Uvisor_SF810i_样本P
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ZEISS Xradia 410 VersaSubmicron X-ray Imaging: Bridge the Gap in Lab-based MicroscopyProduct Information Version 1.1Xradia 410 Versa bridges the gap between high-performing X-ray microscopes and less powerful, lower-cost computed tomography (CT) systems. Delivering non-destructive 3D imaging with industry best resolution, contrast, and in situ capabilities, Xradia 410 Versa enables you to achieve groundbreaking research for the widest range of sample sizes. Enhance imaging workflow with this powerful, cost-efficient "workhorse" solution, even in diverse lab environments.A Workhorse Solution for Your 3D Submicron Imaging› In Brief › The Advantages › The Applications › The System› Technology and Details › ServiceSimpler. More Intelligent. More Integrated.Extend the Boundaries of ScienceXradia 410 Versa X-ray microscope delivers cost-efficient, flexible 3D imaging to enable you to address a wide range of samples and research environments. Non-destructive X-ray imaging preserves and extends the use of your valuable samples over time. The instrument achieves0.9 μm true spatial resolution with minimum achievable voxel size of 100 nm. Advanced absorption and phase contrast (for soft orlow-Z materials) offer you more versatility to overcome the limitations of traditional computed tomography approaches.Your Premier 4D / In Situ SolutionNon-destructive X-ray microscopes allow youto uniquely characterize the microstructure ofmaterials in their native environments—in situ—as well as to understand the evolution of proper-ties over time (4D). RaaD capabilities enableyou to maintain submicron resolution across abroad spectrum of sample dimensions in nativeenviron m ents and to use a wide range of in siturigs. The Xradia Versa In Situ Kit makes set-upoptimal and operation easy with a faster timeto results.Achieve Performance Beyond Micro-CTXradia Versa solutions extend scientific researchbeyond the limits of projection-based micro- andnano-CT systems. Where traditional tomographyrelies on a single stage of geometric magnifica-tion, Xradia 410 Versa features a unique two-stage process based on synchrotron-caliber optics.You will find it easy to use, with flexible contrast,while its breakthrough Resolution at a Distance(RaaD) enables you to achieve unprece d entedlab-based exploration for a diverse array ofapplications, sample types and sizes. And, multi-length scale capabilities enable you to imagethe same sample across a wide range of magnifi-cations. Additionally, the Scout-and-Scan controlsystem enables an efficient workflow environmentwith recipe-based set-up that makes Xradia 410Versa easy for users with a wide variety ofexperience levels.› In Brief› The Advantages› The Applications› The System› Technology and Details › ServiceScintillatorCCDObjective Your Insight into the Technology Behind Ithigh resolution.using flexible working distances and workflow efficiencies for a diverse array of applications and samples.› In Brief› The Advantages › The Applications › The System› Technology and Details › ServiceZEISS XRM Two-stage Magnification ArchitectureR e s o l u t i o n (µm )L o wH i g hClearance around sample rotation axis (mm)High resolution is maintained for large samplesdistances. This enables you to study the widest range of sample sizes effectively, including within in situ chambers.› ServiceYour Insight into the Technology Behind ItAchieving True ResolutionXradia Versa solutions enable you to achieve powerful 3D X-ray imagingmaintaining true submicron spatial resolution across varying distances, sample sizes, and environments. ZEISS XRM are specified on true spatial resolution, the most meaningful measurement of a microscope’s performance.Spatial resolution refers to the minimum separation at which you can resolve a feature pair with an imaging system. It is typically measured by imaging astandardized resolution target with progressively smaller line-space pairs. Spatial resolution accounts for critical characteristics such as X-ray source spot size, detector resolution, magnification geometry, and vibrational, electrical and thermal stability. Other terms such as “voxel,” “spot size,” "detail detectability," and “nominal resolution” do not provide you with an understanding of full system performance.› In Brief› The Advantages › The Applications › The System› Technology and Details › ServiceYour Insight into the Technology Behind ItAn Edge In ContrastYou require superior contrast capabilities to reveal details needed to visualize and quantify features. Xradia Versa deliver flexible, high contrast imaging for even your most challenging materials – low atomic number (low Z) materials, soft tissue, polymers, fossilized organisms encased in amber, and other materials of low contrast.Our comprehensive approach employs proprietary Enhanced Absorption ContrastDetectors that achieve superior contrast by maximizing collection of low energy photons while minimizing collection of contrast-reducing high energy photons. In addition, Tunable Propagation Phase Contrast measures the refraction of X-ray photons at material transitions to allow you to visualize features displaying little or no contrast during absorption imaging.Pear imaged with absorption contrast – no visibility of cell walls (left), and pear imaged with phase contrast, showing details ofcell walls in normal cells and stone cells (right).› In Brief› The Advantages› The Applications› The System› Technology and Details › ServiceTailored Precisely to Your Applications› The Advantages› The Applications› The System› Technology and Details› ServiceLarge flip chip (10x10x1 mm) imaged at high resolutionUnstained water in Ottawa sand, imaged in a 12.5 mm diameter aluminum tubeComposite material of polyurethane, EDPM, metal oxides and high melting explosiveMurine breast tissueZEISS Xradia 410 Versa at WorkNatural Resources Materials ResearchElectronicsLife Sciences125 µm5 mm0.7 mm1 mm› In Brief › The Advantages › The Applications › The System› Technology and Details › Service1211910768354Your Flexible Imaging Solution4 System Stability for Best Imaging • Granite base vibrational isolation • Thermal environment stabilization • Low noise detector• Proprietary stabilization mechanisms5 System Flexibility for Diverse Range of Sample Sizes• Variable scanning geometry • Tunable voxel sizes• Absorption contrast mode • Phase contrast mode• Wide Field Mode (WFM) for increased lateral tomography volume with 0.4X objective• Vertical Stitching for joining multiple tomographies vertically6 Autoloader Option• Maximize productivity by reducing user intervention • Programmable handling of up to 14 samples• Automated workflows for high volume, repetitive scanning7 Sample Stage• Ultra-high precision 8-degrees of freedom sample stage 15 kg sample mass capacity8 X-ray Filters • Single filter holder• Set of 12 filters included• Custom filters available by special order 9 In Situ and 4D Solutions• Resolution at a Distance (RaaD) enables superior in situ imaging • I ntegrated in situ recipe control for Deben stages • In situ interface kit option • Custom in situ flow interface kit by special order 10 Instrument Workstation• Power workstation with fast reconstruction • Single CUDA-based GPU • Multi-core CPU • 24” display monitor11 Software• Acquisition: Scout-and-Scan Control System • Reconstruction: XMReconstructor • Viewer: XM3DViewer• Compatible with wide range of 3D viewers and analysis software programs• ORS Visual SI for 3D visualization and analysis (optional)1 X-ray Microscope• ZEISS Xradia 410 Versa with Resolution at a Distance 2 Source Options• Light materials, closed reflection source (20 – 90 kV, maximum 8 W)• High energy, closed reflection source (40 – 150 kV, maximum 10 W)• High power, closed reflection source (40 – 150 kV, maximum 30 W)3 Contrast-optimized Detectors• Innovative dual-stage detector system with detector turret of multiple objectives at different magnifications with optimized scintillators for highest contrast• 2k x 2k pixel, noise suppressed charge-coupled detector› In Brief › The Advantages › The Applications › The System› Technology and Details › ServiceTechnical Specifications› In Brief› The Advantages› The Applications› The System› Technology and Details› ServiceBecause the ZEISS microscope system is one of your most important tools, we make sure it is always ready to perform. What’s more, we’ll see to it that you are employing all the options that get the best from your microscope. You can choose from a range of service products, each delivered by highly qualified ZEISS specialists who will support you long beyond the purchase of your system. Our aim is to enable you to experience those special moments that inspire your work.Repair. Maintain. Optimize.Attain maximum uptime with your microscope. A ZEISS Protect Service Agreement lets you budget for operating costs, all the while reducing costly downtime and achieving the best results through the improved performance of your system. Choose from service agreements designed to give you a range of options and control levels. We’ll work with you to select the service program that addresses your system needs and usage requirements, in line with your organization’s standard practices.Our service on-demand also brings you distinct advantages. ZEISS service staff will analyze issues at hand and resolve them – whether using remote maintenance software or working on site. Enhance Your Microscope System.Your ZEISS microscope system is designed for a variety of updates: open interfaces allow you to maintain a high technological level at all times. As a result you’ll work more efficiently now, while extending the productive lifetime of your microscope as new update possibilities come on stream.Profit from the optimized performance of your microscope system with a Carl Zeiss service contract – now and for years to come.Count on Service in the True Sense of the Word>> /microservice› In Brief › The Advantages › The Applications › The System› Technology and Details › ServiceThe moment exploration becomes discovery.This is the moment we work for.// X-RAY MICROSCOPYMADE BY ZEISS› In Brief › The Advantages › The Applications › The System› Technology and Details › ServiceE N _40_011_004 | C Z 05-2014 | D e s i g n , s c o p e o f d e l i v e r y a n d t e c h n i c a l p r o g r e s s s u b j e c t t o c h a n g e w i t h o u t n o t i c e . | © C a r l Z e i s s M i c r o s c o p y G m b HCarl Zeiss Microscopy GmbH 07745 Jena, Germany BioSciences and Materials ********************/xrm。
OOOSwitching time WaveformsFigure 1: WaveformsOb so l e t ePr od u c t (s ) -O bs o l e t eP r od u c t (s) Solution 2: A diode (D GND ) in the ground line.A resistor (R GND =1k Ω) should be inserted in parallel to D GND if the device will be driving an inductive load.This small signal diode can be safely shared amongst several different HSD. Also in this case, the presence of the ground network will produce a shift (j 600mV) in the input threshold and the status output values if the microprocessor ground is not common with the device ground. This shift will not vary if more than one HSD shares the same diode/resistor network.Series resistor in INPUT and STATUS lines are also required to prevent that, during battery voltage transient,the current exceeds the Absolute Maximum Rating.Safest configuration for unused INPUT and STATUS pin is to leave them unconnected.LOAD DUMP PROTECTIOND ld is necessary (Voltage Transient Suppressor) if the load dump peak voltage exceeds V CC max DC rating. Thesame applies if the device will be subject to transients on the V CC line that are greater than the ones shown in the ISO T/R 7637/1 table.µC I/Os PROTECTION:If a ground protection network is used and negative transient are present on the V CC line, the control pins will be pulled negative. ST suggests to insert a resistor (R prot )in line to prevent the µC I/Os pins to latch-up.The value of these resistors is a compromise between the leakage current of µC and the current required by the HSD I/Os (Input levels compatibility) with the latch-up limit of µC I/Os.-V CCpeak /I latchup ≤ R prot ≤ (V OH µC -V IH -V GND ) / I IHmax Calculation example:For V CCpeak = - 100V and I latchup ≥ 20mA; V OH µC ≥ 4.5V 5k Ω ≤ R prot ≤ 65k Ω.Recommended R prot value is 10k Ω.OOPEN LOAD DETECTION IN OFF STATEOff state open load detection requires an external pull-up resistor (R PU ) connected between OUTPUT pin and a positive supply voltage (V PU ) like the +5V line used to supply the microprocessor.The external resistor has to be selected according to the following requirements:1) no false open load indication when load is connected:in this case we have to avoid V OUT to be higher than V Olmin ; this results in the following condition V OUT =(V PU /(R L +R PU ))R L <V Olmin.2) no misdetection when load is disconnected: in this case the V OUT has to be higher than V OLmax ; this results in the following condition R PU <(V PU–V OLmax )/I L(off2).Because I s(OFF) may significantly increase if V out is pulled high (up to several mA), the pull-up resistor R PU should be connected to a supply that is switched OFF when the module is in standby.The values of V OLmin , V OLmax and I L(off2) are available in the Electrical Characteristics section.Open Load detection in off stateu t (s ) -O bs o l eP r od u c t (sThermal calculation according to the PCB heatsink area= Thermal resistance Junction to Ambient with one chip ON= Thermal resistance Junction to Ambient with both chips ON and P dchip1dchip2= Mutual thermal resistancethj-amb Vs. PCB copper area in open box free air conditionChip 1Chip 2jchip1jchip2NoteON OFF R thA x P dchip1 + T R thC x P dchip1amb OFF ON R thC x P dchip2 + T R thA x P dchip2ambON ON R thB x (P dchip1 + P dchip2) + T ambR thB x (P dchip1dchip2) + T amb P dchip1=P dchip2ONON(R thA x P dchip1) + R x P dchip2 + T amb(R thA x P dchip2thC x P dchip1 + T amb P dchip1≠P dchip2Layout condition of R th and Z measurements (PCB FR4 area= 58mm x 58mm, PCB thickness=2mm,Cu thickness=35µm, Copper areas: 0.5cm 2, 3cm 2, 6cm 2).RTHj_ambb so l e t ePr od u c t (s ) -O bs o l 19/20TAPE AND REEL SHIPMENT (suffix “13TR”)TAPE DIMENSIONSAccording to Electronic Industries Association (EIA) Standard 481 rev. A, Feb 1986All dimensions are in mm.Tape widthW 16Tape Hole Spacing P0 (± 0.1)4Component Spacing P12Hole Diameter D (± 0.1/-0) 1.5Hole Diameter D1 (min) 1.5Hole PositionF (± 0.05)7.5Compartment Depth K (max) 6.5Hole SpacingP1 (± 0.1)2Top cover tapeEndStartNo componentsNo componentsComponents500mm min500mm minEmpty components pocketssaled with cover er direction of feedOb so l e t ePr od u c t (s ) -O bs o l e t eP r od u c t (s) Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.The ST logo is a trademark of STMicroelectronics© 2003 STMicroelectronics - Printed in ITALY- All Rights Reserved.STMicroelectronics GROUP OF COMPANIESAustralia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia -Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.。