BFG520

Fig.1 SOT143B.
handbook, 2 columns 3
4
BFG520/XR (Fig.2) Code: N48
2 Top view 1
MSB035
Fig.2 SOT143R.
QUICK REFERENCE DATA SYMBOL VCBO VCEO Ic Ptot hFE Cre fT GUM PARAMETER collector-base voltage DC collector current total power dissipation DC current gain feedback capacitance transition frequency maximum unilateral power gain up to Ts = 88 °C; note 1 IC = 20 mA; VCE = 6 V; Tj = 25 °C IC = 0; VCB = 6 V; f = 1 MHz IC = 20 mA; VCE = 6 V; f = 1 GHz; Tamb = 25 °C IC = 20 mA; VCE = 6 V; f = 900 MHz; Tamb = 25 °C IC = 20 mA; VCE = 6 V; f = 2 GHz; Tamb = 25 °C S212 F insertion power gain noise figure IC = 20 mA; VCE = 6 V; f = 900 MHz; Tamb = 25 °C Γs = Γopt ; Ic = 5 mA; VCE = 6 V; f = 900 MHz; Tamb = 25 °C Γs = Γopt ; IC = 20 mA; VCE = 6 V; f = 900 MHz; Tamb = 25 °C Γs = Γopt ; IC = 5 mA; VCE = 8 V; f = 2 GHz; Tamb = 25 °C September 1995 2 collector-emitter voltage open base CONDITIONS open emitter − − − − 60 − − − − 17 − − − MIN. − − − − 120 0.3 9 19 13 18 1.1 1.6 1.9 TYP. MAX. 20 15 70 300 250 − − − − − 1.6 2.1 − pF GHz dB dB dB dB dB dB UNIT V V mA mW
250
MRA671
Ptot (mW) 300
hFE 200
150 200 100 100 50
0 0 50 100 150 Ts (oC) 200
0 10−2
10−1
1
10
IC (mA)
102
VCE = 6 V; Tj = 25 Fra Baidu bibliotekC.
Fig.3 Power derating curve.
September 1995
4
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFG520; BFG520/X; BFG520/XR
handbook, halfpage
400
MRA670-1
handbook, halfpage
PL1 ITO Vo d2 Notes
output power at 1 dB gain compression third order intercept point output voltage second order intermodulation distortion
IC = 20 mA; VCE = 6 V; RL = 50 Ω; f = 900 MHz; Tamb = 25 °C note 2 note 3 IC = 20 mA; VCE = 6 V; Vo = 75 mV; Tamb = 25 °C; f(p+q) = 810 MHz
MIN. − 60 − − − − − − 17 − − − − − − − −
TYP. 120 1 0.6 0.3 9 19 13 18 1.1 1.6 1.9 17 26 275 −50
MAX. 50 250 − − − − − − − 1.6 2.1 − − − − −
UNIT nA pF pF pF GHz dB dB dB dB dB dB dBm dBm mV dB
September 1995
3
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL ICBO hFE Ce Cc Cre fT GUM PARAMETER collector cut-off current DC current gain emitter capacitance collector capacitance feedback capacitance transition frequency maximum unilateral power gain (note 1)
S212 F
insertion power gain noise figure
IC = 20 mA; VCE = 6 V; f = 900 MHz; Tamb = 25 °C Γs = Γopt; IC = 5 mA; VCE = 6 V; f = 900 MHz; Tamb = 25 °C Γs = Γopt; IC = 20 mA; VCE = 6 V; f = 900 MHz; Tamb = 25 °C Γs = Γopt; IC = 5 mA; VCE = 6 V; f = 2 GHz; Tamb = 25 °C
BFG520; BFG520/X; BFG520/XR
CONDITIONS open emitter open base open collector up to Ts = 88 °C; note 1 − − − − −
MIN.
MAX. 20 15 2.5 70 300 150 175 V V V
UNIT
BFG520; BFG520/X; BFG520/XR
CONDITIONS IE = 0; VCB = 6 V IC = 20 mA; VCE = 6 V IC = ic = 0; VEB = 0.5 V; f = 1 MHz IE = ie = 0; VCB = 6 V; f = 1 MHz IC = 0; VCB = 6 V; f = 1 MHz IC = 20 mA; VCE = 6 V; f = 1 GHz; Tamb = 25 °C IC = 20 mA; VCE = 6 V; f = 900 MHz; Tamb = 25 °C IC = 20 mA; VCE = 6 V; f = 2 GHz; Tamb = 25 °C
BFG520; BFG520/X; BFG520/XR
DESCRIPTION collector base emitter emitter
fpage
4
3
BFG520 (Fig.1) Code: N36
1 Top view 2
MSB014
BFG520/X (Fig.1) Code: N42 collector emitter base emitter collector emitter base emitter
1. GUM is the maximum unilateral power gain, assuming S12 is zero and 2 S 21 - dB. G UM = 10 log ------------------------------------------------------------2 2 1 – S 11 1 – S 22 2. IC = 20 mA; VCE = 6 V; RL = 50 Ω; f = 900 MHz; Tamb = 25 °C; fp = 900 MHz; fq = 902 MHz; measured at f(2p−q) = 898 MHz and f(2q−p) = 904 MHz. 3. dim = −60 dB (DIN 45004B); Vp = Vo; Vq = Vo −6 dB; Vr = Vo −6 dB; fp = 795.25 MHz; fq = 803.25 MHz; fr = 805.25 MHz; measured at f(p+q−r) = 793.25 MHz
DISCRETE SEMICONDUCTORS
DATA SHEET
BFG520; BFG520/X; BFG520/XR NPN 9 GHz wideband transistor
Product specification File under Discrete Semiconductors, SC14 September 1995
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL VCBO VCEO VEBO IC Ptot Tstg Tj PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage DC collector current total power dissipation storage temperature junction temperature
mA mW °C °C
−65 −
THERMAL RESISTANCE SYMBOL Rth j-s Note 1. Ts is the temperature at the soldering point of the collector tab. PARAMETER thermal resistance from junction to soldering point CONDITIONS up to Ts = 88 °C; note 1 THERMAL RESISTANCE 290 K/W
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. DESCRIPTION NPN silicon planar epitaxial transistors, intended for applications in the RF frontend in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, pagers and satellite TV tuners (SATV) and repeater amplifiers in fibre-optic systems. The transistors are encapsulated in 4-pin, dual-emitter plastic SOT143 and SOT143R envelopes. PINNING PIN 1 2 3 4 1 2 3 4 1 2 3 4