SM6GZ47中文资料
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: VISOL = 1500V AC
MAXIMUM RATINGS
CHARACTERISTIC
Repetitive Peak Off−State Voltage and Repetitive GZ47 SM6GZ47A
SM6JZ47 SM6JZ47A
R.M.S On−State Current (Full Sine Waveform Tc = 90°C)
30
―
―
30
―
―
30
―
―
―
mA
―
―
20
―
―
20
―
―
20
―
―
―
―
―
1.5
V
0.2
―
―
V
―
―
50
mA
―
―
3.8 °C / W
―
300
―
V / µs
―
200
―
10
―
―
V / µs
4
―
―
MARKING
* NUMBER *1 *2 *3
SYMBOL
TOSHIBA PRODUCT MARK
SM6GZ47, SM6GZ47A
Unit: mm
l Repetitive Peak Off−State Voltage l R.M.S ON−State Current l High Commutating (dv / dt) l Isolation Voltage
: VDRM = 400, 600V : IT (RMS) = 6A
RESTRICTIONS ON PRODUCT USE
000707EAA
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc..
· The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk.
T2 (+), Gate (+)
T2 (+), Gate (−)
T2 (−), Gate (−)
VD = 12V RL = 20Ω
T2 (−), Gate (+) T2 (+), Gate (+)
T2 (+), Gate (−)
T2 (−), Gate (−)
T2 (−), Gate (+)
ITM = 9A VD = Rated, Tc = 125°C VD = 12V, ITM = 1A Junction to Case
· The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others.
· The information contained herein is subject to change without notice.
5
2001-07-13
W W V A °C °C V
JEDEC JEITA TOSHIBA Weight: 1.7g
― ― 13−10H1A
Note 1: di / dt test condition VDRM = 0.5×Rated ITM ≤ 9A tgw ≥ 10µs tgr ≤ 250ns igp = IGT×2.0
元器件交易网
SM6GZ47,SM6JZ47,SM6GZ47A,SM6JZ47A
TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE
SM6GZ47,SM6JZ47,SM6GZ47A,SM6JZ47A
AC POWER CONTROL APPLICATIONS
TYPE
SM6JZ47, SM6JZ47A
SM6GZ47A, SM6JZ47A
*4
MARK
M6GZ47 M6JZ47
A Example
8A : January 1998 8B : Febrary 1998 8L : December 1998
2
2001-07-13
元器件交易网
1
2001-07-13
元器件交易网
SM6GZ47,SM6JZ47,SM6GZ47A,SM6JZ47A
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC
Repetitive Peak Off−State Current
SM6GZ47,SM6JZ47,SM6GZ47A,SM6JZ47A
3
2001-07-13
元器件交易网
SM6GZ47,SM6JZ47,SM6GZ47A,SM6JZ47A
4
2001-07-13
元器件交易网
SM6GZ47,SM6JZ47,SM6GZ47A,SM6JZ47A
SM6GZ47A SM6JZ47A
SYMBOL
TEST CONDITION
IDRM VGT
IGT
VTM VGD
IH Rth (j−c)
VDRM = Rated
T2 (+), Gate (+)
VD = 12V RL = 20Ω
T2 (+), Gate (−) T2 (−), Gate (−)
T2 (−), Gate (+)
Peak One Cycle Surge On-State Current (Non−Repetitive) I2t Limit Value Critical Rate of Rise of On−State Current (Note 1) Peak Gate Power Dissipation Average Gate Power Dissipation Peak Gate Voltage Peak Gate Current Junction Temperature Storage Temperature Range Isolation Voltage (AC, t = 1min.)
I
II Gate Trigger Voltage
III
IV
I
SM6GZ47
II
SM6JZ47
III
Gate Trigger
IV
Current
I
SM6GZ47A
II
SM6JZ47A
III
IV
Peak On−State Voltage
Gate Non−Trigger Voltage
Holding Current
SYMBOL
VDRM
IT (RMS)
ITSM I2t
di / dt PGM PG (AV) VFGM IGM
Tj Tstg VISOL
RATING
400
600
6 60 (50Hz) 66 (60Hz)
18 50 5 0.5 10 2 −40~125 −40~125 1500
UNIT
V
A
A
A2s
A / µs
dv / dt
VDRM = Rated, Tj = 125°C Exponential Rise
(dv / dt) c
VDRM = 400V, Tj = 125°C (di /dt) c = −3.3A / ms
MIN TYP. MAX UNIT
―
―
20
µA
―
―
1.5
―
―
1.5
V
―
―
1.5
―
―
―
―
―
Thermal Resistance
Critical Rate of Rise of Off−State Voltage
SM6GZ47 SM6JZ47
SM6GZ47A SM6JZ47A
Critical Rate of Rise of Off−State Voltage at Commutation
SM6GZ47 SM6JZ47
MAXIMUM RATINGS
CHARACTERISTIC
Repetitive Peak Off−State Voltage and Repetitive GZ47 SM6GZ47A
SM6JZ47 SM6JZ47A
R.M.S On−State Current (Full Sine Waveform Tc = 90°C)
30
―
―
30
―
―
30
―
―
―
mA
―
―
20
―
―
20
―
―
20
―
―
―
―
―
1.5
V
0.2
―
―
V
―
―
50
mA
―
―
3.8 °C / W
―
300
―
V / µs
―
200
―
10
―
―
V / µs
4
―
―
MARKING
* NUMBER *1 *2 *3
SYMBOL
TOSHIBA PRODUCT MARK
SM6GZ47, SM6GZ47A
Unit: mm
l Repetitive Peak Off−State Voltage l R.M.S ON−State Current l High Commutating (dv / dt) l Isolation Voltage
: VDRM = 400, 600V : IT (RMS) = 6A
RESTRICTIONS ON PRODUCT USE
000707EAA
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc..
· The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk.
T2 (+), Gate (+)
T2 (+), Gate (−)
T2 (−), Gate (−)
VD = 12V RL = 20Ω
T2 (−), Gate (+) T2 (+), Gate (+)
T2 (+), Gate (−)
T2 (−), Gate (−)
T2 (−), Gate (+)
ITM = 9A VD = Rated, Tc = 125°C VD = 12V, ITM = 1A Junction to Case
· The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others.
· The information contained herein is subject to change without notice.
5
2001-07-13
W W V A °C °C V
JEDEC JEITA TOSHIBA Weight: 1.7g
― ― 13−10H1A
Note 1: di / dt test condition VDRM = 0.5×Rated ITM ≤ 9A tgw ≥ 10µs tgr ≤ 250ns igp = IGT×2.0
元器件交易网
SM6GZ47,SM6JZ47,SM6GZ47A,SM6JZ47A
TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE
SM6GZ47,SM6JZ47,SM6GZ47A,SM6JZ47A
AC POWER CONTROL APPLICATIONS
TYPE
SM6JZ47, SM6JZ47A
SM6GZ47A, SM6JZ47A
*4
MARK
M6GZ47 M6JZ47
A Example
8A : January 1998 8B : Febrary 1998 8L : December 1998
2
2001-07-13
元器件交易网
1
2001-07-13
元器件交易网
SM6GZ47,SM6JZ47,SM6GZ47A,SM6JZ47A
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC
Repetitive Peak Off−State Current
SM6GZ47,SM6JZ47,SM6GZ47A,SM6JZ47A
3
2001-07-13
元器件交易网
SM6GZ47,SM6JZ47,SM6GZ47A,SM6JZ47A
4
2001-07-13
元器件交易网
SM6GZ47,SM6JZ47,SM6GZ47A,SM6JZ47A
SM6GZ47A SM6JZ47A
SYMBOL
TEST CONDITION
IDRM VGT
IGT
VTM VGD
IH Rth (j−c)
VDRM = Rated
T2 (+), Gate (+)
VD = 12V RL = 20Ω
T2 (+), Gate (−) T2 (−), Gate (−)
T2 (−), Gate (+)
Peak One Cycle Surge On-State Current (Non−Repetitive) I2t Limit Value Critical Rate of Rise of On−State Current (Note 1) Peak Gate Power Dissipation Average Gate Power Dissipation Peak Gate Voltage Peak Gate Current Junction Temperature Storage Temperature Range Isolation Voltage (AC, t = 1min.)
I
II Gate Trigger Voltage
III
IV
I
SM6GZ47
II
SM6JZ47
III
Gate Trigger
IV
Current
I
SM6GZ47A
II
SM6JZ47A
III
IV
Peak On−State Voltage
Gate Non−Trigger Voltage
Holding Current
SYMBOL
VDRM
IT (RMS)
ITSM I2t
di / dt PGM PG (AV) VFGM IGM
Tj Tstg VISOL
RATING
400
600
6 60 (50Hz) 66 (60Hz)
18 50 5 0.5 10 2 −40~125 −40~125 1500
UNIT
V
A
A
A2s
A / µs
dv / dt
VDRM = Rated, Tj = 125°C Exponential Rise
(dv / dt) c
VDRM = 400V, Tj = 125°C (di /dt) c = −3.3A / ms
MIN TYP. MAX UNIT
―
―
20
µA
―
―
1.5
―
―
1.5
V
―
―
1.5
―
―
―
―
―
Thermal Resistance
Critical Rate of Rise of Off−State Voltage
SM6GZ47 SM6JZ47
SM6GZ47A SM6JZ47A
Critical Rate of Rise of Off−State Voltage at Commutation
SM6GZ47 SM6JZ47