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bfr 280w中文资料

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BFR 280W

Oct-25-19991NPN Silicon RF Transistor󰀁 For low noise, low-power amplifiers in mobile communication systems (pager, cordless telephone) at collector currents from 0.2 mA to 8 m󰀁 fT = 7.5 GHz F = 1.5 dB at 900 MHz

13

VSO055612

ESD: Electrostatic discharge sensitive device, observe handling precaution!TypeMarkingPin ConfigurationPackageBFR 280WREs1 = B2 = E3 = CSOT-323Maximum RatingsParameterSymbolUnitValueCollector-emitter voltage8VCEOVCollector-emitter voltageVCES10Collector-base voltage10VCBO2VEBOEmitter-base voltageCollector currentIC10mABase currentIB1.2Total power dissipation, TS = 115 °C 1)Ptot80mWJunction temperatureTj150°CAmbient temperatureTA-65 ... 150Storage temperatureTstg-65 ... 150Thermal ResistanceJunction - soldering pointRthJS󰀁 435K/W

1TS is measured on the collector lead at the soldering point to the pcbBFR 280W

Oct-25-19992Electrical Characteristics at TA = 25°C, unless otherwise specified.ParameterSymbolValuesUnitmin.typ.max.DC characteristicsCollector-emitter breakdown voltage IC = 1 mA, IB = 0 V(BR)CEO8--VCollector-emitter cutoff current VCE = 10 V, VBE = 0 ICES--100µACollector-base cutoff current VCB = 8 V, IE = 0 ICBO--100nAEmitter-base cutoff current VEB = 1 V, IC = 0 IEBO--1µADC current gain IC = 3 mA, VCE = 5 VhFE30100200-BFR 280W

Oct-25-19993Electrical Characteristics at TA = 25°C, unless otherwise specified.ParameterSymbolValuesUnitmin.typ.max.AC characteristics (verified by random sampling)Transition frequency IC = 6 mA, VCE = 5 V, f = 500 MHzfT57.5-GHzCollector-base capacitance VCB = 5 V, f = 1 MHzCcb-0.270.45pFCollector-emitter capacitance VCE = 5 V, f = 1 MHzCce-0.18-Emitter-base capacitance VEB = 0.5 V, f = 1 MHzCeb-0.22-Noise figure IC = 1.5 mA, VCE = 5 V, ZS = ZSopt , f = 900 MHz f = 1.8 GHzF -- 1.52 --dB

Power gain, maximum stable 1) IC = 3 mA, VCE = 5 V, ZS = ZSopt, ZL = ZLopt , f = 900 MHz f = 1.8 GHzGms -- 17.513.5 --Transducer gain IC = 3 mA, VCE = 5 V, ZS = ZL = 50󰀂 , f = 900 MHz IC = 3 mA, VCE = 5 V|S21e|2 -- 149 --

1Gms = |S21 / S12|BFR 280W

Oct-25-19994SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax) :Transistor Chip DataIS =6.472fAVAF =25.609VNE =1.6163-VAR =5.6909VNC =1.0651-RBM =14.999󰀁CJE =36.218fFTF =11.744psITF =6.2179mAVJC =1.1943VTR =2.3693nsMJS =0-XTI =3-BF =89.888-IKF =0.073457ABR =20.238-IKR =0.012696ARB =15󰀁RE =2.4518󰀁VJE =0.70035VXTF =0.21585-PTF =0degMJC =0.30017-CJS =0fFXTB =0-FC =0.96275-NF =1.0801-ISE =15.596fANR =0.83403-ISC =1.409fAIRB =0.031958mARC =6.989󰀁MJE =0.69773-VTF =0.2035VCJC =252.99fFXCJC =0.19188-VJS =0.75VEG =1.11eVTNOM300KAll parameters are ready to use, no scalling is necessary.Extracted on behalf of SIEMENS Small Signal Semiconductors by:Institut für Mobil-und Satellitentechnik (IMST)󰀁 1996 SIEMENS AG Package Equivalent Circuit:LBI = 0.57nHLBO = 0.4nHLEI = 0.43nHLEO = 0.5nHLCI = 0nHLCO = 0.41nHCBE = 61fFCCB = 101fFCCE = 175fFValid up to 6GHzFor examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies CD-ROM or see Internet: http://www.infineon.com/products/discrete/index.htmBFR 280W

Oct-25-19995Total power dissipation Ptot = f (TA*, TS) * Package mounted on epoxy

020406080100120°C150 TA,TS0 10 20 30 40 50 60 70 80 mW100

Ptot TS TA

Permissible Pulse Load RthJS = f (tp)

10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp1 10 2 10 3 10 K/W RthJS 0.50.20.10.050.020.010.005D = 0Permissible Pulse Load Ptotmax/PtotDC = f (tp)

10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp 0 10 1 10

- Ptotmax / PtotDC D = 00.0050.010.020.050.10.20.5BFR 280W

Oct-25-19996Collector-base capacitance Ccb = f (VCB) f = 1MHz

02468V11 VCB 0.0 0.1 0.2 0.3 pF0.5

Ccb Transition frequency fT = f (IC) VCE = Parameter

02468mA11 IC 0 1 2 3 4 5 6 7 8 9 GHz11

fT 10V8V5V3V2V1V0.7V

Power Gain Gma, Gms = f(IC) f = 0.9GHz VCE = Parameter

02468mA11 IC 6 8 10 12 14 16 dB20

G 10V2V1V0.7VPower Gain Gma, Gms = f(IC) f = 1.8GHz VCE = Parameter

02468mA11 IC 0 2 4 6 8 10 dB14

G 10V3V2V1V0.7VBFR 280W

Oct-25-19997Intermodulation Intercept Point IP3=f(IC) (3rd order, Output, ZS=ZL=50󰀂) VCE = Parameter, f = 900MHz

02468mA11 IC -12 -8 -4 0 4 8 12 dBm20

IP3 8V5V3V2V1VPower Gain Gma, Gms = f(VCE):_____ |S21|2 = f(VCE):--------- f = Parameter

02468V12 VCE 4 6 8 10 12 14 dB18

G 0.9GHz1.8GHz0.9GHz1.8GHzIC=3mA

Power Gain |S21|2= f(f) VCE = Parameter

0.00.51.01.52.02.5GHz3.5 f 0 2 4 6 8 10 12 14 16 dB20

S21

1V0.7V10VIC=3mAPower Gain Gma, Gms = f(f) VCE = Parameter

0.00.51.01.52.02.5GHz3.5 f 0 5 10 15 20 dB30

G 10V0.7V1VIC=3mA