IRFP044中文资料

This document was generated on 08/20/2012PLEASE CHECK FOR LATEST PART INFORMATIONPart Number:44432-0403Status:ActiveOverview:Micro-Fit 3.0™ ConnectorsDescription:3.00mm Pitch Micro-Fit 3.0 BMI™ Header, Surface Mount Compatible, Dual Row,Vertical, with PCB Polarizing Peg, 4 Circuits, 0.76µm Gold (Au) Selective PlatingDocuments:3D ModelRoHS Certificate of Compliance (PDF)Drawing (PDF)Product Literature (PDF)Product Specification PS-44300-001 (PDF)Agency CertificationCSA LR19980TUV R72081037ULE29179GeneralProduct Family PCB Headers Series44432Application Board-to-Board, Power, Wire-to-BoardCommentsHigh Temperature|Square Pin|Offset Through Hole Mounting|Solder TypeOverviewMicro-Fit 3.0™ Connectors Product Literature Order No 987650-5984Product Name Micro-Fit 3.0 BMI™UPC800756378640PhysicalBreakawayNo Circuits (Loaded)4Circuits (maximum)4Color - ResinBlack Durability (mating cycles max)30Flammability94V-0Glow-Wire Compliant No Material - MetalBrass Material - Plating MatingGold Material - Plating Termination TinMaterial - Resin High Temperature Thermoplastic Net Weight1.248/g Number of Rows 2Orientation Vertical PC Tail Length 3.30mm PCB Locator Yes PCB RetentionYes PCB Thickness - Recommended 1.60mm Packaging TypeTray Pitch - Mating Interface 3.00mm Plating min - Mating0.762µm Plating min - Termination 2.540µm Polarized to PCB Yes Shrouded Fully StackableNo Surface Mount Compatible (SMC)YesTemperature Range - Operating -40°C to +105°C Termination Interface: StyleThrough HoleSeriesimage - Reference onlyEU RoHSChina RoHSELV and RoHS Compliant REACH SVHCContains SVHC: No Low-Halogen Status Not Low-HalogenNeed more information on product environmental compliance?Email productcompliance@For a multiple part number RoHS Certificate of Compliance, click herePlease visit the Contact Us section for any non-product compliance questions.Search Parts in this Series 44432SeriesMates With44133 , 44764 , 44769ElectricalCurrent - Maximum per Contact5AVoltage - Maximum250VSolder Process DataDuration at Max. Process Temperature (seconds)5Lead-free Process Capability Wave Capable (TH only)Max. Cycles at Max. Process Temperature1Process Temperature max. C260Material InfoReference - Drawing NumbersProduct Specification PS-44300-001, RPS-44300-001Sales Drawing SD-44432-001This document was generated on 08/20/2012PLEASE CHECK FOR LATEST PART INFORMATION分销商库存信息: MOLEX 0444320403。

This document was generated on 08/20/2012PLEASE CHECK FOR LATEST PART INFORMATIONPart Number:44067-0201Status:ActiveOverview:Micro-Fit 3.0™ ConnectorsDescription:3.00mm Pitch Micro-Fit 3.0™ Wire-to-Board Header, Dual Row, Vertical for up to 3.56mm Thick PCB, 2 Circuits, Tin (Sn) PlatingDocuments:3D ModelProduct Specification PS-43045 (PDF)Drawing (PDF)RoHS Certificate of Compliance (PDF)GeneralProduct Family PCB Headers Series44067Application Power, Wire-to-BoardComments High Temperature, Polarization Key to PCB OverviewMicro-Fit 3.0™ Connectors Product Name Micro-Fit 3.0™UPC822350040600PhysicalBreakawayNo Circuits (Loaded)2Circuits (maximum)2Color - ResinBlack Durability (mating cycles max)30First Mate / Last Break No Glow-Wire Compliant No Guide to Mating Part No Keying to Mating Part None Lock to Mating PartYes Material - Plating MatingTin Material - Plating Termination TinMaterial - Resin High Temperature Thermoplastic Net Weight0.488/g Number of Rows 2Orientation Vertical PC Tail Length 4.01mm PCB Locator Yes PCB RetentionYes PCB Thickness - Recommended 3.60mm Packaging TypeTray Pitch - Mating Interface3.00mm Pitch - Termination Interface 3.00mm Plating min - Mating2.540µm Plating min - Termination 2.540µm Polarized to PCB Yes Shrouded Fully StackableNo Surface Mount Compatible (SMC)YesTemperature Range - Operating -40°C to +105°CTermination Interface: StyleThrough Hole - Kinked Pin ElectricalCurrent - Maximum per Contact 5A Voltage - Maximum250VSeriesimage - Reference onlyEU RoHSChina RoHSELV and RoHS Compliant REACH SVHCContains SVHC: No Low-Halogen Status Low-HalogenNeed more information on product environmental compliance?Email productcompliance@For a multiple part number RoHS Certificate of Compliance, click herePlease visit the Contact Us section for any non-product compliance questions.Search Parts in this Series 44067SeriesMates With43025 Micro-Fit™ HeaderSolder Process DataDuration at Max. Process Temperature (seconds)30Lead-free Process Capability SMC & Wave Capable (TH only)Max. Cycles at Max. Process Temperature3Process Temperature max. C260Material InfoReference - Drawing NumbersProduct Specification PS-43045Sales Drawing SD-44067-001This document was generated on 08/20/2012PLEASE CHECK FOR LATEST PART INFORMATION分销商库存信息: MOLEX 0440670201。

IRFP044NHEXFET ® Power MOSFETPD - 9.1410AFifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit,combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole.SDGV DSS = 55V R DS(on) = 0.020ΩI D = 53Al Advanced Process Technology l Dynamic dv/dt Ratingl 175°C Operating Temperature l Fast SwitchinglFully Avalanche RatedDescriptionTO-247ACParameterMax.UnitsID @ T C = 25°C Continuous Drain Current, V GS @ 10V 53I D @ T C = 100°C Continuous Drain Current, V GS @ 10V 37A I DMPulsed Drain Current 180P D @T C = 25°C Power Dissipation 120W Linear Derating Factor 0.77W/°C V GS Gate-to-Source Voltage± 20V E AS Single Pulse Avalanche Energy 230mJ I AR Avalanche Current28A E AR Repetitive Avalanche Energy 12mJ dv/dt Peak Diode Recovery dv/dt 5.0V/ns T J Operating Junction and-55 to + 175T STGStorage Temperature RangeSoldering Temperature, for 10 seconds 300 (1.6mm from case )°CMounting torque, 6-32 or M3 screw10 lbf•in (1.1N•m)Absolute Maximum RatingsParameterTyp.Max.UnitsR θJC Junction-to-Case––– 1.3R θCS Case-to-Sink, Flat, Greased Surface 0.24–––°C/WR θJAJunction-to-Ambient–––40Thermal Resistance8/25/97IRFP044NElectrical Characteristics @ T J = 25°C (unless otherwise specified)V DD = 25V, starting T J = 25°C, L = 410µH R G = 25Ω, I AS = 28A. (See Figure 12) Repetitive rating; pulse width limited bymax. junction temperature. ( See fig. 11 )Notes:I SD ≤ 28A, di/dt ≤ 240A/µs, V DD ≤ V (BR)DSS ,T J ≤ 175°CPulse width ≤ 300µs; duty cycle ≤ 2%.Uses IRFZ46N data and test conditionsSource-Drain Ratings and CharacteristicsIRFP044NFig 1. Typical Output Characteristics Fig 3. Typical Transfer CharacteristicsFig 4. Normalized On-ResistanceVs. TemperatureFig 2. Typical Output Characteristics11010010000.1110100I , D r a i n -t o -S o u r c e C u r r e n t (A )DV , D rain-to-Source Voltage (V)D S11010010000.1110100I , D r a i n -t o -S o u r c e C u r r e n t (A )DV , Drain-to-Source Voltage (V)D S110100100045678910G S V , Ga te-to-So urce Voltage (V )D I , D r a i n -t o -S o u r c e C u r r e n t (A )0.00.51.01.52.02.5-60-40-2020406080100120140160180JT , Junction Temperature (°C)R , Dr a i n -t o -S o u r c e O n R e s i s t a n c eD S (o n )(N o r m a l i z e d )IRFP044NFig 8. Maximum Safe Operating AreaFig 6. Typical Gate Charge Vs.Gate-to-Source VoltageFig 5. Typical Capacitance Vs.Drain-to-Source Voltage Fig 7. Typical Source-Drain Diode Forward Voltage040080012001600200024002800110100C , C a p a c i t a n c e (p F )D SV , Drain-to-Source Voltage (V)048121620102030405060Q , Total G ate Charge (nC)GV , G a t e -t o -S o u r c eV o l t a g e (V )G S 11010010000.40.81.21.62.02.4V , Source-to-D rain Voltage (V)I , R e v e r s e D r a i n C u r r e n t (A )S DS D1101001000110100V , D rain-to-Source Voltage (V)DSI , D r ai n C u r r e n t (A )DIRFP044NFig 9. Maximum Drain Current Vs.Case TemperatureFig 10a.Switching Time Test CircuitV V d(on)rd(off)fFig 10b. Switching Time WaveformsR V DDFig 11. Maximum Effective Transient Thermal Impedance, Junction-to-CaseIRFP044NV DDV I ASVChargeDSCurrent Sampling Resistors10 VFig 12c. Maximum Avalanche EnergyVs. Drain CurrentFig 13b. Gate Charge Test CircuitFig 13a. Basic Gate Charge Waveform Fig 12b. Unclamped Inductive WaveformsFig 12a. Unclamped Inductive Test Circuit100200300400500255075100125150175JE , S i n g l e P u l s e A v a l a n c h e E n e r g y(m J )A S Starting T , Junction Temperature (°C)IRFP044NFig 14. For N-Channel HEXFETS* V GS = 5V for Logic Level DevicesPeak Diode Recovery dv/dt Test CircuitV DDIRFP044NPart Marking InformationTO-247ACPackage OutlineTO-247AC OutlineDimensions are shown in millimeters (inches)LEAD AS SIGN MENTSNOTES :- D - 5.30 (.209)4.70 (.185)2.50 (.089)1.50 (.059)43X 0.80 (.031)0.40 (.016)2.60 (.102)2.20 (.087)3.40 (.133)3.00 (.118)3X 0.25 (.010)MC A S4.30 (.170)3.70 (.145)- C -2X5.50 (.217)4.50 (.177)5.50(.217)0.25 (.010)1.40 (.056)1.00 (.039)3.65(.143)3.55(.140)D MMB - A -15.90 (.626)15.30 (.602)- B -12320.30 (.800)19.70 (.775)14.80 (.583)14.20 (.559)2.40 (.094)2.00 (.079)2X 2X5.45 (.215)1 DIME NSIO NING & TO LERAN CING PE R AN SI Y 14.5M, 1982.2 CO NTRO LLING DIMENS IO N : IN CH.3 CO NFORM S TO JEDE C O UTLINE TO-247-A C.1 - G ATE2 - DRAIN3 - SO URCE4 - DRAINWORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371/Data and specifications subject to change without notice.8/97。

高压MOS管----IRF系列学习杂记2008-01-29 15:04:28 阅读2856 评论2 字号：大中小订阅IRF024 N-场效应60 17 60 TO-204AAIRF034 N-场效应60 30 90 TO-204AEIRF035 N-场效应60 25 90 TO-204AEIRF044 N-场效应60 30 150 TO-204AEIRF045 N-场效应60 30 150 TO-204AEIRF054 N-场效应60 30 180 TO-204AAIRF120 N-场效应100 8.0 40 TO-3IRF121 N-场效应60 8.0 40 TO-3IRF122 N-场效应100 7.0 40 TO-3IRF123 N-场效应60 7.0 40 TO-3IRF130 100V 14A 79W N-场效应IRF130(铁)NMOS GDS 100V14A79W75/45nS0.16 功放开关IRF131 N-场效应60V14A 75W TO-3IRF132 N-场效应100V12A75W TO-3IRF133 N-场效应60V12A 75W TO-3IRF140 N-场效应100V 27A 125W TO-204AEIRF141 N-场效应60V 27A 125W TO-204AEIRF142 N-场效应100V24A 125W TO-204AEIRF143 N-场效应60V 24A 125W TO-204AEIRF150 N-场效应100V 40A 150W TO-204AEIRF151 N-场效应60V 40A 150W TO-204AEIRF152 N-场效应100V 33A 150W TO-204AEIRF153 N-场效应60V33A 150W TO-204AEIRF15N65 650V 5A 80W MOSIRF16N65 650V 6A 80W MOSIRF220 N-场效应200V 5.0A 40W TO-3IRF221 N-场效应150V 5.0A 40W TO-3IRF223 N-场效应150V 4.0A 40W TO-3IRF224 N-场效应250V3.8A 40W TO-204AAIRF225 N-场效应250V 3.3A 40W TO-204AAIRF230 N-场效应200V 9.0A 75W TO-3IRF230(铁)NMOS GDS 200V9A75W50/40nS0.4 功放开关IRF231 N-场效应150V 9.0A 75W TO-3IRF232 N-场效应200V 8.0A 75W TO-3IRF233 N-场效应150V 8.0A 75W TO-3IRF234 N-场效应250V 8.1A 75W TO-204AAIRF235 N-场效应250V 6.5A 75W TO-204AAIRF240 N-场效应200V 18A 125W TO-204AEIRF241 N-场效应150V 18A 125W TO-204AEIRF242 N-场效应200V 16A 125W TO-204AEIRF243 N-场效应150V 16A 125W TO-204AEIRF244 N-场效应250V 14A 125W TO-204AAIRF245 N-场效应250V 13A 125W TO-204AAIRF250 N-场效应200V 30A 150W TO-204AEIRF251 N-场效应150V 30A 150W TO-204AEIRF252 N-场效应200V 25A 150W TO-204AEIRF253 N-场效应150V 25A 150W TO-204AEIRF254 N-场效应250V 22A 150W TO-204AEIRF255 N-场效应250V 20A 150W TO-204AEIRF2807 70V 78A 180W MOSIRF320 N-场效应400V 3.0A 40W TO-3IRF3205 55V 110A 200W MOSIRF321 N-场效应350V 3.0A 40W TO-3IRF322 N-场效应400V 2.5A 40W TO-3IRF323 N-场效应350V 2.5A 40W TO-3IRF330 N-场效应400V 5.5A 75W TO-3IRF332 N-场效应400V 4.5A 75W TO-3IRF333 N-场效应350V 4.5A 75W TO-3IRF340 N-场效应400V 10A 125W TO-3IRF341 N-场效应350V 10A 125W TO-3IRF342 N-场效应400V 8.0A 125W TO-3IRF343 N-场效应350V 8.0A 125W TO-3IRF350 N-场效应400V 15A 150W TO-3IRF351 N-场效应350V 15A 150W TO-3IRF352 N-场效应400V 13A 150W TO-3IRF353 N-场效应350V 13A 150W TO-3IRF360 N-场效应400V 25A 300W TO-204AEIRF362 N-场效应400V 22A 300W TO-204AEIRF3710 100V 46A 150W MOSIRF420 N-场效应500V 2.5A 50W TO-3IRF421 N-场效应450V 2.5A 50W TO-3IRF422 N-场效应500V 2.0A 50W TO-3IRF423 N-场效应450V 2.0A 50W TO-3IRF430 N-场效应500V 4.5A 75W TO-3IRF431 N-场效应450V 4.5A 75W TO-3IRF432 N-场效应500V 4.0A 75W TO-3IRF433 N-场效应450V 4.0A 75W TO-3IRF440 N-场效应500V 8.0A 125W TO-3IRF440(铁)NMOS GDS 500V8A125W35/30nS0.85 功放开关IRF441 N-场效应450V 8.0A 125W TO-3IRF442 N-场效应500V 7.0A 125W TO-3IRF443 N-场效应450V 7.0A 125W TO-3IRF448 N-场效应500V 9.6A 130W TO-204AAIRF449 N-场效应500V 8.6A 130W TO-204AAIRF450 N-场效应500V 13A 150W TO-3IRF450(铁)NMOS GDS 500V13A125W66/60nS0.4 功放开关IRF451 N-场效应450V 13A 150W TO-3IRF452 N-场效应500V 12A 150W TO-3IRF453 N-场效应450V 12A 150W TO-3IRF460 N-场效应500V 21A 300W TO-204AEIRF460(铁)NMOS GDS 500V 21AW66/60nS0.4 功放开关IRF462 N-场效应500V 19A 300W TO-204AEIRF48 N-场效应60V50A190W TO-220ABIRF510 N-场效应100V 5.6A 43W TO-220ABIRF511 N-场效应80V 5.6A 43W TO-220ABIRF512 N-场效应100V 4.9A 43W TO-220ABIRF513 N-场效应80V 4.9A 43W TO-220ABIRF520 N-场效应100V 9.2A 60W TO-220ABIRF521 N-场效应80V 9.2A 60WTO-220ABIRF522 N-场效应100V 8A 60W TO-220ABIRF523 N-场效应80V 8A 60W TO-220ABIRF530 N-场效应100V 14A 79W TO-220ABIRF530 N-FET100V14A79W 51/36ns0.18ohmIRF530 NMOS GDS 100V14A79W51/36nS0.18 功放开关IRF531 N-场效应80V 14A 79W TO-220ABIRF532 N-场效应100V 12A 79W TO-220ABIRF533 N-场效应80V 12A 79W TO-220ABIRF540 NMOS+D GDS 100V28A150W110/75nS0.077 功放开关IRF540A NMOS GDS 100V28A107W Id m=110A/0.052Ω 功放开关IRF541 NMOS GDS 80V28A150W110/75nS0.077 功放开关IRF542 N-场效应100V 25A 150W TO-220ABIRF543 N-场效应80V 25A 150W TO-220ABIRF610 NMOS GDS 200V3.3A43W26/13nS1.5 功放开关IRF611 N-场效应150V 3.3A 43W TO-220ABIRF612 N-场效应200V 2.6A 43W TO-220ABIRF614 N-场效应250V 2.0A 20W TO-220ABIRF615 N-场效应250V 1.6A 20W TO-220ABIRF620 N-场效应200V 5A 40W TO-220ABIRF621 N-场效应150V 5A 40W TO-220ABIRF622 N-场效应200V 4A 40W TO-220ABIRF623 N-场效应150V 4A 40W TO-220ABIRF624 N-场效应250V 3.8A 40W TO-220ABIRF625 N-场效应250V 3.3A 40W TO-220ABIRF630 NMOS GDS 200V9A75W50/40nS0.4 功放开关IRF631 N-场效应150V 9A 75W TO-220ABIRF632 N-场效应200V 8A 75W TO-220ABIRF633 N-场效应150V 8A 75W TO-220ABIRF634 N-场效应250V 8.1A 75W TO-220ABIRF635 N-场效应250V 6.5A 75W TO-220ABIRF640 N-FET GDS 200V18A125W 77/54ns0.18ohm功放开关IRF641 N-场效应150V 18A 125W TO-220ABIRF642 N-场效应200V 16A 125W TO-220ABIRF643 N-场效应150V 16A 125W TO-220ABIRF644 N-场效应250V 14A 125W TO-220ABIRF645 N-场效应250V 13A 125W TO-220ABIRF710 N-场效应400V 2.0A 36W TO-220ABIRF711 N-场效应350V 2.0A 36W TO-220ABIRF712 N-场效应400V 1.7A 36W TO-220ABIRF713 N-场效应350V 1.7A 36W TO-220ABIRF720 N-场效应GDS 400V 3.3A 50W TO-220AB 20nS1.8功放开关IRF721 N-场效应350V 3.3A 50W TO-220ABIRF722 N-场效应400V 2.8A 50W TO-220ABIRF723 N-场效应350V 2.8A 50W TO-220ABIRF730 NMOS GDS 400V5.5A75W29/24nS1.0 功放开关IRF732 N-场效应400V 4.5A 74W TO-220ABIRF733 N-场效应350V 4.5A 74W TO-220ABIRF740 N-FET400V10A125W 41/36ns0.55ohm 功放开关IRF741 N-场效应350V 10A 125W TO-220ABIRF742 N-场效应400V 8.3A 125W TO-220ABIRF743 N-场效应350V 8.3A 125W TO-220ABIRF820 N-场效应500V 2.5A 50W TO-220ABIRF821 N-场效应450V 2.5A 50W TO-220ABIRF822 N-场效应500V 2.2A 50W TO-220ABIRF823 N-场效应450V 2.2A 50W TO-220ABIRF830 NMOS GDS 500V4.5A75W23/23nS1.5 功放开关IRF831 N-场效应450V 4.5A 74W TO-220ABIRF832 N-场效应500V 4.0A 74W TO-220ABIRF833 N-场效应450V 4.0A 74W TO-220ABIRF840 NMOS GDS 500V8A125W35/33nS0.85 功放开关IRF841 N-场效应450V 8.0 125W TO-220ABIRF842 N-场效应500V 7.0 125W TO-220ABIRF843 N-场效应450V 7.0 125W TO-220ABIRF9130 P-场效应100V-12A 75W TO-3IRF9131 P-场效应60V-12A 75W TO-3IRF9132 P-场效应100V-10A 75W TO-3IRF9133 P-场效应60V –10A 75W TO-3IRF9140 P-场效应100V –19A 125W TO-3IRF9141 P-场效应60V –19A 125W TO-3IRF9142 P-场效应100V –15A 125W TO-3IRF9143 P-场效应60V –15A 125W TO-3IRF9230 P-场效应200V6.5A 75W TO-3IRF9231 P-场效应150V6.5A 75W TO-3IRF9232 P-场效应200V5.5A 75W TO-3IRF9233 P-场效应150V5.5A 75W TO-3IRF9240 P-场效应200V –11A 125W TO-3IRF9241 P-场效应150V –11A 125W TO-3IRF9242 P-场效应200V9.0A 125W TO-3IRF9243 P-场效应150V9.0A 125W TO-3IRF9510 P-场效应100V3.0A 20W TO-220ABIRF9511 P-场效应60V3.0A 20W TO-220ABIRF9512 P-场效应100V2.5A 20W TO-220ABIRF9513 P-场效应60V2.5A 20W TO-220ABIRF9520 P-场效应100V6.0A 40W TO-220ABIRF9521 P-场效应60V6.0A 40W TO-220ABIRF9522 P-场效应100V5.0A 40W TO-220ABIRF9523 P-场效应60V5.0A 40W TO-220ABIRF9530 PMOS GDS 100V12A75W140/140nS0.4 功放开关IRF9531 PMOS GDS 60V12A75W140/140S0.3 功放开关IRF9532 P-场效应100V –10A 75W TO-220ABIRF9533 P-场效应60V –10A 75W TO-220ABIRF9540 P-场效应100V –19A 125W TO-220ABIRF9541 PMOS GDS 60V19A125W140/141nS0.2 功放开关IRF9542 P-场效应100V –15A 125W TO-220ABIRF9543 P-场效应60V –15A 125W TO-220ABIRF9610 PMOS GDS 200V1A20W25/15nS2.3 功放开关IRF9611 P-场效应150V1.75A 20W TO-220ABIRF9612 P-场效应200V1.5A 20W TO-220ABIRF9613 P-场效应150V1.5A 20W TO-220ABIRF9620 P-场效应200V3.5A 40W TO-220ABIRF9621 P-场效应150V3.5A 40W TO-220ABIRF9622 P-场效应200V3.0A 40W TO-220ABIRF9623 P-场效应150V3.0A 40W TO-220ABIRF9630 PMOS GDS 200V6.5A75W100/80nS0.8 功放开关IRF9631 P-场效应150V 6.5A 75W TO-220ABIRF9632 P-场效应200V 5.5A 75W TO-220ABIRF9633 P-场效应150V 5.5A 75W TO-220ABIRF9634 P-场效应250V 3.4A 33W TO-220ABIRF9640 P-FET200V11A125W15/12ns0.5ohmIRF9641 P-场效应150V 11A 125W TO-220ABIRF9642 P-场效应200V 9A 125W TO-220ABIRF9643 P-场效应150V 9A 125W TO-220ABIRF9Z30 50V 18A 74W MOSIRF9Z34 60V 18A 74W MOSIRFBC20 NMOS GDS 600V2.2A50W15/30nS4.4 功放开关IRFBC30 NMOS GDS 600V3.6A74W20/21nS2.2 功放开关IRFBC40 NMOS GDS 600V6.2A125W27/30nS1.2 功放开关IRFBE30 NMOS GDS 800V2.8A75W15/30nS3.5 功放开关IRFD113 NMOS GDS 60V0.8A1W0.8 功放开关IRFD120 NMOS GDS 100V1.3A1W70/70nS0.3 功放开关IRFD123 NMOS GDS 80V1.1A1W70/70nS0.3 功放开关IRFD9120 PMOS GDS 100V1A1W0.6 功放开关IRFI730 NMOS GDS 400V4A32W1.0 功放开关IRFI744 NMOS GDS 400V4A32W1.0 功放开关IRFP054 NMOS GDS 60V65A180W0.022 功放开关IRFP064 60V 70A 300W MOSIRFP140 NMOS GDS 100V29150W0.85 功放开关IRFP150 NMOS GDS 100V40A180W210/140nS0.55 功放开关IRFP240 NMOS GDS 200V19A150W0.18 功放开关IRFP250 NMOS GDS 200V33A180W180/120nS0.08 功放开关IRFP254 250V 23A 180W MOSIRFP260 200V 46A 280W MOSIRFP264 250V 38A 280W MOSIRFP340 NMOS GDS 400V10A150W0.55 功放开关IRFP350 NMOS GDS 400V16A180W77/71nS0.3 功放开关IRFP353 NMOS GDS 350V14A180W77/71XnS0.4 功放开关IRFP360 NMOS GDS 400V23A250W140/99nS0.2 功放开关IRFP440 NMOS GDS 500V8.1A150W0.85 功放开关IRFP450 NMOS GDS 500V14A180W66/60nS0.4 功放开关IRFP460 NMOS GDS 500V20A250W120/98nS0.27 功放开关IRFP9140 PMOS GDS 100V19A150W100/70nS0.2 功放开关IRFP9240 PMOS GDS 200V12A150W68/57nS0.5 功放开关IRFPC40 600V 6.5A 150W MOSIRFPC50 600V 10A 180W MOSIRFPC60 600V 13A 200W MOSIRFPE40 800V 5.3A 150W MOSIRFPF40 NMOS GDS 900V4.7A150W2.5 功放开关IRFPF50 900V 6.8A 180W MOSIRFPG42 NMOS GDS 1000V3.9A150W4.2 功放开关IRFPG50 1000V 6.1A 180W MOSIRFS630B NMOS GDS 200V9A38W50/40nS0.4 =IRF630 IRFS634B NMOS GDS 250V8.1A38W50/40nS0.4 =IRF634 IRFS640B NMOS GDS 200V18A43W50/40nS0.4 =IRF640 IRFS9630 PMOS GDS 200V6.5A75W100/80nS0.8 功放开关IRFU020 NMOS GDS 50V15A42W 83/39nS0.1 功放开关IRFZ34 N-FET60V30A90W110/80ns0.05ohmIRFZ44 60V 35A 150W MOSIRFZ48 60V 50A 250W MOS。

场效应管使用资料07N03L 30V 80A 150W N10N20 10A 200V N 沟道MOS管10N60 10A 600V11N80 11A 800V 156W11P06 60V 9.4A P沟道直插13N60 13A 600V N 沟道15N03L 30V 42A 83W N2N7000 60V 0.2A 0.35W N2N7000 60V 0.2A 0.35W N40N03H 30V 40A N4232 内含P沟道,N沟道MOS管各一,4532M 内含P沟道,N沟道MOS管各一,50N03L(SD 30V 47A 50W N 沟道小贴片MOS 55N03 25V 55A 103W5N90 5A 900V5P25 250V 5A6030LX 30V 52A 42W N603AL 30V 25A 60W N 沟道小贴片MOS6A60 600V 6A N6N70 700V 6A N6P25 250V 6A70L0270N06 70A 60V 125W7N60 600V 7A N,铁7N70 7A 700V85L028N25 250V ,8A ,同IRF63495N03 25V 75A 125W9916H 18V 35A 58W 小贴片，全新9N60 9A 600V9N70 9A 700VAF4502CS 内含P沟道，N沟道MOS管各一A04403 30V 6.1A 单P沟道8脚贴片A04404 30V 8.5A 单N沟道8脚贴片A04405 30V 6A 3W 单P沟道8脚贴片A04406 30V,11.5A,单N沟道,8脚贴A04407 30V 12A 3W 单P沟道,8脚贴片A04407 30V 12A 3W 单P沟道,8脚贴片A04408 30V 12A 单N沟道,8脚贴片A04409 30V 15A P沟道场效应,8脚A04410 30V 18A 单N沟道8脚贴片A04411 30V 8A 3W P沟道场效应,8脚A04413 30V 15A 3W 单P沟道,8脚贴片A04413 30V 15A 3W 单P沟道,8脚贴片A04414 30V,8.5A,3WM 单N沟道，8脚A04418 30V 11.5A N沟道8脚贴片A04422 30V 11A N 沟道8脚贴片A04423 30V 15A 3.1W 单P沟道,8脚贴A04600 内含P沟道，N沟道MOS管各一A0D405 30V，18A，P高压板MOS管贴A0D408 30V，18A，P高压板MOS管贴A0D409 60V 26/18A P 高压板MOS 管贴A0D409 60V 26/18A P 高压板MOS 管贴A0D420 30V,10A,N高压板MOS管贴A0D442 60V，38/27A，N 高压板MOS管贴A0D442 60V38/27A,N高压板MOS管贴A0D444 60V,12A,N 高压板MOS管贴A0P600 内含P,N沟道各1,30V 7.5AA0P605 内含P,N沟道各1,30V 7.5AA0P607 内含P、N沟道各1，60V 4。

IRFS460BV DSS = 500 V R DS(on) = 0.25ΩI D = 12.4 A50012.47.888±30170812.4103.51000.8- 55 to +1503001.2540----♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge♦ Extended Safe Operating Area♦ Lower Leakage Current: 10µA (Max.) @ V DS = 500V ♦ Lower R DS(ON): 0.197Ω (Typ.)$GYDQFHG 3RZHU 026)(7Thermal ResistanceJunction-to-Case Junction-to-AmbientR θJC R θJA°C/WCharacteristic Max.Units Symbol Typ.FEATURESAbsolute Maximum RatingsDrain-to-Source VoltageContinuous Drain Current (T C =25°C)Continuous Drain Current (T C =100°C)Drain Current-Pulsed (1)Gate-to-Source VoltageSingle Pulsed Avalanche Energy (2)Avalanche Current (1)Repetitive Avalanche Energy (1)Peak Diode Recovery dv/dt (3)Total Power Dissipation (T C =25°C)Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8 from case for 5-secondsCharacteristicValue Units Symbol I DM V GS E AS I AR E AR dv/dt I D P D T J , T STGT LA V mJ A mJ V/ns W W/°CA °CV DSS V TO-3PF1.Gate2. Drain3. Source321©1999 Fairchild Semiconductor CorporationRev. B元器件交易网500--2.0----------0.69----------4652152730150431822679.6----4.0100-100101000.25--5120535250657031095236----13.383940------5288.3512.4881.4----Notes;(1) Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature (2) L=20mH, I AS =12.4A, V DD =50V, R G =27Ω, Starting T J =25°C (3) I SD ≤ 22A, di/dt ≤ 300A/µs, V DD ≤ BV DSS , Starting T J =25°C (4) Pulse Test: Pulse Width = 250µs, Duty Cycle ≤ 2%(5) Essentially Independent of Operating TemperatureElectrical Characteristics (T C =25°C unless otherwise specified)Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff.Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse CharacteristicSymbol Max.Units Typ.Min.Test Condition Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output CapacitanceReverse Transfer Capacitance Turn-On Delay Time Rise TimeTurn-Off Delay Time Fall TimeTotal Gate Charge Gate-Source Charge Gate-Drain (Miller ) Chargeg fs C iss C oss C rss t d(on)t r t d(off)t f Q g Q gs Q gdBV DSS∆BV/∆T J V GS(th)R DS(on)I GSS I DSS V V/°C V nAµA ΩΩpF ns nC --------------------------V GS =0V,I D =250µA I D =250µA See Fig 7V DS =5V,I D =250µA V GS =30V V GS =-30V V DS =500VV DS =400V,T C =125°C V GS =10V,I D =6.2A (4) V DS =50V,I D =6.2A(4)V DD =250V,I D =22A,R G =5.3ΩSee Fig 13 (4) (5)V DS =400V,V GS =10V,I D =22ASee Fig 6 & Fig 12 (4) (5)Drain-to-Source Leakage Current V GS =0V,V DS =25V,f =1MHz See Fig 5Source-Drain Diode Ratings and CharacteristicsContinuous Source Current Pulsed-Source Current (1)Diode Forward Voltage (4)Reverse Recovery Time Reverse Recovery ChargeI S I SM V SD t rr Q rrCharacteristicSymbol Max.Units Typ.Min.Test Condition ----------A V ns µCIntegral reverse pn-diode in the MOSFETT J =25°C,I S =12.4A,V GS =0V T J =25°C,I F =22Adi F /dt=100A/µs (4)10-110010110101@ N o t e s :1. 250 µsP u l s e T e s t 2. T C= 25 oC V GS Top : 1 5 V1 0 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 VI D , D r a i n C u r r e n t [A ]V D S , D r a i n -S o u r c e V o l t a g e [V ]24681010-11010125 oC150 oC- 55 oC@ N o t e s :1. V GS= 0 V 2. V DS= 50 V 3. 250 µs P u l s e T e s t I D , D r a i n C u r r e n t [A ]V G S , G a t e -S o u r c e V o l t a g e [V ]1530456075900.000.150.300.450.60@ N o t e : T J= 25 oC V GS= 20 V V GS= 10 V R D S (o n ) , [Ω]D r a i n -S o u r c e O n -R e s i s t a n c eI D, D r a i n C u r r e n t [A ]0.40.60.81.01.21.41.61.82.02.210-1100101150 oC25 oC@ N o t e s :1. V GS = 0 V2. 250 µsP u l s e T e s t I D R , R e v e r s e D r a i n C u r r e n t [A ]V S D , S o u r c e -D r a i n V o l t a g e [V ]101010200040006000C iss = C gs + C gd ( C ds = s h o r t e d )C oss = C ds + C gd C rss = C gd@ N o t e s :1. V GS = 0 V2. f = 1 M H zC rssC oss C issC a p a c i t a n c e [p F ]V D S , D r a i n -S o u r c e V o l t a g e [V ]50100150200510V DS= 400 V V DS = 250 V V DS = 100 V @ N o t e s : I D= 22.0 A V G S , G a t e -S o u r c e V o l t a g e [V ]Q G , T o t a l G a t e C h a r g e [n C ]Fig 1. Output CharacteristicsFig 2. Transfer CharacteristicsFig 6. Gate Charge vs. Gate-Source VoltageFig 5. Capacitance vs. Drain-Source VoltageFig 4. Source-Drain Diode Forward VoltageFig 3. On-Resistance vs. Drain Current-75-50-252550751001251501750.80.91.01.11.2@ N o t e s :1. V GS = 0 V2. I D= 250 µA B V D S S , (N o r m a l i z e d )D r a i n -S o u r c e B r e a k d o w n V o l t a g eT J , J u n c t i o n T e m p e r a t u r e [oC ]-75-50-252550751001251501750.00.51.01.52.02.53.0@ N o t e s :1. V GS = 10 V2. I D= 11.0 A R D S (o n ) , (N o r m a l i z e d )D r a i n -S o u r c e O n -R e s i s t a n c eT J , J u n c t i o n T e m p e r a t u r e [oC ]2550751001251503691215I D , D r a i n C u r r e n t [A ]T c , C a s e T e m p e r a t u r e [o C ]10-510-410-310-210-110010110-210-1100single pulse0.20.10.010.020.05D=0.5@ Notes :1. Z θJC (t)=1.25 o C/W Max.2. Duty Factor, D=t 1/t 23. T JM -T C =P DM *Z θJC (t)Z θJ C (t ) , T h e r m a l R e s p o n s et 1 , Square Wave Pulse Duration [sec]1010110210310-1100101102D C10 µs100 µs1 m s 10 m s @ N o t e s :1. T C =25 oC 2. T J = 150 o C 3. S i n g l e P u l s eO p e r a t i o n i n T h i s A r e ai s L i m i t e d b y R DS(on)I D , D r a i n C u r r e n t [A ]V D S , D r a i n -S o u r c e V o l t a g e [V ]Fig 7. Breakdown Voltage vs. TemperatureFig 8. On-Resistance vs. TemperatureFig 11. Thermal ResponseFig 10. Max. Drain Current vs. Case TemperatureFig 9. Max. Safe Operating AreaP DMt 1t 2Fig 12. Gate Charge Test Circuit & WaveformFig 13. Resistive Switching Test Circuit & WaveformsFig 14. Unclamped Inductive Switching Test Circuit & WaveformsE AS =L L I AS 2----21--------------------BV DSS -- V DDBV DSSV inV out10%90%t d(on)t r t ont offt d(off)t fChargeV GS10VQ gQ gs Q gdVary t p to obtain required peak I D10VV DDCL LV DSI DR Gt pDUTBV DSSt pV DDI ASV DS (t)I D (t)TimeV DD( 0.5 rated V DS )10VV out V inR LDUTR G3mAV GSCurrent Sampling (I G )ResistorCurrent Sampling (I D )ResistorDUTV DS300nF50k Ω200nF12VSame Typeas DUTCurrent RegulatorR 1R 2Fig 15. Peak Diode Recovery dv/dt Test Circuit & WaveformsDUTV DS +--LI SDriver V GSR GSame Type as DUTV GSdv/dt controlled by R GI S controlled by Duty Factor DV DD10VV GS ( Driver )I S ( DUT )V DS ( DUT )V DDBody DiodeForward Voltage DropV fI FM , Body Diode Forward CurrentBody Diode Reverse CurrentI RMBody Diode Recovery dv/dtdi/dtD =Gate Pulse Width Gate Pulse Period--------------------------TRADEMARKSACEx™CoolFET™CROSSVOLT™E 2CMOS TM FACT™FACT Quiet Series™FAST ®FASTr™GTO™HiSeC™The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.LIFE SUPPORT POLICYFAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORTDEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROV AL OF FAIRCHILD SEMICONDUCTOR CORPORA TION.As used herein:ISOPLANAR™MICROWIRE™POP™PowerTrench™QS™Quiet Series™SuperSOT™-3SuperSOT™-6SuperSOT™-8TinyLogic™1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant intothe body, or (b) support or sustain life, or (c) whosefailure to perform when properly used in accordancewith instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.2. A critical component is any component of a lifesupport device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.PRODUCT STATUS DEFINITIONS Definition of TermsDatasheet Identification Product Status Definition Advance InformationPreliminary No Identification Needed Obsolete This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.This datasheet contains preliminary data, andsupplementary data will be published at a later date.Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor.The datasheet is printed for reference information only.Formative or In DesignFirst ProductionFull ProductionNot In ProductionDISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY , FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.元器件交易网。

This document was generated on 08/20/2012PLEASE CHECK FOR LATEST PART INFORMATIONPart Number:44428-0406Status:ActiveOverview:Micro-Fit 3.0™ ConnectorsDescription:3.00mm Pitch Micro-Fit 3.0 BMI™ Header, Surface Mount Compatible, Dual Row, Right Angle, without Snap-in Plastic Peg PCB Lock, 4 Circuits, 0.76µm Gold (Au) Selective PlatingDocuments:3D ModelRoHS Certificate of Compliance (PDF)Drawing (PDF)Product Literature (PDF)Product Specification PS-44300-001 (PDF)Agency CertificationCSA LR19980TUV R72081037ULE29179GeneralProduct Family PCB Headers Series44428Application Board-to-Board, Power, Wire-to-BoardCommentsHigh Temperature|Square Pin|Solder Type|Polarized to Mating PartOverviewMicro-Fit 3.0™ Connectors Product Literature Order No 987650-5984Product Name Micro-Fit 3.0 BMI™UPC756054345894PhysicalBreakawayNo Circuits (Loaded)4Circuits (maximum)4Color - ResinBlack Durability (mating cycles max)30First Mate / Last Break No Flammability94V-0Glow-Wire Compliant No Guide to Mating Part No Keying to Mating Part None Lock to Mating Part Yes Material - MetalBrass Material - Plating MatingGold Material - Plating Termination TinMaterial - Resin High Temperature Thermoplastic Net Weight1.394/g Number of Rows 2Orientation Right Angle PC Tail Length 3.50mm PCB Locator Yes PCB RetentionYes PCB Thickness - Recommended 1.60mm Packaging TypeTray Pitch - Mating Interface 3.00mm Plating min - Mating0.762µm Plating min - Termination 2.540µm Polarized to PCBYesSeriesimage - Reference onlyEU RoHSChina RoHSELV and RoHS Compliant REACH SVHCContains SVHC: No Low-Halogen Status Not Low-HalogenNeed more information on product environmental compliance?Email productcompliance@For a multiple part number RoHS Certificate of Compliance, click herePlease visit the Contact Us section for any non-product compliance questions.Search Parts in this Series 44428SeriesMates With44133 , 44764 , 44769Shrouded FullyStackable NoSurface Mount Compatible (SMC)YesTemperature Range - Operating-40°C to +105°CTermination Interface: Style Through HoleElectricalCurrent - Maximum per Contact5AVoltage - Maximum250VSolder Process DataDuration at Max. Process Temperature (seconds)5Lead-free Process Capability Wave Capable (TH only)Max. Cycles at Max. Process Temperature1Process Temperature max. C260Material InfoReference - Drawing NumbersProduct Specification PS-44300-001, RPS-44300-001Sales Drawing SD-44428-001This document was generated on 08/20/2012PLEASE CHECK FOR LATEST PART INFORMATION分销商库存信息: MOLEX 0444280406。

protel dxp 2004 元件库中的常用元件初学protel DXP 碰到最多的问题就是：不知道元件放在哪个库中。

这里我收集了DXP2004常用元件库下常见的元件。

使用时，只需在libary中选择相应的元件库后，输入英文的前几个字母就可看到相应的元件了。

通过添加通配符*，可以扩大选择范围。

下面这些库元件都是DXP 2004自带的不用下载。

########### DXP2004下Miscellaneous Devices.Intlib元件库中常用元件有：电阻系列（res*）排组（res pack*）电感（inductor*）电容（cap*，capacitor*）二极管系列（diode*，d*）三极管系列（npn*，pnp*，mos*，MOSFET*，MESFET*，jfet*，IGBT*）运算放大器系列（op*）继电器（relay*）8位数码显示管（dpy*）电桥（bri*bridge）光电耦合器( opto* ，optoisolator )光电二极管、三极管（photo*）模数转换、数模转换器（adc-8，dac-8）晶振（xtal）电源（battery）喇叭（speaker）麦克风（mic*）小灯泡（lamp*）响铃（bell）天线（antenna）保险丝（fuse*）开关系列（sw*）跳线（jumper*）变压器系列（trans*）（tube*）（scr）（neon）（buzzer）（coax）晶振（crystal oscillator）的元件库名称是Miscellaneous Devices.Intlib, 在search栏中输入*soc 即可。

########### DXP2004下Miscellaneous connectors.Intlib元件库中常用元件有：(con*，connector*)(header*)(MHDR*)定时器NE555P 在库TI analog timer circit.Intlib中电阻AXIAL无极性电容RAD电解电容RB-电位器VR二极管DIODE三极管TO电源稳压块78和79系列TO-126H和TO-126V场效应管和三极管一样整流桥D-44 D-37 D-46单排多针插座CON SIP双列直插元件DIP晶振XTAL1电阻:RES1,RES2,RES3,RES4;封装属性为axial系列无极性电容:cap;封装属性为RAD-0.1到rad-0.4电解电容:electroi;封装属性为rb.2/.4到rb.5/1.0电位器:pot1,pot2;封装属性为vr-1到vr-5二极管:封装属性为diode-0.4(小功率)diode-0.7(大功率)三极管:常见的封装属性为to-18(普通三极管)to-22(大功率三极管)to-3(大功率达林顿管)电源稳压块有78和79系列;78系列如7805,7812,7820等79系列有7905,7912,7920等常见的封装属性有to126h和to126v整流桥:BRIDGE1,BRIDGE2: 封装属性为D系列(D-44,D-37,D-46)电阻: AXIAL0.3-AXIAL0.7 其中0.4-0.7指电阻的长度,一般用AXIAL0.4 瓷片电容:RAD0.1-RAD0.3. 其中0.1-0.3指电容大小,一般用RAD0.1电解电容:RB.1/.2-RB.4/.8 其中.1/.2-.4/.8指电容大小.一般<100uF用RB.1/.2,100uF-470uF用RB.2/.4,>470uF用RB.3/.6二极管: DIODE0.4-DIODE0.7 其中0.4-0.7指二极管长短,一般用DIODE0.4 发光二极管:RB.1/.2集成块: DIP8-DIP40, 其中8-40指有多少脚,8脚的就是DIP8贴片电阻0603表示的是封装尺寸与具体阻值没有关系但封装尺寸与功率有关通常来说0201 1/20W0402 1/16W0603 1/10W0805 1/8W1206 1/4W电容电阻外形尺寸与封装的对应关系是:0402=1.0x0.50603=1.6x0.80805=2.0x1.21206=3.2x1.61210=3.2x2.51812=4.5x3.22225=5.6x6.5关于零件封装我们在前面说过,除了DEVICE.LIB库中的元件外,其它库的元件都已经有了固定的元件封装,这是因为这个库中的元件都有多种形式:以晶体管为例说明一下:晶体管是我们常用的的元件之一,在DEVICE.LIB库中,简简单单的只有NPN与PNP之分,但实际上,如果它是NPN的2N3055那它有可能是铁壳子的TO—3,如果它是NPN 的2N3054,则有可能是铁壳的TO-66或TO-5,而学用的CS9013,有TO-92A,TO-92B,还有TO-5,TO-46,TO-52等等,千变万化.还有一个就是电阻,在DEVICE库中,它也是简单地把它们称为RES1和RES2,不管它是100Ω还是470KΩ都一样,对电路板而言,它与欧姆数根本不相关,完全是按该电阻的功率数来决定的我们选用的1/4W和甚至1/2W的电阻,都可以用AXIAL0.3元件封装,而功率数大一点的话,可用AXIAL0.4,AXIAL0.5等等.现将常用的元件封装整理如下:电阻类及无极性双端元件AXIAL0.3-AXIAL1.0无极性电容RAD0.1-RAD0.4有极性电容RB.2/.4-RB.5/1.0二极管DIODE0.4及DIODE0.7石英晶体振荡器XTAL1晶体管、FET、UJT TO-xxx(TO-3,TO-5)可变电阻(POT1、POT2) VR1-VR5当然,我们也可以打开C:\Client98\PCB98\library\advpcb.lib库来查找所用零件的对应封装.这些常用的元件封装,大家最好能把它背下来,这些元件封装,大家可以把它拆分成两部分来记如电阻AXIAL0.3可拆成AXIAL和0.3,AXIAL翻译成中文就是轴状的,0.3则是该电阻在印刷电路板上的焊盘间的距离也就是300mil(因为在电机领域里,是以英制单位为主的.同样的,对于无极性的电容,RAD0.1-RAD0.4也是一样;对有极性的电容如电解电容,其封装为RB.2/.4,RB.3/.6等,其中“.2”为焊盘间距,“.4”为电容圆筒的外径.对于晶体管,那就直接看它的外形及功率,大功率的晶体管,就用TO—3,中功率的晶体管,如果是扁平的,就用TO-220,如果是金属壳的,就用TO-66,小功率的晶体管,就用TO-5,TO-46,TO-92A等都可以,反正它的管脚也长,弯一下也可以.对于常用的集成IC电路,有DIPxx,就是双列直插的元件封装,DIP8就是双排,每排有4个引脚,两排间距离是300mil,焊盘间的距离是100mil.SIPxx就是单排的封装.等等.值得我们注意的是晶体管与可变电阻,它们的包装才是最令人头痛的,同样的包装,其管脚可不一定一样.例如,对于TO-92B之类的包装,通常是1脚为E(发射极),而2脚有可能是B极(基极),也可能是C(集电极);同样的,3脚有可能是C,也有可能是B,具体是那个,只有拿到了元件才能确定.因此,电路软件不敢硬性定义焊盘名称(管脚名称),同样的,场效应管,MOS管也可以用跟晶体管一样的封装,它可以通用于三个引脚的元件.Q1-B,在PCB里,加载这种网络表的时候,就会找不到节点(对不上).在可变电阻上也同样会出现类似的问题;在原理图中,可变电阻的管脚分别为1、W、及2,所产生的网络表,就是1、2和W,在PCB电路板中,焊盘就是1,2,3.当电路中有这两种元件时,就要修改PCB与SCH之间的差异最快的方法是在产生网络表后,直接在网络表中,将晶体管管脚改为1,2,3;将可变电阻的改成与电路板元件外形一样的1,2,3即可.protel99se常用元件封装电阻：RES1，RES2，RES3，RES4；封装属性为axial系列无极性电容：cap;封装属性为RAD-0.1到rad-0.4电解电容：electroi;封装属性为rb.2/.4到rb.5/1.0电位器：pot1,pot2；封装属性为vr-1到vr-5二极管：封装属性为diode-0.4(小功率)diode-0.7(大功率)三极管：常见的封装属性为to-18（普通三极管）to-22(大功率三极管)to-3(大功率达林顿管)电源稳压块有78和79系列；78系列如7805，7812，7820等79系列有7905，7912，7920等常见的封装属性有to126h和to126v整流桥：BRIDGE1,BRIDGE2: 封装属性为D系列（D-44，D-37，D-46）电阻：AXIAL0.3-AXIAL0.7其中0.4-0.7指电阻的长度，一般用AXIAL0.4 瓷片电容：RAD0.1-RAD0.3。