- 1、下载文档前请自行甄别文档内容的完整性,平台不提供额外的编辑、内容补充、找答案等附加服务。
- 2、"仅部分预览"的文档,不可在线预览部分如存在完整性等问题,可反馈申请退款(可完整预览的文档不适用该条件!)。
- 3、如文档侵犯您的权益,请联系客服反馈,我们会尽快为您处理(人工客服工作时间:9:00-18:30)。
2.54
25.4 ± 0.6
1. G (L) 2. FO (L) 3. E (L) 4.
VD
5. G (H) 6. FO (H) 7. E (H) 8. Open
2
2001-08-28
Maximum Ratings (Ta = 25°C)
Stage Inverter Control Module
Characteristics
VD
5. G (H) 6. FO (H) 7. E (H) 8. Open
1
2001-08-28
Package Dimensions: 2-123C1B
20.5 0.8 10.5 0.8
20.5 0.8
4 – R6 6
122 1.0 110 0.3 16 13
JAPAN
4 – 5.5
15.3
E2 C2E1
°C/W
¾
¾ 0.136
¾ 0.013 ¾ °C/W
Timing Chart
VGE
10%
90%
90% Irr
Irr
20% Irr
IC
trr
90%
10% td (on)
10% td (off) tf
4
2001-08-28
MG200Q2YS60A
Remark
<Short circuit capability condition>
Reverse recovery time Forward voltage
IGES ICES
VGE = ±20 V, VCE = 0 VGE = +10 V, VCE = 0 VCE = 1200 V, VGE = 0
¾
¾ +3/-4 mA
¾
¾ 100 nA
¾
¾
1.0 mA
VGE (off) VCE = 5 V, IC = 200 mA
Characteristics
Fault output current Over temperature Fault output delay time
Symbol
OC OT td (Fo)
Test Condition
VGE = 15 V ¾
VCC = 600 V, VGE = ±15 V
Min Typ. Max Unit
Symbol
VCES VGES
IC ICP IF IFM PC VD VFO IFO Tj Tstg Tope Visol ¾
Rating
Unit
1200 ±20 200 400 200 400 2000 20 20 20 150 -40~125 -20~100 2500 (AC 1 min) 3 (M5)
6.0 7.0 8.0
V
VCE (sat)
VGE = 15 V, IC = 200 A
Tj = 25°C Tj = 125°C
¾
2.4
2.8
V
¾
¾
3.2
Cies
VCE = 10 V, VGE = 0, f = 1 MHz
¾ 15000 ¾
pF
td (on)
0.10 ¾ 1.00
toff
VCC = 600 V, IC = 200 A
Collector cut-off current Gate-emitter cut-off voltage
Collector-emitter saturation voltage
Input capacitance Turn-on delay time
Switching time Turn-off time Fall time
V V
A
A
W V V mA °C °C °C V N・m
Electrical Characteristics (Tj = 25°C) 1. Inverter Stage
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Gate leakage current
MG200Q2YS60A
TOSHIBA IGBT Module Silicon N Channel IGBT
MG200Q2YS60A (1200V/200A 2in1)
High Power Switching Applications Motor Control Applications
· Integrates a complete half bridge power circuit and fault-signal output circuit in one package. (short circuit and over temperature)
<Gate voltage>
l To use this product, VGE must be provided higher than 14.8 V. In case VGE is less than 14.8 V, fault signal FO may not be output even under error conditions.
240 ¾
¾
A
100 ¾ 125 °C
¾
¾
8
ms
3
2001-08-28
3. Module (Tc = 25°C)
Characteristics Junction to case thermal resistance Case to fin thermal resistance
Switching Time Test Circuit
l Short circuit capability is 6 ms after fault output signal. Please keep following condition to use fault output signal. · VCC <= 750 V · 14.8 V =< VGE <= 17.0 V · RG >= 10 W · Tj <= 125°C
C1
2.54
7 5
8 6
34 12
3 – M6 20 0.8
26 0.8 26 0.8 36.7 0.8 2 – 3.0
10.5 0.8
2.54 15.24
50 0.3 25.4 0.5
8 – 0.64 59 0.5 62 1.0
MG200Q2YS60A
Unit: mm 36 0.8
1.0 0.5
37.5
· The electrodes are isolated from case. · Low thermal resistance · VCE (sat) = 2.4 V (typ.)
Equivalent Circuit
C1
5
6
FO
7
E1/C2
4
OT
1
2
FO
3
E2
Signal terminal
1. G (L) 2. FO (L) 3. E (L) 4.
5
2001-08-28
MG200Q2YS60A
RESTRICTIONS ON PRODUCT USE
000707EAA
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc..
¾
¾ 2.00
VGE = ±15 V, RG = 10 W
ms
tf
(Note 1) ¾
¾ 0.50
trr
¾
¾ 0.50
VF
IF = 200 A
¾
2.4 2.8
V
Note 1: Switching time test circuit & timing chart
2. Control (Tc = 25°C)
Collector-emitter voltage
Gate-emitter voltage
Collector current
DC 1 ms
Forward current
DC 1 ms
Collector power dissipation (Tc = 25°C)
Control voltage (OT)
Fault input voltage
Fault input current
Junction temperature
Storage temperature range
Operation temperatue
Screw torque
MG200Q2YS60A
· The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk.
Symbol Rth (j-c) Rth (c-f)
Test Condition
Inverter IGBT stage Inverter FRD stage With silicon compound
RG
IF
-VGE
IC
L
RG
VCC
MG200Q2YS60A
Min Typ. Max Unit
¾
¾ 0.062
1.0 0.3
1.0 0.3
26
26
20 0.8
119 0.5
1. G (L) 2. FO (L) 3. E (L) 4.
VD
5. G (H) 6. FO (H) 7. E (H) 8. Open
Signal Terminal Layout
7
8
5
6
3
4
1
2
2.54 Weight: 375 g
2.54