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P-67 / J. H. Seo P-67: Wet Etching of Gallium Indium Zinc Oxide (GIZO) Semiconductorfor Thin Film Transistor ApplicationJong Hyun Seo a,†,Sang-Hyuk Lee a Bo-Hyun Seo a,a Department of Materials Science and Engineering, Korea Aerospace University,200-1 Hwajeon-dong, Deogyang-gu, Goyang 412-791, KoreaJae-Hong Jeon b, HeeHwan Choe b, and Kang-Woong Lee bb School of Electronics, Telecommunications and Computer Engineering, Korea Aerospace University, 200-1Hwajeon-dong, Deogyang-gu, Goyang 412-791, KoreaAbstractRecently, a significant progress has been made in the characterization of gallium indium zinc oxide (GIZO) as a new semiconductor layer instead of amorphous Si semiconductor used in thin film transistor. However, the wet behavior of GIZO thin film in the etching solutions which is conventionally used in TFT industry has not been reported yet. In this work, wet etch behavior of RF magnetron sputtered GIZO thin film in a new wet etchant was studied.1.IntroductionGIZO thin films have been widely studied as an active layer in the thin film transistor (TFT) instead of amorphous silicon (a-Si:H) because of their low cost, low photo sensitivity, no environmental concerns, and especially high mobility. Low process temperature of GIZO is suitable for plastic substrates used in flexible display [1]. The demand for a basic study on the feasibility of wet patterning of GIZO films has been increased. Since GIZO is very weak in most of the wet etchants used in TFT industry, high etch selectivity of data metal line to GIZO semiconductor is essential for a bottom gated TFT structure. However, little is known about the wet etch behavior of the GIZO thin film in wet chemicals. In the present study, the dependency of wet etch behavior of the GIZO thin films on the deposition parameters such as RF power and oxygen partial pressure were studied. Furthermore, we revealed that GIZO shows a typical photo-active dissolution behavior in a wet solution under illumination condition and we also obtained relatively high etch selectivity of data line to oxide semiconductor (Mo/GIZO) using a new wet etchant.2.Experimental resultsThe gallium indium zinc oxide thin films were deposited on the glass substrates using RF magnetron sputtering system. The thicknesses of the thin film were measured with a Tencor profilometer immediately after the deposition. The film resistivity was obtained after metal film was deposited on the GIZO thin films using a transmission line method by a probe station Agilent 4155C. After immersion in the etchants including phosphoric acid or hydrogen peroxide for 5 seconds, dissolution rates of the films were measured from gradient of thickness versus time.The structure and property of a sputter-deposited film are strongly affected by the sputtering parameter [2]. In addition, it has been known that the corrosion behavior of the thin film is strongly dependent on the structures of the film [3]. The resistivities of the GIZO thin films increased with increasing oxygen partial pressure (fig. 1). As the oxygen vacancies in the film decreased with increasing oxygen partial pressure, the charge carrier density of the film diminished and the resistivity of the film increased. The resistivities of the films approached a saturation value with increasing oxygen partial content. The deposition rate of the film decreases with increasing oxygen partial pressure during the film deposition. It attribute to the increase in the scattering probability of GIZO atoms by increased oxygen anions in the plasma.Figure 2 shows the dependency of etch rate of the GIZO thin films on oxygen partial pressure in acid solutions. It is a noticeable result that the GIZO film exhibits the increase of the etch rate in acid solutions as increasing oxygen partial pressure. Such unique etch behavior has been reported as regards with the Zinc oxide(ZnO) film with varying oxygen partial pressure in a highly concentrated hydrochloric acid solution [4]. They showed that the etch rate of the ZnO film increased as the crystallinity of the film increased.It is noted that the dissolution of GIZO is greatly enhanced under illumination condition compared with dark condition (Fig.3). Difference in etch rates between illumination and dark condition is increased with increasing oxygen partial pressure. Under the illumination of photons that have higher energy than the optical bandgap of GIZO, then hole (p+) and electron pair generate in the GIZO. At higher oxygen contents, the corrosion rate of GIZO thin film is greater than that of the lower oxygen contents. Such photo-enhanced dissolution of the GIZO has not been reported yet. It is quite interesting phenomena but needs more investigation for an exact explanation on the tendency of dissolution rate of the film with varying the oxygen content.SID 08 DIGEST • 1439ISSN/008-0966X/08/3903-1439-$1.00 © 2008 SIDP-67 / J. H. SeoFigure 1. Change of the deposition rates and resistivity of GIZO thin films on the glass substrates; as functions of the oxygen partial pressure, at 100W, 5mTorr and room temperature.For bottom gated TFT structure, it is desirable to get a high etch selectivity between data metal layer and underlying semiconductor layer. We select molybdenum as a data metal for GIZO TFT due to its good ohmic contact with GIZO semiconductor. Etch selectivity is defined as the ratio of the etch rate of the molybdenum to the rate of the GIZO semiconductor layer. In the case of bottom gated structure, this etch selectivity should be high more than 7 for commercial use in order to prevent the dissolution of underlying GIZO semiconductor layer during the process of data metal line patterning using aggressive wet chemicals.Figure 2. Dissolution rates of GIZO thin films in acid solutions as functions of the oxygen partial pressure.Figure 3. Change of etch rates of GIZO films in hydrogen peroxide etchant; as function of O2 partial pressure under both illumination and dark condition.Figure 4 compares the normal phosphoric base wet etchant with a new wet etchant developed for molybdenum in GIZO TFT system. The selectivity of H2O2 base solution is much greater than that of H3PO4 base solution.Figure 5 shows change of selectivity of the molybdenum thin film against the GIZO films in a hydrogen peroxide etchant. The selectivity of Mo/GIZO increased with increasing the hydrogenperoxide contents in the solution.Figure 4. The etch selectivity of Mo to GIZO thin films both in phosphoric acid base solution and hydrogen peroxide base solution. All the GIZO films are grown at 100W RF power, 5 mTorr, with oxygen input of 0.3 sccm.1440 • SID 08 DIGESTP-67 / J. H. SeoFigure 5. Change of the wet etch selectivity for Mo to GIZO thin films; as function of the hydrogen peroxide contents in the wet etchant. All the GIZO films are grown at 100W RF power, 5 mTorr, with oxygen input 0.3 sccm. 3. ConclusionsWet dissolution behavior of RF magnetron sputtered GIZO thin films on the glass substrate has been examined. In the case of oxygen pressure, corrosion rate of the GIZO film increased with increasing oxygen partial pressure. GIZO shows a typical photo-active dissolution behavior in a wet solution under illumination condition. Furthermore, we found a suitable etchant with a high selectivity of molybdenum to GIZO semiconductor for bottom gate TFT structure4. References[1] K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, H. Hosono, Nature 432 (2004)[2] T. Kawase, H. Sirringhaus, R. H. Friend, and T. Shimoda, SID 2001 Digest, 40 (2001)[3] J. H. Seo, J. Korean Phys. Soc. 50, 1193 (2007)[4] B. H. Seo et al. IMID 2007.SID 08 DIGEST • 1441。

Dimensions of CNY70 in mm95 11345www.vishay.Document Number 83751Ozone Depleting Substances Policy StatementIt is the policy of Vishay Semiconductor GmbH to1.Meet all present and future national and international statutory requirements.2.Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment.It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs).The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances.Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents.1.Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively2.Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the EnvironmentalProtection Agency (EPA) in the USA3.Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, GermanyTelephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423Document Number 83751。

Accelarated PublicationChemical modification of carbon nanotube for improvement of field emission propertySunwoo Lee a ,Tetsuji Oda a ,Paik-Kyun Shin b,*,Boong-Joo Lee caElectronic Engineering,The University of Tokyo,113-8656Hongo,Tokyo,JapanbSchool of Electrical Engineering,Inha University,#253Yonghyun-Dong,Nam-Gu,Incheon Metropolitan City 402-751,Republic of Korea cElectronic Engineering,Namseoul University,21Maeju-ri,Seounghwan-Eup,Cheonan City,Choongnam 330-707,Republic of Koreaa r t i c l e i n f o Article history:Received 17November 2008Received in revised form 31December 2008Accepted 17February 2009Available online 25February 2009Keywords:Chemical modification Carbon nanotube CNTField emission Tunnelinga b s t r a c tIn the present work,chemical modification of carbon nanotube was proposed for improvement of field emission property.Multi-wall carbon nanotubes (MWCNTs)were grown vertically on silicon substrate using catalytic chemical vapor deposition.Tips of grown MWCNTs were chemically modified using oxy-gen plasma,nitric acid,and hydrofluoric acid.Surface state and morphology of the chemically modified CNTs were T tips were opened and defects working as trap sites were generated on the CNT surface by the chemical modification process leading to improvement of field emission property.We suggest that two main factors determining the field enhancement factor are geometric factor and surface state of the CNT tips.Ó2009Elsevier B.V.All rights reserved.1.IntroductionCarbon nanotubes (CNTs)have attracted much attention be-cause of their unique electrical properties and their potential appli-cations [1,2].Large aspect ratios of CNTs with high chemical stability,thermal conductivity,and high mechanical strength are advantageous for applications to the field emitter [3].Since CNTs are grown directly on a substrate by CVD,the CNT emitter can be fabricated simply.Many researchers have devoted efforts to the artificial control of alignment,number density,and aspect ratio of CNTs [4–7].Although it is essential for FED application to eluci-date the correlation between the structural properties and field electron emission properties of CNTs,systematic experiments on the field emission property regarding the change of surface state of CNTs by chemical modification have not been carried out Ts having strong covalent bonds are very stable against to chemical attacks.Breaking these strong covalent bonds and chang-ing surface state would be expected to change the CNT’s physical property as well as chemical property [8,9].As field emission behavior takes place at the tip of the CNT,one could control the field emission property by changing the structure and surface state of the CNT tips.In this study,the correlation between the field emission prop-erty and structural property or surface state of CNTs was investi-gated as a function of the chemical modification.Although the field emission properties of CNTs were improved with increasing the aspect ratio of the CNT,the field enhancement factor obtained from the Fowler–Nordheim plot was found to be much larger than that obtained from the geometric factors.These results suggest that the field emission from CNTs is strongly influenced by the sur-face states induced by surface defects and attached functional groups,rather than by their geometric factors.2.ExperimentalIn our experiment,the nickel catalyst films were prepared by sputtering method on silicon substrate using low power and long time (at 10W for 1h)to minimize size and distribution of the nick-el catalyst particles.MWCNTs used in this work were grown in a thermal CVD system with C 2H 2source gas and Ar carrier gas with a flow rate of 30/100sccm at 700°C on the nickel catalyst.The CNTs were chemically modified by oxygen plasma,nitric acid (HNO 3),and hydrofluoric acid (HF).The modified samples were named as O 2–CNT,HNO 3–CNT,and HF–CNT,respectively.The oxygen plasma treatment was done with a gas flow rate of O 2:Ar =20:200sccm at 500°C for 5min.The HNO 3treatment was done in 20vol%HNO 3solution at room temperature for 1h,and the samples was subsequently rinsed in distilled water,and dried at room temperature for 1h.The HF treatment was done in 20vol%HF solution at room temperature for 1h,and the sample was rinsed and dried.0167-9317/$-see front matter Ó2009Elsevier B.V.All rights reserved.doi:10.1016/j.mee.2009.02.021*Corresponding author.Tel.:+82328607393;fax:+82328635822.E-mail address:shinsensor@inha.ac.kr (P.-K.Shin).Microelectronic Engineering 86(2009)2110–2113Contents lists available at ScienceDirectMicroelectronic Engineeringjournal homepage:www.else v i e r.c o m /l o c a t e /m eeThe field emission characteristics of the grown CNT film was measured by digital multimeter in a vacuum chamber with a base pressure of 1.5Â10À8Torr.A flat parallel diode type configuration was used in the setup as shown in Fig.1.Both electrodes were glass plated with a conductive indium tin oxide (ITO)coating,and the cathode contained the grown CNT film.The distance between the anode and the CNT film surface was 100l m as separated by spacers.The surface morphology and internal structure of the CNTs were characterized by scanning electron microscopy (SEM)and trans-mission electron microscopy (TEM).3.Results and discussionsSEM images and TEM images (right side of each image)of the as-grown CNTs and the chemically modified CNTs are shown in Ts grown in this work are bamboo type multi-wall carbon nanotubes,which are vertically aligned to the substrate.The length of chemically modified CNTs is slightly shorter than that of as-grown CNTs due to the chemical etching during the chemical mod-ification processes.In case of the HNO 3–CNT,length was drastically reduced,because CNTs were partly delaminated and remained CNTs were fallen down during the chemical modification process.Tip of as-grown CNT is typically closed,while those of chemi-cally modified CNTs are opened as shown in Fig.2(right side of each image).The most parts of CNT consist of stable hexagonal car-bon structure,while the tip of CNT has pentagonal structure to close the tube end [10].The pentagonal carbon structure is easily broken by the chemical attack relative to the hexagonal structure [11].Relatively weak bonds at the CNT tip might be broken and opened by the chemical modification.Since the bond breaking might be started from the outer shell of the MWCNT used in this work and propagated into the inner shell,the shape of CNT tips be-came sharp.Furthermore,the chemical modification process might result in changing the surface state by the bond breaking as well as the structural change.In order to confirm the above mentioned surface state change,X-ray photoelectron spectroscopy (XPS)using the monochrome Al Ka X-ray was carried out.Wide scan spectra for as-grown and chemically modified CNTs are shown in Fig.3.In all cases,carbon peak (C1s,284.5eV)and oxygen peak (O1s,530eV)are observed [12].The oxygen peak stronger than that of the as-grown CNT film for the O 2–CNT,the weak nitrogen peak for HNO 3–CNT,and fluo-rine peak for HF–CNT are observed.This result correspondstoFig.1.Schematic drawing of the setup for measurement of the field emissioncurrent.Fig.2.SEM (left)and TEM (right)images of as-grown and chemically modified CNTs.S.Lee et al./Microelectronic Engineering 86(2009)2110–21132111the previous TEM results that the chemical modification processes could change the surface states of the CNT tips.The chemical modification dependence on the field emission property was investigated.Fig.4a shows emission current density as a function of applied electric field for the as-grown CNTs and the chemically modified CNTs.It is found that the chemically modified CNTs exhibit a better field emission property than that for the as-grown CNTs.If we define the threshold electric field (E th )as the ap-plied electric field that produces an emission current of 1mA/cm 2,it can be clearly seen from Fig.4b that threshold electric field is chemical modification dependent.The Fowler–Nordheim (F–N)equation can be described as,J ¼1:56Â10À6ðb E Þ2/exp À6:83Â109/3=2b E!;where J (A/cm 2)is the emission current density,E (V/l m)is theapplied electric field,b is the field enhancement factor,and /(eV)is the work function of the emitter [13].The experimental value b can be estimated on the basis of the slope of the F–N plot as shown in Fig.4c.Although there is no distinguishable difference in geo-metric factors such as diameter and length of each CNTs,the field emission property for chemically modified CNTs is better than that for as-grown CNTs.We estimated the field enhancement factors for each CNTs using geometric factors from SEM images and the FN plot of the experimental field emission data.The field enhance-ment factor estimated from the FN plot (b $1000s)was two or-ders greater than that estimated from the geometric factors (b $10s).This result implies that the field enhancement factor estimated from the F–N plot includes another factor for the improvement of field emission.Another factor affecting field emis-sion more dominantly might be correlated with the surface state of the CNT tips.TEM results and XPS results strongly imply that defects working as trap sites might be on the CNT surfaces.As shown in Fig.4c,there are two different kinds of tunneling mechanism from the slope of J /E 2vs.1/E plots.The slope at low field regime is quite dif-ferent from that at high field regime.Trap sites play a dominant role in tunneling mechanism at lower field than FN tunneling re-gime,so called trap assisted tunneling (TAT)[14].Tunneling gov-erned by TAT mechanism at low field regime affect the threshold electric field,and is related to trap sites on CNT tips.The tunneling model is based on a two-step tunneling process via traps on CNT surface which incorporates energy loss by phonon emission [15].Fig.4d shows the basic two-step process of an electron tunneling from a region with higher Fermi energy (the cathode)to a region with lower Fermi energy (the anode).Electrons could be emitted at relatively low electric field with an aid of trap sites.Finally,we suggest that two main factors determining the field enhance-ment factor are geometric factor and surface state.Therefore gen-eration of trap sites on CNT surface is strongly required to improve the field emission property,as well as the geometricfactor.Fig.3.XPS wide scan spectra of the as-grown CNTs and the chemically modified CNTs.Since some parts of CNTs are delaminated during HNO 3chemical modification process as shown in Fig.2c,strong oxygen and silicon signals are detected from the naturally oxidized Si substrate.2112S.Lee et al./Microelectronic Engineering 86(2009)2110–21134.SummaryWe have found that CNT tips were opened and defects working as trap sites were generated on the CNT surface by the chemical modification process leading to improvement of field emission property.Trap sites play a dominant role in tunneling mechanism at lower field than FN tunneling regime.We found that another factor affecting the field emission might be correlated with the sur-face state of the CNT tips.Therefore generation of trap sites on CNT surface is strongly required to improve the field emission property,as well as the geometric factor.References[1]W.A.de Heer,A.Chatelain,D.Ugarte,Science 270(1995)1179.[2]B.I.Yakobson,R.E.Smalley,Am.Sci.85(1997)324.[3]T.W.Ebbesen,Carbon Nanotubes,CRC Press,Boca Raton,FL,1997.[4]M.Chhowalla,K.B.K.Teo,C.Ducati,N.L.Rupesinghe,G.A.J.Amaratunga,A.C.Ferrari,D.Roy,J.Robertson,ne,J.Appl.Phys.90(2001)5308.[5]Y.Y.Wei,G.Eres,V.I.Merkulov,D.H.Lowndes,Appl.Phys.Lett.78(2001)1394.[6]V.I.Merkulov,D.H.Lowndes,Y.Y.Wei,G.Eres,E.Voelkl,Appl.Phys.Lett.76(2000)3555.[7]M.Katayama,K.-Y.Lee,S.Honda,T.Hirao,K.Oura,Jpn.J.Appl.Phys.43(2004)L774.[8]W.K.Hong,H.C.Shin,S.H.Tsai,et al.,Jpn.J.Appl.Phys.39(2000)L925.[9]U.D.Weglikowska,J.M.Benoit,P.W.Chiu,et al.,Curr.Appl.Phys.(2002)2.[10]G.L.Martin,P.R.Schwoebel,Surf.Sci.601(2007)1521.[11]X.Y.Zhu,S.M.Lee,Y.H.Lee,T.Frauenheim,Phys.Rev.Lett.85(2000)2757.[12]F.Moulder,W.F.Stickle,P.E.Sobol,K.D.Bomben,Handbook of X-rayPhotoelectron Spectroscopy,Physical Electronics,Inc.,Minnesota,1995.[13]R.H.Fowler,L.W.Nordheim,Proc.R.Soc.Lond.Ser.(1928)A119.[14]M.Houssa,M.Tuominen,M.Naili,V.Afanas’ev,A.Stesmans,S.Haukka,M.M.Heyns,J.Appl.Phys.87(2000)8615.[15]F.Jiménez-Molinos,A.Palma,F.Gámiz,J.Banqueri,J.A.Lopez-Villanueva,J.Appl.Phys.90(2001)3396.Fig.4.(a)J –E curves of the as-grown CNTs and the chemically modified CNTs.(b)Threshold electric field as a function of chemical modification.(c)J /E 2–1/E curves of the as-grown CNTs and the chemically modified CNTs.(d)Field emission model considering trap sites on the surface of CNT tip.S.Lee et al./Microelectronic Engineering 86(2009)2110–21132113。

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RHP-深沟球轴承61901-RZ1160901K NSK6901V 深沟球轴承61901-RZ1160901K NACHI6901NKE 深沟球轴承61901-RZ1160901K FAG-深沟球轴承61901-RZ1160901K SKF61901-RZ 深沟球轴承6201-RZ160201K NSK6201V 深沟球轴承6201-RZ160201K NACHI6201NKE 深沟球轴承6201-RZ160201K FAG-深沟球轴承6201-RZ160201K SKF6201-RZ 深沟球轴承6201-RZ160201K MRC-深沟球轴承6201-RZ160201K FAFNIR-深沟球轴承6201-RZ160201K SNR-深沟球轴承6201-RZ160201K RHP-深沟球轴承61802-RZ1160802K MRC-深沟球轴承61802-RZ1160802K FAFNIR-深沟球轴承61802-RZ1160802K SNR-深沟球轴承61802-RZ1160802K RHP-深沟球轴承61902-RZ1160902K NSK6902V 深沟球轴承61902-RZ1160902K NACHI6902NKE 深沟球轴承61902-RZ1160902K FAG-深沟球轴承61902-RZ1160902K SKF61902-RZ 深沟球轴承6202-RZ160202K NSK6202V 深沟球轴承6202-RZ160202K NACHI6202NKE 深沟球轴承6202-RZ160202K FAG-深沟球轴承6202-RZ160202K SKF6202-RZ 深沟球轴承6202-RZ160202K MRC-深沟球轴承6202-RZ160202K FAFNIR-深沟球轴承6202-RZ160202K SNR-深沟球轴承6202-RZ160202K RHP-深沟球轴承61803-RZ1160803K FAFNIR-深沟球轴承61803-RZ1160803K SNR-深沟球轴承61803-RZ1160803K RHP-深沟球轴承61903-RZ1160903K NSK6903V 深沟球轴承61903-RZ1160903K NACHI6903NKE 深沟球轴承61903-RZ1160903K FAG-深沟球轴承61903-RZ1160903K SKF61903-RZ 深沟球轴承6203-RZ160203K NSK6203V 深沟球轴承6203-RZ160203K NACHI6203NKE 深沟球轴承6203-RZ160203K FAG-深沟球轴承6203-RZ160203K SKF6203-RZ 深沟球轴承6203-RZ160203K MRC-深沟球轴承6203-RZ160203K FAFNIR-深沟球轴承6203-RZ160203K SNR-深沟球轴承6203-RZ160203K RHP-深沟球轴承61804-RZ1160804K MRC-深沟球轴承61804-RZ1160804K FAFNIR-深沟球轴承61804-RZ1160804K SNR-深沟球轴承61804-RZ1160804K RHP-深沟球轴承61904-RZ1160904K NSK6904V 深沟球轴承61904-RZ1160904K NACHI6904NKE 深沟球轴承61904-RZ1160904K FAG-深沟球轴承61904-RZ1160904K SKF61904-RZ 深沟球轴承6204-RZ160204K NSK6204V 深沟球轴承6204-RZ160204K NACHI6204NKE 深沟球轴承6204-RZ160204K FAG-深沟球轴承6204-RZ160204K SKF6204-RZ 深沟球轴承6204-RZ160204K MRC-深沟球轴承6204-RZ160204K FAFNIR-深沟球轴承6204-RZ160204K SNR-深沟球轴承6204-RZ160204K RHP-深沟球轴承61805-RZ1160805K MRC-深沟球轴承61805-RZ1160805K FAFNIR-深沟球轴承61805-RZ1160805K SNR-深沟球轴承61805-RZ1160805K RHP-深沟球轴承61905-RZ1160905K NSK6905V 深沟球轴承61905-RZ1160905K NACHI6905NKE 深沟球轴承61905-RZ1160905K FAG-深沟球轴承61905-RZ1160905K SKF61905-RZ 深沟球轴承6205-RZ160205K NSK6205V 深沟球轴承6205-RZ160205K NACHI6205NKE 深沟球轴承6205-RZ160205K FAG-深沟球轴承6205-RZ160205K SKF6205-RZ 深沟球轴承6205-RZ160205K MRC-深沟球轴承6205-RZ160205K FAFNIR-深沟球轴承6205-RZ160205K SNR-深沟球轴承6205-RZ160205K RHP-深沟球轴承61806-RZ1160806K MRC-深沟球轴承61806-RZ1160806K FAFNIR-深沟球轴承61806-RZ1160806K SNR-深沟球轴承61806-RZ1160806K RHP-深沟球轴承61906-RZ1160906K NSK6906V 深沟球轴承61906-RZ1160906K NACHI6906NKE 深沟球轴承61906-RZ1160906K FAG-深沟球轴承61906-RZ1160906K SKF61906-RZ 深沟球轴承6206-RZ160206K NSK6206V 深沟球轴承6206-RZ160206K NACHI6206NKE 深沟球轴承6206-RZ160206K FAG-深沟球轴承6206-RZ160206K SKF6206-RZ 深沟球轴承6206-RZ160206K MRC-深沟球轴承6206-RZ160206K FAFNIR-深沟球轴承6206-RZ160206K SNR-深沟球轴承6206-RZ160206K RHP-深沟球轴承61810-RZ1160810K MRC-深沟球轴承61810-RZ1160810K FAFNIR-深沟球轴承61810-RZ1160810K SNR-深沟球轴承61810-RZ1160810K RHP-深沟球轴承61910-RZ1160910K NSK6910V 深沟球轴承61910-RZ1160910K NACHI6910NK 深沟球轴承61910-RZ1160910K FAG-深沟球轴承61910-RZ1160910K SKF61910-RZ 深沟球轴承6210-RZ160210K NSK6210V 深沟球轴承6210-RZ160210K NACHI6210NKE 深沟球轴承6210-RZ160210K FAG-深沟球轴承6210-RZ160210K SKF-深沟球轴承6210-RZ160210K MRC-深沟球轴承6210-RZ160210K FAFNIR-深沟球轴承6210-RZ160210K SNR-深沟球轴承6210-RZ160210K RHP-深沟球轴承61818-RZ1160818K MRC-深沟球轴承61818-RZ1160818K FAFNIR-深沟球轴承61818-RZ1160818K SNR-深沟球轴承61818-RZ1160818K RHP-深沟球轴承618918-RZ1160918K NSK6918V深沟球轴承618918-RZ1160918K NACHI-深沟球轴承618918-RZ1160918K FAG-深沟球轴承618918-RZ1160918K SKF-深沟球轴承6218-RZ160218K NSK6218V 深沟球轴承6218-RZ160218K NACHI6218NK 深沟球轴承6218-RZ160218K FAG-深沟球轴承6218-RZ160218K SKF-深沟球轴承6218-RZ160218K MRC-深沟球轴承6218-RZ160218K FAFNIR-深沟球轴承6218-RZ160218K SNR-深沟球轴承6218-RZ160218K RHP-深沟球轴承61820-RZ1160820K MRC-深沟球轴承61820-RZ1160820K FAFNIR-深沟球轴承61820-RZ1160820K SNR-深沟球轴承61820-RZ1160820K RHP-深沟球轴承61920-RZ1160920K NSK6920V 深沟球轴承61920-RZ1160920K NACHI-深沟球轴承61920-RZ1160920K FAG-深沟球轴承61920-RZ1160920K SKF-深沟球轴承6220-RZ160220K NSK6220V 深沟球轴承6220-RZ160220K NACHI6220NK 深沟球轴承6220-RZ160220K FAG-深沟球轴承6220-RZ160220K SKF-深沟球轴承6220-RZ160220K MRC-深沟球轴承6220-RZ160220K FAFNIR-深沟球轴承6220-RZ160220K SNR-深沟球轴承6220-RZ160220K RHP-深沟球轴承61822-RZ1160822K MRC-深沟球轴承61822-RZ1160822K FAFNIR-深沟球轴承61822-RZ1160822K SNR-深沟球轴承61822-RZ1160822K RHP-深沟球轴承6022-RZ160122K NSK6022V 深沟球轴承6022-RZ160122K NACHI-深沟球轴承6022-RZ160122K FAG-深沟球轴承6022-RZ160122K SKF-深沟球轴承61824-RZ1160824K NSK6824V 深沟球轴承61824-RZ1160824K NACHI-深沟球轴承61824-RZ1160824K FAG-深沟球轴承61824-RZ1160824K SKF61824-RZ 深沟球轴承61824-RZ1160824K MRC-深沟球轴承61824-RZ1160824K FAFNIR-深沟球轴承61824-RZ1160824K SNR-深沟球轴承61824-RZ1160824K RHP-深沟球轴承6224-RZ160224K MRC-深沟球轴承6224-RZ160224K FAFNIR-深沟球轴承6224-RZ160224K SNR-。

Part I Writing (30 minutes)注意：此部分试题在答题卡1上。

Directions: For this part, you are allowed 30 minutes to write a short essay on the topic of Due Attention Should Be Given To Spelling. You should write at least 120 words following the outline given below:1. 如今不少学生在英语学习中不重视拼写2. 出现这种情况的原因3. 为了改变这种状况，我认为…Due Attention Should Be Given To Spelling__________________________________________________________ ______________________________________________________________ ______________________________________________________________ ______________________________________________________________ ______________________________________________________________ ______________________________________________________________ ______________________________________________________________ ______________________________________________________________ ______________________________________________________________ ______________________________________________________________ ______________________________________________________________ ______________________________________________________________ ______________________________________________________________ ______________________________________________________________ ______Part II Reading Comprehension (Skimming and Scanning) (15 minutes)Directions: In this part, you will have 15 minutes to go over the passage quickly and answer the questions on Answer Sheet 1. For questions 1-7, choose the best answer from the four choices marked A), B), C) and D). For questions 8-10, complete the sentences with the information given in the passage.Caught in the WebA few months ago, it wasn't unusual for 47-year-old Carla Toebe to spend 15 hours per day online. She'd wake up early, turn on her laptop and chat on Internet dating sites and instant-messaging programs – leaving her bed for only brief intervals. Her household bills piled up, along with the dishes and dirty laundry, but it took near-constant complaints from her four daughters before she realized she had a problem."I was starting to feel like my whole world was falling apart – kind of slipping into a depression," said Carla. "I knew that if I didn't get off the dating sites, I'd just keep going," detaching (使脱离) herself further from the outside world.Toebe's conclusion: She felt like she was "addicted" to the Internet. She's not alone.Concern about excessive Internet use isn't new. As far back as 1995, articles in medical journals and the establishment of a Pennsylvania treatment center for overusers generated interest in the subject. There's still no consensus on how much time online constitutes too much or whether addiction is possible.But as reliance on the Web grows, there are signs that the question is getting more serious attention: Last month, a study published in CNS Spectrums claimed to be the first large-scale look at excessive Internet use. The American Psychiatric Association may consider listing Internet addiction in the next edition of its diagnostic manual. And scores of online discussion boards have popped up on which people discuss negative experiences tied to too much time on the Web."There's no question that there're people who're seriously in trouble because they're overdoing their Internet involvement," said psychiatrist (精神科医生) Ivan Goldberg. Goldberg calls the problem a disorder rather than a true addiction.Jonathan Bishop, a researcher in Wales specializing in online communities, is more skeptical. "The Internet is an environment," he said. "You can't beaddicted to the environment." Bishop describes the problem as simply a matter of priorities, which can be solved by encouraging people to prioritize other life goals and plans in place of time spent online.The new CNS Spectrums study was based on results of a nationwide telephone survey of more than 2,500 adults. Like the 2005 survey, this one was conducted by Stanford University researchers.About 6% of respondents reported that "their relationships suffered because of excessive Internet use." About 9% attempted to conceal "nonessential Internet use," and nearly 4% reported feeling "preoccupied by the Internet when offline."About 8% said they used the Internet as a way to escape problems, and almost 14% reported they "found it hard to stay away from the Internet for several days at a time.""The Internet problem is still in its infancy," said Elias Aboujaoude, a Stanford professor. No single online activity is to blame for excessive use, he said. "They're online in chat rooms, checking e-mail, or writing blogs. [The problem is] not limited to porn (色情) or gambling" websites.Excessive Internet use should be defined not by the number of hours spent online but "in terms of losses," said Maressa Orzack, a Harvard University professor. "If it's a loss [where] you're not getting to work, and family relationships are breaking down as a result, then it's too much."Since the early 1990s, several clinics have been established in the U. S. to treat heavy Internet users. They include the Center for Internet Addiction Recovery and the Center for Internet Behavior.The website for Orzack's center lists the following among the psychological symptoms of computer addiction:● Having a sense of well-being (幸福) or excitement while at the computer.● Longin g for more and more time at the computer.● Neglect of family and friends.● Feeling empty, depressed or irritable when not at the computer.● Lying to employers and family about activities.● Inability to stop the activity.● Problems with school or job.Physical symptoms listed include dry eyes, backaches, skipping meals, poor personal hygiene (卫生) and sleep disturbances.People who struggle with excessive Internet use maybe depressed or have other mood disorders, Orzack said. When she discusses Internet habits with her patients, they often report that being online offers a "sense of belonging, and escape, excitement [and] fun," she said. "Some people say relief…because they find themselves so relaxed."Some parts of the Internet seem to draw people in more than others. Internet gamers spend countless hours competing in games against people from all over the world. One such game, called World of Warcraft, is cited on many sites by posters complaining of a "gaming addiction."Andrew Heidrich, an education network administrator from Sacramento, plays World of Warcraft for about two to four hours every other night, but that's nothing compared with the 40 to 60 hours a week he spent playing online games when he was in college. He cut back only after a full-scale family intervention (干预), in which relatives told him he'd gained weight."There's this whole culture of competition that sucks people in" with online gaming, said Heidrich, now a father of two. "People do it at the expense of everything that was a constant in their lives." Heidrich now visits websites that discuss gaming addiction regularly "to remind myself to keep my love for online games in check."Toebe also regularly visits a site where posters discuss Internet overuse. In August, when she first realized she had a problem, she posted a message on a Yahoo Internet addiction group with the subject line: "I have an Internet Addiction.""I'm self-employed and need the Internet for my work, but I'm failing to accomplish my work,to take care of my home, to give attention to my children," she wrote in a message sent to the group."I have no money or insurance to get professional help; I can't even pay my mortgage (抵押贷款) and face losing everything."Since then, Toebe said, she has kept her promise to herself to cut back on her Internet use. "I have a boyfriend now, and I'm not interested in onlinedating," she said by phone last week. "It's a lot better now."注意：此部分试题请在答题卡1上作答。

V10 Aug. 2017目录1.开箱 (3)1.1包装清单 (3)2.安装 (4)2.1连接i-Craft TM (4)2.2安装刀片 (5)2.3Sure Cuts A Lot软件安装 (6)2.3.1自动安装 (6)2.3.2手动激活软件 (10)2.3.3重新安装Sure Cuts A Lot软件 (11)2.3.4 电脑格式化后如何重新启动Sure Cuts A Lot (12)2.4GreatCut安装说明 (14)2.5平板电脑App安装 (20)2.5.1设置无线接入点（AP） (20)3.操作方法 (22)3.1控制面板 (22)3.2控制面板设置 (23)3.2.1 Origin setting（原点设置） (23)3.2.2 高级设置菜单 (23)3.3装载介质 (24)3.4 连接Sure Cuts A Lot软件与i-Craft TM (26)3.5 通过Sure Cuts A Lot软件在i-Craft TM上输出 (27)3.5.1 插入图库中的图像 (28)3.5.2 输入文本 (29)3.5.3 导入图形 (29)3.5.4Shadow Layer阴影图层(Contour Cut循边切割) (30)3.5.5 将图片转换为切割文件 (30)3.6 切割输出 (34)3.6.1 切割输出 (34)3.6.2 打印并切割 (37)3.6.3Scan2Cut (40)3.6.4Rhinestones (43)3.6.5 Engraving Tip雕刻刀应用（选配） (43)3.6.6Color Pen Applications 彩色笔应用（选配） (46)3.7在线视频教学 (49)3.8如何通过平板电脑输出到i-Craft TM上 (50)4. 驱动安装及操作说明 (53)4.1 驱动安装 (53)4.2 驱动卸载 (56)4.3 驱动操作说明 (59)4.3.1 通过应用程序切割（以CorelDraw为例说明） (59)4.4 通过应用软件循边切割 (61)5. 如何使用i-Craft TM上的U盘 (62)5.1 读取i-Craft TM中的U盘 (62)5.2U盘设置 (62)5.2.1如何通过U盘切割图形 (63)5.3 功能菜单 (64)5.3.1 介质菜单 (64)5.3.2 U盘菜单 (65)6. 附件 (65)6.1 i-Craft TM规格表 (65)6.2 介质参数设置清单 (66)6.3 CorelDRAW插件使用说明 (67)6.4 Illustrator插件使用说明 (79)1.1 包装清单打开包装，取出i-Craft TM放置于工作平台上。

VX-5500O PERATING M ANUALVERTEX STANDARD CO., LTD.4-8-8 Nakameguro, Meguro-Ku, Tokyo 153-8644, JapanVERTEX STANDARDUS Headquarters10900 Walker Street, Cypress, CA 90630, U.S.A.International Division8350 N.W. 52nd Terrace, Suite 201, Miami, FL 33166, U.S.A.YAESU EUROPE B.V.P.O. Box 75525, 1118 ZN Schiphol, The NetherlandsYAESU UK LTD.Unit 12, Sun Valley Business Park, Winnall CloseWinchester, Hampshire, SO23 0LB, U.K.VERTEX STANDARD HK LTD.Unit 5, 20/F., Seaview Centre, 139-141 Hoi Bun Road,Kwun Tong, Kowloon, Hong KongCongratulations!You now have at your fingertips a valuable communications tool - a two-wayradio! Rugged, reliable and easy to use, your radio will keep you in constanttouch with your colleagues for years to come, with negligible maintenance down time. Please take a few minutes to read this manual carefully. The information presented here will allow you to derive maximum performance from your radio. After reading it, keep the manual handy for quick reference, in case questions arise later on.We’re glad you joined the team. Call on us any time, because our business iscommunications. Let us help you get your message across.NOTICEThere are no user-serviceable points inside this transceiver. All service jobs must be referred to your Authorized Service Center or Network Administrator.Safety / Warning InformationWARNING - DO NOT operate the VX-5500V radio when someone (bystanders) outside the vehicle is within following range.Safety Training information:Antennas used for this transmitter must not exceed an antenna gain of 0 dBd. The radio must be used in vehicle-mount configurations with a maximum operating duty factor not exceeding 50%, in typical Push-to-Talk configurations.This radio is restricted to occupational use, work related operations only where the radio operator must have the knowledge to control the exposure conditions of its passengers and bystanders by maintaining the minimum separation distance of following range.Failure to observe these restrictions will result in exceeding the FCC RF exposure limits.Antenna Installation:For rear deck trunk installation, the antenna must be located at least the following range away from rear seat passengers and bystanders in order to comply with the FCC RF exposure requirements.For roof top installation, the antenna must be placed in the center of the roof.Radiated frequency and DistanceVX-5500V (C)1.97 Feet(0.6 m)VX-5500 Operating ManualThe VX-5500 Series are full-featured FM transceivers designed for flexible mobile and base station business communications in the VHF (50/10 Watts: programmable) Land Mobile Bands. Each model is designed for reliable business communications in a wide variety of applications, with a wide range of operating capability provided by its leading-edge design.The 250-channels memories can each be programmed with a 8-character channel name.Important channel frequency data is stored in EEPROM and flash memory on the CPU, and is easily programmable by dealers using a personal computer and the VERTEX STAN-DARD CT-71 Programming Cable and CE49 Software.The pages which follow will detail the many advanced features provided on the VX-5500 transceiver. After reading this manual, you may wish to consult with your Network Ad-ministrator regarding precise details of the configuration of this equipment for use in your application.Front PanelÀPOWER BottonPress the button to turn the transceiver ON and OFF.ÁTX IndicatorThis lamp glows red when the radio is transmitting.ÂBUSY IndicatorThis lamp glows green when the channel is busy.ÃLiquid Crystal DisplayThe display include an 8-character alpha-numeric section showing channel and group names, status and identity information, and error messages. Additional indicators onthe display show priority channel assignments and scan include / exclude selection.“S PEAKER” List “OÄp/q ButtonPressing these buttons changes the current group (and displayed group number or name). Holding this button for more than 1/2 second causes the function to repeat.ÅSQC IndicatorThis lamp glows orange when incorrect position at the setting of CE49.ÆProgrammable Function Button (PF button)This button can be set up for special applications, such as high/low power selection, monitor, dimmer, talk-around, and call alert function, as determined by your network requirements and programmed by your VERTEX STANDARD dealer.ÇVOLUME KnobThis knob sets the volume of the receiver.ÈEMERGENCY MicrophoneThe emergency microphone is located behind this small slit. When the emergency feature is activated, this Microphone is enabled.ÉCHANNEL Selector KnobThis knob select the operating channel.Programmable Function Button (PF button)This button can be set up for special applications, such as high/low power selection, monitor, dimmer, talk-around, and call alert function, as determined by your network requirements and programmed by your VERTEX STANDARD dealer.Side PanelMicrophone Jack (It is on both sides.)Connect the microphone plug to this jack.REAR (Heatsink)ÀAntenna SocketThe 50-ohm coaxial feedline to the antenna must be connected here, using a type-M (PL-259) plug.ÁExternal Speaker JackAn external loudspeaker may be connected to this 2-contact, 3.5-mm mini-phone jack.Caution: Do not connect this line to ground, and be certain that the speaker has adequate capability to handle the audio output from the VX-5500.Â13.8-V DC Cable Pigtail w/ConnectorThe supplied DC power cable must be connected to this 2-pin connector. Use only the supplied fused cable, extended if necessary, for power connection.ÃDSUB 25-Pin Accessory ConnectorExternal TX audio line input, PTT (Push To Talk), Squelch, and external RX audio line output signal may be obtained from this connector for use with accessories such as data transmission/reception modems, ets.B ASIC O PERATION OF THE T RANSCEIVER Important! - Before turning on the radio the first time, confirm that the power connec-tions have been made correctly and that a proper antenna is connected to the antenna jack. Switching Power ON/OFFPush the POWER switch turn on the radio. The display will become illuminated. The radio will start up on the last channel used prior to shut-down during the previous operating session.Turn the CHANNEL selector knob to choose the desired operating channel. A chan-nel name will appear on the display. If you want to select the operating channel from a different Memory Channel Group, press the UP (p) or DOWN (q) button to select the Memory Channel Group you want before selecting the operating channel. Setting the VolumeTurn the VOLUME knob clockwise to increase the volume, and counterclockwise to decrease it. If no signal is present, press and hold in the MON button more than 1/2 seconds; background noise will now be heard, and you may use this to set the VOL-UME knob for the desired audio level. Press and hold the MON button more than 1/2 seconds to quiet the noise and resume normal (quiet) monitoring. TransmittingTo transmit, wait until the “BUSY” indicator is off (the channel is not in use), and press the PTT (Push-To-Talk) switch on the side of the microphone (the “TX” indica-tor will appear or the “TX” indicator will glow red). While holding in the PTT switch, speak across the face of the microphone in a clear, normal voice level, and then release the PTT switch to receive.Selecting Groups and Channelsm Press the UP (p) or DOWN (q) button (repeatedly, if necessary) to select a different group of channels.m Turn the CHANNEL selector knob to select a different channel within the current group.Automatic Time-Out TimerIf the selected channel has been programmed for automatic time-out, you must limit the length of each transmission. While transmitting, a beep will sound five seconds before time-out. Another beep will sound just before the deadline; the “TX” indicator will disappear and transmission will cease soon thereafter. To resume transmitting, you must release the PTT and wait for the “penalty timer” to expire (if you press the PTT before this timer expires, the timer restarts, and you will have to wait another “penalty” period)Programmable Function Button (PF button)The VX-5500 includes the seven Programmable Function Buttons (PF button). The PF button functions can be customized, via programming by your VERTEX STAN-DARD dealer, to meet your communications/network requirements. Some features may require the purchase and installation of optional internal accessories. The possible PF button programming features are illustrated at the below, and their functions are explained on page 8.For further details, contact your VERTEX STANDARD dealer. For future reference, check the box next to each function that has been assigned to the PF button on your particular radio, and keep it handy.* requires RMK-4000 ** requires Encryption UnitChannel ScanThe Scanning feature is used to monitor multiple signals programmed into the trans-ceiver. While scanning, the transceiver will check each channel for the presence of a signal, and will stop on a channel if a signal is present.To activate scanning:m Press the assigned PF button of the “Scan” momentarily to activate scanning.m The scanner will search the channels, looking for active ones; it will pause each time it finds a channel on which someone is speaking.To stop scanningm Press the assigned PF button of the “Scan”.m Operation will revert to the channel to which the CHANNEL selector knob is set.Note:Your dealer may have programmed your radio to stay on one of the following channels if you press the PTT switch during scanning pause:r Current channel (“Talk Back”)r“Last Busy” channelr“Priority” channelr“Home” channelr“Scan Start” channelDual WatchThe Dual Watch feature is similar to the Scan feature, except that only two channels are monitored:r The current operating channel; andr The “Priority” channel.To activate Dual Watch:m Press the assigned PF button of the “Dual Watch”.m The scanner will search the two channels; it will pause each time it finds a channel on which someone is speaking.To stop Dual Watch:m Press the assigned PF button of the “Dual Watch”.m Operation will revert to the channel to which the CHANNEL selector knob is set.ARTS (Auto Range Transpond System)This system is designed to inform you when you and another ARTS-equipped station are within communication range.During ARTS operation, your radio automatically transmits for about 1 second every 25 (or 55) seconds (the interval is programmed by Dealer) in an attempt to Shake hands with the other station.If you move out of range for more than one minutes, your radio senses that no signal has been received, a ringing beeper will sound. If you subsequently move back into range, as soon as the other station transmits, your beeper will sound.The PF Button FunctionThe PF (Programmable Function) button can be programmed by the dealer to provide two of the other functions described below.To activate the primary Accessory function, press the PF button momentarily. To access the secondary Accessory function (which may include the Alarm), press and hold the PF button for 1.5 seconds or longer.Call/ResetWhen this feature is programmed and a selective call has been received, momen-tarily press the assigned PF button of the “Call/Reset” to reset the flashing indicator and mute the receiver, otherwise press the assigned PF button of the “Call/Reset” to sent your radio’s identification code (ANI) to the dispatcher.Talk-AroundThe feature causes the assigned PF button of the “Talk-Around” to select simplex operation on semi-duplex channels: the transmit frequency becomes the same as the receive frequency (regardless of any programmed offset for the channel).Note:This feature has no effect on simplex channels. After pressing the button,“-TAKARD-” is displayed on the LCD.Alpha NumericPress the assigned PF button of the “Alpha Numeric” to switch the display between the Group/Channel number, and the Group/Channel name (alphanumeric). A tone will sound each time you switch between numerical and alphanumerical display.DIMPress the assigned PF button of the “DIM” to adjust the brightness of the display and key backright.EMG (Emergency)Press the assigned PF button of the “EMG” to initiate an emergency call (requires ANI board). When an emergency call is made, not tone is emitted and the display does not change. To end the emergency call, turn the transceiver power OFF.HA (Horn Alert)Press the assigned PF button of the “HA” to turn the Horn Alert function ON or OFF. If you receive a call from the base station with 2Tone or DTMF signaling, horn alert will activate.” appears on the display. Home (Home Channel)Press the assigned PF button of the “Home” to select the pre-programmed Home Channel. Press it again to return to the previous channel. If used while scanning, pressing this key a second time will change to the revert channel.IC (Intercom)This feature requires dual head configuration. Press the assigned PF button of the “IC” to turn the intercom feature ON or OFF. While ON, you can press the PTTLow PowerPress the assigned PF button of the “Low Power” to set the radio's transmitter to the “Low Power” mode.Press this key again to return to “High Power” operation when in difficult terrain. GRP UP/DWNPress the assigned PF button of the “GRP UP” or “GRP DWN” to select a different group of channels.CH UP/DWNPress the assigned PF button of the “CH UP” or “CH DWN” to select a different channel within the current group.AUX A/B/CPress the assigned PF button of the “AUX A”, “AUX B”, or “AUX C” to turn the output port (respectively).PA (Public Address)Press the assigned PF button of the “PAMONI (Monitor)Press the assigned PF button of the “MONI” momentarily to cancel CTCSS and DCS signaling squelch; the “MON” icon appears on the display. Press and hold this key for 1/2 seconds to hear background noise (unmute the audio); the MON icon blinks on the display.RCL (Channel Recall)During scan, you can press the assigned PF button of the “RCL” to select the last called channel.ST (Selectable Tone)Press the assigned PF button of the “Selectable Tone”, then rotate the CHANNEL selector knob to select a 2-Tone.SPPress the assigned PF button of the “SPa call. However, all audio will be emitted from the PA speaker.SQL (Squelch Level)You can manually adjust the squelch level using this function:1. Press the assigned PF button of the “SQL”. A tone sounds and SQL appears onthe display with the current squelch level.2. Rotate the CHANNEL selector knob to select the desired level.3. Press the this key. A tone sounds and the display returns to the normal channel. COMP (Compander)Press the PF button assigned to the “COMP” function to turn the “Compander” IC ON or OFF.This IC contains two variable gain circuits configured for compressing and expand-ing the dynamic range of the radio's transmitted and received audio signal.When you enable this function, the signal-to-noise radio can be improved by reduc-ing the transmitted audio dynamic range.Encryption (Option)When the Voice Scrambler feature is enabled, pressing the assigned PF button of the “Encryption” toggles the Scrambler on and off.O PTIONAL A CCESSORIESMH-25B7A MicrophoneMH-53C7A Heavy Duty MicrophoneMH-53A7A Heavy Duty Microphone w/Noise CancelerMH-53B7A Heavy Duty DTMF Microphone w/Noise CancelerCE49Programming SoftwareCT-70Radio Programming Cable (Requires VPL-1)CT-71Radio to PC Programming CableCT-72Radio to Radio Programming CableCT-81Cable for RMK-4000 (6 m)CT-82Cable for RMK-4000 (2.5 m)CT-83Cable for RMK-4000 (0.6 m)CNT-6000Control HeadRF DECK RF Deck w/MMB-79 (for Dual Band Installations) RMK-4000SH Remote Kit (for Single Transceiver)RMK-4000DH Remote Kit (for Dual-Head Installations)RMK-4000DB Remote Kit (for Dual Band Installations)RMK-4000DBH Remote Kit (for Dual Band plus Dual Head Installations) F2D-82-Tone Decode Unit (Requires FIF-7)F5D-145-Tone ENC-DEC Unit (Requires FIF-7)VTP-50VX-Trunk Unit (Requires FIF-7)FVP-25Encryption/DTMF pager Unit (Requires FIF-7)FP-1030External 30A Power SupplyMLS-100Mobile Loud speaker (12 W Peak Power)MMB-79Mobile Mounting BracketMMB-77Locking Mobile Mounting BracketFIF-7Inter face Board (for F2D-8, F5D-14, VTP-50, FVP-25) CN-6Inter face Board (for Accessories)Note:This device complies with Part 15 of the FCC rules.Operation is subject to the condition that this device does not cause harmful interference.Part 15.21: Changes or modifications to this device not expressly ap-proved by Vertex Standard could void the user’s authorization to oper-Copyright 2003VERTEX STANDARD CO., LTD. All rights reservedNo portion of this manualmay be reproduced withoutthe permission ofVERTEX STANDARD CO., LTD. Printed in Japan.。