当前位置：文档之家 › bfr 280w中文资料

bfr 280w中文资料

  • 格式：pdf
  • 大小：117.35 KB
  • 文档页数：7

下载文档原格式

  / 7

合集下载

  1. 1、下载文档前请自行甄别文档内容的完整性，平台不提供额外的编辑、内容补充、找答案等附加服务。
  2. 2、"仅部分预览"的文档,不可在线预览部分如存在完整性等问题,可反馈申请退款(可完整预览的文档不适用该条件!)。
  3. 3、如文档侵犯您的权益，请联系客服反馈,我们会尽快为您处理(人工客服工作时间：9:00-18:30)。

NPN Silicon RF Transistor

For low noise, low-power amplifiers in mobile

communication systems (pager, cordless

telephone) at collector currents from 0.2 mA to 8 m f T = 7.5 GHz

F = 1.5 dB at 900 MHz

1

3

VSO05561

2

ESD : E lectro s tatic d ischarge sensitive device, observe handling precaution!

Type Marking Pin Configuration

Package BFR 280W REs

1 = B

2 = E

3 = C

SOT-323Maximum Ratings Parameter

Symbol Unit

Value

Collector-emitter voltage 8V CEO V

Collector-emitter voltage V CES 10Collector-base voltage 10V CBO 2V EBO Emitter-base voltage Collector current I C 10mA Base current

I B 1.2Total power dissipation , T S = 115 °C 1)P tot 80mW Junction temperature T j 150°C

Ambient temperature T A -65 ... 150Storage temperature T stg -65 (150)

Thermal Resistance

Junction - soldering point

R thJS

435K/W

1T S

is measured on the collector lead at the soldering point to the pcb

Electrical Characteristics at T A = 25°C, unless otherwise specified.

Parameter Symbol Values Unit

min.typ.max.

DC characteristics

Collector-emitter breakdown voltage

V(BR)CEO8--V

I C = 1 mA, I B = 0

I CES--100µA Collector-emitter cutoff current

V CE = 10 V, V BE = 0

Collector-base cutoff current

I CBO--100nA V CB = 8 V, I E = 0

Emitter-base cutoff current

I EBO--1µA V EB = 1 V, I C = 0

DC current gain

h FE30100200-

I C = 3 mA, V CE = 5 V

Electrical Characteristics at T A = 25°C, unless otherwise specified.

Parameter Symbol Values Unit

min.typ.max.

AC characteristics(verified by random sampling)

Transition frequency

I C = 6 mA, V CE = 5 V, f = 500 MHz

f T57.5-GHz

Collector-base capacitance

V CB = 5 V, f = 1 MHz

C cb-0.270.45pF

Collector-emitter capacitance

V CE = 5 V, f = 1 MHz

C ce-0.18-

Emitter-base capacitance

V EB = 0.5 V, f = 1 MHz

C eb-0.22-

Noise figure

I C = 1.5 mA, V CE = 5 V, Z S = Z Sopt , f = 900 MHz

f = 1.8 GHz F

-

-

1.5

2

-

-

dB

Power gain, maximum stable 1)

I C = 3 mA, V CE = 5 V, Z S = Z Sopt, Z L = Z Lopt , f = 900 MHz

f = 1.8 GHz G ms

-

-

17.5

13.5

-

-

Transducer gain

I C = 3 mA, V CE = 5 V, Z S = Z L = 50 , f = 900 MHz

I C = 3 mA, V CE = 5 V |S21e|2

-

-

14

9

-

-

1G ms = |S21 / S12|

相关主题