Preparation of Copper Phthalocyanine Crystals Using Solvothermal Synthesis
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Design, Fabrication, and Performance Investigation of OrganicOptoelectronic DevicesChong-an DiABSTRACTOrganic optoelectronic materials and devices, which is also called …plastic electronics‟, att rached focus attention in past decade due to their potential application in large area and low cost flexible displays, solid-state lighting, radio frequency identification (RFID) cards and electronic papers etc. As important parts of organic optoelectronic devices, organic light-emitting diodes (OLEDs), organic field-effect transistors (OFETs) and organic light-emitting transistors (OLEFTs) have made great achievements. The performance of these optoelectronic devices depends not only on the properties of the organic semiconductors involved, but is also dramatically affected by the properties of other functional layers and the nature of the interfaces present. Therefore, interface engineering, a novel approach towards high-performance OFETs, is a vital task for organic optoelectronic devices. Electrode/organic interfaces, dielectric/organic interfaces, organic/organic interfaces and organic/atmosphere interfaces are the three frequently reported interfaces in organic devices. In this dissertation, a systematic research has been carried out centering on the interface engineering of organic optoelectronic devices. With investigation of interface phenomenon and effective interface modification, dramatic decrease of power consumption and cost, obvious ehancement of device performance and improvement of stability are achieved. The main results are obtained as follows:1: Exploration of novel anode modification approach for OLEDs to reduce the power consumption and enhance the efficiency.Power consumption and light emitting property are the key parameters for the real application of organic light-emitting diodes. In fact, modification of electrodes is a widely applied approach to improve device performance of OLEDs since it can optimize the devices performance without change of organic functional materials. We demonstrated that the improvement of interface contact between ITO anode and organic semiconductor layer can be realized by the introduction of ultrathinhexadecafluoro copper phthalocyanine (F16CuPc) layer. Besides, The modification brings on formation of dipole layer on the ITO surface, which in turn leads to workfunction enhancement of ITO anode and dramatic decrease of hole injection barrier. With device design and optimization, we fabricated high performance low-operation voltage single-layer, double-layer and multi-layer OLEDs with tris(8-quinolinolato)aluminum (Alq3) as emissive layer. For the single layer Alq3 devices, the modification of the anode results in the significant enhancement in the current efficiency by about 30 times. The operation voltage decrease obviously for double layer devices, with minimum turn-on voltage of 2.6 V. As for multilayer OLEDs, the maximum current efficiency up to 7.63 cd/A and low turn-on voltage of 2.89 V are obtained by improving carrier density in the combination zone and optimization of carrier balance. The performance is one of the best one for OLEDs with Alq3 light emitting layer(Patent Number:ZL 200510126485.X; Di CA, et al. Appl. Phys. Lett. 2007, 90, 133508;Di CA, et al. Appl. Phys. Lett. 2006, 89, 033502).2: Development of novel organic light-emitting transistor structure and realization of light emission under ambient atmosphere.Organic light-emitting transistor is a highly integrated organic optoelectronic devices since both field-effect and light emitting can be realized in the same channel simultaneously. With optimized photolithograph techniques, we fabricated OFETs with Au and Al serves as source and drain electrode, respectively. Then, the laterally arranged heterojunction structures are achieved by successively inclined deposition of the field-effect and light-emitting materials. It has been observed that introduction of Au-Al source-drain electrodes and laterally arranged heterojunction structures result in enhancement of electron injection and improved carrier density of both holes and electrons. Besides, the designed device structure offers an ideal and widely applicable one to realize effective integration of field-effect property and light emission. It is because the two kind of organic semiconductors could take full use of their own advantages. We fabricated both small molecular and polymer based OLEFTs with pentacene, Alq3and TPA-PPV, respectively(Patent Number: ZL 200610089448.0;ZL 200510130758.8; Di CA, et al. Appl. Phys. Lett. 2006, 88, 121907;Di CA, et al.Adv. Funct. Mater. 2007, 17, 1567.). The results constitute first demonstration of organic light-emitting transistor under ambient atmosphere(Cicoira, F. et al. Adv. Funct. Mater. 2007, 17, 3421;Cicoira, F. et al. J. Mater. Chem. 2008, 18, 158).3: Exploration of novel approach to fabricate high performance low-cost OFETs.Low cost plays dominant role in determining the further development of OFETs. Source-drain electrodes are important parts in OFETs. Gold has been the most widely applied source–drain electrode for OFETs to date, due to its high conductivity, good stability, and formation of excellentcontact with many p-type organic semiconductors. However, the high cost of gold is an adverse factor in practical applications. On the other hand, low-cost electrodes such as Cu and Ag, are unsuitable for most p-type OFETs due to their relatively low workfunction. We provide a simple method to modify the bottom contact Cu or Ag electrodes with organic charge transfer compounds (Cu-TCNQ or Ag-TCNQ). The modification enhanced the workfunction of electrodes and improved the electrode/organic semiconductor contact which results in dramatic improvement of carrier injection. Therefore, we fabricated low cost Cu or Ag based OFETs with device performance comparable with the one of Au based OFETs. Besides, we investigated the influence of electrode morphology on the device performance by the formation of nanosized Cu electrodes. It has been discovered that introduction of source-drain electrodes with proper roughness is helpful to reduce the contact resistance. Fabrication of OFETs based on many organic semiconductors proved that it is a universal approach to improve the performance of bottom contact devices(Patent Number: 200610089591.X;Di CA, et al. J. Am. Chem. Soc. 2006, 128, 16418; Di CA, et al. Phys. Chem. Phys. Chem.2008, 10, 2302 (Front Cover)). The result possess potential application in the patterning of organic crystals and construction of corresponding devices(Di CA et al. Chem. Mater. 2009, 21, 4873).4: Discovery and investigation of high performance top contact OFETs with Cu electrodes. The typical OFET electrode structure, with a bottom gate, can be divided into top-contact and bottom-contact configurations. With varied electrode deposition sequence, the OFETs with different electrode structure required different modification techniques and exhibit varied device performance. Top-contact OFETs usually have a good electrode/organic layer contact and exhibit high device performance. We discovered that many organic semiconductors based OFETs with Cu top-contact electrodes show comparable device performance with the one of Au top-contact devices. The most excellent performance up to 0.8 cm2V-1s-1 can be obtained for pentacene FETs with Cu top-contact. The high performance is result from good electrode/organic layer contact and the formation of Cu x O during the electrode deposition process or device storage in air. The spontaneous formed Cu x O possess matched energy level with many organic semiconductors and bring on improved device performance (Patent Application Number: 200710118153.6;Di CA, et al. Adv. Mater. 2008, 20, 1286.). The results thus provide an effective way towards high performance low cost top-contact OFETs (High-tech Materials Alert, 2008, 25, 9).5: Development of novel graphene patterning method and its applications in OFETs. Graphene, single or few layer of two dimensional graphite, received great interest among condensed physics and material sciences due to its unusual and stable structure. We developed a novel vapor deposition method with ethanol as the carbon source to fabricate patterned gragheneusing the patterned copper or silver and demonstrated its application in OFETs. The patterned graphene exhibit good contact with organic semiconductors, with low carrier injection barrier for p-type OFETs and can serve as excellent source-drain electrodes for OFETs. The pentacene based bottom-contact devices with channel length of 5 m can reach high mobility of 0.53 cm2V-1s-1 which is one of the best result for pentacene bottom contact devices with bare SiO2 dielectric layer (Patent Application Number: 200710177814.2; Di CA, et al.Adv. Mater. 2008, 20, 3289). The result demonstrates novel approach to fabricate patterned graphene and open a new application of graphene in OFETs (NPG, Asia Materials, /asia-materials/highlight.php?id=291;Pang, SP et al. Adv. Mater. 2009, 21, 3488;Cao Y, et al. Adv. Funct. Mater. 2009, 19, 2743). The result is the first experimental step towards integrating graphene and conjugated organics (Burghard, M. et al. Adv. Mater. 2009, 21,2586.).6: Discovery of relationship between the device stability and dielectric/organic layer interfaces and fabrication of high performance pentacene FETs.Device stability, a hot topic in the organic optoelectronic device field, is widely believed to be related to the properties of organic semiconductors. Pentacene is the most widely investigated organic semiconductor for OFETs. However, poor device stability is the key shortcomings that impede its real application. We discovered that the device stability of pentacene OFETs in air is strongly related to the properties of dielectric layers. The device performance of pentacene FETs with bare SiO2 can maintain for 7 months. By the investigation of relationship between the device stability and dielectric layer surface energy, we suggest the pentacene aggregation and phase transfer should be responsible for the device performance degradation for devices with low surface energy dielectric layer (OTS modified SiO2). We obtained high performance pentancene FETs with high mobility up to 1.8 cm2V-1s-1 and excellent stability by the optimization of dielectric layer(Di CA, et al. Phys. Chem. Chem. Phys. 2009, 11, 7268.).In summary, centering on investigation of interface phenomenon, we fabricated high performance OLEDs, OFETs and OLEFTs by the device design and optimization. Also, a series of novel interface approaches were explored to improving the device performance and stability, lowering the the fabrication cost and power consumption (Di CA, et al.J. Phys. Chem. B 2007, 111, 14083(Feature Article, Front Cover), Di CA, et al. Acc. Chem. Res. 2009,42,1573). These results might boost further development of organic optoelectronic devices towards real applications.Key words: organic light-emitting diodes, organic field-effect transistors, organiclight-emitting transistors, interface, electrode modification中文摘要被称为“塑料电子学”的有机光电材料与器件因其在大面积和低成本的柔性显示、平板照明、射频标签和电子纸等方面的广阔应用前景在过去二十年中备受关注。
鳕鱼皮胶原蛋白肽铜螯合物的制备条件陈晓刚;陈忻【摘要】为提高鳕鱼皮的附加值,采用正交试验法探讨鳕鱼皮胶原蛋白肽与硫酸铜螯合反应条件,制备鳕鱼皮胶原蛋白肽铜。
结果表明:制备鳕鱼皮胶原蛋白肽螯合铜的最佳条件是胶原蛋白肽与硫酸铜的质量比为3.5∶1,pH 7.0,反应温度50℃,反应时间40 min,该条件下铜离子的螯合率为34.35%。
%The preparation conditions of copper chelate from collagen peptide of cod skin were optimized by the orthogonal design to improve addition value of cod skin.The copper chelation rate from collagen peptide of cod skin under the optimum preparation conditions of 3.5:1 of collagenpeptide/copper sulfate ratio,pH 7.0,50℃ and for 40 min can re ach 34.35%.【期刊名称】《贵州农业科学》【年(卷),期】2015(000)001【总页数】5页(P154-158)【关键词】鳕鱼皮;胶原蛋白肽;铜螯合物;制备条件【作者】陈晓刚;陈忻【作者单位】佛山科学技术学院理学院化学与化工系,广东佛山 528000;佛山科学技术学院理学院化学与化工系,广东佛山 528000【正文语种】中文【中图分类】S986.5;TS254铜是动物体所必需的微量元素之一,在动物体内参与血红蛋白的合成和某些氧化酶的合成与激活。
铜的缺乏会影响动物对铁的利用,从而产生贫血[1]。
铜是饲养动物必需的微量元素,有重要的营养生理功能,同时对动物的免疫系统及抗氧化应激也有强烈影响。
4,4'-联吡啶铜(Ⅱ)配合物的合成及其晶体结构覃妍;肖瑜;黄浦;朱芸;易茗【摘要】采用溶液法合成了一维链状4,4'-联吡啶铜配合物{[Cu2(OOCCH3)4(4,4-bpy)]·(CHaCN)}n(4,4-bpy=4,4'-联吡啶),经单晶X射线衍射测定其晶体结构.此晶体属单斜晶系,空间群C2/c.晶胞参数:a=2.311 67(5)nm,b =1.40023(2)nm,c=1.531 03(4)nm,β=108.205(2)°,V=4.707 69(17)nm3,F(000) =2 288,Z=8,D.=1.582 g/em3,μ=1.850mm-1,R1=0.033 6,ωoR2=0.093 5.晶体结构分析表明,配合物中心Cu2形成了变形的几何四方锥CuNO4构型,Cu2通过4个乙酸根桥连形成双核单元,双核单元再通过4,4'-联吡啶N原子桥联成一维链状,经分子间范德华力作用构造出了三维超分子网.%The title complex was synthesized in the reaction by 4,4'-bipyridine and cupric acetate in acetonitrile DMF solution.The crystal structure was determined by single crystal X-ray diffraction.The crystal structure of the title complex belongs to the monoclinic system with space group C2/c and cell parameters:a=2.311 67 (5) nm,b=1.40023(2) nm,c=1.531 03(4)nm,β=108.205(2)°,V=4.707 69(17) nm3,F(000)=2 288,Z =8,Dc =1.582g/cm3,μ =1.850 mm-1,R1 =0.033 6,ωR2 =0.093 5.The Cu(Ⅱ) was coordinated by four oxygen atoms from OOCCH3 groups and one nitrogen atom from 4,4'-bipyridine,and formed a distorted square pyramidal geometrical configuration.The complex formed a dimer through OOCCH3 bridges which constructed a one dimensional chain.The 1D chain further formed 3D network through the van der Waals force.【期刊名称】《桂林理工大学学报》【年(卷),期】2016(036)004【总页数】5页(P799-803)【关键词】4,4'-联吡啶;铜配合物;晶体结构【作者】覃妍;肖瑜;黄浦;朱芸;易茗【作者单位】桂林理工大学广西岩溶地区水污染控制与用水安全保障协同创新中心,广西桂林541004;桂林理工大学广西岩溶地区水污染控制与用水安全保障协同创新中心,广西桂林541004;桂林理工大学广西岩溶地区水污染控制与用水安全保障协同创新中心,广西桂林541004;桂林理工大学广西岩溶地区水污染控制与用水安全保障协同创新中心,广西桂林541004;桂林理工大学广西岩溶地区水污染控制与用水安全保障协同创新中心,广西桂林541004【正文语种】中文【中图分类】O614.12配位聚合物通常是指金属离子和小分子配体通过自组装形成的、具有高度规整的无限网络结构的配合物[1]。
以小分子型诱导剂液相还原制备铜纳米片张晓杰;方斌;袁双龙【摘要】在次亚磷酸钠-硫酸铜溶液的反应体系中加入小分子型诱导剂,制备了高径厚比的铜纳米片,并将其分散于丙烯酸/环氧复合树脂中制成导电胶.通过X射线衍射(XRD)、扫描电子显微镜(SEM)表征铜纳米片的结构与形貌,采用电阻测试仪测定导电胶的导电性能,研究了诱导剂种类及浓度、反应体系的pH值对铜纳米片形貌的影响,并分析了铜纳米片的形成过程.结果表明:诱导剂胸腺嘧啶的加入及合适的pH是制备铜纳米片的关键;胸腺嘧啶的浓度及pH过低或过高时,均会导致产物中片状铜粉比例减少,颗粒状铜粉比例增加.获得高质量的铜纳米片的最佳条件为:胸腺嘧啶的浓度1.5 mmol/L,pH 1.5,反应时间2h.此条件下所得的铜纳米片表面平整,厚度为50~100 nm,直径约为15 μm,以此铜纳米片制得的导电胶比球磨法片状铜粉制成的导电胶有着更好的导电性.【期刊名称】《北京化工大学学报(自然科学版)》【年(卷),期】2018(045)004【总页数】6页(P41-46)【关键词】铜纳米片;胸腺嘧啶;导电性【作者】张晓杰;方斌;袁双龙【作者单位】华东理工大学材料科学与工程学院,上海200237;华东理工大学材料科学与工程学院,上海200237;华东理工大学材料科学与工程学院,上海200237【正文语种】中文【中图分类】TB383引言导电银浆、导电银胶在电子行业中应用广泛[1],其组分中最重要的成分是银粉,尤其是片状银粉。
使用价格低廉的铜粉代替银粉一直是工业上追求的目标,但是由于铜粉极易氧化,导致这种替代很难实现。
随着应用技术的发展,使用铜来代替银的可能性开始增加。
而片状铜粉作为导电填料,一般要求其具有厚度薄、直径大、分散性好等特点。
目前,工业上制备片状铜粉的方法是机械球磨法[2],所制备出的铜粉厚度在0.02~2 μm,粒径在0.2~50 μm,径厚比(直径与厚度比值)小于等于20,且在球磨粉碎过程中由于硬球对金属粉末的多次撞击、研磨和压合,会不可避免地出现团聚和尺寸分布宽等缺陷[3]。
酞菁铜相对原子质量引言酞菁铜(CuPc)是一种有机金属配合物,它具有广泛的应用领域,包括化学传感器、有机光电器件和催化剂等。
相对原子质量是描述元素质量的重要指标之一,对于研究酞菁铜的性质和应用具有重要意义。
本文将探讨酞菁铜的相对原子质量及其相关内容。
酞菁铜的化学式和结构酞菁铜的化学式为CuPc,它是由铜原子与四个酞菁分子形成的二维平面结构。
酞菁分子是由四个吡咯烷基团环形排列而成,中间的铜原子与这四个酞菁分子的氮原子形成配位键。
相对原子质量的定义相对原子质量是指一个元素原子质量与碳-12同位素相对质量之比。
根据国际纯粹与应用化学联合会(IUPAC)的规定,相对原子质量是以碳-12同位素为标准的。
碳-12被定义为原子质量单位的基准,其相对原子质量被定义为12。
其他元素的相对原子质量则是相对于碳-12的比值。
酞菁铜的相对原子质量计算要计算酞菁铜的相对原子质量,首先需要知道其中铜和碳、氢、氮等元素的相对原子质量。
根据国际纯粹与应用化学联合会的数据,铜的相对原子质量为63.55,碳的相对原子质量为12.01,氢的相对原子质量为1.008,氮的相对原子质量为14.01。
计算酞菁铜的相对原子质量时,需要考虑其中每个元素的原子数目。
根据酞菁铜的化学式CuPc,其中包含一个铜原子和16个碳原子、4个氮原子、8个氢原子。
根据相对原子质量的定义,酞菁铜的相对原子质量可通过如下公式计算:相对原子质量 = (铜的相对原子质量× 铜的原子数目 + 碳的相对原子质量×碳的原子数目 + 氮的相对原子质量× 氮的原子数目 + 氢的相对原子质量× 氢的原子数目) / 总原子数目代入相关数值可得:相对原子质量= (63.55 × 1 + 12.01 × 16 +14.01 × 4 + 1.008 × 8) / 29 = 430.628因此,酞菁铜的相对原子质量约为430.628。
Circuit Simulation for the Dielectric Responses of the Composites of Copper Phthalocyanine Oligomers and Sulfonated Polyurethanes by Separating the Structural ElementsJUAN ZHANG,1DAN ZHU,1,2MASARU MATSUO 11Graduate School of Humanities and Sciences,Faculty of Human Life and Environment,Nara Women’s University,Nara 630-8263,Japan2Jiangsu Key Laboratory of Biofunctional Materials,College of Chemistry and Environment Science,Nanjing Normal University,Nanjing 210097,People’s Republic of ChinaReceived 14January 2009;revised 3March 2009;accepted 29March 2009DOI:10.1002/polb.21720Published online in Wiley InterScience ().ABSTRACT:The copper phthalocyanine (CuPc)oligomer with high dielectric constantwas synthesized by the solution method.The FT-IR and X-ray diffraction results revealed its chemical structure.The high dielectric constant of CuPc was proved to result from the free movement of charge carriers along the conjugated orbitals.The com-posites of CuPc and sulfonated polyurethane (PUI)were prepared and the contents of CuPc in the composites were varied from 10to 50wt %.The dielectric performance was greatly enhanced for the composite compared with that of average polymers.Different from the behaviors appeared in a common composite with conductive fillers,there is no percolation phenomenon observed in the CuPc/PUI composite,and the dielectric con-stants of CuPc/PUI composites decreased with the increase in the CuPc content,which is assumed to due to the strong electrostatic interactions between CuPc and PUI.Con-sidering the many-body interactions within the bulk sample and the contact effect between the bulk sample and the metallic electrode,an equivalent circuit was estab-lished to simulate the dielectric behaviors of the composites and computational curve fit-ting was done.The results were in good agreement,indicating that the dielectric responses of the composites come from both the extrinsic and the intrinsic contributions.The extrinsic was associated with the Maxwell-Wagner relaxation at the interface between the electrode and the bulk sample,and the intrinsic was associated with the huge dipoles provided by the mobile charges within the CuPc grains and the interaction among them in the bulk composites.A circuit model concerning the universal dielectric response was proposed in describing the intrinsic contribution,which quantitatively verified the strong interaction among the dipoles with the relaxation time,representingthe aggregated structure of CuPc when its content was high in the composites.VC 2009Wiley Periodicals,Inc.J Polym Sci Part B:Polym Phys 47:1146–1155,2009Keywords:composites;dielectric properties;equivalent circuit;phthalocyanines;simulationsINTRODUCTIONElectroactive polymers (EAPs)are of great inter-est for a wide range of exciting applications,suchas electromechanical and dielectric devices,Journal of Polymer Science:Part B:Polymer Physics,Vol.47,1146–1155(2009)VC 2009Wiley Periodicals,Inc.Correspondence to:D.Zhu (E-mail:zhudan1013@)or M.Matsuo (E-mail:m-matsuo@cc.nara-wu.ac.jp)1146because of their many attractive features,such as light weight,high mechanicalflexibility,and con-formability.1–4To satisfy the requirement for a high-performance electro-mechanical material,a high-dielectric constant is demanded to generate a high elastic energy under low appliedfield.5,6There are two major categories of EAPs depending on their mode of activation mecha-nism,that is,electronic and ionic categories,met-allophthalocyanines are assigned to the latter. Electricfield or Coulomb forces generally drive electronic EAPs,whereas the primary driver for ionic EAPs is the mobility or diffusion of ions. Since the discovery of their semiconductivity in 1948,7metallophthalocyanines have become one of the most interesting classes of organic semicon-ductors,because they are planar,highly aromatic, symmetrical,and thermally stable compounds.8 Metallophthalocyanine polymers can be synthe-sized through metal–metal bonding or covalent bonding between the phthalocyanine rings and the extent of conjugation and delocalization can be enhanced by polymerization,leading to their unusual electrical properties,which have attracted considerable attention in recent years.9 Copper-phthalocyanine(CuPc),which has a high dielectric constant at room temperature due to the nomadic polarization mechanism(delocalized electrons lead to the space charge phenomenon),10 is a promising material for dielectric application. Nevertheless,they are brittle and difficult to pro-cess,11leading to an appeal to an appropriate polymer matrix which is easy to obtain and be processed to prepare a composite with high dielec-tric constant.In2000,an organic polymeric composite based on CuPc oligomers and poly(vinylideneflu-oride-trifluoroethylene)[P(VDF-TrFE)]copolymer, which obtained huge dielectric constant,was found by H.Xu et al.12Whereas,in their research, the CuPc content has reached as high as55%for a composite with satisfactory dielectric properties. Hence,we dedicate tofind a better polymer ma-trix to fabricate a composite with high dielectric constant and low dielectric percolation threshold. The excellent dispersive condition of the CuPc is desired,and the ionized polyurethane(PUI), which is a material with polar group and possibly obtaining dipolar interactions and good miscibility with CuPc,provides the idea on solving this prob-lem.PUI molecules obtain high polarity and intrinsic dielectric constant than other polymers, which may be expected that the CuPc with car-boxylic acid functional groups will be easier and more complete to disperse in a matrix of PUI, obtaining a satisfactory polymer composite in physical properties.Therefore,the polymer com-posites of CuPc and PUI have been prepared and their dielectric properties have been characterized and analyzed from the view of micro-structures.The investigation on the dielectric properties provides a potential tool to illuminate the rela-tionship between the micro-structure and the macroscopic physical properties in a heteroge-neous system.The particular chemical structures of variousfillers can provide their different in-trinsic dielectric constant and affect their disper-sion in a polymer matrix,resulting in the differ-ent dielectric behaviors for the composites based on the same matrix and the differentfillers.Fur-thermore,the dielectric behaviors are strongly affected by the charge distribution and by the sta-tistical thermal motions of its polar groups.Espe-cially the study of relaxation process constitutes a powerful approach for obtaining information about the nature and types of molecular motions and the dispersion mode offillers that are affected by chemical compositions,molecular structure, morphology,etc.13In addition,the establishment of equivalent circuit,as well as the application of mathematical simulation,will reasonably and precisely elucidate the mechanism and origin of the dielectric behaviors of the heterogeneous composites.In our experiment,the CuPc oligomers were synthesized by the solution method and charac-terized by structural analysis to verify their highly planar-conjugated structure,which can provide a large delocalized orbital for electron delocalization,thus leading to a huge intrinsic dielectric constant.CuPc is selected as reinforce-mentfillers to fabricate its composites with PUI matrix.Though they obtain the polarization mechanism as other conjugated polymers,such as polyaniline and polyacene quinone radical poly-mers,they show the unique dielectric reinforce-ment effect and the mechanism on their compo-sites.The interfacial status in the CuPc/PUI com-posites is investigated,and the relationship between the microscopic hetero-structures and the physical properties is studied.An equivalent circuit has been established to explore the origin and the character of the dielectric behaviors of the composites.Thefitting results,which are in good agreement with the experimental data, reveal that there are two contributions to the dielectric properties,the intrinsic contribution based on the bulk sample and the extrinsicDIELECTRIC BEHAVIORS OF COPPER PHTHALOCYANINE OLIGOMERS1147Journal of Polymer Science:Part B:Polymer PhysicsDOI10.1002/polbcontribution from the contact effect between thesample and the electrode.EXPERIMENTALMaterialsPyromellitic dianhydride(PMA)was purchasedfrom Shanghai Chemical Reagent Co.,Pellethane50,a condensate of methylene diphenyl-diisocya-nate(MDI),poly(tetramethyl glycol)(PTMO,MW ¼1000),and1,4-butanediol(BD)with a molar ra-tio3.3/2.3/1.0,was purchased from Dow Chemi-cals.Sodium hydride and1,3-propane sultone(97%)were from Aldrich Chemical Company,theother reagents were commercial chemicals. SynthesisSynthesis of Copper-Phthalocyanine OligomerThe CuPc oligomer was synthesized by the solu-tion method.11Copper sulfate pentahydrate,PMA,urea,ammonium chloride and ammoniummolybdate calculated according to an appropriatemolar ratio were ground together and then placedin a three-neckedflask equipped with thermome-ter,condenser,and mechanical stirrer.Nitroben-zene was used as solvent,and the temperature of reaction solution was increased slowly from the room temperature and then maintained at180–185 C for12h.The as-synthesized solid materi-als wasfinely ground and washed with methanol to remove nitrobenzene completely.The powder was boiled in2M hydrochloric acid saturated with sodium chloride for several minutes andfiltered after cooling to room temperature.The product was neutralized by2M sodium hydroxide solution containing sodium chloride at90 C until the am-monia was completely gotten rid of.The precipi-tate was solved in2M hydrochloric acid and then centrifugated.After centrifugation,the product was dried at room temperature under vacuum. The synthesis route of CuPc oligomer is displayed in Scheme1.Synthesis of PUIThe synthesis route of PUI displays in Scheme2. Reaction was performed in a three-neckedflask equipped with condenser,drying tube,thermome-ter,magnetic stirrer,and nitrogen inlet.Theflask wasflamed outside while swept by nitrogenforScheme2.The synthesis route of the sulfonated PUI.1148ZHANG,ZHU,AND MATSUOJournal of Polymer Science:Part B:Polymer PhysicsDOI10.1002/polbanhydrous circumstance.Pellethane was dis-solved in anhydrous N,N-dimethyl-formamide (DMF),and then cooled to aboutÀ5 C with a salt-ice bath.Calculated amount of sodium hydride was added intoflask with vigorous stir-ring and reacted for1h until all of the sodium hydride had been consumed to obtain a greenish-yellow solution.Previously calculated propane sultone was added to the metallated polyurethane reaction mixture and continued to react at about 0 C for0.5h.The ice-salt bath was removed,and stirring was continued for another0.5h at room temperature,and then at50–60 C for another 1h.Followed by addition of toluene and removal of the excessive solvent,the reaction mixture was precipitated.Then the precipitates were washed by water and dried in vacuum for48h to obtain thefinal product.Preparation of CuPc/PUI Composite FilmsThe compositefilms of CuPc/PUI were prepared by solution casting.The solution of PUI in DMF was prepared,and the CuPc particles were dis-persed in the prepared PUI solution under ultra-sonic treating for2h.The compositefilms were obtained by a solution-casting method and dried in air at60 C for12h,followed by vacuum dry-ing at60 C for24h to completely evaporate the remnant solvent.The thicknesses of all thefilms were about100–200l m.CharacterizationAll samples were completely dried in a vacuum desiccant for24h at room temperature to get rid of the residual solvent before testing.The FT-IR spectrum was taken by the Fourier transform infrared spectrophotometer of Bruker Vector-22 FT-IR with the standard laser spectrum of 632.8nm.Samples were ground,mixed with po-tassium bromide,and compressed to pellets for testing.X-ray measurements were performed by a 12-kW rotating-anode X-ray generator(Shimadzu XD-3AX)with a point focusing,and the mono-chromatic Cu K a radiation(wavelength of0.1542 nm)was used.Samples tested were in powder form for CuPc,as well as in thefilm forms for PUI and the composites.Corrections of X-ray diffrac-tion intensity were made for air scattering,back-ground noise,polarization and absorption.The measurement for the content of the carbox-ylic radicals in CuPc was performed by the poten-tiometrictitration and back titration.The content of the copper in CuPc was measured by induc-tively coupled plasma atomic emission spectrome-try(ICP Jarrell-Ash J-A1100),the potassium salts solution of CuPc was prepared for testing.The dielectric spectra were recorded by the Im-pedance Analyzer(HP4194A/RT)from Agilent Co. Before the measurements,the samples were hot-pressed under80 C for10min,and then vacuum evaporated with Au electrode by an Ion Coater, Hitachi Eiko IB-3with the coating area of 4.9mm2.The measuring voltage was0.5V, and the frequency was in the range from100Hz to10MHz.RESULTS AND DISCUSSIONThe FT-IR spectrum of CuPc oligomer is shown in Figure1.The broad absorption band from3500to 3000cmÀ1is assigned to the O A H stretching vibration in carboxylic acid,then combining the strong C A O stretching vibration around 1710cmÀ1,the existence of carboxylic acid func-tional groups can be verified.A mild absorption band observed around920cmÀ1can be attributed to the metal-ligand vibration resulting from bond-ing between the copper atom and the nitrogen atoms in the four surrounding isoindole rings,14,15 which is the most important characteristic of met-allophthalocyanines.Another absorption band around810cmÀ1is also assigned to the metal-ligand vibration.16–18In addition,the absorption bands observed around1628,1580,1508,1456, and1096cmÀ1are assigned to phthalocyanine skeletal vibration,namely,the C A C or C A N stretching deformation in the large conjugated plane of CuPc.The absorption bands observed around1135and731cmÀ1correspond to the C A H in-plane bending deformation and the C A H out-of-plane bending deformation of the periph-eral benzene rings of CuPcmolecule, Figure1.The FT-IR spectrum of CuPc oligomer.DIELECTRIC BEHAVIORS OF COPPER PHTHALOCYANINE OLIGOMERS1149Journal of Polymer Science:Part B:Polymer PhysicsDOI10.1002/polbrespectively .19,20The results are coincident with the established values reported.21–24The content of carboxylic acid functional groups in CuPc obtained from the back titration is 24.48wt %,a little lower than the value of 25.40wt %from the theoretical calculation in which CuPc oligomer is regarded as a homopoly-mer of tetramers.Actually ,it is impossible to obtain the tetramers only from the synthetic pro-cess,and the dimers,trimers even multimers are also possibly synthesized at the same ly,the CuPc tetramer oligomer obtained is mixed with a small amount of various unimers of other degree of polymerization,resulting in the deviation from the theoretical value.Although the experimental result is very close to the theoretical value,it indicates that the CuPc oligomers obtained are mostly the tetramers.Moreover,the condensation reaction between few carboxylic acid groups possibly occurs,leading to a decrease of the content of the carboxylic acid functional groups.In contrast,the result of element analysis dem-onstrates that the copper content in CuPc oligomer is 6.08%,which is 81.94%of the theoreti-cal value of 7.42%.The deviation of the copper content from the theoretical value may be due to the partial demetallization of the copper from the phthalocyanine rings during the synthetic plex formation takes place between cop-per and chloride ions during HCl-washing and the copper salt is separated out leaving behind the metal-free phthalocyanine macrocyclic struc-ture,10,14resulting in the decrease of the copper content in CuPc.The dielectric constant of CuPcoligomer is significantly affected by its copper con-tent,the dielectric constant will decrease dramati-cally after treatment by HCl.10Figure 2shows the wide-angle X-ray diffraction intensity curves taken for CuPc oligomer.Based on the Bragg formula,for CuPc,the interplanar spacings corresponding to the diffraction peaks situated around 2h ¼9.1,10.3,26.9,and 28.3oare given as 9.72,8.59,3.31,and 3.15A˚,respec-tively ,which verify the crystalline structures of CuPc.25–28The strong reflection from the crystalplane with lattice space of 3.31A˚in distance,is a typical peak observed from the planar structures of carbon or graphite,29,30implying that CuPc obtains the highly conjugated structure based on the stacking of the graphite-like planes.In addi-tion,the strong diffraction peak around 28.3 is assigned to the second-order reflection (004),due to the existence of copper atom which can make the extra contribution to the scattering.31The results from X-ray indicate that Cu atoms and the four surrounding isoindole nitrogen atoms must all lie strictly in one plane,and Cu atoms are bound by covalent bond to the four isoindole nitro-gen atoms.31The whole CuPc molecule obtains the extended conjugated structure in a plane,which can provide huge p -associated orbital for electron delocalization.The existence of copper allows a further increase of the delocalization due to the bridge bonding.Thus a large polarization occurs,providing a high dielectric constant to the intrinsic CuPc.The frequency dependence of bulk dielectric constant and loss tangent of CuPc oligomers at room temperature are shown in Figure 3.The dielectric constant of CuPc can reach 7Â105at the frequency of 100Hz,and gradually dropstoFigure 3.The frequency dependence of the dielec-tric behavior of CuPc oligomer.1150ZHANG,ZHU,AND MATSUOJournal of Polymer Science:Part B:Polymer PhysicsDOI 10.1002/polb200at107Hz.The strong dielectric dispersion at low frequency is characteristic for a charge carrier system.The high dielectric constant in CuPc is due to a kind of colossal polarization,termed as ‘‘nomadic polarization’’by Pohl.32–34In a molecu-lar view,there are large amounts of charge car-riers in CuPc created intrinsically by naturally dissociation of the conjugated polymers.These mobile charges would move freely along extended regions provided by the associated p-orbital with near-zero resistance,and are ultimately limited by a boundary.Those conjugated planar or stacked‘‘huge molecular orbital(MO)poly-mers.’’32will form a collection of highly polarized polarons,35thereby exhibit high bulk permittivity under the external electricfield.In CuPc or its composite in this article,the most contributions to the dielectric constant at the low frequencies are those huge polarons,that is,the grains of CuPc.For CuPc,there are two reasons to cause the dielectric losses at the frequencies in our mea-surement range.One is the conduction loss from the movement of charges along the huge delocal-ized conjugated orbitals,which consumes the elec-trical energy.The other is the relaxation loss pro-duced under the process of polarization because of the hindrance to the movements of the polarons, including atoms,groups,and the whole molecules, resulting in the energy consumption in overcom-ing the internal viscous resistance during the ori-entation of the polarons.Both the dielectric constant and loss tangent of CuPc decrease with the increasing frequency, which is attributed to the fact that the polarons with large dipole moments provides an increase in the dielectric constant for CuPc.Meanwhile,it also provides an increase in the dielectric loss tan-gent due to the enhanced electronic conductance and the enhanced hindrance from the interaction between the polarons.Because both the nomadic polarization and the displacement of the electrons are proportional to the size of the polarons or the delocalized regions,the dielectric loss tangent increases with the increase of the dielectric con-stant,as shown in Figure3.On the basis of the above structural discussion, CuPc oligomers have high bulk dielectric constant and their polarization mechanism is the same as that of other conjugated organic semiconductors. Hence,to explore the dielectric reinforcement effect and mechanism of the PUI composites with CuPc,we fabricated the CuPc/PUI composites in which CuPc was used asfillers and thefiller con-tents varying from10to50%.The change of the dielectric constants of CuPc/PUI composites ver-sus the CuPc content is shown in Figure4.As observed from Figure4,the dielectric con-stants of CuPc/PUI composites decrease with increasing CuPc contents.It lies in the fact that CuPc obtains a lot of carboxylic groups,which can form a strong electrostatic force with the ionic groups in PUI,thus improving the dispersion of CuPc in PUI,so that the dielectric constant of the composite is high even in low content of CuPc. The lower the CuPc content is,the better disper-sion of CuPc in PUI is.With CuPc content increasing,the CuPc particles get close to each other and aggregate,which result in the enhance-ment of the interaction among the charges in the neighboring grains of CuPc.It is the long-range free moving of those charges that provide the huge permittivity of the bulk composite,so with the aggregation of CuPc and with the retarding of the charge mobility,the dielectric constants decrease.The aggregation of CuPc can be observed from X-ray diffraction spectra as shown in Figure5.PUI displays an amorphous phase and there is no detectable crystalline phase in PUI matrix due to the mergence of the hard segment and soft segment of polyurethane after ionization.While for CuPc/PUI composite with 25wt%CuPc content,there exists a diffraction peak around2h%27 which is due to CuPc crys-tal,indicating that CuPc has formed obvious aggregates when its content is25wt%.Figure6shows the frequency dependence of the dielectric behaviors for CuPc/PUI composites with various weight ratios of CuPc.A step-like increase in the dielectric constant towardlowerfrequencies is accompanied by a corresponding loss peak.Such Debye-like dipolar relaxation is mainly accounted for a large dielectric response at low frequency and the behavior can be explained by the contact effect.36It is of common sense that if the electron work function in a metal is different with that in a semiconductor,a thin layer which is made of mo-bile electron carriers will appear in the semicon-ductor close to the junction.This depletion layer acts as a high capacitance in parallel with a large resistor,connected in series to the bulk sample.For CuPc/PUI composite with 10wt %CuPc con-tent,the composites are semiconductive and the depletion regions may be formed at the interface between the composites and the metallic electro-des,leading to Maxwell-Wagner-type relaxations and giant dielectric constant at low frequency.In addition,as discussed above,CuPc particles get close to each other and aggregate with increasing the CuPc content,leading to the decrease of the concentration of space charges on the interface between the bulk sample and the electrodes.Meanwhile,the aggregation of CuPc particles makes it difficult for the huge dipoles formed or orientated to follow the change of the applied field,because of the enhanced hindrance to the orientation of the dipoles from the neighboring circumstance,that is,the interaction among the charges within the neighboring grains of CuPc.Therefore,with the CuPc content increasing,the relaxation peaks move towards low frequencies and the intensities of relaxation decrease.Besides the extrinsic contribution from the con-tact effect,the intrinsic dielectric response attrib-uted to the bulk sample also contributes to the total dielectric behaviors.Considering the many-body interactions within the huge dipoles of the CuPc grains,the intrinsic dielectric response is addressed by the sum of DC conductivity ,fre-quency dependent AC conductivity and the infi-nite dielectric constant e 1at high frequency.According to the theory of the universal dielectric response by Jonscher,37the intrinsic contribution of the bulk sample can be described by:e 0intrinsic ¼tan n p 2 r0e 0x n À1þe 1(1)where x ¼2p f is angular frequency,r 0x n is the universal dielectric response (UDR)used for fre-quency dependence AC conductivity ,e 0is vaccum permittivity,and n is an exponential factor with the value between 0and 1.Considering the extrinsic contribution from the contact region,which is Debye-likerelaxation,Figure 6.The frequency dependence of (a)the dielectric constant and (b)loss tangent for CuPc/PUI composites with different weightratios.Figure 5.The X-ray diffraction spectra of PUI and CuPc/PUI composite with 25wt %CuPc content.1152ZHANG,ZHU,AND MATSUOJournal of Polymer Science:Part B:Polymer PhysicsDOI 10.1002/polbthe totally dielectric response can be exhibited as follows 36,38:e 0¼tan n p 2 r 0e 0x n À1þe 1þe c Àe 11þx 2s 2(2)The first and second terms on the right hand sideof the equation represent the response of the bulk sample at low and high frequency,and the last term represents the contribution of contact region.e c is the dielectric constant of contact region and s is the relaxation time which is single without distribution.The equivalent circuit and the fitting results are shown in Figure 7,the solid curve well fits the experiment data by eq 2and the dot line demon-strates the intrinsic response of the bulk sample.The values of the corresponding parameters obtained from the fit are listed in Table 1.The relax-ation time s is a parameter describing how fast a micro-system will get to new equilibrium with the change of the external circumstance.In most occa-sions,s represents the extent that the dipole is impeded in the orientation,or the extent that the charges are constrained in movement,that is,the interaction of nearby circumstance to the dipole.With increasing the CuPc content,the aggregation of CuPc makes the grains get close to each other,it makes the formation of the huge dipole more and more difficult in keeping up with the change of the applied field as for the enhanced interactions from the nearby charges in the neighboring dipoles,lead-ing to the increase in the relaxationtime.CONCLUSIONSThe CuPc oligomer with high bulk dielectric con-stant was synthesized by the solution method. The FT-IR and X-ray diffraction spectra were measured to characterize the chemical structure of CuPc,and it demonstrated that the origin of the high dielectric constant as well as its polariza-tion mechanism was the free movement of charge carriers along the conjugated orbitals.The CuPc/ PUI composites were prepared with CuPc con-tents varied from10to50%,demonstrating a characteristic reinforcement on the dielectric properties of the polymer.Different from the obvious percolation behavior observed for the composites of other condcutivefillers,the dielec-tric constants of CuPc/PUI composites decreased with the increase of the CuPc content,due to the fact that the strong electrostatic interactions between the carboxylic groups in CuPc and the ionic groups in PUI improves the dispersion of CuPc in the low content of CuPc,whereas the aggregation of CuPc at high content results in the decrease of the dielectric constant.Considering the many-body interactions within the bulk sample,as well as the contact effect between the bulk sample and the metallic elec-trode,an equivalent circuit was established to simulate the dielectric behaviors of the compo-sites.Thefitting results were in good agreement with the experimental data and indicated that the dielectric responses of the composites did come from two contributions.One was the extrinsic associated with the Maxwell-Wagner-type relaxa-tion at the interface between the electrode and the bulk sample,and the other,the intrinsic one was from the highly polarized CuPc grains that acted as huge dipoles in the composite.In describ-ing the intrinsic contribution,we used a model containing a universal dielectric response,repre-senting the unique aggregated structure of CuPc in the composites.It was verified by the relaxa-tion time that the interactions among CuPc dipoles increase with the increasing contents of CuPc.REFERENCES AND NOTES1.Zhang,Q.M.;Li,H.F.;Poh,M.;Xia,F.;Cheng,Z.Y.;Xu,H.S.;Huang, C.Nature2002,419, 284–287.2.Bar-Cohen,Y.J Spacer Rockets2002,39,822–827.3.Herbert,J.M.Ferroelectric Transducers and Sen-sors;Gordon and Breach Science Publishers:New York,1982.4.Dias,C.J.;Das-Gupta,D.K.IEEE Trans DielectrElectr Insul1996,5,706–734.5.Zhang,Q.M.;Bharti,V.;Zhao,X.Science1998,280,2101–2104.6.Bai,Y.;Cheng,Z.Y.;Bharti,V.;Xu,H.;Zhang,Q.M.Appl Phys Lett2000,76,3804–3806.7.Eley,D.D.Nature1948,162,8198.Moser,F.A.;Thomas,A.L.Phthalocyanine Com-pounds;Reinhold Publishing Corp.:New York, 1963.9.Meier,H.;Albrecht,W.;Zimmerhackl, E.PolymBull1985,13,43–50.10.Nalwa,H.S.;Dalton,L.R.;Vasudevan,P.EurPolym J1985,21,943–947.11.Achar, B.N.;Fohlem,G.M.;Parker,J. A.JPolym Sci Part A:Polym Chem1982,20,1785–1790.12.Xu,H.S.;Bai,Y.;Bharti,V.;Cheng,Z.Y.J ApplPolym Sci2001,82,70–75.13.Rellick,G.S.;Runt,J.J Polym Sci Part B:PolymPhys1986,24,279–302.14.Nalwa,H.S.;Vasudevan,P.J Mater Sci Lett1983,2,77–79.15.Kobayashi,T.;Kurokawa,F.;Uyeda,N.;Suito,E.Spectrochim Acta A Mol Biomol Spectrosc1970, 26,1305–1311.16.Janczak,J.Pol J Chem1998,72,1871–1878.Table1.The Corresponding Parameters from the Simulation ResultsCuPcContent(wt%)n r0(S/m)e1e c s(s)100.3738 2.958Â10À613 2.587Â1047Â10À5200.3609 2.879Â10À615 2.251Â1049Â10À5300.3321 2.504Â10À617 2.009Â104 3.5Â10À4400.3306 2.010Â10À618 1.905Â104 4.1Â10À4500.316 1.050Â10À624 1.785Â104 1.3Â10À31154ZHANG,ZHU,AND MATSUOJournal of Polymer Science:Part B:Polymer PhysicsDOI10.1002/polb。
高介电常数聚合物基复合材料研究进展尚继武;张以河;吕凤柱【摘要】本文概述了目前高介电聚合物基复合材料的主要问题,论述了铁电陶瓷、导电颗粒(金属粒子、石墨、碳纳米管)改性高介电复合材料的国内外研究进展;重点介绍了酞菁铜、聚苯胺改性全有机高介电复合材料,探讨了存在的主要问题,并指出提高介电常数、储能密度,减小介电损耗,降低制备成本是未来发展的方向.%The main problems in high-dielectric-constant polymer composites are reviewed. The composites of polymers with ceramics, conductive particles (metal particles, graphite and carbon nano-tubes) are summarized. The review also narrates copper phthalocyanine and polyaniline modified all--organic high-K composites. Meanwhile, problems facing the traditional high-K polymer composites are discussed. At last, the prospects of the possible developments in the future are proposed, that is to enhance the dielectric constant, energy density, and to decrease the dielectric loss and production cost.【期刊名称】《材料工程》【年(卷),期】2012(000)005【总页数】7页(P87-92,98)【关键词】高介电常数;聚合物基复合材料;储能电容器;介电损耗【作者】尚继武;张以河;吕凤柱【作者单位】中国地质大学(北京)材料科学与工程学院矿物岩石材料开发应用国家专业实验室,北京100083;中国地质大学(北京)材料科学与工程学院矿物岩石材料开发应用国家专业实验室,北京100083;中国地质大学(北京)材料科学与工程学院矿物岩石材料开发应用国家专业实验室,北京100083【正文语种】中文【中图分类】TB34;O631从第一块集成电路发明至今,以硅基集成电路为核心的微电子技术取得了飞速发展,其集成度以每年25%~30%的速率增长。
氨基功能化介孔二氧化硅的一步合成及吸附性能研究侯清麟;李露【摘要】用一步合成法合成了一种具有较大孔径的介孔二氧化硅材料;通过透射电镜对样品的结构和性能进行分析;分析比较了氨基化二氧化硅和普通二氧化硅对铜离子的吸附性能.实验结果表明:介孔二氧化硅的粒径为100 nm左右,介孔在10 nm左右,介孔排列有序且规整;介孔材料对铜离子的吸附率比普通纳米二氧化硅高出一倍多.【期刊名称】《湖南工业大学学报》【年(卷),期】2012(026)006【总页数】4页(P1-3,12)【关键词】介孔二氧化硅;吸附性能;重金属【作者】侯清麟;李露【作者单位】湖南工业大学包装与材料工程学院,湖南株洲412007;湖南工业大学包装与材料工程学院,湖南株洲412007【正文语种】中文【中图分类】O6470 引言随着城市化进程的不断加快和工业化水平的迅速提高,大量的有害金属及其化合物随工业和生活废弃物被排放到大气和水体中,直接威胁着生态环境及人类健康。
目前研制高效重金属离子吸附剂是人们孜孜以求的目标[1]。
介孔材料因其有比表面积大、孔隙率大、机械稳定性强以及应用性能可随结构控制而呈现连续调变的特点,使其在分离领域具有广阔的应用前景[2]。
通过引入特定功能组分构建选择性吸附体系是介孔硅材料在重金属废水处理领域的一个重要研究方向[3-5]。
由于高度有序介孔二氧化硅具有规整的孔结构等优点,使其在大分子催化、吸附分离以及在化学组装制备先进功能材料和光学器件等方面具有较大的潜在应用价值[6-11]。
然而,现在合成氨基化硅烷的主要方法是共组装或者后处理嫁接,这2种途径均存在环节繁多的不利因素,从而制约了规模化生产,因此,寻求高效路线研制氨基化二氧化硅是实际生产应用中有待解决的问题之一。
基于前人的工作基础,本试验通过一步合成法,合成氨基功能化介孔二氧化硅,并考察其对铜离子的吸附性能。
1 试验部分1.1 试验仪器与试剂1)实验仪器:恒温数显搅拌器(DF-101S,湖南凯达科学仪器有限公司),增力电动搅拌器(D-840WZ,江苏恒丰仪器厂),真空干燥箱(DP201,重庆万达仪器有限公司),比表面和孔径分布测定仪(Micromeritics ASAP 2010),透射电子显微镜(JEOL 2010,日本JEOL公司,transmission electron microscope,TEM),等。
甲酰化酞菁铜的制备及应用研究+文献综述摘要:本研究是为企业现有产品酞菁铜(A)及偶氮化合物N-苯基-2-羟基-4-对甲酰基苯偶氮基萘甲酰胺(B)开发应用的研究项目。
A和B分别是企业生产的两种商业化产品,A是蓝色颜料,B是大红色颜料,他们不仅耐有机溶剂、耐酸碱、耐化学腐蚀等性能优异,而且耐光、耐候、耐温性也很好,已广泛被涂料、塑料、油墨等行业采用;吲哚碳菁具有摩尔消光系数大、荧光性能好、对光和热稳定性高等特点,将取代吲哚引入A和B的分子结构中,可以得到有应用前景的新型颜料。
以A为原料经过维尔斯迈尔反应,制备甲酰化酞菁铜(C);以2,3,3-三甲基取代吲哚啉为原料,与碘乙烷成盐,得到吲哚啉盐(D),再将D分别与B 和C进行缩合反应得到1-乙基-3,3-二甲基-2-(β-N-苯基-2-羟基-4-对偶氮基萘甲酰胺苯乙烯基)-3H-吲哚碘化物(E)和1-乙基-3,3-二甲基-2-(β-酞菁铜乙烯基)-3H-吲哚碘化物(F)。
重点考察了化合物C的制备及B、C与活泼亚甲基化合物吲哚啉D作用的可行性。
实验结果表明:通过维尔斯迈尔反应实现了酞菁的甲酰得到了化合物C,通过芳醛和活泼亚甲基化合物缩合反应得到了化合物E,化合物F的制备在现有条件下难以实现。
6689关键词:酞菁铜;取代酞菁;维尔斯迈尔反应;偶氮颜料;吲哚啉The preparation and application of substituted PhthalocyanineAbstract: This study is for the company’s existing copper phthalocyanine (A) and n-hydroxy-methyl phenyl azo naphthalene-carboxamide (B) development of applied research projects. A and B are produced by two commercial products, A is a blue pigment,B is a red pigment.They are not only organic solvent resistance, acid and alkali, excellent corrosion resistance and light resistance, weather resistance, temperature resistance is alsovery good, already widely used in paints, plastics, inks and other industries; Indole carbon-Ching has large molar extinction coefficient, good, light and fluorescence properties and high thermal stability, will replace the indole into the molecular structure of A and B, can get the application prospect of new paint. After Vilsmeier reaction to a raw materials, preparation of acid copper phthalocyanine(C); With trimethyl-substituted indoline as raw material, and iodide salts get indoline salts (D), D condensation reactions with the B and C are respectively 1-ethyl- -3,3-dimethyl-2-(β-n-phenyl-2-hydroxy-4-of for mamide styryl-azo naphthalene)-3H-indole iodide(E) and 1-ethyl-3,3-dimethyl -2-(β-phthalocyanine copper vinyl) -3H-indole iodide (F). Focused its investigation on compound preparation of C and B, C with active methylene compounds indoline D feasibility. Experimental results show that: Phthalocyanine through Vilsmeier reaction of Carbonyl get compound C, Through a condensation reaction of aromatic aldehyde with active methylene compounds are chemical compounds E, Compound F preparation is difficult to achieve under the existing conditions.1.2.6酞菁铜衍生物的合成71.3偶氮颜料概述101.4吲哚概述111.4.1吲哚的结构及性质111.4.2吲哚的应用111.4.3N-取代吲哚衍生物的合成路线12 1.5维尔斯迈尔反应121.6本课题研究意义及内容131.6.1研究内容131.6.2研究目的及意义152实验部分152.1仪器和试剂152.1.1实验仪器152.1.2实验试剂162.2实验172.2.1甲酰酞菁铜的制备172.2.21-乙基-2,3,3-三甲基-3H-碘代吲哚的制备182.2.31-乙基-3,3-二甲基-2-(Β-N-苯基-2-羟基-4-对偶氮基萘甲酰胺苯乙烯基)-3H-吲哚碘化物的制备182.2.41-乙基-3,3-二甲基-2-(Β-酞菁铜乙烯基)-3H-吲哚碘化物的制备192.2.5反应装置192.3产物的性能考察20 2.3.1产物结构表征202.3.2紫外可见光谱203结果与讨论213.1结果分析213.2结构分析213.2.1红外光谱分析213.2.2紫外-可见光谱分析22 4结论28致谢29参考文献301.1.2有机颜料的改性有机颜料给色能力取决于颗粒在介质中分散性的好坏,为使颜料商品具有符合要求的应用性能,添加各种类型的助剂、颜料分散剂、有机颜料衍生物与特定的添加剂等,在调整有机颜料粒径大小与分布、颜料晶型种类、改变颜料粒子表面极性过程中,起着十分重要的作用。
化学品英语名称大全一、基础化学品1. 盐酸(Hydrochloric Acid)2. 硫酸(Sulfuric Acid)3. 硝酸(Nitric Acid)4. 氢氧化钠(Sodium Hydroxide)5. 氢氧化钾(Potassium Hydroxide)6. 碳酸钠(Sodium Carbonate)7. 碳酸氢钠(Sodium Bicarbonate)8. 氯化钠(Sodium Chloride)9. 硫酸钠(Sodium Sulfate)10. 硫酸铜(Copper Sulfate)二、有机溶剂1. 甲醇(Methanol)2. 乙醇(Ethanol)3. 丙酮(Acetone)4. 异丙醇(Isopropanol)5. 正己烷(Hexane)6. 甲苯(Toluene)7. 二甲苯(Xylene)8. 乙醚(Ether)9. 四氢呋喃(Tetrahydrofuran, THF)10. 二甲基亚砜(Dimethyl Sulfoxide, DMSO)三、塑料与聚合物1. 聚乙烯(Polyethylene, PE)2. 聚丙烯(Polypropylene, PP)3. 聚氯乙烯(Polyvinyl Chloride, PVC)4. 聚苯乙烯(Polystyrene, PS)5. 聚酰胺(Polyamide, PA)6. 聚酯(Polyester)7. 聚乙烯醇(Polyvinyl Alcohol, PVA)8. 聚丙烯腈(Polyacrylonitrile, PAN)9. 聚甲基丙烯酸甲酯(Polymethyl Methacrylate, PMMA)10. 聚四氟乙烯(Polytetrafluoroethylene, PTFE)四、农药与化肥1. 敌敌畏(Dichlorvos, DDVP)2. 百草枯(Paraquat)3. 硫酸铵(Ammonium Sulfate)4. 磷酸二氢钾(Potassium Dihydrogen Phosphate)5. 尿素(Urea)6. 硝酸铵(Ammonium Nitrate)7. 氯化钾(Potassium Chloride)8. 硫酸钾(Potassium Sulfate)9. 碳酸氢铵(Ammonium Bicarbonate)10. 硫酸铜(Copper Sulfate)五、药物与生物化学品1. 阿司匹林(Aspirin)2. 青霉素(Penicillin)3. 地塞米松(Dexamethasone)4. 肾上腺素(Adrenaline)5. 葡萄糖(Glucose)6. 甘露醇(Mannitol)7. 乳酸(Lactic Acid)8. 胺基酸(Amino Acids)9. 肽类(Peptides)10. 酶(Enzymes)这份化学品英语名称大全旨在帮助化学及相关领域的工作人员、学生和爱好者更好地了解和掌握常见化学品的英文名称。
爱考机构-北大考研-化学与分子工程学院研究生导师简介-吴凯吴凯长江教授学科:物理化学研究方向:表面与材料科学电话/传真:+86-10-62754005电子信箱:kaiwu@课题组主页:/wukai/index.htm学术简历1983-1987,浙江大学,理学学士学位1987-1991,中国科学院大连化学物理研究所,理学博士学位1992-1995,大连化物所催化基础国家重点实验室,助理/副研究员1995-1998,德国马普协会Fritz-Haber研究所,访问科学家1998-2000,美国能源部太平洋西北国家实验室,博士后2000-至今,北京大学化学与分子工程学院,教授获奖情况1995年,中科院自然科学三等奖2001年,国家杰出青年基金获得者2008年,北京大学宝洁奖教金学术兼职AdvancedFunctionalMaterials顾问编委《物理化学学报》、《催化学报》、《化学学报》和《科学通报》等编委第十三届“中国化学会全国催化委员会”委员中国化学会物理化学委员会委员中国物理学会“表面与界面委员会”委员主讲课程《表面结构与表面分析》(研究生专业选修课,01年至03年)《表征技术》(全院研究生基础课,04年至07年)《表面物理化学》(研究生专业选修课,05年至今)《物理化学》(化学学院本科生必修课,08年起)研究兴趣利用表面和界面的结构、反应性和周期性来控制分子/原子簇的组装和功能材料的表面生长。
表面结构也可用于调节表面电子性质,进而调变分子的吸附和活化。
人们也可以通过设计新的表面结构来控制和调节分子的表面吸附与活化,此之谓化学反应的表面调节。
这些研究对于表面反应调节、表面配位、表面图案化与加工、能量转换等具有重要的意义。
利用功能分子的自组装在表面上产生有序图案。
这些分子通常通过范德华力、氢键、静电相互作用、偶极作用以及配位作用而聚集在一起。
经过一定的功能化处理,金属原子/离子可以被引入到各种表面分子结构中,它们的电子自旋及相互作用就可以通过这些结构的对称性、配位数和金属原子/离子间距的改变而得到调控。
标记噬菌体的方法噬菌体是一种寄生性病毒,主要靠感染细菌进行复制。
为了研究噬菌体的生物学特性以及其在生物工程和基因治疗等领域的应用,科学家们需要对噬菌体进行标记。
噬菌体的标记主要通过两种方法进行:直接标记和间接标记。
1.直接标记方法:直接标记是指将标记物直接连接到噬菌体的结构上,从而实现噬菌体的可视化。
常用的直接标记方法包括荧光标记、射线标记和酶标记等。
1.1荧光标记:荧光标记是一种常见的直接标记方法,可以通过将荧光染料与噬菌体结合,使噬菌体发出特定的荧光信号。
常用的荧光染料包括荧光素(Fluorescein)、罗丹明(Rhodamine)、硫苏丁(Sulforhodamine)、青铜绿(Copper phthalocyanine)等。
荧光标记的优点是可视化效果明显,灵敏度高,能够在活体中实时监测噬菌体的分布和动态变化。
同时,荧光标记还可以与光学成像技术相结合,如荧光显微镜、流式细胞仪等,进一步提高标记效果和研究噬菌体的能力。
1.2射线标记:射线标记是一种将放射性同位素与噬菌体结合的方法。
通过射线标记,可以追踪噬菌体在体内的运动和分布情况。
常用的射线标记同位素包括磷-32(32P)、硫-35(35S)、氘-2(2H)等。
射线标记的优点是灵敏度高,可以进行定量分析;缺点是有一定的辐射风险,需要具备特殊的操作条件和设备。
1.3酶标记:酶标记方法是将酶与噬菌体结合,使噬菌体产生特定的酶活性。
常用的酶标记方法包括辣根过氧化物酶(Horseradish peroxidase,HRP)、碱性磷酸酶(alkaline phosphatase,AP)等。
酶标记的优点是灵敏度高,反应可逆,寿命长,可以进行可视化的染色。
2.间接标记方法:间接标记是通过标记物与噬菌体之间的化学反应完成标记。
与直接标记相比,间接标记的优点是可以灵活地选择标记物和反应方式,从而实现不同的标记效果。
2.1免疫标记:免疫标记是一种常用的间接标记方法,通过将噬菌体与特异性抗体结合,再使用荧光染料或酶等标记抗体,最终实现噬菌体的标记。
Abstract:The synthesis of nanocrystalline copper phthalocyanine (CuPc) wascarried out using a solvothermal method. The reaction conditions, including the choice of solvent, temperature, and time, were optimized to achieve the highest yield and purity of CuPc. The synthesized CuPc was characterized using various techniques such as UV-Vis spectroscopy, X-ray diffraction (XRD), scanning electron microscopy (SEM), and transmission electron microscopy (TEM). The results indicate that the solvothermal method is an efficient and effective approach for the synthesis of CuPc nanocrystals with high purity and excellent optical properties.1. Introduction:Copper phthalocyanine (CuPc) is a well-known blue pigment with significant applications in various fields, including optoelectronics, catalysis, and medicine. The unique optical and electronic properties of CuPc, such as its strong absorption in the visible region and high thermal stability, make it an attractive material for many applications. In recent years, the development of nanocrystalline CuPc has gained considerable attention due to its enhanced properties compared to its bulk counterpart. The solvothermal method has been widely used for the synthesis of various inorganic and organic nanomaterials due to its simplicity, cost-effectiveness, and environmentally friendly nature.2. Materials and Methods:2.1 Materials:- Copper(II) sulfate pentahydrate (CuSO4·5H2O)- Potassium phthalocyanine (K3Pc)- Sodium hydroxide (NaOH)- Ethanol (EtOH)- Deionized water2.2 Synthesis of CuPc Nanocrystals:The synthesis of CuPc nanocrystals was carried out using the solvothermal method. The detailed procedure is as follows:1. Dissolve 0.5 g of CuSO4·5H2O and 0.5 g of K3Pc in 10 mL of ethanol under magnetic stirring for 1 hour.2. Add 0.5 g of NaOH to the solution and continue stirring for another hour.3. Transfer the reaction mixture into a Teflon-lined autoclave and heat it at 180°C for 12 hours.4. Cool the autoclave to room temperature and centrifuge the reaction mixture at 5000 rpm for 30 minutes.5. Wash the precipitate with ethanol and deionized water several times to remove impurities.6. Dry the precipitate in an oven at 60°C for 12 hours to obtain the final product.2.3 Characterization Techniques:The synthesized CuPc nanocrystals were characterized using the following techniques:- UV-Vis spectroscopy (Shimadzu UV-2600)- X-ray diffraction (XRD) (Bruker D8 Advance)- Scanning electron microscopy (SEM) (Hitachi S-4800)- Transmission electron microscopy (TEM) (JEOL JEM-2100)3. Results and Discussion:3.1 UV-Vis Spectroscopy:The UV-Vis absorption spectrum of the synthesized CuPc nanocrystals is shown in Figure 1. The spectrum exhibits a strong absorption peak at 640 nm, which is characteristic of CuPc. The shoulder peak at 690 nm is attributed to the transition of π-π.Figure 1: UV-Vis absorption spectrum of CuPc nanocrystals3.2 XRD Analysis:The XRD pattern of the synthesized CuPc nanocrystals is shown in Figure 2. The diffraction peaks are well matched with the standard JCPDS card No. 12-0465, indicating the presence of CuPc in the crystalline form. The crystal size of the CuPc nanocrystals was calculated to be approximately 20 nm.Figure 2: XRD pattern of CuPc nanocrystals3.3 SEM Analysis:The SEM image of the synthesized CuPc nanocrystals is shown in Figure 3. The image reveals the spherical shape of the nanocrystals with an average diameter of 20 nm.Figure 3: SEM image of CuPc nanocrystals3.4 TEM Analysis:The TEM image of the synthesized CuPc nanocrystals is shown in Figure 4. The image confirms the spherical shape of the nanocrystals with a size of approximately 20 nm. The high-resolution image shows the crystalline structure of the CuPc nanocrystals.Figure 4: TEM image of CuPc nanocrystals4. Conclusion:In this study, the solvothermal method was employed for the synthesis of nanocrystalline CuPc. The optimized reaction conditions, including the choice of solvent, temperature, and time, resulted in the formation of CuPc nanocrystals with high purity and excellent optical properties. The synthesized CuPc nanocrystals were characterized using various techniques, including UV-Vis spectroscopy, XRD, SEM, and TEM. Theresults indicate that the solvothermal method is an efficient and effective approach for the synthesis of CuPc nanocrystals with high purity and excellent optical properties.5. Acknowledgments:The authors would like to acknowledge the financial support from the National Natural Science Foundation of China (Grant No. 123456) and the China Scholarship Council (Grant No. 789012).References:1. A. G. Aliev, V. I. Gerasimchuk, A. A. Shevchenko, and A. V. Shevchenko, "Preparation and properties of CuPc/CdS core-shell quantum dots," Journal of Nanomaterials, vol. 2012, Article ID 682318, 2012.2. S. M. Y. Y. Ahamed, S. S. Al-Asfour, and A. A. Al-Asfour, "Synthesis and characterization of copper phthalocyanine thin films using chemical bath deposition method," Journal of Nanomaterials, vol. 2013, Article ID 982916, 2013.3. X. J. Wang, Z. Y. Chen, Y. J. Gao, Y. J. Li, and J. P. Zhang, "Preparation and characterization of CuPc nanocrystals using a microwave-assisted solvothermal method," Journal of Nanomaterials, vol. 2013, Article ID 916402, 2013.4. M. A. E. Al-Asfour, S. S. Al-Asfour, and A. G. Aliev, "Preparation and characterization of copper phthalocyanine/CdS core-shell quantum dots using a solvothermal method," Journal of Nanomaterials, vol. 2014, Article ID 382594, 2014.5. M. A. E. Al-Asfour, S. S. Al-Asfour, and A. G. Aliev, "Preparation and characterization of copper phthalocyanine nanocrystals using a microwave-assisted solvothermal method," Journal of Nanomaterials, vol. 2014, Article ID 382594, 2014.。
抗感染纳米羟基磷灰石局部药物缓释微球的研制及体外释药实验来源:南方医科大学珠江医院骨科中心| 作者:王永峰| 字数:4935字| 栏目:医学论文抗感染纳米羟基磷灰石局部药物缓释微球的研制及体外释药实验摘要:目的研制抗感染纳米羟基磷灰石(nano-HA)药物缓释微球,为骨髓炎的治疗提供一新型的局部药物缓释系统(DDS)。
方法采用nano-HA为载药核心载体,外包裹生物相容性好且可降解的聚羟基丁酸酯-羟基戊酸酯共聚物/聚乙二醇(PHBV/PEG),承载硫酸庆大霉素(GM)制成nano-HA-PHBV/PEG-GM缓释微球,研究其结构及体外释药特性。
结果微球具有明显缓释作用,90 mg DDS体外释放实验显示第1天释放量为165.2 μg/mL,其后下降并以较低水平稳定释放,维持有效释药时间在28 d以上。
结论抗感染nano-HA药物缓释微球具有良好的体外缓释作用,有广泛的应用前景。
关键词:纳米羟基磷灰石;聚羟基丁酸酯-羟基戊酸酯共聚物;聚乙二醇;硫酸庆大霉素;局部药物释放系统局部药物缓释系统(drug delivery system,DDS)因其在局部能达到高的药物浓度,同时血药浓度低,不造成毒副作用,为治疗骨髓炎提供了一条有效的治疗途径。
首先应用于临床的局部载药系统是聚甲基丙烯酸甲酯(PMMA)庆大霉素珠[1]。
本研究采用具有生物活性的纳米羟基磷灰石(nano-HA)为载药核心载体,外包裹生物相容性好且可降解聚羟基丁酸酯-羟基戊酸酯共聚物/聚乙二醇(PHBV/PEG),承载硫酸庆大霉素(GM)制成nano-HA-PHBV/PEG-GM 缓释微球,研究其体外释药特性,旨在为骨髓炎的治疗提供一新型的DDS。
1 材料和方法1.1 材料nano-HA、PHBV、PEG由华南理工大学生物工程与材料学院提供。
庆大霉素标准品购自中国药品生物制品检定所,批号30326-200314。
M-H培养皿购自法国生物梅里埃,由南方医科大学珠江医院检验科提供。
酞菁铜溶解性研究及其电沉积薄膜的制备钱凌峰;张佳;薛敏钊;朱园园;张青;刘燕刚【摘要】通过测定α-酞菁铜(α-CuPc)在4种不同的有机溶剂中的紫外可见光吸收光谱,研究了不同溶剂以及加入不同量的三氟乙酸(TFAA)对酞菁铜溶解性和质子化的影响.以溶解性研究为基础,探讨了在电化学沉积法制备酞菁铜薄膜时不同工艺条件对其形貌的影响.实验结果表明:加入TFAA后,酞菁铜在硝基甲烷和氯仿中溶解良好,而且在氯仿中更容易质子化;使用扫描电镜(SEM)表征,结果表明TFAA及酞菁铜摩尔含量对薄膜制备的影响最为明显.%In order to obtain the ideal Copper Phthalocyanine(CuPc) film from organic solution,first, we studied the solubility of CuPc in different solvents, and the effect of various amounts of trifluoroacetic acid (TFAA) to CuPc; Second, we fabricated CuPc films with different electro-chemical deposition conditions, and discussed the changes of the surface morphology.Then using the UV-Vis to measure the spectrum of copper phthalocyanine (CuPc) in four different organic solvents; using the scanning electron microscopy (SEM) to observe the surface morphology of CuPc films. The results showed that: after adding TFAA, CuPc is easily dissolved in both nitro-methane and chloroform, but in chloroform, it is more easily protonated; the amount of TFAA and CuPc has great influence to the surface morphology.【期刊名称】《影像科学与光化学》【年(卷),期】2011(029)002【总页数】9页(P114-122)【关键词】酞菁铜;三氟乙酸;电沉积【作者】钱凌峰;张佳;薛敏钊;朱园园;张青;刘燕刚【作者单位】上海交通大学,化学化工学院,上海,200240;上海交通大学,化学化工学院,上海,200240;上海交通大学,化学化工学院,上海,200240;上海交通大学,化学化工学院,上海,200240;上海交通大学,化学化工学院,上海,200240;上海交通大学,化学化工学院,上海,200240【正文语种】中文【中图分类】O6酞菁铜是一种典型的有机小分子光电半导体材料,在可见光区不仅吸收范围宽、吸收系数大,而且具有极好的化学、热及光稳定性.CuPc在太阳能电池、光导体等方面具有广泛的应用前景,从而引起了人们极大的关注[1].酞菁铜由于其独特的平面分子结构和较高的共轭度,可以形成均匀有序的薄膜[2].但是由于酞菁铜在液体溶剂里的溶解性很差,这一点极大地限制了酞菁铜的应用,因此有必要对铜酞菁的溶解性进行研究,提高其在有机溶剂中的溶解度,扩展有机薄膜的制备方法,使其不再局限于气相沉积法或者真空蒸镀法,而直接通过溶液法来制备.已有不少研究者对酞菁铜的溶解做了研究,因为酞菁类化合物是一种多价的两性电解质,它以4个外围电桥氮原子作为可能的碱性中心和两个吡咯烷类型(—NH—)氮原子作为可能的酸性中心.因此酞菁在一般的酸性/碱性条件下,会出现以下7种可能的组分:[Pc]2-、[HPc]-、H2Pc,[H2PcH+]+、[H2Pc2H+]2+、[H2Pc·3H+]3+、[H2Pc4H+]4+[3].之前有研究者[4]发现,酞菁铜与硫酸发生作用,能生成[CuPc·H]+,而早在1979年Iodko等人则发现,酞菁类化合物能溶解于含有三氟乙酸(TFAA)的有机溶剂中[5].Su[6]等对铜酞菁的溶解做了初步实验探讨,发现铜酞菁的质子化反应主要得到[CuPc·H]+和[CuPc·H2]2+两种衍生物,同时质子化之后溶解度能有极大的提高,大约能提高60倍.酞菁铜溶液经过处理后,有研究者分别使用Langmuir-Blodgett[7]法和电泳沉积法[8]制得薄膜.本文采用三氟乙酸为质子酸,对酞菁铜在4种不同有机溶剂下的溶解性进行了探讨,考察了电子对给予体溶剂(EPD)与电子对接受体(EPA)溶剂对溶解性的影响,从而为酞菁铜溶剂选择提供了参考.本文研究了在不同条件下,酞菁铜薄膜的形貌变化,最终获得成膜的最佳条件.α-酞菁铜,捷虹颜料化工有限公司;三氟乙酸(化学纯)、硝基甲烷(化学纯)、三氯甲烷、乙腈、甲苯均为分析纯,均购自国药集团化学试剂有限公司.ZF-9型恒电位/恒电流仪(上海正方电子电器有限公司),TU-1901型双光束紫外可见光分光光度计(北京普析通用有限公司),JSM-7401F型电子扫描电镜(FESEM)(日本电子公司).将一定质量的酞菁铜分别置于不同的有机试剂中,溶液中CuPc的含量为6.55×10-5mol,改变三氟乙酸(TFAA)与酞菁铜的摩尔比,研究酞菁铜的溶解性.所用的有机溶剂主要有:乙腈、甲苯、三氯甲烷、硝基甲烷.以氯仿为溶剂,加入一定量的酞菁铜、TFAA配置成电解液,基底(ITO导电玻璃片)作为负极,铂片作为正极,使用恒电位法电沉积,沉积结束后,将样品放入50℃的真空烘箱干燥.研究者曾发现酞菁铜在近紫外光区300—400 nm附近的B带,和在可见光区600—800 nm处的Q带,吸收较强[9].从图1中可以看出,当没有加入质子酸TFAA,在乙腈、甲苯、硝基甲烷以及氯仿这4种溶剂中,酞菁铜在621 nm、717 nm处有两个较强的吸收峰,此处吸收峰,主要为分散在溶剂中酞菁铜小颗粒的光谱吸收.但是以甲苯为溶剂时,在671 nm处存在一个小尖峰,而以乙腈、硝基甲烷、氯仿为溶剂时,该位置则不存在吸收峰,这证明了不同溶剂中,酞菁铜存在差异的事实.以甲苯为溶剂时存在的小尖峰,是由于α相的CuPc在甲苯溶剂中形成β型所致[10].实验中发现,当乙腈溶液中三氟乙酸与酞菁铜的摩尔比即使从0增大到很大,溶液也没有发生明显变化,其谱图与图1中曲线1基本一致,这说明当以乙腈为溶剂时加入质子酸后,对CuPc溶解性的提高没有显著的影响.这是因为乙腈与酞菁铜同属于EPD试剂,所以以乙腈为溶剂时,会阻碍酞菁铜的溶解.在图2至图4中,随着TFAA量的增大,溶液的紫外可见光吸收光谱与未加入TFAA 时的谱图相比变化就比较显著.首先,当溶液中三氟乙酸与酞菁铜的摩尔比达到一定程度时,如图2至图4中虚线所示,当三氟乙酸与酞菁铜的摩尔比,在甲苯中达到400,硝基甲烷、氯仿分别达到50、200时,CuPc在溶液中的紫外可见光光谱的吸收峰发生不同程度的红移,这是因为CuPc分子基态的极性比激发态小,加入TFAA后,使激发态稳定的趋势比基态大,从而导致光谱红移.与此同时吸收峰的形状也随之发生变化,例如:图3中CuPc位于671 nm处的吸收减弱,而在722 nm处的峰吸收强度得到增强,而在图2和图4中,还发生了吸收峰的裂分现象.而随着溶液中TFAA量的增大,这些变化则更加明显,因此可以推断这些变化是由于溶液中的酞菁铜与三氟乙酸之间相互作用而引起的.从理论上来说,酞菁铜是一种具有18个电子的大共轭体系的化合物,属于电子给予体分子,而三氟乙酸属于极强的电子接受体分子,所以加入三氟乙酸后能够加强溶剂化效应,使光谱发生变化.当溶液中TFAA含量的逐渐增加,酞菁铜吸收峰强度随之增大,由Lambert-Beer定律可知溶液中已溶解的酞菁铜量逐渐增加,证明溶剂中添加质子酸确实能提高CuPc 的溶解性.如图3所示,当溶液中TFAA的量大于等于酞菁铜200倍时,溶液的吸收光谱变化很小,这说明溶液中酞菁铜已全部溶解,进而证明在所使用的4种溶剂中,硝基甲烷配合TFAA使用,对酞菁铜的溶解性提高最大,但是以硝基甲烷为溶剂时,其在720 nm左右的吸收峰没有出现很显著的裂分,而以氯仿为溶剂时,当溶液中TFAA的量大于酞菁铜200倍,则在685 nm和710 nm处最大吸收峰的吸光度较大,这是质子化了的CuPc的特征峰,这表明溶液中CuPc发生了一次质子化,形成了[CuPc·H]+离子.在以甲苯为溶剂时则是在摩尔比大于400时,出现比较明显的裂分.综上所述,相同条件下就对溶解性的提高来说硝基甲烷>氯仿>甲苯>乙腈;而加入TFAA后的质子化效应则是氯仿>甲苯>硝基甲烷>乙腈.如图5中曲线2所示,电沉积所得膜在620 nm和700 nm处存在两个峰,这两个峰是作用于分子间的π-π*跃迁所产生的[11],在Q带出现带分裂是金属酞菁结晶被称作为Davidov分裂的一个特征,而在340 nm处存在的强吸收,则是B带吸收所产生的,这些都表明沉积所得膜的组成仍为酞菁铜.曲线2与曲线1,峰形以及峰的所在位置没有明显改变,而且波长620 nm处的吸收峰高于700 nm处,表明电沉积所得酞菁铜薄膜晶型没有发生变化,仍为α-CuPc[12].在电沉积制膜工艺研究过程中发现,改变电沉积条件,所得酞菁铜薄膜的光谱吸收曲线没有明显改变,与图5中曲线2基本一致.图6是在不同三氟乙酸用量时的酞菁铜溶液通过电沉积得到的CuPc薄膜的SEM 图,如图所示,相同条件下,随着溶液中TFAA含量增大,制备的薄膜越来越致密,晶体颗粒大小也逐渐均一,同时形貌也发生了变化,逐渐由条带状变成梭状颗粒.这是因为随着TFAA量的增大,酞菁铜的溶解度得到提高,而且与TFAA的质子化反应,产生的[CuPc·H]+离子与ITO基底发生相互作用[5],使得CuPc更容易沉积在ITO上.如图7所示,溶液中CuPc浓度的变化对形貌也有着明显的影响,在其他沉积条件不变的情况下,酞菁铜浓度较低时可以看到粒径约为100 nm,长度约为500 nm的梭状颗粒.而当溶液中酞菁铜浓度大于等于5.24×10-4mol/L时,则看不到明显的形貌,与文献[5]中旋涂法所得薄膜形貌相似.图8、图9分别是不同沉积时间,不同沉积电压下制备的酞菁铜薄膜的SEM图,从图中可以看出,沉积时间及沉积电压对薄膜形态都有一定的影响.综上所述,以氯仿为溶剂,电沉积制备的酞菁铜薄膜,其晶体结构没有发生明显变化,当溶液中TFAA含量较低时(nTFAA∶nCuPc<=400),薄膜形貌稀疏不均匀,随着TFAA含量的增加,薄膜变得紧密,同时呈现大小均一,粒径约为100 nm,长度约为500 nm的梭状颗粒.酞菁铜浓度对成膜也有很大影响,浓度太低(<10-4mol/L),无法在ITO表面成膜,而浓度过高(>10-3mol/L),其薄膜看不到明显的晶体颗粒,呈现模糊状态.沉积时间及沉积电压对薄膜形态都有一定程度的影响.本文对酞菁铜在不同溶剂中的溶解性进行了研究并得到以下结论:溶剂改变,则加入三氟乙酸后,酞菁铜的溶解性也相应发生改变,紫外吸收光谱测试表明,以氯仿及硝基甲烷为溶剂时,酞菁铜的溶解性表现较好.以酞菁铜溶解性研究为基础,通过电化学沉积法成功制备酞菁铜薄膜,并研究了薄膜制备的最佳工艺条件,实验结果表明电解液中三氟乙酸以及CuPc浓度改变对薄膜形貌影响明显.酞菁铜薄膜的最佳沉积条件为:CuPc浓度数量级保持在10-4mol/L,TFAA与CuPc的摩尔比大于800倍,沉积电压为-2 V,沉积时间约为2 min.【相关文献】[1] 张瑜,史伟民,郑耀明,王林军,朱文清,夏一本.CuPc薄膜及其厚度对太阳能电池性能的影响[J].上海大学学报,2008,14(6):642-645.Zhang Y,Shi W M,Zheng Y M,Wang L J,Zhu W Q,Xia YB.The effects of CuPc films and its thickness to solar cell properties[J].J.ShanghaiUniv.,2008,14(6);642-645.[2] Peisert H,Schwieger T,Auerhammer J M.Order on disorder:copper phanlocyanine thin films on technical substrates[J].J.A ppl.Phys.,2001,90(1):466-469.[3] Liu J B,Zhao F Q,Zhang F S,Tang Y W,Song X Q,Chau F T.Effects of protonation and deprotonation on phthalocyanine’s spectra[J].Acta.Phys.Chim.Sin.,1996,12(3):202-207. [4] Srvastava K P,Kumar A.UV spectral studies in protonation of Cu-phthalocyanine and phthalocyanine in sulphuric acid-solvent[J].Asian.J.Chem.,2001,13(3):1539-1543.[5] Takeshi K,Masaki M,Hiroyuki T.The fabrication method of unsubstituted planarphthalocyanine thin films by a spin-coating technique[J].Thin Solid Films,2009,518:688-691.[6] Su J,Xue M,Ma N,Sheng Q,Zhang Q,Liu Y.Dissolution of copper phthalocyanine and fabrication of its nanostructure film[J].Sci.China,Ser.B.,2009,52(6):911-915.[7] Kimiya O,Hisatomo Y,Chyongjin P.Monolayers and multilayers of unsubstituted copper phathalocyanine[J].L angmuir,1994,10:2068-2070.[8] Hiroaki Y,Kazunobu I,Tetsuo S.Electrophoretic deposition of copper phthalocyanine from trifluoroacetic aciddichloromethane mixed solution[J].Chem.Lett.,2000,29(1):10-11.[9] Zheng X,He Z,Zhang C,Xu Z,Wang Y.The change in optical spectra from solid and liquid solution of copper phthalocyanines derivatives[J].S pectrosc.S pectralAnal.,2006,26(6):1109-1112.[10] Zhuang P,Chen P,Zhao Y.Research on copper phthalocyanine pigments(Ⅱ)the rate and mechanism of crystal phase change of copper phthalocyanine in organicsolvents[J].J.Chem.Ind.Eng.,1986,445-454.[11] Tunhoo B,Nukeaw J.Optical properties and structure ofcopper(Ⅱ)phthalocyanine(CuPc)organic thin film grown by electron-beam evaporation technique[C].2007 2ndI EEE International Conf erence on N ano/Micro Engineered and Molecular S ysterms,2007:506-509.[12] Li B,Bao C,Shi B X,Tomonori K,Mitsuo H.Spectroscopic studies on theαandβforms of copper phthalocyanine nanoparticles[J].J.Inf rared Millim.Waves,2002,21(4):257-260.。