛应用于电机驱动、开关电源、电子灯光控制器等领域。

在使用时需要注意静电保护、热量散发和正确接线等问题。

irf830参数及代换
IRF830是一款N沟道功率MOSFET，常用于开关电路和电源控制应用。

以下是IRF830的一些主要参数：
- 额定电源电压：500V
- 额定电流：4.5A
- 管脚电压：30V
- 引脚配置：D（Drain导体）-G（Gate栅极）-S（Source源极）
- 最大导通电阻：0.77Ω
- 最大功率耗散：2.0W
- 栅极电荷（最大）：48nC
- 栅极阈值电压（最小）：2.0V
- 开启延迟时间（最大）：10ns
- 关闭延迟时间（最大）：19ns
代换参数可以根据具体需求和应用来选择，以下是一些常用代换参数：
- 替代MOSFET型号：IRF840、IRF840A、IRF840B
- 替代PNP晶体管：MPSA42、MPSA92
- 替代NPN晶体管：MPSA14、MPSA44
- 替代功率开关：IRF520、IRF540、IRFZ44
请注意，在进行代换时应仔细核对引脚配置和应用需求，以确保选用的替代型号
适配您的设计。

9011,9012,9013,9014,8050,8550三极管的区别9011 NPN 30V 30mA 400mW 150MHz 放大倍数20-809012 PNP 50V 500mA 600mW 低频管放大倍数30-909013 NPN 20V 625mA 500mW 低频管放大倍数40-1109014 NPN 45V 100mA 450mW 150MHz 放大倍数20-908050 NPN 25V 700mA 200mW 150MHz 放大倍数30-1008550 PNP 40V 1500mA 1000mW 200MHz 放大倍数40-140详情如下：90系列三极管参数90系列三极管大多是以90字为开头的，但也有以ST90、C或A90、S90、SS90、UTC90开头的，它们的特性及管脚排列都是一样的。

9011 结构：NPN集电极-发射极电压30V集电极-基电压50V射极-基极电压5V集电极电流0.03A耗散功率0.4W结温150℃特怔频率平均370MHZ放大倍数：D28-45 E39-60 F54-80 G72-108 H97-146 I132-1989012 结构：PNP集电极-发射极电压-30V集电极-基电压-40V射极-基极电压-5V集电极电流0.5A耗散功率0.625W结温150℃特怔频率最小150MHZ放大倍数：D64-91 E78-112 F96-135 G122-166 H144-220 I190-3009013 结构：NPN集电极-发射极电压25V集电极-基电压45V射极-基极电压5V集电极电流0.5A耗散功率0.625W结温150℃特怔频率最小150MHZ放大倍数：D64-91 E78-112 F96-135 G122-166 H144-220 I190-3009014 结构：NPN集电极-发射极电压45V集电极-基电压50V射极-基极电压5V集电极电流0.1A耗散功率0.4W结温150℃特怔频率最小150MHZ放大倍数：A60-150 B100-300 C200-600 D400-10009015 结构：PNP集电极-发射极电压-45V集电极-基电压-50V射极-基极电压-5V集电极电流0.1A耗散功率0.45W结温150℃特怔频率平均300MHZ放大倍数：A60-150 B100-300 C200-600 D400-10009016 结构：NPN集电极-发射极电压20V集电极-基电压30V射极-基极电压5V集电极电流0.025A耗散功率0.4W结温150℃特怔频率平均620MHZ放大倍数：D28-45 E39-60 F54-80 G72-108 H97-146 I132-1989018 结构：NPN集电极-发射极电压15V集电极-基电压30V射极-基极电压5V集电极电流0.05A耗散功率0.4W结温150℃特怔频率平均620MHZ放大倍数：D28-45 E39-60 F54-80 G72-108 H97-146 I132-198三极管85508550是一种常用的普通三极管。

AL-830A键盘说明书说明:AL-830A中文液晶显示键盘用于配合AL-6480C主机使用。

AL-830A主要功能及性能指标1．主要功能●中文液晶显示，显示控制设备的各类信息，包括报警、状态、编程等。

●1个电源指示灯（绿色），显示该键盘的电源状态。

●1个布防指示灯（红色），显示该键盘是否在布防状态。

●1个状态指示灯（红色），显示该键盘是否在编程状态和欠压指示。

●本身带有一个蜂鸣器，用来操作提示和报警。

●本身带有一个继电器报警输出。

●8个自学码遥控器，支持“布防”、“撤防”、“留守布防”。

2．电性能指●输入电源DC 13.8V●静态耗电50mA●报警状态120mA●报警输出口 DC12V 800mA●外观尺寸138 x 93 x 26mm●无线参数315MHz，编码器的震荡电阻为4.7M，2262编码模式●键盘端口总线总长度不得大于1200m一、系统配置及连线说明1. AL-830A接线端口定义及系统基本配置2. AL-830A与警号的连接作为就地报警的主要设备—警号，AL-830A也为其留有接口，因为采用继电器控制，可接大功率的警号。

警号的（+）极与+12V电源的（+）级连接，（-）级与AL-830A的“警号输出”的其中一根线连接，同时将“警号输出”的另外一根线与电源地（-）连接。

3. AL-830A无线自学遥控器AL-830A支持8个遥控器，每个遥控器可以支持“布防”、“留守布防”、“撤防”三种功能键，通过自学码来实现每个遥控器的每个键的编码。

每个遥控器的每个按键的编码都应该唯一的。

无线参数为，频率315MHz，探测器的编码方式是2262，它的振荡电阻为4.7M欧姆。

遥控器可以通过编程来实现对主机或者任意分区的撤布防控制。

通过编程可以更改或遥控器每个键的无线编码，具体编程请参考编程章节。

按键图标定义：布防（进入）撤防（退出）旁路功能二、AL-830A编程说明1. 按住[功能]键3秒以上2．输入键盘编程密码：6位数.说明：出厂缺省值键盘编程密码为[1][2][3][4][5][6]。

IRFP340ABV DSS = 400 V R DS(on) = 0.55ΩI D = 11 A40011744±305531116.24.01621.3- 55 to +1503000.77--40--0.24--♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge♦ Extended Safe Operating Area♦ Lower Leakage Current: 10µA (Max.) @ V DS = 400V ♦ Lower R DS(ON): 0.437Ω (Typ.)$GYDQFHG 3RZHU 026)(7Thermal ResistanceJunction-to-Case Case-to-Sink Junction-to-AmbientR θJC R θCS R θJA°C/W Characteristic Max.UnitsSymbol Typ.FEATURESAbsolute Maximum RatingsDrain-to-Source VoltageContinuous Drain Current (T C =25°C)Continuous Drain Current (T C =100°C)Drain Current-Pulsed (1)Gate-to-Source VoltageSingle Pulsed Avalanche Energy (2)Avalanche Current (1)Repetitive Avalanche Energy (1)Peak Diode Recovery dv/dt (3)Total Power Dissipation (T C =25°C)Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8 from case for 5-secondsCharacteristicValue Units Symbol I DM V GS E AS I AR E AR dv/dt I D P D T J , T STGT LA V mJ A mJ V/ns W W/°CA °CV DSS V TO-3P1.Gate2. Drain3. Source321©1999 Fairchild Semiconductor CorporationRev. B元器件交易网400--2.0----------0.50----------1758018217828588.131.3----4.0100-100101000.55--15302059550551706575----8.011180------3152.8411441.5----Notes;(1) Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature (2) L=8mH, I AS =11A, V DD =50V, R G =27Ω, Starting T J =25°C (3) I SD ≤ 10A, di/dt ≤ 170A/µs, V DD ≤ BV DSS , Starting T J =25°C (4) Pulse Test: Pulse Width = 250µs, Duty Cycle ≤ 2%(5) Essentially Independent of Operating TemperatureElectrical Characteristics (T C =25°C unless otherwise specified)Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff.Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse CharacteristicSymbol Max.Units Typ.Min.Test Condition Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output CapacitanceReverse Transfer Capacitance Turn-On Delay Time Rise TimeTurn-Off Delay Time Fall TimeTotal Gate Charge Gate-Source Charge Gate-Drain (Miller ) Chargeg fs C iss C oss C rss t d(on)t r t d(off)t f Q g Q gs Q gdBV DSS∆BV/∆T J V GS(th)R DS(on)I GSS I DSS V V/°C V nAµA ΩΩpF ns nC --------------------------V GS =0V,I D =250µA I D =250µA See Fig 7V DS =5V,I D =250µA V GS =30V V GS =-30V V DS =400VV DS =320V,T C =125°C V GS =10V,I D =5.5A (4) V DS =50V,I D =5.5A(4)V DD =200V,I D =10A,R G =9.1ΩSee Fig 13 (4) (5)V DS =320V,V GS =10V,I D =10ASee Fig 6 & Fig 12 (4) (5)Drain-to-Source Leakage Current V GS =0V,V DS =25V,f =1MHz See Fig 5Source-Drain Diode Ratings and CharacteristicsContinuous Source Current Pulsed-Source Current (1)Diode Forward Voltage (4)Reverse Recovery Time Reverse Recovery ChargeI S I SM V SD t rr Q rrCharacteristicSymbol Max.Units Typ.Min.Test Condition ----------A V ns µCIntegral reverse pn-diode in the MOSFETT J =25°C,I S =11A,V GS =0V T J =25°C,I F =10Adi F /dt=100A/µs (4)10-110010110-110101@ N o t e s :1. 250 µsP u l s e T e s t 2. T C= 25 oC V GS Top : 1 5 V1 0 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 VI D , D r a i n C u r r e n t [A ]V D S , D r a i n -S o u r c e V o l t a g e [V ]24681010-11010125 oC150 oC- 55 oC@ N o t e s :1. V GS = 0 V2. V DS= 50 V 3. 250 µsP u l s e T e s t I D , D r a i n C u r r e n t [A ]V G S , G a t e -S o u r c e V o l t a g e [V ]102030400.00.30.60.91.2@ N o t e : T J= 25 oC V GS= 20 V V GS= 10 V R D S (o n ) , [Ω]D r a i n -S o u r c e O n -R e s i s t a n c eI D, D r a i n C u r r e n t [A ]0.20.40.60.81.01.21.410-1100101150 oC25 oC@ N o t e s :1. V GS = 0 V2. 250 µsP u l s e T e s t I D R , R e v e r s e D r a i n C u r r e n t [A ]V S D , S o u r c e -D r a i n V o l t a g e [V ]101010500100015002000C iss = C gs + C gd ( C ds = s h o r t e d )C oss = C ds + C gd C rss = C gd@ N o t e s :1. V GS = 0 V2. f = 1 M H zC rssC ossC issC a p a c i t a n c e [p F ]V D S , D r a i n -S o u r c e V o l t a g e [V ]102030405060510V DS= 320 V V DS = 200 V V DS= 80 V @ N o t e s : I D= 10.0 A V G S , G a t e -S o u r c e V o l t a g e [V ]Q G , T o t a l G a t e C h a r g e [n C ]Fig 1. Output CharacteristicsFig 2. Transfer CharacteristicsFig 6. Gate Charge vs. Gate-Source VoltageFig 5. Capacitance vs. Drain-Source VoltageFig 4. Source-Drain Diode Forward VoltageFig 3. On-Resistance vs. Drain Current-75-50-252550751001251501750.80.91.01.11.2@ N o t e s :1. V GS = 0 V2. I D= 250 µA B V D S S , (N o r m a l i z e d )D r a i n -S o u r c e B r e a k d o w n V o l t a g eT J , J u n c t i o n T e m p e r a t u r e [oC ]-75-50-252550751001251501750.00.51.01.52.02.53.0@ N o t e s :1. V GS = 10 V2. I D= 5.0 A R D S (o n ) , (N o r m a l i z e d )D r a i n -S o u r c e O n -R e s i s t a n c eT J , J u n c t i o n T e m p e r a t u r e [oC ]1010110210310-110010110210 m s D C10 µs100 µs1 m s @ N o t e s :1. T C =25 o C 2. T J = 150 oC 3. S i n g l e P u l s eO p e r a t i o n i n T h i s A r e ai s L i m i t e d b y R DS(on)I D , D r a i n C u r r e n t [A ]V D S , D r a i n -S o u r c e V o l t a g e [V ]25507510012515024681012I D , D r a i n C u r r e n t [A ]T c , C a s e T e m p e r a t u r e [o C ]10-510-410-310-210-110010110-210-1100single pulse0.20.10.010.020.05D=0.5@ Notes :1. Z θJC (t)=0.77 o C/W Max.2. Duty Factor, D=t 1/t 23. T JM -T C =P DM *Z θJC (t)Z θJ C (t ) , T h e r m a l R e s p o n s et 1 , Square Wave Pulse Duration [sec]Fig 7. Breakdown Voltage vs. TemperatureFig 8. On-Resistance vs. TemperatureFig 11. Thermal ResponseFig 10. Max. Drain Current vs. Case TemperatureFig 9. Max. Safe Operating AreaP DMt 1t 2Fig 12. Gate Charge Test Circuit & WaveformFig 13. Resistive Switching Test Circuit & WaveformsFig 14. Unclamped Inductive Switching Test Circuit & WaveformsE AS =L L I AS 2----21--------------------BV DSS -- V DDBV DSSV inV out10%90%t d(on)t r t ont offt d(off)t fChargeV GS10VQ gQ gs Q gdVary t p to obtain required peak I D10VV DDCL LV DSI DR Gt pDUTBV DSSt pV DDI ASV DS (t)I D (t)TimeV DD( 0.5 rated V DS )10VV out V inR LDUTR G3mAV GSCurrent Sampling (I G )ResistorCurrent Sampling (I D )ResistorDUTV DS300nF50k Ω200nF12VSame Typeas DUTCurrent RegulatorR 1R 2Fig 15. Peak Diode Recovery dv/dt Test Circuit & WaveformsDUTV DS +--LI SDriver V GSR GSame Type as DUTV GSdv/dt controlled by R GI S controlled by Duty Factor DV DD10VV GS ( Driver )I S ( DUT )V DS ( DUT )V DDBody DiodeForward Voltage DropV fI FM , Body Diode Forward CurrentBody Diode Reverse CurrentI RMBody Diode Recovery dv/dtdi/dtD =Gate Pulse Width Gate Pulse Period--------------------------TRADEMARKSACEx™CoolFET™CROSSVOLT™E 2CMOS TM FACT™FACT Quiet Series™FAST ®FASTr™GTO™HiSeC™The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.LIFE SUPPORT POLICYFAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORTDEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROV AL OF FAIRCHILD SEMICONDUCTOR CORPORA TION.As used herein:ISOPLANAR™MICROWIRE™POP™PowerTrench™QS™Quiet Series™SuperSOT™-3SuperSOT™-6SuperSOT™-8TinyLogic™1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant intothe body, or (b) support or sustain life, or (c) whosefailure to perform when properly used in accordancewith instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.2. A critical component is any component of a lifesupport device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.PRODUCT STATUS DEFINITIONS Definition of TermsDatasheet Identification Product Status Definition Advance InformationPreliminary No Identification Needed Obsolete This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.This datasheet contains preliminary data, andsupplementary data will be published at a later date.Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor.The datasheet is printed for reference information only.Formative or In DesignFirst ProductionFull ProductionNot In ProductionDISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY , FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.元器件交易网。