集成电路电感变压器仿真设计

(eq.2)
To calculate the resistance, the system computes the Ohmic Loss P: Where J is the current density and σ is the conductivity.
1 P= 2σ
r r∗ ∫ J • J dv (eq.3)
Q = 2π *
max energy stored energy dissipated per cycle
(eq.6)
W + We W + We = ω * m (eq.7) Q = 2π * m P *T Pl l
Q = ω0 2 Wm 2 We = ω0 Pl Pl
Work Completed to date:
• • • • • Inductor Modeling using EM simulation tool: Maxwell3D, HFSS and ASITIC. Comparison with known examples available in the literature. Comparison and Limitations of Maxwell3D, HFSS, ASITIC. Experimental Layout and measurement techniques. Ferrite loaded Solenoid
September, 2003
Rochester Institute of Technology
7
Quality Factor
• The quality factor describes the frequency selectivity of a resonant circuit or cavity.
11µm Spacing
337µm
Figure 3
Figure 1
Figure 2
•
Setting up the boundaries:
“Displacement current effect” “Eddy current effect” Impedance boundary Insulation boundary turned on for every object including conductors and dielectrics turned on for every conductive object skin depth of the conductor is very small thin sheets of perfectly insulating material between conductors.
Present Work Objectives:
• • • • • Design and modeling of RF micro-Inductors in a limited footprint area. Modeling of ferrite core inductors High Inductance with low loss magnetic cores. High Quality Factor. Optimizing measurements procedures.
2.
2.1 2.2 2.3 2.4 2.5
Results
Air Coil (Comparison with Thesis) HFSS & Maxwell3D (Comparison with Momentum – Agilent) – Paper 1 HFSS (Comparison with SONNET) – Paper 2 ASITIC & HFSS – Paper 3 Comparison and Limitations of Maxwell3D, HFSS, ASITIC.
v
P = R I RMS
2
(eq.4)
R=
r r∗ ∫ J • J dv
v
σI
(eq.5)
2 pຫໍສະໝຸດ Baiduak
September, 2003
Rochester Institute of Technology
5
High Frequency Structure Simulator HFSS
Full wave solver with finite element method and tetrahedral segmentation of the entire space • Excitation Ports: To specify the sources of electromagnetic fields and charges, currents or voltages on objects or surfaces in the design. The Wave Port represents the surface through which a signal enters or exits the geometry. The Lumped Port to define ports located internally and to compute S-parameters directly at the port. • S-parameters, Impedance and Admittance Results: Scattering matrix for information about incident, reflected and transmitted wave and relates to the voltage waves incident to the ports to those reflected from the ports Impedance and Admittance matrix relate the total voltage and current at the port.
September, 2003
Rochester Institute of Technology
6
ASITIC
Computer aided design tool for passive devices over conductive silicon substrates
• • • • • • • • Converts Maxwell’s Equations into a linear system of equations Inductances and Capacitance Matrices are constructed from numerical volume/surface integration of the Green Function. Capacitance and Inductance Matrix are assembled into a large system of equations by the Partial Element Equivalent Circuit formulation System equation is solved for the electrical properties of the system Technology file that describes the substrate and metal layers of the process Input parameters (Number of turns, metal layer, metal width, outer dimension, spacing) entered in order to draw the structure Also used to model transformers, bond pads and capacitors Results: Resistance, Inductance, S-matrix and Equivalent Circuit Model
September, 2003
Rochester Institute of Technology
4
Maxwell3D
• Impedance Matrix Results:
Relationship between AC Voltages and AC currents for multiple conductors in the form of:
2
Wm = average magnetic energy stored We = average electrical energy stored Pl = power loss T = period ω = angular frequency ω0 = resonant frequency
•
At resonance: Wm = We
Z = R + jωL
r r∗ L = ∫ B • H dv
v
(eq.1)
R : internal resistance of the current loop L : self-inductance of the loop ω : the angular frequency Where B is the magnetic flux density H* is the complex conjugate of magnetic flux.
September, 2003
Rochester Institute of Technology
2
Abstract
1.
1.1 1.2 1.3 1.4
Inductor Modeling and comparison of simulation tools
Maxwell3D High Frequency Structure Simulator - HFSS Analysis of Si Inductors and Transformers for ICs - ASITIC Quality Factor
Modeling and Electrical measurements of micro-inductors
Marie Yvanoff Advisor: Dr. Venkataraman
September, 2003
Rochester Institute of Technology
1
Objectives
(eq.8)
Wm =
1 L I 2 (eq.9) 2
Pl = R I
(eq.10)
L Q = ω0 R
(eq.11)
September, 2003
Rochester Institute of Technology
8
Validity of the Mawell3D Modeling
Comparison with Thesis Paper: Chunsheng Yang, “Radio frequency magnetic Thin film Inductor”, Thesis, Alfred University, July 2002
Inductor Considered: Outer dimension = 337 µm *337 µm Width of the metal = 11µm Conductor: material property = Aluminum µr= 1, ε = 1.00021 and σ = 38.106 Siemens/meter
3.
3.1 3.2
Experimental Layouts
Test Structure Options De-embedding
September, 2003
Rochester Institute of Technology
3
Maxwell3D
Full Wave Solver that analyzes electric and magnetic fields in three-dimensional structures • Setting up the model: