A 5.9-GHz Voltage-Controlled Ring Oscillator in 0.18-m CMOS
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Technical dataBasic dataSeries MSI-SR-2H21Application Evaluation unit for two-hand control devicesCharacteristic parametersSIL 3 ,IEC 61508SILCL 3 ,IEC/EN 62061Performance Level (PL) e ,EN ISO 13849-1PFH D0.00000003 per hourPFH D3E-08 per hourMission time T M20 years ,EN ISO 13849-1Category 4 ,EN ISO 13849Electrical dataSupply circuitNominal voltage U N24 V AC/DCNominal frequency50 ... 60 HzRated control supply voltage U S at AC 60 Hz20.4 VRated control supply voltage U S at AC 50 Hz26.4 VMax. rated control supply voltage at AC 50 Hz26.4 VMin. rated control supply voltage U S at AC 50 Hz20.4 VMin. rated control supply voltage U S at DC20.4 VMax. rated control supply voltage at DC26.4 VMin. rated control supply voltage at DC20.4 VRated power DC 2.4 WGalvanic isolation between supply and control circuit Yes (when U N≥ AC 115-230 V, AC 230 V) Output circuitNumber of outputs, safety-oriented, undelayed, contact-based 2 Piece(s)Number of outputs, signaling function, undelayed, contact-based 1 Piece(s)Release current paths NOSignaling current paths NCContact material Ag alloy, gold-platedUsage category AC-15 (NO contact)Ue 230V, Ie 3AUsage category DC-13 (NO contact)Ue 24V, Ie 2,5AShort circuit protection (NO contact)gG class safety fuse 6A, melting integral Nominal switching voltage, release current paths AC230 VMax. thermal continuous current I th, release current paths 6 AMax. thermal continuous current I th, signaling current paths 2 AMax. total current I² of all current paths9 A²Mechanical life time100,000,000 switching cyclesControl circuitExecuting the switching function of the inputs ChangeoverNominal output voltage DC24 VInput current at the control inputs (safety circuit/reset circuit)60 mAMax. peak current at the control inputs (safety circuit/reset circuit)1,000 mAMax. cable resistance, per channel≤ (5 + (1.333 x U B/ U N- 1) x 200) ΩResponse time (automatic start t A2)40 msResponse time (manual start t A1)40 msRelease time t R50 msSychronous time monitoring t S500 msRecovery time t W250 msConnectionNumber of connections 1 Piece(s)Connection 1Type of connection TerminalFunction Signal INSignal OUTVoltage supplyType of terminal Screw terminalNo. of pins16 -pinCable propertiesConnection cross sections 1 x 0.2 to 2.5 mm², wire1 x 0.2 to 2.5 mm², wire1 x 0.25 to 2.5 mm², wire with wire-end sleeve2 x 0.2 to 1.0 mm², wire2 x 0.2 to 1.0 mm², wire2 x 0.25 to 1.0 mm², wire with wire-end sleeveMechanical dataDimension (W x H x L)22.5 mm x96.5 mm x114 mmNet weight200 gHousing color GrayType of fastening Snap-on mountingCertificationsCertifications c UL USTÜV RheinlandClassificationCustoms tariff number85364900*********27371821*********27371821ETIM 5.0EC001452ETIM 6.0EC001452Dimensioned drawingsAll dimensions in millimetersElectrical connectionConnection 1Type of connection Terminal Function Signal INSignal OUTVoltage supply Type of terminal Screw terminal No. of pins16 -pinTerminal Assignment13Release current path 1 (NO contact)14Release current path 1 (NO contact)23Release current path 2 (NO contact)24Release current path 2 (NO contact)31Signaling current path (NC contact)32Signaling current path (NC contact)A1+24VA2GNDY1Feedback path (NC contact)Terminal AssignmentY2Feedback path (NC contact)Y11Control circuit 1 of two-hand buttonY12Control circuit 1 of two-hand buttonY14Control circuit 1 of two-hand buttonY21Control circuit 2 of two-hand buttonY22Control circuit 2 of two-hand buttonY24Control circuit 2 of two-hand buttonCircuit diagramsNotesObserve intended use!•The product may only be put into operation by competent persons.•Only use the product in accordance with its intended use.。
MM5ZxxxST1G Series, SZMM5ZxxxST1G Series Zener Voltage Regulators 500 mW SOD−523 Surface MountThis series of Zener diodes is packaged in a SOD−523 surface mount package. They are designed to provide voltage regulation protection and are especially attractive in situations where space is at a premium. They are well suited for applications such as cellular phones, hand held portables, and high density PC boards. Specification Features•Standard Zener Breakdown V oltage Range −2.4 V to 18 V •Steady State Power Rating of 500 mW•Small Body Outline Dimensions:0.047″ x 0.032″ (1.20 mm x 0.80 mm)•Low Body Height: 0.028″ (0.7 mm)•ESD Rating of Class 3 (> 16 kV) per Human Body Model •Tight Tolerance V Z•SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable•These Devices are Pb−Free and are RoHS Compliant*Mechanical CharacteristicsCASE:V oid-free, transfer-molded, thermosetting plasticEpoxy Meets UL 94, V−0LEAD FINISH: 100% Matte Sn (Tin)MOUNTING POSITION:AnyQUALIFIED MAX REFLOW TEMPERATURE: 260°CDevice Meets MSL 1 RequirementsMAXIMUM RATINGSRating Symbol Max UnitTotal Device Dissipation FR−4 Board, (Note 1) @ T A = 25°CDerate above 25°C P D5004.0mWmW/°CThermal Resistance from Junction−to−Ambient (Note 1)R q JA250°C/WJunction and Storage Temperature Range T J, T stg−65 to+150°CStresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.1.FR−4 printed circuit board, single−sided copper, mounting pad 1 cm2.*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.Device Package Shipping†ORDERING INFORMATIONCathode AnodeSee specific marking information in the device marking column of the Electrical Characteristics table on page 2 of this data sheet.DEVICE MARKING INFORMATIONSOD−523CASE 502STYLE 1MARKING DIAGRAMXX= Specific Device CodeM Date Code*G= Pb−Free Package(Note: Microdot may be in either location)*Date Code orientation may vary dependingupon manufacturing location.MM5ZxxxST1G SOD−523(Pb−Free)3,000 /Tape & Reel†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our T ape and Reel Packaging Specifications Brochure, BRD8011/D.SOD−523(Pb−Free)SZMM5ZxxxST1G3,000 /Tape & ReelSOD−523(Pb−Free)SZMM5ZxxxST5G8,000 /Tape & ReelELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted,V F = 0.9 V Max. @ I F = 10 mA for all types) Symbol Parameter V Z Reverse Zener Voltage @ I ZTI ZT Reverse CurrentZZT Maximum Zener Impedance @ I ZTI ZK Reverse CurrentZ ZK Maximum Zener Impedance @ I ZKI R Reverse Leakage Current @ V RV R Reverse VoltageI F Forward CurrentV F Forward Voltage @ I FQ V Z Maximum Temperature Coefficient of V Z C Max. Capacitance @V R = 0 and f = 1 MHzV Figure 1. Zener Voltage RegulatorELECTRICAL CHARACTERISTICS (V F = 0.9 Max @ I F = 10 mA for all types)Device*DeviceMarkingTestCurrentIzt mAZener VoltageVZZ ZK I Z= 1.0mA WMaxZ ZTI Z = IZT@ 10%Mod WMaxMaxIR @ VRd VZ/dt (mV/k)@ I ZT1 = 5 mA C pF Max @V R = 0f = 1 MHzMin Max m A V Min MaxMM5Z2V4ST1G T2 5.0 2.43 2.631000100120 1.0−3.50450MM5Z2V7ST1G T3 5.0 2.67 2.911000100100 1.0−3.50450MM5Z3V3ST1G T5 5.0 3.32 3.53100095 5.0 1.0−3.50450MM5Z3V6ST1G T6 5.0 3.60 3.85100090 5.0 1.0−3.50450MM5Z3V9ST1G T7 5.0 3.89 4.16100090 3.0 1.0−3.5−2.5450MM5Z4V3ST1G T8 5.0 4.17 4.43100090 3.0 1.0−3.50450MM5Z4V7ST1G/T5G T9 5.0 4.55 4.7580080 3.0 2.0−3.50.2260MM5Z5V1ST1G TA 5.0 4.98 5.250060 2.0 2.0−2.7 1.2225MM5Z5V6ST1G TC 5.0 5.49 5.7320040 1.0 2.0−2.0 2.5200MM5Z6V2ST1G TE 5.0 6.06 6.3310010 3.0 4.00.4 3.7185MM5Z6V8ST1G TF 5.0 6.65 6.9316015 2.0 4.0 1.2 4.5155MM5Z7V5ST1G TG 5.07.287.616015 1.0 5.0 2.5 5.3140MM5Z8V2ST1G TH 5.08.028.36160150.7 5.0 3.2 6.2135MM5Z9V1ST1G TK 5.08.859.23160150.5 6.0 3.87.0130MM5Z12VST1G TN 5.011.7412.2480250.18.0 6.010130MM5Z16VST1G TU 5.015.8516.5180400.0511.210.414105MM5Z18VST1G TW 5.017.5618.3580450.0512.612.416100 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.*Include SZ-prefix devices where applicable.TYPICAL CHARACTERISTICSTEMPERATURE (°C)25010040200P O W E R D I S S I P A T I O N (%)50751001251508060Figure 2. Steady State Power DeratingPACKAGE DIMENSIONSSOD −523CASE 502ISSUE ENOTES:1.DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.2.CONTROLLING DIMENSION: MILLIMETERS.3.MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL.4.DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PRO-TRUSIONS, OR GATE BURRS.DIM MIN NOM MAX MILLIMETERS D 1.10 1.20 1.30E 0.700.800.90A 0.500.600.70b 0.250.300.35c 0.070.140.20L 0.30 REF H 1.50 1.60 1.70*For additional information on our Pb −Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.SOLDERING FOOTPRINT*E RECOMMENDEDSIDE VIEW2XBOTTOM VIEWL2L2X2XL20.150.200.25STYLE 1:PIN 1.CATHODE (POLARITY BAND)2.ANODEON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.PUBLICATION ORDERING INFORMATION。
OX-4011-EAE-0580-20M000OCXONominal frequency (f0)20MHzFeaturesApplication•SC Cut Crystal •hermetically sealed •SMD•Wander generation (Standard /ZLAN Group)MTIE &TDEV compliant with:-G.812(zO1)-G.8273.4(zO4;zO5)-G.8263(zO6);•S3E compliant according GR1244Performance Specificationsall units in mmTP: max 260°C (@ solder joint, customer board level)T p: max: 10…30 secAdditional Information:This SMD oscillator has been designed for pick and place reflow solderingSMD oscillators must be on the top side of the PCB during the reflow process.Notes:Unless otherwise stated all values are valid after warm-up time and refer to typical conditions for supply voltage, frequency control voltage,load,temperature(25◦C).Subject to technical modification.USA:Europe:100Watts Street LandstrasseMt Holly Springs,P A1706574924NeckarbischofsheimGermanyTel:1.717.486.3411T el:+49(0)7268.801.0Fax:1.717.486.5920Fax:+49(0)7268.801.281Information contained in this publication regarding device applications and the like is provided only foryour convenience and may be superseded by updates.It is your reasonability to ensure that yourapplication meets with your specifications.MICROCHIP MAKES NO REPRESENT A TION ORWARRANTIES OF ANY KIND WHETHER EXPRESS OR IMPLIED,WRITTEN OR ORAL,ST ATUTORYOR OTHERWISE,RELA TED TO THE INFORMA TION INCLUDING,BUT NOT LIMITED TO ITSCONDITION,QUALITY,PERFORMANCE,MERCHANT ABILITY OR FITNESS FOR PURPOSE.Microchip disclaims all liability arising from this information and its e of Microchip devices in lifesupport and/or safety applications is entirely at the buyer’s risk,and the buyer agrees to defend,indemnify and hold harmless Microchip from any and all damages,claims,suits,or expenses resultingfrom such use.No licenses are conveyed,implicitly,or otherwise,under any Microchip intellectualproperty rights unless otherwise statedTrademarksThe Microchip and Vectron names and logos are registered trademarks of Microchip TechnologyIncorporated in the U.S.A.and other countries.List of appendicesAppendix_OX-4011-EAE-0580-20M000_Jitter II Appendix_OX-4011-EAE-0580-20M000_OX-401-9016-III 20M000_OX-4011-EAE-0580-10M000_MTIE_TDEVAppendix_OX-221-OX-40x_Power_on_time XIAppendix handling&processing note XIIThe following MTIE TDEV plots were generated from data collected on production devices over the course of a year and represent typical performance. Frequency is measured every second and converted to phase using Microchip’s golden standard TimeMonitor soft ware. Filtering is applied to the data per standards requirements, and limits where applicable, are shown in red. Additional information on standards and oscillatorrecommendations can be found in ZLAN-830 and ZLAN-3467 (formerly ZLAN-442 and ZLAN-68).Const. Temp ±1°K; slope 0,1°C/min, range 21..23°C Const. Temp ±5°F; slope 0,1°C/min,range 19.22..24.78°C Trapezoid_Pattern_slope 0,5°C/min,range +2,5...42,5°C Triangle-Pattern_slope 0,2°C/min,range -40...85°CConst. Temp ±1°K; slope 0,1°C/min, range 21..23°C Const. Temp ±5°F; slope 0,1°C/min,range 19.22..24.78°C Trapezoid_Pattern_slope 0,5°C/min,range +2,5...42,5°C Triangle-Pattern_slope 0,2°C/min,range -40...85°CConst. Temp ±1°K; slope 0,1°C/min, range 21..23°C Const. Temp ±5°F; slope 0,1°C/min,range 19.22..24.78°C Trapezoid_Pattern_slope 0,5°C/min,range +2,5...42,5°C Triangle-Pattern_slope 0,2°C/min,range -40...85°CConst. Temp ±1°K; slope 0,1°C/min, range 21..23°C Const. Temp ±5°F; slope 0,1°C/min,range 19.22..24.78°C Trapezoid_Pattern_slope 0,5°C/min,range +2,5...42,5°C Triangle-Pattern_slope 0,2°C/min,range -40...85°CConst. Temp ±1°K; slope 0,1, range 21..23°C Const. Temp ±5°F; slope 0,1,range 19.22..24.78°C Trapezoid_Pattern_slope 0,5,range +2,5...42,5°C Triangle-Pattern_slope 0,2,range -40...85°CConst. Temp ±1°K; slope 0,1, range 21..23°C Const. Temp ±5°F; slope 0,1,range 19.22..24.78°C Trapezoid_Pattern_slope 0,5,range +2,5...42,5°C Triangle-Pattern_slope 0,2,range -40...85°CConst. Temp ±1°K; slope 0,1, range 21..23°C Const. Temp ±5°F; slope 0,1,range 19.22..24.78°C Trapezoid_Pattern_slope 0,5,range +2,5...42,5°C Triangle-Pattern_slope 0,2,range -40...85°CConst. Temp ±1°K; slope 0,1, range 21..23°C Const. Temp ±5°F; slope 0,1,range 19.22..24.78°C Trapezoid_Pattern_slope 0,5,range +2,5...42,5°C Triangle-Pattern_slope 0,2,range -40...85°CApplicationUnless otherwise noted, the products listed in the catalogue are designed for use with ordinary electrical devices, such as stationary and portable communication, control, measurement equipment etc.. They are designed and manufactured to meet a high degree of reliability (lifetime more than 15 years) under normal …commercial“ application conditions. Products dedicated for automotive and H-Rel applications are specifically identified for these applications. If you intend to use these …commercial“ products for airborne, space or critical transport applications, nuclear power control, medical devices with a direct impact on human life, or other applications which require an exceptionally high degree of reliability or safety, please contact the manufacturer.Electrostatic SensitivityCrystal oscillators are electrostatic sensitive devices. Proper handling according to the established ESD handling rules as in IEC 61340-5-1 and EN 100015-1 is mandatory to avoid degradations of the oscillator performance due to damages of the internal circuitry by electrostatics. If not otherwise stated, our oscillators meet the requirements of the Human Body Model (HBM) according to JESD22-A114F.HandlingExcessive mechanical shocks during handling as well as manual and automatic assembly have to be avoided. If the oscillator was unintentionally dropped or otherwise subject to strong shocks, please verify that the electrical function is still within specification.Improper handling may also detoriate the coplanarity of bended leads of SMD components. SolderingOscillators can be processed using conventional soldering processes such as wave soldering, convection, infrared, and vapour phase reflow soldering under normal conditions. Solderability is guaranteed for one year storage under normal climatic conditions (+5°C to +35°C @ 40% to 75% relative humidity), however typically sufficient solderability –depending on the process – is maintained also for longer time periods. In cases of doubt, components older than one year should undergo a sample solderability test.The recommended reflow solder profile for SMT componets is according IPC/JEDEC J-STD-020 (latest revision)SMD oscillators must be on the top side of the PCB during the reflow process.After reflow soldering the frequency of the products may have shifted several ppm, which relaxes after several hours or days, depending on the products. For details please contact the manufacturer.CleaningCleaning is only allowed for hermetically sealed oscillators. Devices with non hermetical enclosures (e.g. with trimmer holes) shall not be cleaned by soaking or in vapour, because residues from the cleaning process may penetrate into the interior, and degrade the performance.Our products are laser marked. The marking of our oscillators is resistant to usual solvents, such as given in IEC 60068-2-45 Test XA. For applicable test conditions see IEC 60679-1.Ultrasonic cleaning is usually not harmful to oscillators at ultrasonic frequencies of 20kHz at the sound intensities conventional in industry. Sensitive devices may suffer mechanical damage if subjected to 40kHz ultrasound at high sound pressure. In cases of doubt, please conduct tests under practical conditions with the oscillators mounted on the PC board.Hermetical SealIf the device is specified as hermetically sealed, it meets the requirements of IEC 60679-1, i.e. for enclosures with a volume smaller than 4000mm³ the leak rate is below 5*10-8 bar cm3/s, for larger enclosures it is below 1*10-6 bar c bar cm3/s, tested according to IEC 60068-2-17 Test Qk.Glass feed-throughs may be damaged as a result of mechanical overload, such as bending the connection leads or cutting them with an unappropriated tool. In order to avoid microcracking, the wire must be held fixed in position by a pressure pad between glass feed-through and the bending point during the bending process. Check: there should be no damaged edges on the glass feed-through after the bending.Tape & ReelThe packing in tape and reel is according to IEC 60286-3.Details see tape & reel data sheets.QualificationVectron products are undergoing regular qualification/reliability tests as per product family definition. Results are available upon request. Customer specific qualification tests are subject to agreement.If not otherwise stated, the product qualifications are performed according to IEC 60679-5 or other valid industry standards.ScreeningOur oscillators are 100% tested, and all key manufacturing processes are controlled by Statistical Process Control (SPC). Additional screening is therefore usually not required.On request, we can perform screening tests according to MIL-PRF-55310, class B for discrete or hybrid constructions of commercial (COTS) products. For special requirements see the High Reliability Clock section.Demounting/Desoldering of Ocsillator device for analysis:The removal or desoldering of oscillators from customer application after SMT process may cause damage to the device if not handeld appropriately. It may lead to parametric change such as frequency shift (like OCXO: up to +/- 200 ppb) . It is utmost important to minimize the direct heat exposure to the device in order to avoid such effects. Use of hot air gun for desoldering should be avoided.A mechanical stress could also destroy the part, if exposed to excessive mechanical shock after removal process. Appropriate shock protection & ESD designated packaging must be used to avoid any external mechanical shock for FA return process.In general, the products* withstand the tests listed in the following Table 1, which are based on valid industry standards.*Additional note: Test conditions could vary for different product families and individual product specifications depending on the customer as well as product requirements.Recommended Environmental Test ConditionsTable 1。
深圳市晶科鑫实业有限公司样品承认书客户代码:物料名称:贴片钟振规格型号:7050 OSC 50.000MHZ 1.8~3.3V ±30PPM CMOSP N/ SJK:6N50000G33YC承认签章供应商承认()公司承认制定审核核准工程师审核批准林雁杨霞黄灏东盖章签署盖章签署日期日期批示:□接受□有条件接受备注:公司地址:深圳市龙岗区天安云谷产业园一期3栋C座12楼1204~1206室电话:传真:Approved by: 黄灏东Checked by: 杨霞Issued by: 玉静霞产品规格书SPECIFICATIONPN / SJK: 6N50000G33YC深圳市晶科鑫实业有限公司SHENZHEN CRYSTAL TECHNOLOGY INDUSTRIAL CO., LTD.公司地址:深圳市龙岗区天安云谷产业园一期3栋C座12楼1204~1206室电话:*************-837传真:*************修改记录版次修改日项目改定内容改定者确认者A1 2015-6-5 初版林雁杨霞1. ELECTRICAL SPECIFICATIONSStandard atmospheric conditionsUnless otherwise specified, the standard range of atmospheric conditions for making measurement and tests are as follow:Ambient temperature : 25±5℃Relative humidity : 40%~70%If there is any doubt about the results, measurement shall be made within the following limits: Ambient temperature : 25±3℃Relative humidity : 40%~70%Measure equipmentElectrical characteristics measured by MD 37WX-05M or equivalen t.Crystal cutting typeThe crystal is using AT CUT (thickness shear mode).Parameters SYMElectrical Spec. Notes MIN TYPE MAX UNITS1 Nominal Frequency 50.000000 MHZ2 FrequencyStabilityAT 25℃±10 PPM Over OperatingTemperature range±20 PPM3 Operating Temperature Topr -40 25 85 ℃4 Storage Temperature Tstg -55 ~ 125 ℃5 Supply Voltage VDD 1.8~3.3 ±10% V6 Input Current Icc 15 mA7 Enable Control Yes Pad18 Output Load : CMOS CL 15 pF9 Output Voltage High VoH 90%VddV10 Output Voltage Low VoL 10%VddV11 Rise Time Tr 5 ns 10%→90%VDDLevel12 Fall Time Tf 5 ns 90%→10%VDDLevel13 Symmetry (Duty ratio) TH/T 45 ~ 55 %14 Start-up Time Tosc 10 ms15 Enable Voltage High Vhi 70%VddV16 Disable Voltage Low Vlo 30%VddV17 Aging ±3 ppm/yr. 1st. Year at 25℃18 Output Disable Delay Time T off 150 us19 Output Enable Delay Time T on 150 us20 Phase Jitter (12KHZ~20MHZ)0.5 1.0 ps2. DIMENSIONS (Units :mm)MARKING3. TEST CIRCUITControl input (output enable/disable)Logic 1 or open on pad 1: Oscillator outputLogic 0 on pad 1 : Disable output to high impedance4. PART NUMBER GUIDESJK -6N— 50000 Frequency 50.000MHz — GFrequency tolerance—33Supply voltage — Y Fan out type X:TTL/CMOS — C Temperatur e5. WAVEFORM CONDITIONSWaveform measurement system shouldhave a min. bandwidth of 5 times thefrequency being tested.6. OUTPUT ENABLE / DISABLE DELAYThe following figure shows the oscillator timing during normal operation . Note that when the device is in standby,the oscillator stops. When standby is released, the oscillator starts and stable oscillator output occurs after a short delay7. SUGGESTED REFLOW PROFILE8. STRUCTURE ILLUSTRATIONNO COMPONENTSMATERIALS FINISH/SPECIFICATIONS1 LID Kovar (Fe/Co/Ni)2 Base(Package)Ceramic (AI2O3) + Kovar (Fe/Co/Ni)+ Ag/CuColor black 3 PAD Au Tungsten metalize+ Ni plating + Au plating4 Crystal blank SiO25 Conductive adhesiveAg Silicon resin6 Electrode Noble Metal7 IC chip8 Bonding wire Au Pad 1 options : NC is 5wires , EN is 6 wires.9. PACKING10. RELIABILITY TEST SPECIFICATION1.Mechanical EnduranceNo.Test Item Test Methods REF. DOC 1 Drop Test75 cm height,3 times on concrete floor .JIS C67012 Mechanical Shock Device are shocked to half sine wave ( 1000G ) three mutuallyperpendicular axes each 3 times. 0.5m sec.duration timeMIL-STD-202F3 VibrationFrequency range 10 ~ 2000 HzAmplitude 1.52 mm/20GSweep time 20 minutesPerpendicular axes each test time 4 Hrs(Total test time 12 Hrs)MIL-STD-883E4 Gross Leak Standard Sample For Automatic Gross LeakDetector, Test Pressure: 2kg / cm2MIL-STD-883E5 Fine Leak Helium Bomging 4.5 kgf / cm 2 for 2 Hrs6 SolderabilityTemperature 245 ℃ ± 5℃Immersing depth 0.5 mm minimumImmersion time 5 ± 1 secondsFlux Rosin resin methyl alcoholsolvent ( 1 : 4 )MIL-STD-883E2.Environmental EnduranceNo. Test Item Test Methods REF. DOC1 Resistance To SolderingHeatPre-heat temperature 125 ℃Pre-heat time 60 ~ 120 sec.Test temperature 260 ± 5 ℃Test time 10 ± 1 sec.MIL-STD-202F2 High Temp. Storage + 125 ℃ ±3 ℃ for 1000 ± 12 HrsMIL-STD-883E 3 Low Temp. Storage - 40 ℃ ± 3 ℃ for 1000 ± 12 Hrs4 Thermal Shock Total 100 cycles of the following temperaturecycleMIL-STD-883E5 Pressure CookerStorage121 ± 3℃ , RH100% , 2 bar , 240 Hrs JIS C67016 High Temp&Humidity 85℃ ± 3℃, RH 85% , 1000 Hrs JIS C5023。
≤–153 dBm Displayed Average Noise Level T ypical @ 1GHzUnprecedented in handheld battery powered spectrum analyzers, the sensitivity of the MS2721A delivers the ability to measure very low level signals. Coupled with a wide range of resolution bandwidth choices, you can configure the Spectrum Master to meet your most challenging measurement needs.As the spectrum becomes more and more congested,the ability to measure low level signals becomes more and more important not only for interference detectionbut also for wireless system planning.Soft Key Active Function BlockHeadset 2.5 mmSpeakerLAN ConnectorSoft KeysBattery Charger InputOn/Off ButtonDirectional ButtonsDual FunctionKeypadRotary KnobUSB Jack31981Measurement Area Wide RBW & VBW RangeAM/FM DemodChannel PowerACPROBWField StrengthC/ICellular Measurements yes yes yes yes yes WiFi Measurements yesyesyesyesSpectrum Monitoring yes yes Interference DetectionyesyesyesEthernet connection.Commonly needed measurements are built in. These include field strength,occupied bandwidth, channel power, adjacent channel power ratio,AM/FM/SSB demodulation and carrier to interference (C/I) ratio measurements.The MS2721A Spectrum Master has a very wide dynamic range, allowing measurement of very small signals in the presence of much larger signals.These pictures show a measurement of a –114 dBm signal with and without the presence of a –22 dBm signal only 20 kHz away.Measuring a Small SignalWide Dynamic Range — Measuring a small signal in the presence of a very large signal4a signal source removes any question as to the source of the sidebands.Powerline related sidebands on a synthesized signal generatorTypical Phase Noise PerformanceContinuous frequency coverage from 100 kHz to 7.1 GHz gives the wireless professional the performance needed for the most demanding measurements.Whether your need is for spectrum monitoring, WiFi and WiFi5 installation and testing, RF and microwave signal measurements or cellular signalmeasurements, the MS2721A Spectrum Master gives you the tools you need to make the job easier and more productive. The built-in AM/FM/SSB demodulator simplifies the job of identifying interfering signals.5Remote T oolsImagine sitting at your desk while controlling an MS2721A that is miles away,seeing the screen display and operating with an interface that looks exactly like the instrument itself. That is what Remote Tools lets you do.Local Language SupportThe MS2721A features eight languages English, Spanish, German, French,Japanese, Chinese, Italian and Korean, two custom user-defined languages can be uploaded into the instrument using Master Software Tools, supplied with the instrument.Fast Sweep SpeedThe MS2721A can do a full span sweep in ≤900 milliseconds, and sweep speed in zero span can be set from 50 microseconds up to 4294 seconds. This is faster and more flexible than any portable spectrum analyzer on the market today, simplifying the capture of intermittent interference signals.+43 dBm Maximum Safe Input LevelBecause the MS2721A can survive an input signal of +43 dBm (20 watts)without damage, you can rest assured that the MS2721A can survive in even the toughest RF environments.Spectrum MonitoringA critical function of any spectrum analyzer is the ability to accurately view aportion of the RF and microwave spectrum. The MS2721A performs this function admirably thanks to the wide frequency range and excellent dynamic range. A built-in 64 MB compact flash memory module allows thousands of traces to be stored. The external compact flash connector allows additional compact flash memory to expand the trace storage without limit.Limit LinesThe MS2721A includes two types of limit lines, lower limit lines and upper limit lines. Limit lines may be used either for visual reference or for pass/fail criteria by implementing limit alarms. Limit alarm failures are reported if a signal is above the upper limit line or below the lower limit line. Each limit line may consist of up to 40 segments.AM, FM and SSB DemodulationMultiple Language Support6Segmented Limit Linesa standard feature of the MS2721A.Frequency Counter MarkersThe MS2721A Spectrum Master has frequency counter markers withresolution to 1Hz. Tie this capability to an external precision time base to get complementary accuracy.Functions Multiple Marker Display up to six markers on screen, each marker includes a delta marker. Marker TableDisplay a table of up to six marker frequency and amplitude values plus delta marker frequency offset and amplitude.Upper/Lower Limit Fixed and SegmentedEach upper and lower limit can be made up of between one and 40 segments.Smart Measurements Occupied Bandwidth Measures 99.99% to 1% power bandwidth of a spectrum.Channel Power Measures the total power in a specified bandwidth.C/I Measures the carrier to interference ratio in a specified bandwidth.ACPR Measures power levels in the channels immediately above and below the center channel.Field StrengthUses antenna calibration tables to measure dBm/meter or dBmV/meter.AM/FM/SSB DemodulationAllows the user to listen to interfering signals. De-emphasis is included for narrow-band FM and wideband FM. Upper Sideband and Lower Sideband demodulation includes a BFO that can be tuned ±10 kHz from the center frequency.Multiple Markers plus Multiple Delta Markers7simplifying the capture of intermittent interference signals.Carrier to Interference MeasurementAs more 802.11 access points are installed, there is an increasing level ofinterference in the 2.4 GHz and 5.8 GHz bands occupied by this service and other devices such as cordless telephones. This measurement capability makes it simple for an access point installer to determine if the level of interference is sufficient to cause difficulty for users in the intended service area, and can show the need to change to another access channel. The wide frequency coverage of the MS2721A makes this the only spectrum analyzer you need to install and maintain 802.11a, 802.11b and 802.11g wireless networks.Occupied BandwidthThis measurement determines the amount of spectrum used by a modulated signal.You can choose between two different methods of determining bandwidth: the percent of power method or the “x” dB down method, where “x” can be from 3dB to 100 dB down the skirts of the signal.Adjacent Channel Power RatioA common transmitter measurement is that of adjacent channel leakagepower. This is the ratio of the amount of leakage power in an adjacent channel to the total transmitted power in the main channel, and is used to replace the traditional two-tone intermodulation distortion (IMD) test for system non-linear behavior.The result of an ACPR measurement can be expressed either as a power ratio or a power density. In order to calculate the upper and lower adjacent channel values, the MS2721A allows the adjustment of four parameters to meet specific measurement needs: main channel center frequency, measurement channel bandwidth, adjacent channel bandwidth and channel spacing. When an airinterface standard is specified in the MS2721A, all these values are automatically set to the normal values for that standard.Occupied Bandwidth8Tuning Resolution 1 HzFrequency Reference Aging±1 ppm/yearAccuracy±1 ppm (25°C ±25°C) + long term driftFrequency Span10 Hz to 7.1 GHz plus 0 Hz (zero span)Span Accuracy Accuracy±1 ppm (25°C ±25°C) + long term driftSweep Time minimum 100ms, 50µs in zero spanSweep Time Accuracy±2% in zero spanSweep Trigger Free run, Single, Video, ExternalResolution Bandwidth(–3 dB width) 10 Hz to 3 MHz in 1-3 sequence ±10%, 8 MHz demodulation bandwidthVideo Bandwidth(–3 dB) 1 Hz to 3 MHz in 1-3 sequenceSSB Phase Noise–100 dBc/Hz max at 10, 20 and 30 kHz offset from carrier–102 dBc/Hz max at 100 kHz offset from carrierInput Damage Level≥10 dB attenuation, >+43 dBm, ±50 Vdc<10 dB attenuation , >+23 dBm, ±50 VdcInput protection relay opens at >30 dBm with ≥10 dB input attenuationand at approximately 10 to 23 dBm with <10 dB attenuationRF Input VSWR 2.0:1 maximum, 1.5:1 typical (≥10 dB attenuation)Reference Level Adjustable over amplitude rangeESD Damage Level>10 kV ≥10 dB attenuationAbsolute amplitude accuracyPower levels ≥–50 dBm, ≥35 dBinput attenuation, preamp off100 kHz to ≤10 MHz ±1.5 dB>10 MHz to 4 GHz ±1.25 dB>4 GHz to 7.1 GHz ±1.75 dBSecond Harmonic Distortion(0 dB input attenuation, –30 dBm input)–50 dBc, 0.05 to 0.75 GHz–40 dBc, >0.75 to 1.05 GHz–50 dBc, >1.05 to 1.4 GHz–70 dBc, >1.4 to 2 GHz–80 dBc, >2 GHz9Displayed Average Noise LevelDANL in 10 Hz RBW, 0 dB attentuationreference level –50 dBmFrequency Preamp OnTypical Max10 MHz to 1 GHz–153dBm–151dBm>1 GHz to 2.2 GHz–150dBm–149dBm>2.2 GHz to 2.8 GHz–146dBm–143dBm>2.8 GHz to 4.0 GHz–150dBm–149dBm>4.0 GHz to 7.1 GHz–148dBm–146dBm Noise Figure (Derived from DANL measurement)0 dB attenuation, reference level–50 dBm, 23°C, preamp onFrequency Typical10 MHz to 1.0 GHz11 dB>1 GHz to 2.2 GHz14 dB>2.2 GHz to 2.8 GHz18 dB>2.8 GHz to 4.0 GHz14 dB>4.0 GHz to 7.1 GHz16 dBDisplay Range 2 to 15 dB/div in 1 dB steps. Ten divisions displayed.Amplitude Units Log Scale modes: dBm, dBV, dBmv, dBµVLinear Scale modes: nV, µV, mV, V, kV, nW, µW, mW, W, kW Attenuator Range0 to 65 dBAttenuator Resolution 5 dB stepsInput-Related Spurious–60dBc max*, (<–70 dBc typical), –30 dBm input, 0 dB RF attenuation *Exceptions:Input Frequency Spur Level1674MHz–46 dBc max (–56 dBc typical), 0 to 2800 MHz>1674 to 1774 MHz–50 dBc max (–60 dBc typical) at (F input– 1674 MHz)Residual Spurious, Preamp Off(RF input terminated, 0dB RF attenuation)–90 dBm max**, 100 kHz to <3200 MHz–84 dBm max**, 3200 to 7100 MHz**Exceptions:Frequency Spur Level250, 300 and 350 MHz–85 dBm max~4010 MHz–80 dBm max (–90 dBm typical)~5084 MHz–70 dBm max (–83 dBm typical)~5894 MHz–75 dBm max (–87 dBm typical)~7028 MHz–80 dBm max (–92 dBm typical)Residual Spurious, Preamp On: –100 dBm max(RF input terminated, 0dB RF attenuation)10DisplayBright Color Transmissive LCD, Full SVGA, 8”LanguagesBuilt-in English, Spanish, French, German, Japanese, Chinese, Italian and Korean. Theinstrument also has the capability to have customized languages installed from Master SoftwareTools.Marker ModesSix Markers, Seven Modes: Standard, Delta, Marker to Peak, Marker to Center, Marker toReference Level, Next Peak Left, Next Peak Right, All Markers Off, Noise Marker, FrequencyCounter Marker (1 Hz resolution)SweepsFull span, Zero span, Span Up/Span DownDetectionPeak, RMS, Negative, SampleMemoryTrace and Setup storage is limited only by the capacity of the installed Compact Flash card.For a 256 MB card, storage is greater than 5000 traces and 5000 setups.T racesDisplayed Traces: Three traces with trace overlay. One trace is always the live data, two tracescan be either stored data or traces which have been mathematically manipulated(such as C=A–B).InterfacesType N female RF ConnectorBNC female connectors for external frequency reference and external triggerMini-B USB 2.0 for data transfer to a PCRJ45 connector for Ethernet 10/100-BaseT2.5mm 3-wire headset connectorSize and WeightSize: 12 x 7 x 2.4 in. (313 x 211 x 77mm)Weight: <6.4 lbs. (2.9kg) (typical)EnvironmentalMIL-PRF-28800F Class 2Operating: –10°C to 55°C, humidity 85% or lessStorage: –51°C to 71°CAltitude: 4600 meters, operating and non-operatingSafetyConforms to EN 61010-1 for Class 1 portable equipment.Electromagnetic CompatibilityMeets European Community requirements for CE marking.Specifications are subject to change without notice.11Ordering InformationModel: MS2721A - Handheld Spectrum Analyzer100 kHz to 7.1 GHzStandard Accessories10580-00103User’s Guide61382Soft Carrying Case40-168AC – DC Adapter806-62Automotive Cigarette Lighter/12 Volt DC Adapter 2300-498Master Software Tools CD ROM2000-1360USB A-mini B cable2000-1371Ethernet Cable633-44Rechargeable battery, Li-Ion2000-135864 MB Compact Flash Memory Module64343Tilt Bail1091-172Adapter, N(m) to B(f), 50Ω1091-27Adapter, N(m) to SMA(f), 50ΩOne Year WarrantyCertificate of Calibration and ConformanceOptional Accessories42N50A-3030 dB, 50 Watt, Bi-directional, DC to 18 GHz,N(m)to N(f) Attenuator34NN50A Precision Adapter, DC to 18 GHz, 50Ω,N(m) to N(m)34NFNF50Precision Adapter, DC to 18 GHz, 50Ω, N(f) to N(f) 15NNF50-1.5B Test port cable, armored, 1.5 meter N(m) to N(f)18 GHz15ND50-1.5C Test port cable armored, 1.5 meter, N(m) to7/16 DIN(m), 6.0 GHz15NDF50-1.5C Test port cable armored, 1.5 meter, N(m) to7/16 DIN(f), 6.0 GHz510-90Adapter, 7/16 DIN(f) to N(m), DC to 7.5 GHz, 50Ω510-91Adapter, 7/16 DIN(f)-N(f), DC to 7.5 GHz, 50Ω510-92Adapter, 7/16 DIN(m)-N(m), DC to 7.5 GHz, 50Ω510-93Adapter, 7/16 DIN(m)-N(f), DC to 7.5 GHz, 50Ω510-96Adapter 7/16 DIN(m) to 7/16 DIN(m),DC to 7.5 GHz, 50Ω1030-86Band Pass Filter, 800 MHz band, 806-869 MHz,Loss = 1.7 dB, N(m)-SMA(f)1030-87Band Pass Filter, 900 MHz band, 902-960 MHz,Loss = 1.7 dB, N(m)-SMA(f)1030-88Band Pass Filter, 1900 MHz band, 1.85-1.99 GHz,Loss = 1.8 dB, N(m)-SMA(f)1030-89Band Pass Filter, 2400 MHz band, 2.4-2.5 GHz,Loss = 1.9 dB, N(m)-SMA(f)510-97Adapter 7/16 DIN(f) to 7/16 DIN(f), 7.5 GHz61382Soft carrying case40-168AC/DC adapter806-62Automotive Cigarette Lighter/12 Volt DC Adapter 760-229Transit Case for Anritsu MS2721A HandheldSpectrum Analyzer2300-498Anritsu Master Software Tools CD ROM10580-00103Anritsu HHSA User’s Guide, Model MS2721A 10580-00104Anritsu HHSA Programming Manual,Model MS2721A10580-00105Anritsu HHSA Maintenance Manual,Model MS2721A633-44Rechargeable battery, Li-Ion2000-1374Dual External, Li-Ion charger with universalpower supply2000-1030Portable antenna, 50Ω, SMA(m) 1.71-1.88 GHz 2000-1031Portable antenna, 50Ω, SMA(m) 1.85-1.99 GHz 2000-1032Portable antenna, 50Ω, SMA(m) 2.4-2.5 GHz2000-1035Portable antenna, 50Ω, SMA(m) 896-941 MHz 2000-1200Portable antenna, 50Ω, SMA(m) 806-869 MHz 2000-1361Portable antenna, 50Ω, SMA(m) 5725-5825 MHz 2000-135864 MB Compact Flash Memory ModuleDirectional Antennas2000-1411Portable Yagi antenna, 10 dBd, N(f) 822-900 MHz 2000-1412Portable Yagi antenna, 10 dBd, N(f) 885-975 MHz 2000-1413Portable Yagi antenna, 10 dBd, N(f) 1.71-1.88 GHz 2000-1414Portable Yagi antenna, 9.3 dBd, N(f) 1.85-1.99 GHz 2000-1415Portable Yagi antenna, 10 dBd, N(f) 2.4-2.5 GHz 2000-1416Portable Yagi antenna, 10 dBd, N(f) 1.92-2.23 GHzDiscover What’s Possible®©Anritsu January 2005. All trademarks are registered trademarks of their respective companies.Data subject to change without notice. For more recent specifications visit 11410-00332, Rev. CSALES CENTERS:United States (800) ANRITSUCanada (800) ANRITSUSouth America 55 (21) 2527-6922Europe 44 (0) 1582-433433Japan 81 (46) 223-1111Asia-Pacific (852) 2301-4980Microwave Measurement Division490 Jarvis Drive, Morgan Hill, CA 95037-2809。
Error MessagesF9001 Error internal function call.F9002 Error internal RTOS function callF9003 WatchdogF9004 Hardware trapF8000 Fatal hardware errorF8010 Autom. commutation: Max. motion range when moving back F8011 Commutation offset could not be determinedF8012 Autom. commutation: Max. motion rangeF8013 Automatic commutation: Current too lowF8014 Automatic commutation: OvercurrentF8015 Automatic commutation: TimeoutF8016 Automatic commutation: Iteration without resultF8017 Automatic commutation: Incorrect commutation adjustment F8018 Device overtemperature shutdownF8022 Enc. 1: Enc. signals incorr. (can be cleared in ph. 2) F8023 Error mechanical link of encoder or motor connectionF8025 Overvoltage in power sectionF8027 Safe torque off while drive enabledF8028 Overcurrent in power sectionF8030 Safe stop 1 while drive enabledF8042 Encoder 2 error: Signal amplitude incorrectF8057 Device overload shutdownF8060 Overcurrent in power sectionF8064 Interruption of motor phaseF8067 Synchronization PWM-Timer wrongF8069 +/-15Volt DC errorF8070 +24Volt DC errorF8076 Error in error angle loopF8078 Speed loop error.F8079 Velocity limit value exceededF8091 Power section defectiveF8100 Error when initializing the parameter handlingF8102 Error when initializing power sectionF8118 Invalid power section/firmware combinationF8120 Invalid control section/firmware combinationF8122 Control section defectiveF8129 Incorrect optional module firmwareF8130 Firmware of option 2 of safety technology defectiveF8133 Error when checking interrupting circuitsF8134 SBS: Fatal errorF8135 SMD: Velocity exceededF8140 Fatal CCD error.F8201 Safety command for basic initialization incorrectF8203 Safety technology configuration parameter invalidF8813 Connection error mains chokeF8830 Power section errorF8838 Overcurrent external braking resistorF7010 Safely-limited increment exceededF7011 Safely-monitored position, exceeded in pos. DirectionF7012 Safely-monitored position, exceeded in neg. DirectionF7013 Safely-limited speed exceededF7020 Safe maximum speed exceededF7021 Safely-limited position exceededF7030 Position window Safe stop 2 exceededF7031 Incorrect direction of motionF7040 Validation error parameterized - effective thresholdF7041 Actual position value validation errorF7042 Validation error of safe operation modeF7043 Error of output stage interlockF7050 Time for stopping process exceeded8.3.15 F7051 Safely-monitored deceleration exceeded (159)8.4 Travel Range Errors (F6xxx) (161)8.4.1 Behavior in the Case of Travel Range Errors (161)8.4.2 F6010 PLC Runtime Error (162)8.4.3 F6024 Maximum braking time exceeded (163)8.4.4 F6028 Position limit value exceeded (overflow) (164)8.4.5 F6029 Positive position limit exceeded (164)8.4.6 F6030 Negative position limit exceeded (165)8.4.7 F6034 Emergency-Stop (166)8.4.8 F6042 Both travel range limit switches activated (167)8.4.9 F6043 Positive travel range limit switch activated (167)8.4.10 F6044 Negative travel range limit switch activated (168)8.4.11 F6140 CCD slave error (emergency halt) (169)8.5 Interface Errors (F4xxx) (169)8.5.1 Behavior in the Case of Interface Errors (169)8.5.2 F4001 Sync telegram failure (170)8.5.3 F4002 RTD telegram failure (171)8.5.4 F4003 Invalid communication phase shutdown (172)8.5.5 F4004 Error during phase progression (172)8.5.6 F4005 Error during phase regression (173)8.5.7 F4006 Phase switching without ready signal (173)8.5.8 F4009 Bus failure (173)8.5.9 F4012 Incorrect I/O length (175)8.5.10 F4016 PLC double real-time channel failure (176)8.5.11 F4017 S-III: Incorrect sequence during phase switch (176)8.5.12 F4034 Emergency-Stop (177)8.5.13 F4140 CCD communication error (178)8.6 Non-Fatal Safety Technology Errors (F3xxx) (178)8.6.1 Behavior in the Case of Non-Fatal Safety Technology Errors (178)8.6.2 F3111 Refer. missing when selecting safety related end pos (179)8.6.3 F3112 Safe reference missing (179)8.6.4 F3115 Brake check time interval exceeded (181)Troubleshooting Guide | Rexroth IndraDrive Electric Drivesand ControlsI Bosch Rexroth AG VII/XXIITable of ContentsPage8.6.5 F3116 Nominal load torque of holding system exceeded (182)8.6.6 F3117 Actual position values validation error (182)8.6.7 F3122 SBS: System error (183)8.6.8 F3123 SBS: Brake check missing (184)8.6.9 F3130 Error when checking input signals (185)8.6.10 F3131 Error when checking acknowledgment signal (185)8.6.11 F3132 Error when checking diagnostic output signal (186)8.6.12 F3133 Error when checking interrupting circuits (187)8.6.13 F3134 Dynamization time interval incorrect (188)8.6.14 F3135 Dynamization pulse width incorrect (189)8.6.15 F3140 Safety parameters validation error (192)8.6.16 F3141 Selection validation error (192)8.6.17 F3142 Activation time of enabling control exceeded (193)8.6.18 F3143 Safety command for clearing errors incorrect (194)8.6.19 F3144 Incorrect safety configuration (195)8.6.20 F3145 Error when unlocking the safety door (196)8.6.21 F3146 System error channel 2 (197)8.6.22 F3147 System error channel 1 (198)8.6.23 F3150 Safety command for system start incorrect (199)8.6.24 F3151 Safety command for system halt incorrect (200)8.6.25 F3152 Incorrect backup of safety technology data (201)8.6.26 F3160 Communication error of safe communication (202)8.7 Non-Fatal Errors (F2xxx) (202)8.7.1 Behavior in the Case of Non-Fatal Errors (202)8.7.2 F2002 Encoder assignment not allowed for synchronization (203)8.7.3 F2003 Motion step skipped (203)8.7.4 F2004 Error in MotionProfile (204)8.7.5 F2005 Cam table invalid (205)8.7.6 F2006 MMC was removed (206)8.7.7 F2007 Switching to non-initialized operation mode (206)8.7.8 F2008 RL The motor type has changed (207)8.7.9 F2009 PL Load parameter default values (208)8.7.10 F2010 Error when initializing digital I/O (-> S-0-0423) (209)8.7.11 F2011 PLC - Error no. 1 (210)8.7.12 F2012 PLC - Error no. 2 (210)8.7.13 F2013 PLC - Error no. 3 (211)8.7.14 F2014 PLC - Error no. 4 (211)8.7.15 F2018 Device overtemperature shutdown (211)8.7.16 F2019 Motor overtemperature shutdown (212)8.7.17 F2021 Motor temperature monitor defective (213)8.7.18 F2022 Device temperature monitor defective (214)8.7.19 F2025 Drive not ready for control (214)8.7.20 F2026 Undervoltage in power section (215)8.7.21 F2027 Excessive oscillation in DC bus (216)8.7.22 F2028 Excessive deviation (216)8.7.23 F2031 Encoder 1 error: Signal amplitude incorrect (217)VIII/XXII Bosch Rexroth AG | Electric Drivesand ControlsRexroth IndraDrive | Troubleshooting GuideTable of ContentsPage8.7.24 F2032 Validation error during commutation fine adjustment (217)8.7.25 F2033 External power supply X10 error (218)8.7.26 F2036 Excessive position feedback difference (219)8.7.27 F2037 Excessive position command difference (220)8.7.28 F2039 Maximum acceleration exceeded (220)8.7.29 F2040 Device overtemperature 2 shutdown (221)8.7.30 F2042 Encoder 2: Encoder signals incorrect (222)8.7.31 F2043 Measuring encoder: Encoder signals incorrect (222)8.7.32 F2044 External power supply X15 error (223)8.7.33 F2048 Low battery voltage (224)8.7.34 F2050 Overflow of target position preset memory (225)8.7.35 F2051 No sequential block in target position preset memory (225)8.7.36 F2053 Incr. encoder emulator: Pulse frequency too high (226)8.7.37 F2054 Incr. encoder emulator: Hardware error (226)8.7.38 F2055 External power supply dig. I/O error (227)8.7.39 F2057 Target position out of travel range (227)8.7.40 F2058 Internal overflow by positioning input (228)8.7.41 F2059 Incorrect command value direction when positioning (229)8.7.42 F2063 Internal overflow master axis generator (230)8.7.43 F2064 Incorrect cmd value direction master axis generator (230)8.7.44 F2067 Synchronization to master communication incorrect (231)8.7.45 F2068 Brake error (231)8.7.46 F2069 Error when releasing the motor holding brake (232)8.7.47 F2074 Actual pos. value 1 outside absolute encoder window (232)8.7.48 F2075 Actual pos. value 2 outside absolute encoder window (233)8.7.49 F2076 Actual pos. value 3 outside absolute encoder window (234)8.7.50 F2077 Current measurement trim wrong (235)8.7.51 F2086 Error supply module (236)8.7.52 F2087 Module group communication error (236)8.7.53 F2100 Incorrect access to command value memory (237)8.7.54 F2101 It was impossible to address MMC (237)8.7.55 F2102 It was impossible to address I2C memory (238)8.7.56 F2103 It was impossible to address EnDat memory (238)8.7.57 F2104 Commutation offset invalid (239)8.7.58 F2105 It was impossible to address Hiperface memory (239)8.7.59 F2110 Error in non-cyclical data communic. of power section (240)8.7.60 F2120 MMC: Defective or missing, replace (240)8.7.61 F2121 MMC: Incorrect data or file, create correctly (241)8.7.62 F2122 MMC: Incorrect IBF file, correct it (241)8.7.63 F2123 Retain data backup impossible (242)8.7.64 F2124 MMC: Saving too slowly, replace (243)8.7.65 F2130 Error comfort control panel (243)8.7.66 F2140 CCD slave error (243)8.7.67 F2150 MLD motion function block error (244)8.7.68 F2174 Loss of motor encoder reference (244)8.7.69 F2175 Loss of optional encoder reference (245)Troubleshooting Guide | Rexroth IndraDrive Electric Drivesand Controls| Bosch Rexroth AG IX/XXIITable of ContentsPage8.7.70 F2176 Loss of measuring encoder reference (246)8.7.71 F2177 Modulo limitation error of motor encoder (246)8.7.72 F2178 Modulo limitation error of optional encoder (247)8.7.73 F2179 Modulo limitation error of measuring encoder (247)8.7.74 F2190 Incorrect Ethernet configuration (248)8.7.75 F2260 Command current limit shutoff (249)8.7.76 F2270 Analog input 1 or 2, wire break (249)8.7.77 F2802 PLL is not synchronized (250)8.7.78 F2814 Undervoltage in mains (250)8.7.79 F2815 Overvoltage in mains (251)8.7.80 F2816 Softstart fault power supply unit (251)8.7.81 F2817 Overvoltage in power section (251)8.7.82 F2818 Phase failure (252)8.7.83 F2819 Mains failure (253)8.7.84 F2820 Braking resistor overload (253)8.7.85 F2821 Error in control of braking resistor (254)8.7.86 F2825 Switch-on threshold braking resistor too low (255)8.7.87 F2833 Ground fault in motor line (255)8.7.88 F2834 Contactor control error (256)8.7.89 F2835 Mains contactor wiring error (256)8.7.90 F2836 DC bus balancing monitor error (257)8.7.91 F2837 Contactor monitoring error (257)8.7.92 F2840 Error supply shutdown (257)8.7.93 F2860 Overcurrent in mains-side power section (258)8.7.94 F2890 Invalid device code (259)8.7.95 F2891 Incorrect interrupt timing (259)8.7.96 F2892 Hardware variant not supported (259)8.8 SERCOS Error Codes / Error Messages of Serial Communication (259)9 Warnings (Exxxx) (263)9.1 Fatal Warnings (E8xxx) (263)9.1.1 Behavior in the Case of Fatal Warnings (263)9.1.2 E8025 Overvoltage in power section (263)9.1.3 E8026 Undervoltage in power section (264)9.1.4 E8027 Safe torque off while drive enabled (265)9.1.5 E8028 Overcurrent in power section (265)9.1.6 E8029 Positive position limit exceeded (266)9.1.7 E8030 Negative position limit exceeded (267)9.1.8 E8034 Emergency-Stop (268)9.1.9 E8040 Torque/force actual value limit active (268)9.1.10 E8041 Current limit active (269)9.1.11 E8042 Both travel range limit switches activated (269)9.1.12 E8043 Positive travel range limit switch activated (270)9.1.13 E8044 Negative travel range limit switch activated (271)9.1.14 E8055 Motor overload, current limit active (271)9.1.15 E8057 Device overload, current limit active (272)X/XXII Bosch Rexroth AG | Electric Drivesand ControlsRexroth IndraDrive | Troubleshooting GuideTable of ContentsPage9.1.16 E8058 Drive system not ready for operation (273)9.1.17 E8260 Torque/force command value limit active (273)9.1.18 E8802 PLL is not synchronized (274)9.1.19 E8814 Undervoltage in mains (275)9.1.20 E8815 Overvoltage in mains (275)9.1.21 E8818 Phase failure (276)9.1.22 E8819 Mains failure (276)9.2 Warnings of Category E4xxx (277)9.2.1 E4001 Double MST failure shutdown (277)9.2.2 E4002 Double MDT failure shutdown (278)9.2.3 E4005 No command value input via master communication (279)9.2.4 E4007 SERCOS III: Consumer connection failed (280)9.2.5 E4008 Invalid addressing command value data container A (280)9.2.6 E4009 Invalid addressing actual value data container A (281)9.2.7 E4010 Slave not scanned or address 0 (281)9.2.8 E4012 Maximum number of CCD slaves exceeded (282)9.2.9 E4013 Incorrect CCD addressing (282)9.2.10 E4014 Incorrect phase switch of CCD slaves (283)9.3 Possible Warnings When Operating Safety Technology (E3xxx) (283)9.3.1 Behavior in Case a Safety Technology Warning Occurs (283)9.3.2 E3100 Error when checking input signals (284)9.3.3 E3101 Error when checking acknowledgment signal (284)9.3.4 E3102 Actual position values validation error (285)9.3.5 E3103 Dynamization failed (285)9.3.6 E3104 Safety parameters validation error (286)9.3.7 E3105 Validation error of safe operation mode (286)9.3.8 E3106 System error safety technology (287)9.3.9 E3107 Safe reference missing (287)9.3.10 E3108 Safely-monitored deceleration exceeded (288)9.3.11 E3110 Time interval of forced dynamization exceeded (289)9.3.12 E3115 Prewarning, end of brake check time interval (289)9.3.13 E3116 Nominal load torque of holding system reached (290)9.4 Non-Fatal Warnings (E2xxx) (290)9.4.1 Behavior in Case a Non-Fatal Warning Occurs (290)9.4.2 E2010 Position control with encoder 2 not possible (291)9.4.3 E2011 PLC - Warning no. 1 (291)9.4.4 E2012 PLC - Warning no. 2 (291)9.4.5 E2013 PLC - Warning no. 3 (292)9.4.6 E2014 PLC - Warning no. 4 (292)9.4.7 E2021 Motor temperature outside of measuring range (292)9.4.8 E2026 Undervoltage in power section (293)9.4.9 E2040 Device overtemperature 2 prewarning (294)9.4.10 E2047 Interpolation velocity = 0 (294)9.4.11 E2048 Interpolation acceleration = 0 (295)9.4.12 E2049 Positioning velocity >= limit value (296)9.4.13 E2050 Device overtemp. Prewarning (297)Troubleshooting Guide | Rexroth IndraDrive Electric Drivesand Controls| Bosch Rexroth AG XI/XXIITable of ContentsPage9.4.14 E2051 Motor overtemp. prewarning (298)9.4.15 E2053 Target position out of travel range (298)9.4.16 E2054 Not homed (300)9.4.17 E2055 Feedrate override S-0-0108 = 0 (300)9.4.18 E2056 Torque limit = 0 (301)9.4.19 E2058 Selected positioning block has not been programmed (302)9.4.20 E2059 Velocity command value limit active (302)9.4.21 E2061 Device overload prewarning (303)9.4.22 E2063 Velocity command value > limit value (304)9.4.23 E2064 Target position out of num. range (304)9.4.24 E2069 Holding brake torque too low (305)9.4.25 E2070 Acceleration limit active (306)9.4.26 E2074 Encoder 1: Encoder signals disturbed (306)9.4.27 E2075 Encoder 2: Encoder signals disturbed (307)9.4.28 E2076 Measuring encoder: Encoder signals disturbed (308)9.4.29 E2077 Absolute encoder monitoring, motor encoder (encoder alarm) (308)9.4.30 E2078 Absolute encoder monitoring, opt. encoder (encoder alarm) (309)9.4.31 E2079 Absolute enc. monitoring, measuring encoder (encoder alarm) (309)9.4.32 E2086 Prewarning supply module overload (310)9.4.33 E2092 Internal synchronization defective (310)9.4.34 E2100 Positioning velocity of master axis generator too high (311)9.4.35 E2101 Acceleration of master axis generator is zero (312)9.4.36 E2140 CCD error at node (312)9.4.37 E2270 Analog input 1 or 2, wire break (312)9.4.38 E2802 HW control of braking resistor (313)9.4.39 E2810 Drive system not ready for operation (314)9.4.40 E2814 Undervoltage in mains (314)9.4.41 E2816 Undervoltage in power section (314)9.4.42 E2818 Phase failure (315)9.4.43 E2819 Mains failure (315)9.4.44 E2820 Braking resistor overload prewarning (316)9.4.45 E2829 Not ready for power on (316)。
GETTING STARTED GUIDENI 922016 AI, ±10 V, 16 Bit, 100 kS/s/ch SimultaneousThis document explains how to connect to the NI 9220. In this document, the NI 9220 with spring terminal and the NI 9220 with DSUB are referred to inclusively as the NI 9220.Note Before you begin, complete the software andhardware installation procedures in your chassisdocumentation.Note The guidelines in this document are specific tothe NI 9220. The other components in the system mightnot meet the same safety ratings. Refer to thedocumentation for each component in the system todetermine the safety and EMC ratings for the entiresystem.Caution Electrostatic Discharge (ESD) can damagethe NI 9220 with spring terminal. To prevent damage,use industry-standard ESD prevention measures duringinstallation, maintenance, and operation.Safety GuidelinesOperate the NI 9220 only as described in this document.2| | NI 9220 Getting Started GuideCaution Do not operate the NI 9220 in a manner notspecified in this document. Product misuse can result ina hazard. You can compromise the safety protectionbuilt into the product if the product is damaged in anyway. If the product is damaged, return it to NI forrepair.Hazardous Voltage This icon denotes a warningadvising you to take precautions to avoid electricalshock with the NI 9220 with spring terminal. Safety VoltagesConnect only voltages that are within the following limits:NI 9220 with Spring Terminal Isolation Voltages Channel-to-channel NoneChannel-to-earth groundContinuous250 Vrms,Measurement Category IIWithstand up to 4,000 m 3,000 Vrms, verified by a 5 s dielectric withstand testNI 9220 Getting Started Guide| © National Instruments| 3Measurement Category II is for measurements performed on circuits directly connected to the electrical distribution system. This category refers to local-level electrical distribution, such as that provided by a standard wall outlet, for example, 115 V for U.S. or 230 V for Europe.Caution Do not connect the NI 9220 with springterminal to signals or use for measurements withinMeasurement Categories III or IV.NI 9220 with DSUB Safety VoltagesChannel-to-COM±30 V maximumIsolationChannel-to-COM NoneChannel-to-earth groundContinuous60 VDC, MeasurementCategory IWithstand up to 2,000 m 1,000 Vrms, verified by a 5 s dielectric withstand testMeasurement Category I is for measurements performed on circuits not directly connected to the electrical distribution system 4| | NI 9220 Getting Started Guidereferred to as MAINS voltage. MAINS is a hazardous live electrical supply system that powers equipment. This category is for measurements of voltages from specially protected secondary circuits. Such voltage measurements include signal levels, special equipment, limited-energy parts of equipment, circuits powered by regulated low-voltage sources, and electronics.Caution Do not connect the NI 9220 with DSUB tosignals or use for measurements within MeasurementCategories II, III, or IV.Safety Guidelines for Hazardous VoltagesYou can connect hazardous voltages only to theNI 9220 with spring terminal. Do not connect hazardous voltages to the NI 9220 with DSUB.If hazardous voltages are connected to the device, take the following precautions. A hazardous voltage is a voltage greater than 42.4 Vpk voltage or 60 VDC to earth ground.Caution Ensure that hazardous voltage wiring isperformed only by qualified personnel adhering to localelectrical standards.NI 9220 Getting Started Guide| © National Instruments| 5Caution Do not mix hazardous voltage circuits andhuman-accessible circuits on the same module.Caution Ensure that devices and circuits connected tothe module are properly insulated from human contact.Caution When module terminals are hazardousvoltage LIVE (>42.4 Vpk/60 VDC), you must ensurethat devices and circuits connected to the module areproperly insulated from human contact. You must usethe NI 9940 connector backshell kit to ensure that theterminals are not accessible.Safety Guidelines for Hazardous LocationsThe NI 9220 is suitable for use in Class I, Division 2, Groups A, B, C, D, T4 hazardous locations; Class I, Zone 2, AEx nA IIC T4 and Ex nA IIC T4 hazardous locations; and nonhazardous locations only. Follow these guidelines if you are installing the NI 9220 in a potentially explosive environment. Not following these guidelines may result in serious injury or death.Caution Do not disconnect I/O-side wires orconnectors unless power has been switched off or thearea is known to be nonhazardous.6| | NI 9220 Getting Started GuideCaution Do not remove modules unless power hasbeen switched off or the area is known to benonhazardous.Caution Substitution of components may impairsuitability for Class I, Division 2.Caution For Division 2 and Zone 2 applications,install the system in an enclosure rated to at least IP54as defined by IEC/EN 60079-15.Caution For Division 2 and Zone 2 applications,connected signals must be within the following limits. Capacitance0.2 µF maximumSpecial Conditions for Hazardous Locations Use in Europe and InternationallyThe NI 9220 has been evaluated as Ex nA IIC T4 Gc equipment under DEMKO 12 ATEX 1202658X and is IECEx UL 14.0089X certified. Each NI 9220 is marked II 3G and is suitable for use in Zone 2 hazardous locations, in ambient temperatures of -40 °C ≤ Ta ≤ 70 °C. If you are using the NI 9220 in Gas Group IIC hazardous locations, you must use the device in an NI chassis thatNI 9220 Getting Started Guide| © National Instruments| 7has been evaluated as Ex nC IIC T4, Ex IIC T4, Ex nA IIC T4, or Ex nL IIC T4 equipment.Caution You must make sure that transientdisturbances do not exceed 140% of the rated voltage.Caution The system shall only be used in an area ofnot more than Pollution Degree 2, as defined inIEC/EN 60664-1.Caution The system shall be mounted in anATEX/IECEx-certified enclosure with a minimumingress protection rating of at least IP54 as defined inIEC/EN 60079-15.Caution The enclosure must have a door or coveraccessible only by the use of a tool.Electromagnetic Compatibility Guidelines This product was tested and complies with the regulatory requirements and limits for electromagnetic compatibility (EMC) stated in the product specifications. These requirements and limits provide reasonable protection against harmful interference 8| | NI 9220 Getting Started Guidewhen the product is operated in the intended operational electromagnetic environment.This product is intended for use in industrial locations. However, harmful interference may occur in some installations, when the product is connected to a peripheral device or test object, or if the product is used in residential or commercial areas. To minimize interference with radio and television reception and prevent unacceptable performance degradation, install and use this product in strict accordance with the instructions in the product documentation.Furthermore, any changes or modifications to the product not expressly approved by National Instruments could void your authority to operate it under your local regulatory rules.Caution To ensure the specified EMC performance ofthe NI 9220 with DSUB, the length of all I/O cablesmust be no longer than 30 m (100 ft).Caution To ensure the specified EMC performance,operate this product only with shielded cables andaccessories. Do not use unshielded cables oraccessories unless they are installed in a shieldedenclosure with properly designed and shielded input/NI 9220 Getting Started Guide| © National Instruments| 9output ports and connected to the product using ashielded cable. If unshielded cables or accessories arenot properly installed and shielded, the EMCspecifications for the product are no longer guaranteed. Special Conditions for Marine ApplicationsSome products are Lloyd’s Register (LR) Type Approved for marine (shipboard) applications. To verify Lloyd’s Register certification for a product, visit /certification and search for the LR certificate, or look for the Lloyd’s Register mark on the product.Caution In order to meet the EMC requirements formarine applications, install the product in a shieldedenclosure with shielded and/or filtered power andinput/output ports. In addition, take precautions whendesigning, selecting, and installing measurement probesand cables to ensure that the desired EMC performanceis attained.10| | NI 9220 Getting Started GuidePreparing the EnvironmentEnsure that the environment in which you are using the NI 9220 meets the following specifications.Operating temperature(IEC 60068-2-1, IEC 60068-2-2)-40 °C to 70 °COperating humidity (IEC 60068-2-78)10% RH to 90% RH, noncondensingPollution Degree2Maximum altitudeFor NI 9220 withspring terminal4,000 mFor NI 9220 withDSUB2,000 mIndoor use only.Note Refer to the device datasheet on /manualsfor complete specifications.NI 9220 Getting Started Guide| © National Instruments| 11NI 9220 Pinout12| | NI 9220 Getting Started GuideGrounded Differential ConnectionsNI 9220 Getting Started Guide| © National Instruments| 13Floating Differential ConnectionsConnect the negative lead to COM through a 1 MΩ resistor to keep the signal source within the common-mode voltage range. The NI 9220 does not read data accurately if the signal source is outside of the common-mode voltage range.14| | NI 9220 Getting Started GuideSingle-Ended ConnectionsConnect the ground signal to COM to keep the signal source within the common-mode voltage range.NI 9220 Connection Guidelines•Make sure that devices you connect to the NI 9220 are compatible with the module specifications.•You must use 2-wire ferrules to create a secure connection when connecting more than one wire to a single terminal on the NI 9220 with spring terminal.NI 9220 Getting Started Guide| © National Instruments| 15•For the NI 9220 with spring terminal, push the wire into the terminal when using a solid wire or a stranded wire with aferrule.•For the NI 9220 with spring terminal, open the terminal by pressing the push button when using stranded wire without a ferrule.High-Vibration Application ConnectionsIf your application is subject to high vibration, NI recommends that you use the NI 9940 backshell kit to protect connections to the NI 9220 with spring terminal.Overvoltage ProtectionThe NI 9220 provides overvoltage protection for each channel.Note Refer to the device datasheet on /manualsfor more information about overvoltage protection.16| | NI 9220 Getting Started GuideWhere to Go NextLocated at /manuals NI 9220 Getting Started Guide | © National Instruments | 17Worldwide Support and ServicesThe NI website is your complete resource for technical support. At /support, you have access to everything from troubleshooting and application development self-help resources to email and phone assistance from NI Application Engineers. Visit /services for NI Factory Installation Services, repairs, extended warranty, and other services.Visit /register to register your NI product. Product registration facilitates technical support and ensures that you receive important information updates from NI.A Declaration of Conformity (DoC) is our claim of compliance with the Council of the European Communities using the manufacturer’s declaration of conformity. This system affords the user protection for electromagnetic compatibility (EMC) and product safety. You can obtain the DoC for your product by visiting /certification. If your product supports calibration, you can obtain the calibration certificate for your product at /calibration.18| | NI 9220 Getting Started GuideNI corporate headquarters is located at11500 North Mopac Expressway, Austin, Texas, 78759-3504. NI also has offices located around the world. For telephone support in the United States, create your service request at /support or dial 1 866 ASK MYNI (275 6964). For telephone support outside the United States, visit the Worldwide Offices section of /niglobal to access the branch office websites, which provide up-to-date contact information, support phone numbers, email addresses, and current events.NI 9220 Getting Started Guide| © National Instruments| 19Refer to the NI Trademarks and Logo Guidelines at /trademarks for information on NI trademarks. Other product and company names mentioned herein are trademarks or trade names of their respective companies. For patents covering NI products/technology, refer to the appropriate location: Help»Patents in your software, the patents.txt file on your media, or the National Instruments Patent Notice at /patents. Y ou can find information about end-user license agreements (EULAs) and third-party legal notices in the readme file for your NI product. Refer to the Export Compliance Information at /legal/export-compliance for the NI global trade compliance policy and how to obtain relevant HTS codes, ECCNs, and other import/ export data. NI MAKES NO EXPRESS OR IMPLIED WARRANTIES AS TO THE ACCURACY OF THE INFORMATION CONTAINED HEREIN AND SHALL NOT BE LIABLE FOR ANY ERRORS. U.S. Government Customers: The data contained in this manual was developed at private expense and is subject to the applicable limited rights and restricted data rights as set forth in FAR 52.227-14, DFAR 252.227-7014, and DFAR 252.227-7015.© 2017 National Instruments. All rights reserved.378023A-01Jan17。
第26卷 第5期2005年5月 半 导 体 学 报CHIN ESE J OURNAL OF SEMICONDUCTORSVol.26 No.5 May ,20053Project supported by System 2Design 2Chip Program of Shanghai Science &Technology Committee (No.037062019)and Shanghai Applied Ma 2terial Funds (No.0425) Tang Zhangwen male ,was born in 1977,assistant professor.His research interest s are in low 2phase 2noise LC 2VCO and RF TV tuner. He Jie male ,was born in 1978,PhD candidate.His research interest is fully 2integrated RF frequency synt hesizers. Received 30October 2004,revised manuscript received 6J anuary 2005ν2005Chinese Institute of ElectronicsAn Accurate 1108GH z CMOS LC V oltage 2Controlled Oscillator 3Tang Zhangwen ,He Jie ,Jian Hongyan ,and Min Hao(S tate Key L aboratory of A S I C &S ystem ,Fudan Universit y ,S hanghai 200433,China )Abstract :An accurate 1108GHz CMOS L C voltage 2controlled oscillator is implemented in a 0135μm standard 2P4M CMOS process.A new convenient method of calculating oscillator period is presented.With this period calculation technique ,the f requency tuning curves agree well with the experiment.At a 313V supply ,the L C 2VCO measures a phase noise of -8212dBc/Hz at a 10k Hz f requency off set while dissipating 311mA current.The chip size is 0186mm×0182mm.K ey w ords :MOS varactor ;L C tank ;voltage 2controlled oscillator ;oscillator tuning curve EEACC :1230BC LC number :TN752 Document code :A Article ID :025324177(2005)05208672061 IntroductionThe explo sive growt h in wireless communica 2tions has driven universities and companies to pro 2duce wireless t ransceivers at low 2co st ,low 2power ,and compact size.Recently ,all of RF component s ,such as low 2noise amplifiers (L NAs ),mixer ,local o scillators (LOs ),and IF filters ,seem possible to be integrated in CMOS scaled technology.On 2chip passive element s such as spiral inductors and va 2ractors make on 2chip implementatio n of L C 2tank voltage 2cont rolled o scillators (VCOs )easy.A complementary cross 2coupled negative 2G mL C 2tank o scillator is shown in Fig.1,which em 2ploys bot h nMOS and pMOS cro ss 2coupled pairs.Many p ublished papers [1~3],have employed t his type of L C 2tank VCO ,but oscillator ’s t uning curves were obtained from SPICE simulations or measurement s.The prediction of oscillator ’s t un 2ing curves is quite challenging due to highly non 2linear characteristics of varactors.A numerical met hod is shown in Ref.[3],but it is quite com 2plex and time 2consuming.The t uning curves must be numerically comp uted again if bias current chan 2ges.Fig.1 CMOS complementary cross 2coupled L C 2tank VCO半 导 体 学 报第26卷In t his paper ,we investigate t he I 2V locus of step 2like MOS varactors in a L C 2VCO and p redict t he t uning curves t hrough t he oscillating period calculation of a serial L C tank in time domain [4,9].An accurate 1108GHz CMOS L C voltage 2con 2t rolled o scillator is implemented in a 0135μm standard 2P4M CMOS process.The t heoretical an 2alyses agree perfectly wit h t he simulation and measurement of a CMOS complementary L C 2tank VCO.2 Circuit designThe complementary cro ss 2coupled negative 2G mL C 2tank voltage 2controlled oscillator in Fig.1hasbeen implemented in 0135μm 2P4M 313V CMOS process.On 2chip spiral inductor is a symmet ric dif 2ferential multilayer inductor.Four metals are paral 2lelly and serially connected wit h a lot of vias to de 2crease t he serial resistor of spiral inductor and in 2crease t he inductance in unit silicon area.And a center 2connected patterned ground shield (P GS )is employed to imp rove quality of inductors at low f requency (1~2GHz )[5].On 2chip differential spiralinductor is 1214n H ,so t he single 2ended inductor feat ures 612n H.The maximum Q arrives seven at 111GHz.The compact equivalent PI model shown in Fig.2is ext racted wit h ASITIC [6].Fig.2 PI model of on 2chip spiral inductorThe transconductances of cross 2couple nMOS and p MOS devices are cho sen to be equal so t hat DC voltage of L C 2tank oscillator is maintained at app roximately V dd /2.First ,t he oscillating wave 2form can have t he maximum swing.Seco ndly ,t he VCO gain (K V )can be decreased and t he p hase 2noise performance can be imp roved.The MOS de 2vices are implemented using t he minimum gatelengt h (0135μm ).The open 2drain nMOS devices are t he outp ut buffers ,which is used to drive t he off 2chip bias 2T circuit s.In order to decrease t he Miller 2effect capacitor ,t he lengt h of open 2drainnMOS devices is 60μm.The lengt hs of current 2mir 2ror are larger t han t he minimum lengt h so t hat t he channel lengt h modulation (CL M )is attenuated and 1/f noise is decreased.Two additio nal inductors ,L1&L2,resonate at double frequency wit h t he parasitic capacitors C1&C2at each common 2source node ,to avoid Q 2deg 2radation by triode region MOS t ransistors in t he stacked differential pairs [7].The filtering capacitor C3is used to low t he 1/f noise and effect of chan 2nel lengt h modulatio n (CL M )[1].3 Frequency tuning characteristic Mo st of varactors used in L C 2tank VCO cir 2cuit s are inversion 2MOS (I 2MOS )and accumula 2tion 2MOS (A 2MOS ).Their characteristics bot h are step 2like ,and have large nonlinearity.The t uning curves of an L C 2VCO will substantially deviate f rom t he ideal curve 1/L C when a step 2like va 2ractor is used [3].Bot h I 2MOS and A 2MOS are step 2like capacitors (Figs.3(b )and (c )).The small 2sig 2nal capacitance is given byC ss (V )=C max , V ≥V eff C min , V <V eff(1)where V eff =V ctrl +V TH is effective cont rol voltage (ECV ).Fig.3 Serial L C 2tank and step 2like varactor (a )Serial L C tank ;(b )Step 2like varactor ;(c )Unit step f unction868第5期Tang Zhangwen et al.: An Accurate 1108GHz CMOS L C Voltage 2Controlled OscillatorThe presence of on 2chip inductors in Fig.1im 2po ses t hat t he DC value of differential o scillating voltages has to be a constant voltage V dc .Neglec 2ting t he tank losses in on 2chip inductors and varac 2tors ,t he half circuit of L C 2tank VCO can be con 2sidered as a serial L C 2tank st ruct ure (Fig.3(a )).The value of inductor is L ,and t he step 2like varac 2tors can be mat hematically represented as belowC ss (V )=12(C max +C min )+ 12(C max -C min )sign (V -V eff )(2) Figure 4shows t he oscillating voltage wave 2forms of t he serial L C tank simulated in HSPICE.Each waveform consist s of two segmentalsinusoidsFig.4 Voltage waveforms of a varactor at different ECVwit h different size ,which join at t he effective con 2t rol voltage (ECV ).Wit h t he ECV f rom low to high ,t here exist four regions as below :(1)When V eff ≤V dc -A min ,t he o scillating waveform is a sinusoid wit h t he minimum ampli 2t ude A min and minimum f requency ωmin ;(2)When V eff ≥V dc +A max ,a sinusoid wit h t he maximum amplit ude A max and maximum frequencyωmax ;(3)When V dc -A min ≤V eff ≤V dc ,two partial si 2nusoids join at ECV.One is over V eff wit h t he am 2plit ude A min and f requency ωmin ;t he ot her is belowV eff wit h t he amplit ude θ1A max (θ1is an ellip se simi 2lar factor ,ESF )and frequency ωmax ;(4)When V dc ≤V eff ≤V dc +A max ,it consist s of two segmental sinusoids joined at ECV.One is a 2bove V eff wit h t he amplit ude θ2A min (θ2is anot her ESF )and frequency ωmin ;t he ot her is below V eff wit h t he amplit ude A max and frequency ωmax .The I 2V locus of a step 2like varactor in t he se 2rial L C 2tank circuit is shown in Fig.5.It consist s oftwo ellip ses of different size joined at t he ECV.The above four regions satisfy t he following ellip 2ses ’equations:Fig.5 I 2V locus of a varactor(1)When V eff ≤V dc -A min ,t he I 2V locus holdsV -V dcA min 2+Iωmin C max A min2=1(3) (2)When V eff ≥V dc +A max ,it holdsV -V dcA max2+Iωmax C min A max2=1(4) (3)When V dc -A min ≤V eff ≤V dc ,two segmentalsinusoids respectively holdV -V dcA min 2+Iωmin C max A min 2=1, V ≥V eff V -V dcA max2+Iωmax C min A max2=θ21, V <V eff (5)where t he ESF θ1satisfies A min /A max ≤θ1≤1.Espe 2cially when V eff =V dc and θ1=1,it satisfiesI max =ωmin C max A min =ωmax C min A max(6)where I max is t he maximum current in t he inductor or varactor.968半 导 体 学 报第26卷(4)When V dc≤V eff≤V dc+A max,two segmen2tal sinusoids respectively holdV-V dc A min 2+Iωmin C max A min2=θ22, V≥V effV-V dc A max 2+Iωmax C min A max2=1, V<V eff(7)where t he ESFθ2satisfies1≤θ2≤A max/A min.The oscillating periods in t he above four re2 gions can be calculated mat hematically.(1)When V eff≤V dc-A min,t he o scillating peri2 od isT=T max=2πL C max(8) (2)When V eff≥V dc+A max,t he o scillating peri2 od isT=T min=2πL C min(9) (3)When V dc-A min≤V eff≤V dc,t he o scillating period is a sum of two intervals,T=T1+T2,as shown in Fig.4.T1is t he time on t he first ellip se; T2is t he time o n t he second ellip se.At t he ECV, t he voltage and current of t he varactor are V eff and I eff.Fro m Eqs.(6),(8),and(9),we obtain t he am2 plit ude ratioA max A min =C maxC min(10)Substit uting Eq.(10)to(5)leads to t he ESFθ1θ1=1-V eff-V dcA min2+V eff-V dcA max2(11)Thus,t he o scillating period is,T=T1+T2=π2+arcsin|V eff-V dc|A minπT max+π2-arcsin|V eff-V dc|θ1A maxπT min=12(T max+T min)+1πarcsin |V eff-V dc|A minT nax-arcsin|V eff-V dc|θ1A max T min(12) (4)When V dc≤V eff≤V dc+A max,similarly to Case(3).Solving Eq.(7),we can obtain t he ESF and o scillating period,θ2=1-V eff-V dcA max2+V eff-V dcA min2(13)T=12(T max+T min)+ 1π-arcsinV eff-V dcθ2A min T max+arcsinV eff-V dcA maxT min(14) To validate t he above met hod of oscillating pe2riod calculation,an ideal L C tank in Fig.3(a)issimulated in HSPICE.It s parameters are L=10n H,C max=4p F,C min=1p F,and A min=015V.InFig.6,t he cross line is t he simulation result inHSPICE,and t he solid line is t he calculation resultf rom Eqs.(12)and(14).The simulation agreeswell wit h t he calculation.Fig.6 Oscillator tuning curve:simulated in SPICE,and calculated by Eqs.(12)and(14)As t he o scillator has a very large signal swing(nearly f ull power supply),t he oscillating period isinterpolated between T max and T min.The resultingf requency2voltage(f2V)curve,which is shown inFig.6,varies linearly wit h ECV in a range definedby t he oscillation amplit ude.Alt hough t he capaci2tance2voltage(C2V)characteristic of MOS varac2tors is step2like,t he f2V curve is well linear.Con2t rary to widely held belief s in Ref.[8],t he linearC2V relationship of MOS varactors is unnecessary.4 Experiment validationFigure7shows t he microp hotograp h of L CVCO in Fig.1.At a313V supply,t he tail current ofL C2VCO is311mA,and t he centre f requency is1108GHz.The oscillator’s t uning curve in Fig.8isobtained by t he measurement of t he f undamentalf requency at different cont rol voltages.On2chip dif2078第5期Tang Zhangwen et al.: An Accurate 1108GHz CMOS L C Voltage 2Controlled Oscillatorferential spiral inductor is 12138n H ,so t he single 2end inductor feat ures 6119n H.The maximum and minimum capacitances in L C 2VCO are 4130p F(C max )and 31180p F (C min ).The maximum and min 2imum f requencies are 11137GHz and 01975GHz re 2spectively.And t he DC voltage is 211V ,t he mini 2mum amplit ude is 0186V ,t he maximum amplit ude is 110V calculated by Eqs.(10).In Fig.8,t he cross lines are t he result s of measurement ,and t he solid lines are calculated by Eqs.(12)and (14).The measurement agrees well wit h t he result s obtained f rom t he t heoretical oscillator t uning curves ’equa 2tions (12)and (14),over t he entire t uningrange.Fig.7 Microphotograph of CMOS L CVCOFig.8 f 2V tuning curve of the measurement and calcu 2lationCOB packaged chip s are measured on a Agi 2lent E4440A (3Hz ~2615GHz )PSA series spec 2t rum analyzer wit h p hase noise module.Figure 9shows a typical p hase noise at 117V cont rol volt 2age.The p hase noise measured at different ECVvoltages ,is shown in Fig.10.The worst p hase noise is -8212dBc/Hz at a 10k Hz f requency off 2set.Fig.9 PhasenoiseFig.10 Phase noise at 10k Hz f requency off set5 ConclusionsAn accurate 1108GHz CMOS L C 2tank voltage 2cont rolled oscillator is implemented in a 0135μm standard 2P4M CMOS process.A new convenient met hod of calculating f requency t uning curves is p ropo sed.The calculated f 2V curves agree perfect 2ly wit h t he experiment.At 313V power supply ,t hep hase noise of t he L C 2VCO is measured to be -8212dBc/Hz at a 10k Hz f requency off set.The tail current is 311mA.Acknow ledgements The aut hors would like to t hank Liu Chenbo ,Y i Wei ,and Jiang Qifeng of Shanghai Research Center for Integrated Circuit Design ,for t he support of M PW service ,and t hank178半 导 体 学 报第26卷Huang Hao,Qian Dahong for chip testing.R eferences[1] Hajimiri A,Lee T H.Design issues in CMOS differential LCoscillators.IEEE J Solid2State Circuit s,1999,34:717[2] Tiebout M.Low2power low2phase2noise differentially tunedquadrature VCO design in standard CMOS.IEEE J Solid2State Circuit s,2001,36:1018[3] Levantino S,Samori C,Bonfanti A,et al.Frequency depend2ence on bias current in52GHz CMOS VCOs:impact on tuningrange and flicker noise upconversion.IEEE J Solid2State Cir2cuit s,2002,37:1003[4] Tang Zhangwen,He Jie,Jian Hongyan,et al.Prediction ofLC2VCOs’tuning curves wit h period calculation technique.IEEE Asia Sout h Pacific Design Automation Conference,Shanghai,China,2005[5] Yue C P,Wong S S.On2chip spiral inductors wit h patternedground shields for Si2based RF IC’s.IEEE J Solid2State Cir2 cuit s,1998,33:743[6] http:∥/~niknejad/asitic.ht ml[7] Hegazi E,Sjoland H,Abidi A A.A filter technique to lowerLC oscillator phase noise.IEEE J Solid2State Circuit s,2001,36:1921[8] Svelto F,Erratico P,Manzihi S,et al.A metal2oxide2semicon2ductor varactor.IEEE Electron Device Lett,1999,20:164 [9] Tang Zhangwhen.LC voltage2controlled oscillators.PhD dis2sertation of Fudan University,2004精确的1108GH z CMOS电感电容压控振荡器3唐长文 何 捷 菅洪彦 闵 昊(复旦大学专用集成电路与系统国家重点实验室,上海 200433)摘要:在0135μm2P4M标准CMOS工艺上,设计了一个精确的1108GHz CMOS电感电容压控振荡器.提出了一种有效计算压控振荡器周期的新方法,采用该方法计算的频率2电压调谐曲线与实验结果吻合得很好.在电源电压313V下,消耗电流311mA,压控振荡器的相位噪声在10k Hz频偏处为-8212dBc/Hz.芯片面积为0186mm×0182mm.关键词:MOS管可变电容;电感电容回路;压控振荡器;振荡调谐曲线EEACC:1230B中图分类号:TN752 文献标识码:A 文章编号:025324177(2005)05208672063上海市科学技术委员2003年度集成电路设计科技专项(批准号:037062019)和上海应用材料研究与发展基金(批准号:0425)资助项目 唐长文 男,1977年出生,助理研究员,主要研究方向为低相位噪声电感电容压控振荡器和CMOS射频电视调谐器. 何 捷 男,1978年出生,博士研究生,主要研究方向为全集成射频频率综合器设计. 2004210230收到,2005201206定稿ν2005中国电子学会278。
Technical DataFluke 1555 and 1550C Insulation Resistance TestersFluke insulation testers can now conduct the entire range of test voltages specified in IEEE 43-2000 with a best in class, 3 yearwarranty and CAT IV 600 V safety rating. With measurement storage and PC interface, the 1555 and 1550C are perfect tools for pre-ventative or predictive maintenance programs designed to identify potential equipment failures before they occur.Features include:• Test voltages to up 10 kV provides solutions for all applications • CAT III 1000 V, CAT IV 600 V safety rating• Warning function alerts the user that line voltage is present andgives the voltage reading up to 600 V ac or dc for increased user safety• Selectable test voltages in 50 V steps from 250 V to 1000 V, and 100 V steps above 1000 V• Measurements can be stored in up to 99 memory locations, with each location assigned a unique, user defined, label for easy recall• Long battery life gives the user over 750 tests between charges • Automatic calculation of Dielectric Absorption (DAR) and Polarization Index (PI) with no additional setup• Guard system eliminates the effect of surface leakage current on high-resistance measurements• Large digital/analog LCD for easy viewing• Capacitance and leakage current measurement • Ramp function for breakdown testing • Resistance measurements up to 2TΩ• Timer settings up to 99 minutes for timed tests • 3-year warrantyDigital insulation testing up to 10 kVThe new Fluke 1555 and redesigned Fluke1550C insulation resistance testers, offer digital insulation testing up to 10 kV, making them ideal for testing a wide range of high voltage equipment including switchgear, motors, generators and cables.19812 Fluke Corporation Fluke 1555 and 1550C Insulation Resistance TestersFluke CorporationPO Box 9090, Everett, WA USA 98206Fluke Europe B.V.PO Box 1186, 5602 BD Eindhoven, The NetherlandsFor more information call:In the U.S.A. (800) 443-5853 or Fax (425) 446-5116In Europe/M-East/Africa +31 (0) 40 2675 200 or Fax +31 (0) 40 2675 222In Canada (800)-36-FLUKE or Fax (905) 890-6866From other countries +1 (425) 446-5500 or Fax +1 (425) 446-5116Web access: ©2005-2010 Fluke Corporation.Specifications subject to change without notice. Printed in U.S.A. 10/2010 1629685G D-EN-N Modification of this document is not permitted without written permission from Fluke Corporation.Fluke. Keeping your world up and running.Ordering information1550C 5 kV Insulation Tester 1555 10 kV Insulation Tester 1550C/Kit 5 kV Insulation Tester Kit 1555/Kit 10 kV Insulation Tester KitOptional accessoriesTL1550EXT 25 foot extendedtest lead setIncluded accessoriesTest Cables with Alligator Clips (red, black, green)Infrared adapter with interface cable FlukeView Forms Basic CD-ROM AC Power CordSoft Carrying Case (base models only)English ManualUsers Manual on CD-ROM Quick Reference CardSoftware License Agreement Registration CardFlukeView Forms Installation Guide USB-IR Cable Installation Guide IP67 Hard Case (kit only)Certificate of Calibration (kit only)Ruggedized Alligator Clips (kit and 1555 only)Software specification sFluke ViewForms basic softwarerequires a PC running Windows 2000, Windows XP and Windows Vista.SpecificationsElectrical specificationsThe tester’s accuracy is specified for one year after calibration at operating temperatures of 0 °C to 35 °C. For operating temperatures outside the range (-20 °C to 0 °C and 35 °C to 50 °C), add ± .25 % per °C, except on the 20 % bands add ± 1 % per °C.Insulation resistance measurementTest voltage (dc)RangeAccuracy (± reading)250 V< 200 kΩ200 kΩ to 5 GΩ5 GΩ to 50 GΩ> 50 GΩunspecified 5 %20 %unspecified 500 V< 200 kΩ200 kΩ to 10 GΩ10 GΩ to 100 GΩ> 100 GΩunspecified 5 %20 %unspecified 1000 V< 200 kΩ200 kΩ to 20 GΩ20 GΩ to 200 GΩ> 200 GΩunspecified 5 %20 %unspecified 2500 V< 200 kΩ200 kΩ to 50 GΩ50 GΩ to 500 GΩ> 500 GΩunspecified 5 %20 %unspecified 5000 V< 200 kΩ200 kΩ to 100 GΩ100 GΩ to 1 TΩ> 1 TΩunspecified 5 %20 %unspecified 10000 V (1555 Only)< 200 kΩ200 kΩ to 200 GΩ200 GΩ to 2 TΩ> 2 TΩunspecified 5 %20 %unspecifiedBar graph range0 to 1 TΩInsulation test voltage accuracy -0 %, +10 % at 1 mA load current Induced ac mains current rejection 2 mA maximum Charging rate for capacitive load5 seconds per μF Discharge rate for capacitive load 1.5 s/μFRangeAccuracyLeakage current measurement1 nA to2 mA ± (5 % + 2 nA)Capacitance measurement 0.01 uF to 15.00 μF ± (15 % rdg + 0.03 μF)TimerRangeResolution0 to 99 minutesSetting: 1 minute Indication: 1 second Live circuit warningWarning rangeVoltage accuracy 30 V to 660 V ac/dc, 50/60 Hz± (15 % + 2 V)General specifications。
元器件交易网IMPORTANT NOTICETexas Instruments and its subsidiaries (TI) reserve the right to make changes to their products or to discontinueany product or service without notice, and advise customers to obtain the latest version of relevant informationto verify, before placing orders, that information being relied on is current and complete. All products are soldsubject to the terms and conditions of sale supplied at the time of order acknowledgement, including thosepertaining to warranty, patent infringement, and limitation of liability.TI warrants performance of its semiconductor products to the specifications applicable at the time of sale inaccordance with TI’s standard warranty. Testing and other quality control techniques are utilized to the extentTI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarilyperformed, except those mandated by government requirements.CERTAIN APPLICATIONS USING SEMICONDUCTOR PRODUCTS MAY INVOLVE POTENTIAL RISKS OFDEATH, PERSONAL INJURY, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE (“CRITICALAPPLICATIONS”). TI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, AUTHORIZED, ORWARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT DEVICES OR SYSTEMS OR OTHERCRITICAL APPLICATIONS. INCLUSION OF TI PRODUCTS IN SUCH APPLICATIONS IS UNDERSTOOD TOBE FULLY AT THE CUSTOMER’S RISK.In order to minimize risks associated with the customer’s applications, adequate design and operatingsafeguards must be provided by the customer to minimize inherent or procedural hazards.TI assumes no liability for applications assistance or customer product design. TI does not warrant or representthat any license, either express or implied, is granted under any patent right, copyright, mask work right, or otherintellectual property right of TI covering or relating to any combination, machine, or process in which suchsemiconductor products or services might be or are used. TI’s publication of information regarding any thirdparty’s products or services does not constitute TI’s approval, warranty or endorsement thereof.Copyright © 1999, Texas Instruments Incorporated。
修订版 1.0 版权所有 © 2014 Silicon LaboratoriesSi4438-C特点应用说明Silicon Laboratories 的Si4438为高性能的低电流收发器,可覆盖从425至 525MHz 的次千兆赫频段。
Si4438 针对中国智能仪表市场,特别适合于智能电表。
该设备的覆盖区及引脚与 Si446x 无线电兼容,可为全世界的次千兆赫应用提供行业领先的性能。
无线电设备是 EZRadioPRO ®产品系列的一部分,包括全套发射器、接收器和收发器的产品线,涵盖各种应用。
所有零件都具有杰出的灵敏度—124dBm ,可同时实现极低的有效电流和待机电流消耗。
12.5kHz 通道 58dB 相邻通道选择性的间距确保了严苛 RF 条件下的可靠接收操作。
Si4438 可提供超常的高达 +20dBm 具有显著 TX 效率的输出功率。
高输出功率和灵敏度实现了业界领先的144dB 链路预算,实现了范围扩展和高度可靠的通信链路。
⏹频率范围=425–525MHz ⏹接收灵敏度=–124dBm ⏹调制● (G)FSK ● OOK⏹最大输出功率● +20dBm⏹低活动功耗● 14mA RX⏹超低电流断电模式● 30nA 关机,40nA 待机⏹数据传输率=100 bps 到 500kbps⏹前导探测模式● 6在 1.2kbps 时 mA 平均 Rx 电流⏹快速唤醒和跳数⏹电源=1.8 至 3.8V⏹出色的选择性能● 58dB 相邻通道● 1MHz 处阻断增益为 75dB⏹天线分集和 T/R 开关控制⏹高度可配置的分组处理程序⏹TX 和 RX64 字节 FIFO⏹自动频率控制 (AFC)⏹自动增益控制 (AGC)⏹低 BOM⏹低电量探测器⏹温度传感器⏹20 引脚 QFN 封装⏹IEEE 802.15.4g 就绪⏹适合中国调控(国家电网)⏹中国智能仪表专利申请中Si4438-C功能框图Product Freq. Range Max Output Power TX Current RX Current Si4438425–525MHz+20dBm75mA13.7mASi4438-C修订版 1.03目录章节页码1. 电气规格 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .42. 功能描述 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .113. 控制器接口 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .123.1. 串行外围接口 (SPI) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .123.2. 快速响应寄存器 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .143.3. 工作模式和计时 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .143.4. 应用程序编程接口 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .183.5. 中断 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .183.6. GPIO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .184. 调制和硬件配置选项 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .194.1. 调制类型 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .194.2. 硬件配置选项 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .194.3. 前导长度 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .215. 内部功能块 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .235.1. RX 链 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .235.2. RX 调制解调器 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .235.3. 合成器 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .255.4. 发送器(TX ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .275.5. 晶体振荡器 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .296. 数据处理和分组处理程序 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .316.1. RX 和 TX FIFO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .316.2. 分组处理程序 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .327. RX 调制解调器配置 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .338. 辅助块 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .338.1. 唤醒定时器和 32kHz 时钟源 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .338.2. 低占空比模式(自动 RX 唤醒) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .338.3. 温度、电池电压和辅助 ADC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .348.4. 低电量探测器 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .358.5. 天线分集 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .358.6. 前导探测模式 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .359. 引脚描述:Si4438-C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3710. 订购信息 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3911. 封装外形:Si4438 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4012. PCB 焊盘图案:Si4438 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4113. 顶部标记 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4313.1. Si4438 顶部标记 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4313.2. 顶部标记说明 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .43联系信息 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .44Si4438-C1. 电气规格Table 1. DC Characteristics *Parameter Symbol Test ConditionMin Typ Max Unit Supply Voltage RangeV DD 1.8 3.3 3.8V Power Saving ModesI Shutdown RC Oscillator, Main Digital Regulator, and Low Power Digital Regulator OFF —30—nA I Standby Register values maintained and RCoscillator/WUT OFF —40—nA I SleepRC RC Oscillator/WUT ON and all register valuesmaintained, and all other blocks OFF —740—nA I SleepXO Sleep current using an external 32kHz crystal.— 1.7—µA I Sensor -LBD Low battery detector ON, register values maintained, and all other blocks OFF —1—µA I ReadyCrystal Oscillator and Main Digital Regulator ON,all other blocks OFF— 1.8—mA Preamble Sense Mode CurrentI psm Duty cycling during preamble search,1.2kbps, 4 byte preamble —6—mA I psmFixed 1s wakeup interval, 50kbps, 5 bytepreamble—10—µA TUNE Mode Current I Tune_RX RX Tune —7.6—mA I Tune_TX TX Tune —7.8—mA RX Mode Current I RXH —13.7—mA TX Mode Current (Si4438)I TX_+20+20dBm output power, class-E match, 490MHz,3.3V—75—mA*Note: All minimum and maximum values are guaranteed across the recommended operating conditions of supply voltageand from –40 to +85°C unless otherwise stated. All typical values apply at VDD =3.3V and 25°C unless otherwise stated.Si4438-CTable 2. Synthesizer AC Electrical Characteristics1Parameter Symbol Test Condition Min Typ Max UnitF SYN425—525MHz Synthesizer FrequencyRange (Si4438)F RES-525425–525MHz—14.3—Hz Synthesizer FrequencyResolution2—50—µs Synthesizer Settling Time t LOCK Measured from exiting Ready mode withXOSC running to any frequency.Including VCO Calibration.Phase Noise Lφ(f M)∆F=10kHz, 460MHz—–109—dBc/Hz∆F=100kHz, 460MHz—–111—dBc/Hz∆F=1MHz, 460MHz—–131—dBc/Hz∆F=10MHz, 460MHz—–141—dBc/HzNotes:1.All minimum and maximum values are guaranteed across the recommended operating conditions of supply voltage andfrom –40 to +85°C unless otherwise stated. All typical values apply at VDD=3.3V and 25°C unless otherwise stated.2. Default API setting for modulation deviation resolution is double the typical value specified.Si4438-CTable 3. Receiver AC Electrical Characteristics 1ParameterSymbol Test ConditionMin Typ Max Unit RX Frequency Range (Si4438)F RX 425—525MHz RX Sensitivity 2P RX_0.5(BER < 0.1%)(500bps, GFSK, BT =0.5,∆f =±250Hz)2—–124—dBmP RX_40(BER < 0.1%)(40kbps, GFSK, BT =0.5,∆f =±20kHz)2—–108—dBmP RX_100(BER < 0.1%)(100kbps, GFSK, BT =0.5,∆f =±50kHz)1—–104—dBmP RX_9.6(BER < 0.1%)(9.6kbps, GFSK, BT =0.5,∆f =±4.8kHz)2—–114—dBmP RX_OOK(BER < 0.1%, 4.8kbps, 350kHz BW,OOK, PN15 data)2—–108—dBm (BER < 0.1%, 40kbps, 350kHz BW,OOK, PN15 data)2—–102—dBm (BER < 0.1%, 120kbps, 350kHz BW,OOK, PN15 data)2—–98—dBm RX Channel Bandwidth BW 1.1—850kHz RSSI Resolution RES RSSI —±0.5—dB ±1-Ch Offset Selectivity, 450MHz 2C/I 1-CHDesired Ref Signal 3dB above sensitivity, BER < 0.1%. Interferer is CW, and desired is modulated with2.4kbps∆F =1.2kHz GFSK with BT =0.5, RXchannel BW =4.8kHz, channel spacing =12.5kHz —–60—dBBlocking 1MHz Offset 21M BLOCK Desired Ref Signal 3dB above sensitivity, BER =0.1%. Interferer is CW, and desired is modulated with2.4kbps,∆F =1.2kHz GFSK with BT =0.5,RX channel BW =4.8kHz —–77—dB Blocking 8MHz Offset 28M BLOCK—–84—dBImage RejectionIm REJRejection at the image frequency.IF =468kHz—40—dBNotes:1.All minimum and maximum values are guaranteed across the recommended operating conditions of supply voltage andfrom –40 to +85°C unless otherwise stated. All typical values apply at VDD =3.3V and 25°C unless otherwise stated.2. Measured over 50000 bits using PN9 data sequence and data and clock on GPIOs. Sensitivity is expected to be betterif reading data from packet handler FIFO especially at higher data rates.Si4438-CTable 4. Transmitter AC Electrical Characteristics1Parameter Symbol Test Condition Min Typ Max Unit TX FrequencyRangeF TX425—525MHz(G)FSK Data Rate2DR FSK0.1—500kbps OOK Data Rate2DR OOK0.1—120kbps Modulation DeviationRange∆f525425–525MHz—750—kHz Modulation DeviationResolution3F RES-525425–525MHz—14.3—HzOutput Power Range4P TXTypical range at 3.3Vwith class E match optimized for bestPA efficiency.–20—+20dBmTX RF Output Steps∆PRF_OUT Using Class E match within 6dB of maxpower—0.25—dBTX RF Output LevelVariation vs. Temperature∆P RF_TEMP–40 to +85︒C— 2.3—dB TX RF Output LevelVariation vs. Frequency∆P RF_FREQ—0.6—dBTransmit ModulationFiltering B*T Gaussian Filtering Bandwith TimeProduct—0.5—Notes:1.All minimum and maximum values are guaranteed across the recommended operating conditions of supply voltage andfrom –40 to +85°C unless otherwise stated. All typical values apply at VDD=3.3V and 25 °C unless otherwise stated.2. The maximum data rate is dependent on the XTAL frequency and is calculated as per the formula:Maximum Symbol Rate=Fxtal/60, where Fxtal is the XTAL frequency (typically 30MHz).3. Default API setting for modulation deviation resolution is double the typical value specified.4. Output power is dependent on matching components and board layout.Si4438-CTable 5. Auxiliary Block Specifications 1ParameterSymbol Test ConditionMin Typ Max Unit Temperature Sensor SensitivityTS S—4.5—ADC Codes/°C Low Battery Detector ResolutionLBD RES —50—mV Microcontroller ClockOutput Frequency Range 2F MCConfigurable to Fxtal or Fxtal divided by 2, 3, 7.5, 10, 15, or 30 where Fxtal is the reference XTAL frequency. In addition, 32.768kHz is also supported.32.768K—FxtalHzTemperature Sensor Conversion TEMP CT Programmable setting—3—ms XTAL Range 3XTAL Range25—32MHz 30MHz XTAL Start-Up Timet 30MUsing XTAL and board layout in reference design. Start-up time will vary with XTAL type andboard layout.—300—µs30MHz XTAL Cap Resolution30M RES —70—fF 32kHz XTAL Start-Up Time t 32k —2—sec 32kHz Accuracy using Internal RC Oscillator 32KRC RES—2500—ppm POR Reset Timet POR——6msNotes:1.All minimum and maximum values are guaranteed across the recommended operating conditions of supply voltage andfrom –40 to +85°C unless otherwise stated. All typical values apply at V DD =3.3V and 25°C unless otherwise stated.2. Microcontroller clock frequency tested in production at 1MHz, 30MHz, 32MHz, and 32.768kHz. Other frequenciestested in bench characterization.3. XTAL Range tested in production using an external clock source (similar to using a TCXO).Si4438-CTable 6. Digital IO Specifications (GPIO_x, SCLK, SDO, SDI, nSEL, nIRQ, SDN)1Parameter Symbol Test Condition Min Typ Max Unit Rise Time2,3T RISE0.1x V DD to 0.9x V DD,C L=10pF,DRV<1:0>=LL— 2.3—nsFall Time3,4T FALL0.9x V DD to 0.1x V DD,C L=10pF,DRV<1:0>=LL—2—nsInput Capacitance C IN—2—pF Logic High Level Input Voltage V IH V DD x0.7——V Logic Low Level Input Voltage V IL——V DD x0.3V Input Current I IN0<V IN< V DD–1—1µA Input Current If Pullup is Activated I INP V IL=0V1—4µADrive Strength for Output Low Level I OmaxLL DRV[1:0]=LL3— 6.66—mA I OmaxLH DRV[1:0]=LH3— 5.03—mA I OmaxHL DRV[1:0]=HL3— 3.16—mA I OmaxHH DRV[1:0]=HH3— 1.13—mADrive Strength for Output High Level I OmaxLL DRV[1:0]=LL3— 5.75—mA I OmaxLH DRV[1:0]=LH3— 4.37—mA I OmaxHL DRV[1:0]=HL3— 2.73—mA I OmaxHH DRV[1:0]=HH3—0.96—mADrive Strength for Output High Level for GPIO0I OmaxLL DRV[1:0]=LL3— 2.53—mA I OmaxLH DRV[1:0]=LH3— 2.21—mA I OmaxHL DRV[1:0]=HL3— 1.7—mA I OmaxHH DRV[1:0]=HH3—0.80—mALogic High Level Output Voltage V OH DRV[1:0]=HL V DD x0.8——V Logic Low Level Output Voltage V OL DRV[1:0]=HL——V DD x0.2V Notes:1.All minimum and maximum values are guaranteed across the recommended operating conditions of supply voltageand from –40 to +85°C unless otherwise stated. All typical values apply at V DD=3.3V and 25°C unless otherwise stated.2. 6.7ns is typical for GPIO0 rise time.3. Assuming VDD=3.3V, drive strength is specified at Voh (min)=2.64V and Vol(max)=0.66V at room temperature.4. 2.4ns is typical for GPIO0 fall time.Si4438-CTable 7. Thermal Operating CharacteristicsParameterValue Unit Operating Ambient Temperature Range T A –40 to +85︒C Thermal Impedance θJA 25︒C /W Junction Temperature T JMAX +105︒C Storage Temperature Range T STG–55 to +150︒CTable 8. Absolute Maximum Ratings*ParameterValue Unit V DD to GND–0.3, +3.8V Instantaneous V RF-peak to GND on TX Output Pin –0.3, +8.0V Sustained V RF-peak to GND on TX Output Pin –0.3, +6.5V Voltage on Digital Control Inputs –0.3, V DD + 0.3 V Voltage on Analog Inputs–0.3, V DD + 0.3V Voltage on XIN Input when using a TCXO –0.7, V DD + 0.3V RX Input Power+10dBm*Note: Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. Theseare stress ratings only and functional operation of the device at or beyond these ratings in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Power Amplifier may be damaged if switched on without proper load or termination connected. TX matching network design will influence TX V RF-peak on TX output pin. Caution: ESD sensitive device.2. 功能描述Si4438 设备为高性能低电流的无线 ISM 收发器,可覆盖次千兆赫波段。
A 5.9-GHz V oltage-Controlled Ring Oscillator in 0.18- m CMOSYalcin Alper Eken ,Student Member,IEEE,and John P.Uyemura ,Senior Member,IEEEAbstract—This paper presents the design of three-and nine-stage voltage-controlled ring oscillators that were fabricated in TSMC0.18-m CMOS technology with oscillation frequencies up to 5.9GHz.The circuits use a multiple-pass loop architecture and delay stages with cross-coupled FETs to aid in the switching speed and to improve the noise parameters.Measurements show that the oscillators have linear frequency-voltage characteristics over a wide tuning range,with the three-and nine-stage rings resulting in frequency ranges of 5.16–5.93GHz and 1.1–1.86GHz,respectively.The measured phase noise of the nine-stage ring oscillator was 105.5dBc/Hz at a 1-MHz offset from a 1.81-GHz center frequency,whereas the value for the three-stage ring oscillator was simulated to be 99.5dBc/Hz at a 1-MHz offset from a 5.79-GHz center frequency.Index Terms—CMOS,LC oscillators,multiple-pass architec-ture,phase-locked loop (PLL),phase noise,ring oscillators,VLSI,voltage-controlled oscillators (VCOs).I.I NTRODUCTIONTHE phase-locked loop (PLL)is a critical component in many high-speed systems as it provides the timing basis for functions such as clock control,data recovery,and synchro-nization.The voltage-controlled-oscillator (VCO)is perhaps the most crucial element of the PLL because it directly provides the output signal of the PLL.A CMOS VCO can be built using ring structures,relaxation circuits,or an LC resonant circuit.The LC design has the best noise and frequency performance owing to the large quality factor Q achievable with resonant networks [1].However,adding high-quality inductors to a CMOS process flow increases the cost and complexity of the chip,and also in-troduces problems such as the control of eddy currents.Ring oscillators,on the other hand,can be built in any standard CMOS process and may require less die area than LC designs.The design is straightforward,and ring architectures can be used to provide multiple output phases and wide tuning ranges.In this brief,we present a design that improves the overall characteristics of CMOS ring oscillators to be com-parable to those of LC designs.The prototype circuits were implemented in a standard TSMC0.18-m non-epi CMOS process,and achieved maximum oscillation frequencies up to 5.9GHz with linear frequency–voltage characteristics.The architecture of multiple-pass ring oscillators and the use of saturated gain stages to increase the frequency and voltage swing at the output are examined in Section II.Details of the design and measurement of the prototype circuits are presentedManuscript received November 21,2002;revised July 24,2003.This work was supported by Integrated Device Technology,Inc.The authors are with the School of Electrical and Computer Engineering,Georgia Institute of Technology,Atlanta,GA 30332-0250USA (e-mail:eken@).Digital Object Identifier10.1109/JSSC.2003.820869Fig.1.N -stage multiple-pass ring oscillator.in Section III,along with a comparison of the results with other published circuits.II.M ULTIPLE -P ASS R ING O SCILLATORSW ITH S ATURATED S TAGESBecause of the frequency limitations of a single-loop ring oscillator,other architectural techniques are necessary to ex-plore the maximum frequency levels of ring oscillators.Some of these techniques include the use of subfeedback loops [2],output-interpolation methods [3],multiple-feedback loops [4],and dual-delay paths [5],[6].The multiple-pass loop architecture,which is shown in Fig.1foran -stage ring,is the basic architecture chosen in this work.This technique adds auxiliary feedforward loops that work in conjunction with the main loop.The main idea is to reduce the delay of the stages below the smallest delay that is pos-sible inside a simple ring oscillator loop.This is achieved byadding a set of secondaryinputs,and ,to every stage and switching these earlier than the primary inputs during the operation.Although the illustration is for an oscillator with an odd number of stages with the feedforward loops passing over a single stage,other configurations are possible to obtain a dif-ferent frequency increase or decrease.It is important to note that the majority of the frequency-in-crease techniques discussed above [2],[4]–[6]depends on the use of intercoupled feedback loops to increase the maximum frequency,similar to the multiple-pass loop architecture used in this work.Basically,all of these methods are fundamentally same and they are based on a one-dimensional variation of the coupled-oscillator structure introduced in [7]and discussed as the look-ahead ring oscillator in [8].Changing the architecture increases the oscillation frequency,but phase noise and jitter are also important considerations.Many ring oscillators use analog gain stages,but biasing the transistors into continuous conduction increases their contribution to the total noise.To overcome this problem,the gain transistors can be periodically switched in and out of0018-9200/04$20.00©2004IEEEFig.2.Saturated gain stage with cross-coupled PMOS transistors.conduction,which reduces the noise.The reduction of the noise by switching is shown by [5]as(1)where is the output noise power of the oscil-lator that incorporatesswitching,is the output noise power if there was no switching,andis the conducting time of the transistors in aperiod .Another problem with using standard gain stages is the output signal amplitudes that are much smaller than rail-to-rail rger signal levels correspond to better noise performance because the noise per-formance of a system is expressed by using signal-to-noise-ratio (SNR)values instead of the absolute noise power values.These imply that the best characteristics are obtained with a full-rail output signal.A design that provides both of these characteristics is the sat-urated gain stage with regenerative cross-coupled PMOS tran-sistors as shown in Fig.2[5].This provides for rail-to-rail output signals and full switching of the FETs in the stage.From a qual-itative viewpoint,it can be seen that the feedback properties of the latching transistors M1and M2speed up the signal transi-tions at the output.This improves both the oscillation frequency and the noise performance of the VCO.The stage also avoids the use of cascode connections and a tail current-source tran-sistor that would limit the signal swing and add more noise to the output.III.P ROTOTYPE O SCILLATOR D ESIGNSA primary goal of the research was to explore the maximum frequency limitations and noise performance levels of ring VCOs built in a standard CMOS process.To this end,three-and nine-stage multiple-pass ring oscillators were designed and fabricated using a non-epi TSMC0.18-m CMOS processwith a power supply valueofV .The circuits were designed with MOSIS SCMOS rules that required a minimum drawn channel length of0.20m.The test chip also included other circuits such as an integrated LC oscillator,charge pump prototypes,and phase-frequency detector networks,but these are not discussed in this brief.The prototype oscillators employ the saturated stage design given in Fig.2with the transistor ratios provided on the figure.The delay of the stage,and thus,the VCO frequency,iscon-Fig.3.Frequency –voltage characteristics of (a)the three-and (b)the nine-stage ring oscillator.trolled by altering the strength of the latch using the control ter-minalthat is connected to the NMOS switches M3and M4.Higher control voltages result in a stronger coupling be-tween M1and M2,making it more difficult to switch the output voltage,and hence decreasing the frequency.Hwang [9]uses a similar method to control the VCO frequency.Two pairs of in-puts are used to adapt the stage to a multiple-pass architecture.To ease the requirements on the needed testing equipment,high-speed current-mode-logic (CML)buffers and frequency dividers were used to divide the frequency of the oscillators from 1/2to 1/64of their actual value.The output of the divider circuits is then fed to a high-speed driver chain to the output pads for measurement.The performance of the three-stage multiple-pass design was simulated and measured with the results given in Fig.3(a).Spectre simulations of the oscillator predicted an operation range of 5.18–6.11GHz for control voltages of 0.3–1.8V .The measured silicon output was from 5.16GHz up to 5.93GHz,indicating a maximum difference of 3.7%with the simulations.The peaking of the simulated characteristics is attributed to the limitations of the simulator tool in the subthreshold region.Removing test circuitry and reducing the drawn channel length to0.18m predicts a maximum oscillation frequency of 7.7GHz as shown in the plot.The nine-stage multiple-pass ring oscillator employed the same gain stage as that used in the three-stage design.The fre-quency –voltage curves shown in Fig.3(b)were extracted fromFig.4.(a)Phase noise of the three-and nine-stage ring oscillators extracted from Spectre RF simulations.(b)Power spectrum at the divide-by-two output of the nine-stage oscillator.simulations and measurements and show good agreement with a maximum difference of4%.When the control voltages were varied between0.3and1.8V,the measured and the simulated frequency ranges were1.1–1.86GHz and1.16–1.93GHz, respectively.It should be noted that the frequency range of a multiple-pass architecture does not scale linearly with the number of stages.The phase noise values were estimated using SpectreRF simulations and the published techniques that apply to this type of stage design.As illustrated in Fig.4(a),simulations predicted the phasenoiseofthethree-stagedesignas99.5dBc/Hzata1-MHz offset from a5.79-GHz center frequency,whereas the value for the nine-stage design was112.84dBc/Hz at a1-MHz offset from a1.82-GHz center frequency.Simulations also showed that the dividers and buffers have negligible contribution to the output phase noise.Dai’s equation[10]gives the single-sideband phase noise for oscillators with clipped signalsaswhere(2)where is the single-sideband phasenoise,is the excessnoisefactor,is the maximum output slewrate,is theangular frequency offset from the centerfrequencyisFig.5.Maximum frequencies versus minimum channellength.Fig.6.Phase noise versus minimum channel length.the thermalenergy,is the power supply voltage,and is theequivalent output resistance of a delay ing this equation,the phase noise of the three-and nine-stage multiple-pass ringoscillators was calculated to be95.05dBc/Hz and120.99dBc/Hz,respectively,at the same offset and center frequenciesas given in the simulation results.The large difference for thenine-stage design is accounted to the additional noise sourcesbecause of the increase in the number of stages.This couldbe compensated by using a larger excess noisefactor in theequations.Fig.4(b)shows the measured power spectrum at the di-vide-by-two output of the nine-stage design.The phase noiseof the nine-stage design was extracted as105.5dBc/Hz ata1-MHz offset from a1.81-GHz center frequency;this valueaccounts for the bandwidth of the input low-pass filter ofthe spectrum analyzer and the division factor.Supply/grounddisturbances and flicker noise sources,which were ignored inthe calculations and simulations,are considered to be the mainsources of the difference between the measurements and theestimations.In an effort to compare the oscillators’performance,twoscatter plots were created using designs published in the openliterature.Fig.5shows the maximum oscillator frequency asa function of the minimum CMOS feature size,and Fig.6provides information on the phase noise.The points weremeasured,calculated/simulated,or taken from the referencedpapers.To provide consistency in the comparison,phase noisedata from the papers were scaled to a1-MHz offset from thecenter frequencies with an assumed 20-dB/decade drop.The maximum frequency values for circuits with the present design were obtained from Spectre/HSPICE simulations,with the exception of the measured values cited for the0.18-m points.The simulation results showed that the three-stage circuit is capable of oscillation frequencies up to 4.5and 12GHz in0.25-m and0.13-m processes,respectively.IV .C ONCLUSIONWe have demonstrated the use of a multiple-pass loop ring oscillator architecture with latching saturated gain stages as a technique for achieving high-frequency CMOS VCO circuits.The performance curves show that the design can be extrapo-lated to other processes with good results.The attractive fea-tures of this approach are the simplicity of the design and the fact that rings can be implemented in any CMOS process.The results of this study suggest that it is not always necessary to resort to integrated LC networks for high-frequency VCO/CCO modules,but that simpler ring designs may suffice.A CKNOWLEDGMENTThe authors would like to thank B.Butka,D.McDonagh,P.Murtagh,and P.Platt of the IDT Atlanta Design Center for their help in the design and testing,and B.Terlemez of Georgia Tech for his contributions to the chip project.R EFERENCES[1] B.Razavi,“A study of phase noise in CMOS oscillators,”IEEE J.Solid-State Circuits ,vol.31,pp.331–343,Mar.1996.[2]L.Sun,T.Kwasniewski,and K.Iniewski,“A quadrature output voltagecontrolled ring oscillator based on three-stage subfeedback loops,”in Proc.Int.Symp.Circuits and Systems ,vol.2,Orlando,FL,1999,pp.176–179.[3]Y .Sugimoto and T.Ueno,“The design of a 1V ,1GHz CMOS VCOcircuit with in-phase and quadrature-phase outputs,”in Proc.Int.Symp.Circuits and Systems ,vol.1,Hong Kong,1997,pp.269–272.[4] D.-Y .Jeong,S.-H.Chai,W.-C.Song,and G.-H.Cho,“CMOS cur-rent-controlled oscillators using multiple-feedback loop architectures,”in IEEE Int.Solid-State Circuits Conf.Dig.Tech.Papers ,1997,pp.386–387.[5] C.H.Park and B.Kim,“A low-noise,900-MHz VCO in 0.6- mCMOS,”IEEE J.Solid-State Circuits ,vol.34,pp.586–591,May 1999.[6]S.-J.Lee, B.Kim,and K.Lee,“A novel high-speed ring oscil-lator for multiphase clock generation using negative skewed-delay scheme,”IEEE J.Solid-State Circuits ,vol.32,pp.289–291,Feb.1997.[7]J.Maneatis and M.Horowitz,“Precise delay generation using coupledtransistors,”IEEE J.Solid-State Circuits ,vol.28,pp.1273–1282,Dec.1993.[8],“Multiple interconnected ring oscillator circuit,”U.S.Patent 5,475,344,Dec.12,1995.[9]I.-C.Hwang and S.-M.Kang,“A self regulating VCO with supply sen-sitivity of <0.15%-delay/1%-supply,”in IEEE Int.Solid-State Circuits Conf.Dig.Tech.Papers ,2002,pp.140–141.[10]L.Dai and R.Harjani,“Design of low-phase-noise CMOS ring-oscilla-tors,”IEEE Trans.Circuits Syst.II ,vol.49,pp.328–338,May 2002.。