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AO4422中文资料

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Symbol
Typ Max 31405975R θJL 1624Maximum Junction-to-Lead C
Steady-State
°C/W
Thermal Characteristics Parameter
Units Maximum Junction-to-Ambient A t ≤ 10s R θJA °C/W °C/W Maximum Junction-to-Ambient A Steady-State AO4422
Symbol
Min Typ
Max
Units BV DSS 30
V 1T J =55°C
5I GSS 100nA V GS(th)1 1.8
3
V I D(ON)40
A 12.615T J =125°C
16.82119.624m Ωg FS 25S V SD 0.75
1V I S
4.3
A C iss 1040
pF C oss 180pF C rss 110pF R g 0.7ΩQ g (10V)19.8
nC Q g (4.5V)9.8nC Q gs 2.5nC Q gd 3.5nC t D(on) 4.5ns t r 3.9ns t D(off)17.4ns t f 3.2ns t rr 17.5ns Q rr 7.6
nC
Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge
I F =11A, dI/dt=100A/µs
Drain-Source Breakdown Voltage On state drain current
I D =250µA, V GS =0V V GS =4.5V, V DS =5V V GS =10V, I D =11A
Reverse Transfer Capacitance I F =11A, dI/dt=100A/µs Electrical Characteristics (T J =25°C unless otherwise noted)STATIC PARAMETERS Parameter
Conditions I DSS µA Gate Threshold Voltage V DS =V GS I D =250µA V DS =24V, V GS =0V
V DS =0V, V GS = ±20V Zero Gate Voltage Drain Current Gate-Body leakage current R DS(ON)
Static Drain-Source On-Resistance
Forward Transconductance Diode Forward Voltage m ΩV GS =4.5V, I D =10A
I S =1A,V GS =0V V DS =5V, I D =11A Total Gate Charge Gate Source Charge Gate resistance V GS =0V, V DS =0V, f=1MHz
Turn-On Rise Time Turn-Off DelayTime V GS =10V, V DS =15V, R L =1.35Ω, R GEN =3Ω
Turn-Off Fall Time Maximum Body-Diode Continuous Current
Input Capacitance Output Capacitance Turn-On DelayTime DYNAMIC PARAMETERS V GS =10V, V DS =15V, I D =11A
Total Gate Charge Gate Drain Charge V GS =0V, V DS =15V, f=1MHz SWITCHING PARAMETERS A: The value of R θJA is measured with the device mounted on 1in 2
FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2
FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The SOA curve provides a single pulse rating.。

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