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SPP3467 P-Channel Enhancement Mode MOSFET 说明书

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SPP3467
P-Channel Enhancement Mode MOSFET DESCRIPTION APPLICATIONS
The SPP3467 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell
density , DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package.
z Power Management in Note book
z Portable Equipment z Battery Powered System z DC/DC Converter
z Load Switch
z
DSC
z LCD Display inverter FEATURES
PIN CONFIGURATION(TSOP-6P)
PART MARKING
-20V/-5.0A,R DS(ON)= 90m Ω@V GS =-4.5V -20V/-3.5A,R DS(ON)=110m Ω@V GS =-2.5V -20V/-1.7A,R DS(ON)=140m Ω@V GS =-1.8V
Super high density cell design for extremely low
R DS (ON)
Exceptional on-resistance and maximum DC
current capability TSOP-6P package design
TYPICAL CHARACTERISTICS
TYPICAL CHARACTERISTICS
TYPICAL CHARACTERISTICS
TSOP- 6P PACKAGE OUTLINE
Information provided is alleged to be exact and consistent. SYNC Power Corporation presumes no responsibility for the penalties of use of such information or for any violation of patents or other rights of third parties which may result from its use. No license is granted by allegation or otherwise under any patent or patent rights of SYNC Power Corporation. Conditions mentioned in this publication are subject to change without notice. This publication surpasses and replaces all information previously supplied. SYNC Power Corporation products are not authorized for use as critical components in life support devices or systems without express written approval of SYNC Power Corporation.
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©2004 SYNC Power Corporation – Printed in Taiwan – All Rights Reserved
SYNC Power Corporation
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