2N60

UNISONIC TECHNOLOGIES CO., LTD
2N60 Power MOSFET
2 Amps, 600/650 Volts
N-CHANNEL MOSFET
DESCRIPTION
The UTC 2N60 is a high voltage MOSFET and is designed to
have better characteristics, such as fast switching time, low gate
charge, low on-state resistance and have a high rugged
avalanche characteristics. This power MOSFET is usually used at
high speed switching applications in power supplies, PWM motor
controls, high efficient DC to DC converters and bridge circuits.
FEATURES
* R DS(ON) = 5Ω@V GS = 10V
* Ultra Low gate charge (typical 9.0nC)
* Low reverse transfer capacitance (C RSS = typical 5.0 pF)
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
SYMBOL
1.Gate
*Pb-free plating product number: 2N60L
ORDERING INFORMATION
Ordering Number Pin Assignment
Normal Lead Free Plating
Package
1 2 3
Packing 2N60-x-TA3-T 2N60L-x-TA3-T TO-220
G
D
S Tube 2N60-x-TF3-T 2N60L-x-TF3-T
TO-220F
G
D
S Tube 2N60-x-TM3-T 2N60L-x-TM3-T TO-251
G
D
S Tube 2N60-x-TN3-R 2N60L-x-TN3-R TO-252
G
D
S
Tape
Reel 2N60-x-TN3-T 2N60L-x-TN3-T TO-252
G
D
S Tube Note: Pin Assignment: G: Gate D: Drain S: Source
ABSOLUTE MAXIMUM RATINGS (T C = 25℃, unless otherwise specified)
PARAMETER SYMBOL RATINGS UNIT
2N60-A 600 V
Drain-Source Voltage 2N60-B V DSS
650 V
Gate-Source Voltage V GSS ±30 V Avalanche Current (Note 1) I AR 2.0 A
T C = 25°C 2.0 A
Drain Current Continuous T C = 100°C I D
1.26 A
Drain Current Pulsed (Note 1) I DP 8.0 A
Single Pulsed (Note 2)E AS 140 mJ
Avalanche Energy
Repetitive (Note 1) E AR 4.5
mJ Peak Diode Recovery dv/dt (Note 3) dv/dt 4.5 V/ns
TO-220 32 W TO-220F 9 W
TO-251 25 W Total Power Dissipation TO-252 P D
20 W
Junction Temperature T J +150 Operating Temperature T OPR -55 ~ +150 Storage Temperature T STG -55 ~ +150
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER PACKAGE SYMBOL RATINGS UNIT
TO-251 65 TO-252 58
TO-220 43 Thermal Resistance Junction-Ambient TO-220F θJA
38
TO-251 5 TO-252 6
TO-220 4 Thermal Resistance Junction-Case TO-220F θJc
12
/W
ELECTRICAL CHARACTERISTICS (T J =25℃, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
OFF CHARACTERISTICS
2N60-A 600 V
Drain-Source Breakdown Voltage 2N60-B BV DSS V GS = 0V, I D = 250µA
650 V
Drain-Source Leakage Current I DSS V DS = 600V, V GS = 0V 10µA
Forward V GS = 30V, V DS = 0V 100nA
Gate-Source Leakage Current Reverse I GSS
V GS = -30V, V DS = 0V
-100nA Breakdown Voltage Temperature
Coefficient
BV DSS /T J I D = 250 µA, Referenced to 25°C 0.4 V/
ON CHARACTERISTICS Gate Threshold Voltage V GS(TH) V DS = V GS , I D = 250µA 2.0 4.0V Static Drain-Source On-State Resistance R DS(ON) V GS = 10V, I D =1A 3.8 5 Ω DYNAMIC CHARACTERISTICS Input Capacitance C ISS 270 350pF
Output Capacitance C OSS 40 50pF
Reverse Transfer Capacitance C RSS V DS =25V, V GS =0V, f =1MHz 5 7 pF
ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
SWITCHING CHARACTERISTICS Turn-On Delay Time t D (ON) 10 30ns Turn-On Rise Time t R 25 60ns Turn-Off Delay Time t D(OFF) 20 50ns
Turn-Off Fall Time t F
V DD =300V, I D =2.4A, R G =25Ω
(Note 4, 5) 25 60ns Total Gate Charge Q G 9.0 11nC
Gate-Source Charge Q GS 1.6 nC Gate-Drain Charge Q GD V DS =480V, V GS =10V, I D =2.4A
(Note , 5) 4.3 nC DRAIN-SOURCE DIODE CHARACTERISTICS Drain-Source Diode Forward Voltage V SD V GS = 0 V, I SD = 2.0 A 1.4V Continuous Drain-Source Current I SD 2.0 A Pulsed Drain-Source Current I SM 8.0 A
Reverse Recovery Time t RR 180 ns Reverse Recovery Charge Q RR V GS = 0 V, I SD = 2.4A, di/dt = 100 A/µs (Note4) 0.72 µC
Note: 1. Repetitive Rating : Pulse width limited by T J
2. L=64mH, I AS =2.0A, V DD =50V, R G =25 Ω, Starting T J = 25°C
3. I SD ≤ 2.4A, di/dt ≤200A/µs, V DD ≤ BV DSS , Starting T J = 25°C
4. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
TEST CIRCUITS AND WAVEFORMS
V DD
V GS (Driver)
I SD (D.U.T.)
Body Diode
Forward Voltage Drop
V DS (D.U.T.)
Fig. 1A Peak Diode Recovery dv/dt Test Circuit
Fig. 1B Peak Diode Recovery dv/dt Waveforms
TEST CIRCUITS AND WAVEFORMS(Cont.)
Fig. 2A Switching Test Circuit
Fig. 2B Switching Waveforms
Fig. 3A Gate Charge Test Circuit Fig. 3B Gate Charge Waveform
10V
L
Fig. 4A Unclamped Inductive Switching Test Circuit Fig. 4B Unclamped Inductive Switching Waveforms
TYPICAL CHARACTERISTICS
C a p a c i t a n c e (p F )
G a t e -S o u r c e V o l t a g e , V G S (V )
TYPICAL CHARACTERISTICS(Cont.)
D r a i n -S o u r c e B r e a k d o w n V o l t a g e , V D S S (N o r m a l i z e d )
D r a i n -S o u r c e O n -R e s i s t a n c e , R D S (O N ) (N o r m a l i z e d )
D r a i n C u r r e n t , I D (A )
D r a i n C u r r e n t , I D (A )。